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1. 发明申请

US20080211408A1 Plasma Display Panel and Method for Manufacturing Same 审中-公开
标题翻译：等离子显示面板及其制造方法
公开(公告)号：US20080211408A1
公开(公告)日：2008-09-04
申请号：US11572902
申请日：2005-08-11
申请人： Hiroyuki Yamakita , Masatoshi Kitagawa , Mikihiko Nishitani , Noriyasu Echigo , Tomohiro Okumura , Hiroaki Ishio , Hikaru Nishitani
发明人： Hiroyuki Yamakita , Masatoshi Kitagawa , Mikihiko Nishitani , Noriyasu Echigo , Tomohiro Okumura , Hiroaki Ishio , Hikaru Nishitani
IPC分类号： H01J17/49 , H01J9/02
CPC分类号： H01J11/12 , H01J9/261 , H01J11/48
摘要： An object of the present invention is to provide a plasma display panel and a manufacturing method thereof that can prevent a dielectric layer and a protective layer from being deteriorated and give excellent image display performance, by performing a sealing process effectively. The object can be realized by a plasma display panel including a front panel 10 and a back panel 11 arranged in opposing to each other at a certain gap, the front panel and the back panel being sealed by a sealing layer 17 that is provided on entire peripheral portions of main surfaces of the front panel and the back panel, and the sealing layer is composed of at least one material selected from the group consisting of an organic resin material, an inorganic material, and a metal material (more specifically, a silica material as a main component and an epoxy resin material).
摘要翻译：本发明的目的在于提供一种通过有效地进行密封处理，可以防止电介质层和保护层劣化并且具有优异的图像显示性能的等离子体显示面板及其制造方法。该目的可以通过等离子体显示面板来实现，该等离子体显示面板包括以一定间隙彼此相对布置的前面板10和后面板11，前面板和背面面板被设置在整体上的密封层17密封前面板和后面板的主表面的周边部分和密封层由选自有机树脂材料，无机材料和金属材料（更具体地，二氧化硅）中的至少一种材料组成材料作为主要成分和环氧树脂材料）。

2. 发明申请

US20090167176A1 PLASMA DISPLAY PANEL AND ITS MANUFACTURING METHOD 失效
标题翻译：等离子显示面板及其制造方法
公开(公告)号：US20090167176A1
公开(公告)日：2009-07-02
申请号：US12297200
申请日：2007-04-27
申请人： Yusuke Fukui , Takuji Tsujita , Jun Hashimoto , Hikaru Nishitani , Masaharu Terauchi , Mikihiko Nishitani
发明人： Yusuke Fukui , Takuji Tsujita , Jun Hashimoto , Hikaru Nishitani , Masaharu Terauchi , Mikihiko Nishitani
IPC分类号： H01J17/49 , H01J9/26
CPC分类号： H01J11/40 , H01J9/02 , H01J11/12 , H01J11/38
摘要： A PDP can be driven at low voltage while having a charge retention property in a protection layer, and has favorable image display properties. Additionally, the PDP prevents the occurrence of discharge delay and realizes high-quality image display by performing favorable high-speed driving in a high definition PDP. To achieve this, a surface layer (8) is formed to a film thickness of 1 μm in an oxygen atmosphere having an oxygen partial pressure of 0.025 Pa or more, the surface layer (8) is provided on a face of a dielectric layer (7) on a discharge space side. Furthermore, MgO particles (16) are dispersed on a surface of the surface layer (8). The surface layer (8) has the effects of protecting the dielectric layer (7) from ion bombardment during discharge, reducing the firing voltage, and preventing excessive electron loss. Also, the MgO particles (16) have a high initial electron emission property.
摘要翻译： PDP可以在低电压下驱动，同时在保护层中具有电荷保持性，并且具有良好的图像显示性能。此外，PDP通过在高清晰度PDP中执行有利的高速驱动来防止放电延迟的发生并实现高质量的图像显示。为了实现这一点，在氧分压为0.025Pa以上的氧气氛中，表面层（8）形成为1μm的膜厚，表面层（8）设置在电介质层的表面（ 7）放电空间侧。此外，MgO颗粒（16）分散在表面层（8）的表面上。表面层（8）具有在放电期间保护电介质层（7）免受离子轰击的作用，降低了点火电压，并防止了电子损失过大。此外，MgO粒子（16）具有高的初始电子发射特性。

