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1. 发明授权

US08304803B2 Light-emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US08304803B2
公开(公告)日：2012-11-06
申请号：US13283985
申请日：2011-10-28
申请人： Hiroyuki Tanaka , Nobuaki Nagao , Takahiro Hamada , Eiji Fujii
发明人： Hiroyuki Tanaka , Nobuaki Nagao , Takahiro Hamada , Eiji Fujii
IPC分类号： H01L21/00
CPC分类号： H01L33/42 , H01L33/32
摘要： A light-emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film, the n-type single-crystalline ITO transparent film is in contact with the n-type single-crystalline ZnO transparent film, and the p-side electrode is in connected with the n-type single-crystalline ZnO transparent film. The n-type single-crystalline ITO transparent film contains Ga, a molar ratio of Ga/(In+Ga) being not less than 0.08 and not more than 0.5. Thickness of the n-type single-crystalline ITO transparent film is not less than 1.1 nm and not more than 55 nm.
摘要翻译：发光二极管包括堆叠在其中的n型氮化物半导体层，多量子阱，p型氮化物半导体层，窗口电极层，p侧电极和n侧电极订购。窗口电极层包括n型单晶ITO透明膜和n型单晶ZnO透明膜。 p型氮化物半导体层与n型单晶ITO透明膜接触，n型单晶ITO透明膜与n型单晶ZnO透明膜接触，p型侧电极与n型单晶ZnO透明膜连接。 n型单晶ITO透明膜含有Ga，Ga /（In + Ga）的摩尔比不小于0.08且不大于0.5。 n型单晶ITO透明膜的厚度不小于1.1nm且不大于55nm。

2. 发明申请

US20120043524A1 LIGHT-EMITTING DIODE 有权
标题翻译：发光二极管
公开(公告)号：US20120043524A1
公开(公告)日：2012-02-23
申请号：US13284294
申请日：2011-10-28
申请人： Hiroyuki TANAKA , Nobuaki Nagao , Takahiro Hamada , Eiji Fujii
发明人： Hiroyuki TANAKA , Nobuaki Nagao , Takahiro Hamada , Eiji Fujii
IPC分类号： H01L33/06
CPC分类号： H01L33/42 , H01L2933/0083 , H01L2933/0091
摘要： An light emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well layer, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The n-side electrode is electrically connected to the n-type nitride semiconductor layer. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film. The light-emitting diode further comprises a plurality of single-crystalline ZnO rods formed on the n-type single-crystalline ZnO transparent film. The respective lower portions of the single-crystalline ZnO rods have a shape of an inverted taper, which sharpens from the single-crystalline n-type ZnO transparent film toward the n-type nitride semiconductor layer.
摘要翻译：发光二极管包括堆叠在其中的n型氮化物半导体层，多量子阱层，p型氮化物半导体层，窗口电极层，p侧电极和n侧电极订购。 n侧电极与n型氮化物半导体层电连接。窗口电极层包括n型单晶ITO透明膜和n型单晶ZnO透明膜。 p型氮化物半导体层与n型单晶ITO透明膜接触。发光二极管还包括形成在n型单晶ZnO透明膜上的多个单晶ZnO棒。单晶ZnO棒的各自的下部具有从单晶n型ZnO透明膜朝向n型氮化物半导体层而锐化的倒锥形。

3. 发明授权

US08193548B2 Light-emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US08193548B2
公开(公告)日：2012-06-05
申请号：US13284294
申请日：2011-10-28
申请人： Hiroyuki Tanaka , Nobuaki Nagao , Takahiro Hamada , Eiji Fujii
发明人： Hiroyuki Tanaka , Nobuaki Nagao , Takahiro Hamada , Eiji Fujii
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L2933/0083 , H01L2933/0091
摘要： An light emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well layer, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The n-side electrode is electrically connected to the n-type nitride semiconductor layer. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film. The light-emitting diode further comprises a plurality of single-crystalline ZnO rods formed on the n-type single-crystalline ZnO transparent film. The respective lower portions of the single-crystalline ZnO rods have a shape of an inverted taper, which sharpens from the single-crystalline n-type ZnO transparent film toward the n-type nitride semiconductor layer.
摘要翻译：发光二极管包括堆叠在其中的n型氮化物半导体层，多量子阱层，p型氮化物半导体层，窗口电极层，p侧电极和n侧电极订购。 n侧电极与n型氮化物半导体层电连接。窗口电极层包括n型单晶ITO透明膜和n型单晶ZnO透明膜。 p型氮化物半导体层与n型单晶ITO透明膜接触。发光二极管还包括形成在n型单晶ZnO透明膜上的多个单晶ZnO棒。单晶ZnO棒的各自的下部具有从单晶n型ZnO透明膜朝向n型氮化物半导体层而锐化的倒锥形。

