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    • 5. 发明授权
    • Communication device, noise removing method, and program
    • 通信设备,噪声去除方法和程序
    • US08243776B2
    • 2012-08-14
    • US12392596
    • 2009-02-25
    • Katsuyuki TanakaHideki Takahashi
    • Katsuyuki TanakaHideki Takahashi
    • H04B1/00
    • H04B1/7097G01S19/13G01S19/21H04B1/1036H04B1/707H04B1/7101H04B2201/70715
    • A communication device according to an embodiment of the present invention includes a communication antenna that receives a transmission signal where a spectrum spread signal subjected to a spectrum spread is modulated; an intermediate frequency converting unit that converts the transmission signal received by the communication antenna into an intermediate frequency signal having a predetermined frequency; an analog to digital converting unit that discretizes the intermediate frequency signal and outputs a discretization signal; a noise removing unit that detects a noise other than a normal thermal noise included in the discretization signal and removes the detected noise from the discretization signal; and a demodulating unit that demodulates the spectrum spread signal, based on the discretization signal that is output from the noise removing unit.
    • 根据本发明实施例的通信设备包括:通信天线,其接收经过频谱扩展的频谱扩展信号被调制的发送信号; 中频变换单元,其将由通信天线接收的发送信号转换为具有预定频率的中频信号; 模数转换单元,其离散中频信号并输出​​离散化信号; 噪声去除单元,其检测离散化信号中包括的正常热噪声以外的噪声,并从所述离散化信号中去除检测到的噪声; 以及解调单元,其基于从噪声去除单元输出的离散化信号来解调频谱扩展信号。
    • 7. 发明授权
    • Insulated gate transistor incorporating diode
    • 并联二极管的绝缘栅晶体管
    • US08008711B2
    • 2011-08-30
    • US11558764
    • 2006-11-10
    • Hideki Takahashi
    • Hideki Takahashi
    • H01L29/78
    • H01L29/7813H01L29/0696H01L29/1095H01L29/407H01L29/66348H01L29/7397H01L29/7803H01L29/7805H01L29/7806
    • A p-type base layer shaped like a well is formed for each of IGBT cells, and a p+-type collector layer and an n+-type cathode layer are formed on a surface opposite to a surface on which the p-type base layer is formed so as to be situated just below the p-type base layer. The p-type base layer of each of the IGBT cells includes a flat region including an emitter region and a bottom surface penetrated by a main trench, and first and second side diffusion regions between which the flat region is interposed. The first side diffusion region is situated just above the n+-type cathode layer and each of the bottom surfaces of the side diffusion regions forms a parabola-shaped smooth curve in longitudinal section. By replacing the p+-type collector layer with the n+-type cathode layer, it is possible to apply features of the above structure to a power MOSFET.
    • 为每个IGBT单元形成像阱状的p型基极层,并且在与p型基极层的表面相对的表面上形成p +型集电极层和n +型阴极层 形成为位于p型基底的正下方。 每个IGBT单元的p型基极层包括包括发射极区域和由主沟槽穿透的底表面的平坦区域,以及插入有平坦区域的第一和第二侧向扩散区域。 第一侧扩散区域位于n +型阴极层的正上方,并且侧向扩散区域的每个底表面在纵向截面中形成抛物线形平滑曲线。 通过用n +型阴极层代替p +型集电极层,可以将上述结构的特征应用于功率MOSFET。