3. 发明授权

US08018154B2 Plasma display panel and its manufacturing method 失效
标题翻译：等离子显示面板及其制造方法
公开(公告)号：US08018154B2
公开(公告)日：2011-09-13
申请号：US12297200
申请日：2007-04-27
申请人： Yusuke Fukui , Takuji Tsujita , Jun Hashimoto , Hikaru Nishitani , Masaharu Terauchi , Mikihiko Nishitani
发明人： Yusuke Fukui , Takuji Tsujita , Jun Hashimoto , Hikaru Nishitani , Masaharu Terauchi , Mikihiko Nishitani
IPC分类号： H01J17/49
CPC分类号： H01J11/40 , H01J9/02 , H01J11/12 , H01J11/38
摘要： A PDP can be driven at low voltage while having a charge retention property in a protection layer, and has favorable image display properties. Additionally, the PDP prevents the occurrence of discharge delay and realizes high-quality image display by performing favorable high-speed driving in a high definition PDP. To achieve this, a surface layer (8) is formed to a film thickness of 1 μm in an oxygen atmosphere having an oxygen partial pressure of 0.025 Pa or more, the surface layer (8) is provided on a face of a dielectric layer (7) on a discharge space side. Furthermore, MgO particles (16) are dispersed on a surface of the surface layer (8). The surface layer (8) has the effects of protecting the dielectric layer (7) from ion bombardment during discharge, reducing the firing voltage, and preventing excessive electron loss. Also, the MgO particles (16) have a high initial electron emission property.
摘要翻译： PDP可以在低电压下驱动，同时在保护层中具有电荷保持性，并且具有良好的图像显示性能。此外，PDP通过在高清晰度PDP中执行有利的高速驱动来防止放电延迟的发生并实现高质量的图像显示。为了实现这一点，在氧分压为0.025Pa以上的氧气氛中，表面层（8）形成为1μm的膜厚，表面层（8）设置在电介质层的表面（ 7）放电空间侧。此外，MgO颗粒（16）分散在表面层（8）的表面上。表面层（8）具有在放电期间保护电介质层（7）免受离子轰击的作用，降低了点火电压，并防止了电子损失过量。此外，MgO粒子（16）具有高的初始电子发射特性。

4. 发明授权

US06806498B2 Semiconductor thin film, method and apparatus for producing the same, and semiconductor device and method of producing the same 失效
标题翻译：半导体薄膜，其制造方法和装置以及半导体装置及其制造方法
公开(公告)号：US06806498B2
公开(公告)日：2004-10-19
申请号：US10218310
申请日：2002-08-15
申请人： Yoshinao Taketomi , Keizaburo Kuramasu , Masumi Izuchi , Hiroshi Satani , Hiroshi Tsutsu , Hikaru Nishitani , Mikihiko Nishitani , Masashi Goto , Yoshiko Mino
发明人： Yoshinao Taketomi , Keizaburo Kuramasu , Masumi Izuchi , Hiroshi Satani , Hiroshi Tsutsu , Hikaru Nishitani , Mikihiko Nishitani , Masashi Goto , Yoshiko Mino
IPC分类号： H01L31036
CPC分类号： H01L21/02532 , H01L21/02609 , H01L21/02683 , H01L21/02686 , H01L21/02689 , H01L21/02691 , H01L21/2026 , H01L21/316 , H01L29/66757 , H01L29/78675 , H01L29/78696
摘要： In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by increasing a grain size of a silicon thin film. First, an insulation layer having a two-layer structure is formed on a transparent insulated substrate 201. In the insulation layer, a lower insulation layer 202, which is in contact with the transparent insulating substrate 201, is made to have a higher thermal conductivity than an upper insulation layer 203. Thereafter, the upper insulation layer 203is patterned so that a plurality of stripes are formed thereon. Subsequently, an amorphous silicon thin film 204 is formed on the patterned insulation layer, and the insulation layer is irradiated with a laser light scanning in a direction parallel to the stripe pattern on the upper insulation layer 203. Thus, the amorphous silicon thin film 203 is formed into a polycrystalline silicon thin film 210.
摘要翻译：在多晶硅薄膜晶体管中，通过增加硅薄膜的晶粒尺寸来实现具有高场效应迁移率的半导体器件。首先，在透明绝缘基板201上形成具有双层结构的绝缘层。在绝缘层中，与透明绝缘基板201接触的下绝缘层202被制成具有较高的热导率之后，上绝缘层203被图案化，从而在其上形成多个条纹。随后，在图案化绝缘层上形成非晶硅薄膜204，并且在上绝缘层203上沿与平行于条纹图案的方向扫描的激光照射绝缘层。因此，非晶硅薄膜203 形成多晶硅薄膜210。