4. 发明授权

US08247684B2 Solar cell and method for fabricating the same 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US08247684B2
公开(公告)日：2012-08-21
申请号：US13097860
申请日：2011-04-29
申请人： Nobuaki Nagao , Takahiro Hamada , Akihiro Itoh
发明人： Nobuaki Nagao , Takahiro Hamada , Akihiro Itoh
IPC分类号： H01L31/00 , H01L21/00 , H01L27/14
CPC分类号： H01L31/0392 , C23C16/303 , C30B25/183 , C30B25/186 , C30B29/403 , H01L21/02376 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L31/0693 , H01L31/1852 , Y02E10/544 , Y02P70/521
摘要： A solar cell includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate, an AlN layer formed on the amorphous carbon layer, a n-type nitride semiconductor layer formed on the AlN layer; a light-absorption layer including a nitride semiconductor layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the light-absorption layer; a p-side electrode electrically connected to the p-type nitride semiconductor layer; and an n-side electrode electrically connected to the n-type nitride semiconductor layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate.
摘要翻译：太阳能电池包括石墨基板，形成在石墨基板上的厚度不小于20nm且不大于60nm的非晶碳层，形成在非晶碳层上的AlN层，n型氮化物半导体层形成在AlN层上; 包括形成在所述n型氮化物半导体层上的氮化物半导体层的光吸收层; 形成在所述光吸收层上的p型氮化物半导体层; 电连接到p型氮化物半导体层的p侧电极; 和与n型氮化物半导体层电连接的n侧电极。无定形碳层通过氧化石墨基材的表面而获得。

5. 发明申请

US20110174626A1 SUBSTRATE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：基板及其制造方法
公开(公告)号：US20110174626A1
公开(公告)日：2011-07-21
申请号：US13077382
申请日：2011-03-31
申请人： Takahiro HAMADA , Akihiro Itoh , Nobuaki Nagao
发明人： Takahiro HAMADA , Akihiro Itoh , Nobuaki Nagao
IPC分类号： C25D9/00
CPC分类号： H01L21/02554 , C30B7/12 , C30B29/16 , H01L21/02376 , H01L21/02444 , H01L21/02513 , H01L21/02628
摘要： A single crystal of zinc oxide which is c-axis oriented with use of electrolytic deposition method is formed on an amorphous carbon layer, after the amorphous carbon layer is provided on an inexpensive graphite substrate. The amorphous carbon layer is provided by oxidizing the surface of the graphite substrate.
摘要翻译：在无定形碳层设置在便宜的石墨基板上之后，在无定形碳层上形成利用电解沉积法c轴取向的单晶氧化锌。通过氧化石墨基板的表面来提供无定形碳层。

6. 发明授权

US08420431B2 Solar cell 有权
标题翻译：太阳能电池
公开(公告)号：US08420431B2
公开(公告)日：2013-04-16
申请号：US13460525
申请日：2012-04-30
申请人： Nobuaki Nagao , Takahiro Hamada , Akio Matsushita
发明人： Nobuaki Nagao , Takahiro Hamada , Akio Matsushita
IPC分类号： H01L21/00
CPC分类号： H01L31/1884 , H01L31/035281 , H01L31/0735 , H01L31/1848 , H01L31/1852 , H01L31/1856 , Y02E10/544 , Y02P70/521
摘要： A method of fabricating a solar cell includes steps of: forming an amorphous carbon layer, an AlN layer and a first n-type nitride semiconductor layer on the surface of the graphite substrate, forming a mask layer with a plurality of openings on the first n-type nitride semiconductor layer; forming a plurality of second n-type nitride semiconductor layers on the portions of the first n-type nitride semiconductor layer which are exposed by the plurality of openings; forming a plurality of light absorption layers on the plurality of second n-type nitride semiconductor layers; forming a plurality of p-side nitride semiconductor layers on the plurality of the light absorption layers; forming a p-side electrode; and forming an n-side electrode.
摘要翻译：制造太阳能电池的方法包括以下步骤：在石墨基板的表面上形成非晶碳层，AlN层和第一n型氮化物半导体层，在第一n上形成具有多个开口的掩模层型氮化物半导体层; 在所述第一n型氮化物半导体层的由所述多个开口露出的部分上形成多个第二n型氮化物半导体层; 在所述多个第二n型氮化物半导体层上形成多个光吸收层; 在所述多个所述光吸收层上形成多个p侧氮化物半导体层; 形成p侧电极; 并形成n侧电极。