5. 发明授权

US06528397B1 Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same 失效
标题翻译：半导体薄膜，其制造方法，其制造方法，半导体装置及其制造方法
公开(公告)号：US06528397B1
公开(公告)日：2003-03-04
申请号：US09581768
申请日：2000-06-16
申请人： Yoshinao Taketomi , Keizaburo Kuramasu , Masumi Izuchi , Hiroshi Satani , Hiroshi Tsutsu , Hikaru Nishitani , Mikihiko Nishitani , Masashi Goto , Yoshiko MIno
发明人： Yoshinao Taketomi , Keizaburo Kuramasu , Masumi Izuchi , Hiroshi Satani , Hiroshi Tsutsu , Hikaru Nishitani , Mikihiko Nishitani , Masashi Goto , Yoshiko MIno
IPC分类号： H01L2136
CPC分类号： H01L21/02532 , H01L21/02609 , H01L21/02683 , H01L21/02686 , H01L21/02689 , H01L21/02691 , H01L21/2026 , H01L21/316 , H01L29/66757 , H01L29/78675 , H01L29/78696
摘要： In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by increasing a grain size of a silicon thin film. First, an insulation layer having a two-layer structure is formed on a transparent insulated substrate 201. In the insulation layer, a lower insulation layer 202, which is in contact with the transparent insulating substrate 201, is made to have a higher thermal conductivity than an upper insulation layer 203. Thereafter, the upper insulation layer 203 is patterned so that a plurality of stripes are formed thereon. Subsequently, an amorphous silicon thin film 204 is formed on the patterned insulation layer, and the insulation layer is irradiated with a laser light scanning in a direction parallel to the stripe pattern on the upper insulation layer 203. Thus, the amorphous silicon thin film 203 is formed into a polycrystalline silicon thin film 210.
摘要翻译：在多晶硅薄膜晶体管中，通过增加硅薄膜的晶粒尺寸来实现具有高场效应迁移率的半导体器件。首先，在透明绝缘基板201上形成具有双层结构的绝缘层。在绝缘层中，与透明绝缘基板201接触的下绝缘层202被制成具有较高的热导率之后，上绝缘层203被图案化，从而在其上形成多个条纹。随后，在图案化绝缘层上形成非晶硅薄膜204，并且在上绝缘层203上沿与平行于条纹图案的方向扫描的激光照射绝缘层。因此，非晶硅薄膜203 形成多晶硅薄膜210。

6. 发明申请

US20060152142A1 Plasma display panel 失效
标题翻译：等离子显示面板
公开(公告)号：US20060152142A1
公开(公告)日：2006-07-13
申请号：US10530500
申请日：2003-10-10
申请人： Hikaru Nishitani , Yukihiro Morita , Masatoshi Kitagawa
发明人： Hikaru Nishitani , Yukihiro Morita , Masatoshi Kitagawa
IPC分类号： H01J1/62
CPC分类号： H01J11/40 , H01J11/12 , H01J11/42
摘要： A plasma display panel having a dielectric protection layer (14) including MgO and phosphorlayers (25R, 25G, 25B) for red, green, and blue respectively wherein none of the phosphor layers contain any member of the group consisting of Group IV elements, transition metals, alkali metals, and alkaline earth metals, or wherein all the phosphor layers each contain a specific amount of one or more members of the group consisting of Group IV group elements, transition metals, alkali metals and alkaline earth metals. In such a plasma display panel, changes over the course of time in the impedance of the dielectric protection layer (14) is suppressed, and the phosphor layers are uniform with respect to the directional characteristics of the changes of the impedances, which results in suppression of occurrence of black noise.
摘要翻译：一种等离子体显示面板，其特征在于，具有包含MgO的介电保护层（14）和分别为红色，绿色和蓝色的磷光体（25R，25G，25B），其中，所述荧光体层均不含有由IV 元素，过渡金属，碱金属和碱土金属，或者其中所有荧光体层各自含有特定量的由IV族基团元素，过渡金属，碱金属和碱土金属组成的组中的一种或多种成员。在这种等离子体显示面板中，电介质保护层（14）的阻抗中的时间变化被抑制，并且荧光体层相对于阻抗变化的方向特性是均匀的，这导致抑制发生黑噪声。

7. 发明授权

US07511428B2 Plasma display panel 失效
标题翻译：等离子显示面板
公开(公告)号：US07511428B2
公开(公告)日：2009-03-31
申请号：US10530500
申请日：2003-10-10
申请人： Hikaru Nishitani , Yukihiro Morita , Masatoshi Kitagawa
发明人： Hikaru Nishitani , Yukihiro Morita , Masatoshi Kitagawa
IPC分类号： H01J17/49 , H01J1/62
CPC分类号： H01J11/40 , H01J11/12 , H01J11/42
摘要： A plasma display panel having a dielectric protection layer (14) including MgO and phosphorlayers (25R, 25G, 25B) for red, green, and blue respectively wherein none of the phosphor layers contain any member of the group consisting of Group IV elements, transition metals, alkali metals, and alkaline earth metals, or wherein all the phosphor layers each contain a specific amount of one or more members of the group consisting of Group IV group elements, transition metals, alkali metals and alkaline earth metals. In such a plasma display panel, changes over the course of time in the impedance of the dielectric protection layer (14) is suppressed, and the phosphor layers are uniform with respect to the directional characteristics of the changes of the impedances, which results in suppression of occurrence of black noise.
摘要翻译：一种等离子体显示面板，其具有包括MgO的介电保护层（14）和分别用于红色，绿色和蓝色的磷光体层（25R，25G，25B），其中，所述荧光体层中没有一个含有由IV族元素组成的组的任何成员，金属，碱金属和碱土金属，或者其中所有荧光体层各自含有特定量的由IV族基团元素，过渡金属，碱金属和碱土金属组成的组中的一种或多种成员。在这种等离子体显示面板中，电介质保护层（14）的阻抗中的时间变化被抑制，并且荧光体层相对于阻抗变化的方向特性是均匀的，这导致抑制发生黑噪声。

8. 发明授权

US06906346B2 Semiconductor device, liquid crystal display device, EL display device, method for fabricating semiconductor thin film, and method for manufacturing the semiconductor device 有权
标题翻译：半导体装置，液晶显示装置，EL显示装置，半导体薄膜的制造方法以及半导体装置的制造方法
公开(公告)号：US06906346B2
公开(公告)日：2005-06-14
申请号：US10333793
申请日：2001-07-24
申请人： Hikaru Nishitani , Makoto Yamamoto , Yoshinao Taketomi
发明人： Hikaru Nishitani , Makoto Yamamoto , Yoshinao Taketomi
IPC分类号： G02F1/1368 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786 , H01L27/108 , H01L31/036
CPC分类号： H01L21/02678 , G02F1/1368 , H01L21/2026 , H01L27/12 , H01L27/1281 , H01L29/04 , H01L29/66757 , H01L29/66765 , H01L29/78603 , H01L29/78621 , H01L29/78675 , H01L29/78678
摘要： This invention concerns with a semiconductor device which is characterized in that the device is provided with a thin film transistor 40 having a polycrystalline semiconductor layer 11, the semiconductor layer 11 including a channel area 22, highly doped drain areas 24, 17 positioned on both sides of the channel area 22 and LDD areas 18a, 18b positioned between the channel area 22 and the highly doped drain areas 24, 17 and lower in dopant density than the highly doped drain areas 24, 17, wherein any diameter of the crystal 14 at least partly existing in the LDD area 18b is larger than the size of other crystals 15.
摘要翻译：本发明涉及一种半导体器件，其特征在于该器件设置有具有多晶半导体层11的薄膜晶体管40，半导体层11包括沟道区22，位于两侧的高掺杂漏区24,17 位于通道区域22和高掺杂漏极区域24,17之间的沟道区域22和LDD区域18a，18b以及掺杂剂密度低于高度掺杂的漏极区域24,17，其中晶体14的任何直径至少部分地存在于LDD区域18b中的尺寸大于其它晶体15的尺寸。

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