7. 发明授权

US08268153B2 Substrate and method for fabricating the same 有权
标题翻译：基板及其制造方法
公开(公告)号：US08268153B2
公开(公告)日：2012-09-18
申请号：US13077382
申请日：2011-03-31
申请人： Takahiro Hamada , Akihiro Itoh , Nobuaki Nagao
发明人： Takahiro Hamada , Akihiro Itoh , Nobuaki Nagao
IPC分类号： H01M4/02 , C25D5/54 , C25D3/56
CPC分类号： H01L21/02554 , C30B7/12 , C30B29/16 , H01L21/02376 , H01L21/02444 , H01L21/02513 , H01L21/02628
摘要： A single crystal of zinc oxide which is c-axis oriented with use of electrolytic deposition method is formed on an amorphous carbon layer, after the amorphous carbon layer is provided on an inexpensive graphite substrate. The amorphous carbon layer is provided by oxidizing the surface of the graphite substrate.
摘要翻译：在无定形碳层设置在便宜的石墨基板上之后，在无定形碳层上形成利用电解沉积法c轴取向的单晶氧化锌。通过氧化石墨基板的表面来提供无定形碳层。

8. 发明授权

US08063549B2 Light-emitting diode element and method for fabricating the same 有权
标题翻译：发光二极管元件及其制造方法
公开(公告)号：US08063549B2
公开(公告)日：2011-11-22
申请号：US13036651
申请日：2011-02-28
申请人： Nobuaki Nagao , Takahiro Hamada , Akihiro Itoh
发明人： Nobuaki Nagao , Takahiro Hamada , Akihiro Itoh
IPC分类号： H05B33/00
CPC分类号： H01L33/007 , H01L21/02376 , H01L21/02428 , H01L21/02444 , H01L21/02458 , H01L21/02502 , H01L21/02513 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/32 , H01L33/42
摘要： A substrate for semiconductor device includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate and an AlN layer formed on the amorphous carbon layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate.
摘要翻译：用于半导体器件的衬底包括石墨衬底，形成在石墨衬底上的厚度不小于20nm且不大于60nm的无定形碳层和形成在非晶碳层上的AlN层。无定形碳层通过氧化石墨基材的表面而获得。

9. 发明申请

US20120273038A1 SOLAR CELL AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20120273038A1
公开(公告)日：2012-11-01
申请号：US13547939
申请日：2012-07-12
申请人： Nobuaki Nagao , Takahiro Hamada , Akihiro Itoh
发明人： Nobuaki Nagao , Takahiro Hamada , Akihiro Itoh
IPC分类号： H01L31/0687 , H01L31/18
CPC分类号： H01L31/0392 , C23C16/303 , C30B25/183 , C30B25/186 , C30B29/403 , H01L21/02376 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L31/0693 , H01L31/1852 , Y02E10/544 , Y02P70/521
摘要： A solar cell includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate, an AlN layer formed on the amorphous carbon layer, a n-type nitride semiconductor layer formed on the AlN layer; a light-absorption layer including a nitride semiconductor layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the light-absorption layer; a p-side electrode electrically connected to the p-type nitride semiconductor layer; and an n-side electrode electrically connected to the n-type nitride semiconductor layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate.
摘要翻译：太阳能电池包括石墨基板，形成在石墨基板上的厚度不小于20nm且不大于60nm的非晶碳层，形成在非晶碳层上的AlN层，n型氮化物半导体层形成在AlN层上; 包括形成在所述n型氮化物半导体层上的氮化物半导体层的光吸收层; 形成在所述光吸收层上的p型氮化物半导体层; 电连接到p型氮化物半导体层的p侧电极; 和与n型氮化物半导体层电连接的n侧电极。无定形碳层通过氧化石墨基材的表面而获得。

10. 发明授权

US08663802B2 Substrate and method for fabricating the same 有权
标题翻译：基板及其制造方法
公开(公告)号：US08663802B2
公开(公告)日：2014-03-04
申请号：US13587541
申请日：2012-08-16
申请人： Takahiro Hamada , Akihiro Itoh , Nobuaki Nagao
发明人： Takahiro Hamada , Akihiro Itoh , Nobuaki Nagao
IPC分类号： B32B9/00
CPC分类号： H01L21/02554 , C30B7/12 , C30B29/16 , H01L21/02376 , H01L21/02444 , H01L21/02513 , H01L21/02628
摘要： A single crystal of zinc oxide which is c-axis oriented with use of electrolytic deposition method is formed on an amorphous carbon layer, after the amorphous carbon layer is provided on an inexpensive graphite substrate. The amorphous carbon layer is provided by oxidizing the surface of the graphite substrate.
摘要翻译：在无定形碳层设置在便宜的石墨基板上之后，在无定形碳层上形成利用电解沉积法c轴取向的单晶氧化锌。通过氧化石墨基板的表面来提供无定形碳层。

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