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1. 发明申请

US20130149529A1 METHOD OF PRODUCING COLD-ROLLED STEEL SHEET AS WELL AS COLD-ROLLED STEEL SHEET AND MEMBERS FOR AUTOMOBILE 审中-公开
标题翻译：生产冷轧钢板的方法作为冷轧钢板和汽车零部件
公开(公告)号：US20130149529A1
公开(公告)日：2013-06-13
申请号：US13812438
申请日：2011-08-25
申请人： Hiroyuki Masuoka , Satoru Ando , Shunsuke Yamamoto
发明人： Hiroyuki Masuoka , Satoru Ando , Shunsuke Yamamoto
IPC分类号： C23G1/08
CPC分类号： C23G1/085 , B21B3/02 , C21D8/0205 , C21D8/0226 , C21D8/0236 , C21D8/0273 , C21D9/46 , C22C38/00 , C22C38/001 , C22C38/002 , C22C38/005 , C22C38/02 , C22C38/04 , C22C38/06 , C22C38/12 , C22C38/14 , C22C38/16 , C22C38/22 , C22C38/32 , C22C38/34 , C22C38/38 , C23G1/00 , C23G1/08 , Y10T428/265
摘要： In a method of producing a cold-rolled steel sheet being excellent in not only the phosphate treatability but also the corrosion resistance after coating under severe corrosion environment such as hot salt water immersion test or composite cycle corrosion test, a continuously annealed steel sheet after cold rolling is pickled with a mixture of nitric acid and hydrochloric acid having a nitric acid concentration of more than 100 g/L but not more than 200 g/L and a ratio R (HCl/HNO3) of hydrochloric acid concentration to nitric acid concentration of 0.01-0.25 to remove Si-containing oxide formed on the steel sheet surface by continuous annealing, and a ratio of covering the surface of the steel sheet with an iron-based oxide formed by the pickling is not more than 85% and preferably a maximum thickness of the iron-based oxide existing on the surface of the steel sheet is not more than 200 nm.
摘要翻译：在热盐水浸渍试验或复合循环腐蚀试验等严酷的腐蚀环境下，不仅在磷酸盐处理性上优异，而且在涂装后的耐腐蚀性优异的冷轧钢板的制造方法中，冷连续退火后的钢板用硝酸浓度大于100g / L但不超过200g / L的硝酸和盐酸的混合物酸洗，用盐酸浓度与硝酸浓度的比例R（HCl / HNO 3） 0.01-0.25以通过连续退火除去在钢板表面形成的含Si氧化物，并且通过酸洗形成的铁基氧化物覆盖钢板表面的比例不大于85％，优选最大值存在于钢板表面的铁基氧化物的厚度不大于200nm。

2. 发明申请

US20130149526A1 METHOD OF PRODUCING COLD-ROLLED STEEL SHEET AS WELL AS COLD-ROLLED STEEL SHEET AND MEMBERS FOR AUTOMOBILE 审中-公开
标题翻译：生产冷轧钢板的方法作为冷轧钢板和汽车零部件
公开(公告)号：US20130149526A1
公开(公告)日：2013-06-13
申请号：US13812774
申请日：2011-08-25
申请人： Hiroyuki Masuoka , Satoru Ando , Shunsuke Yamamoto
发明人： Hiroyuki Masuoka , Satoru Ando , Shunsuke Yamamoto
IPC分类号： C23G1/08 , C22C38/00 , B21B45/02
CPC分类号： C23G1/08 , B21B3/02 , B21B45/0269 , C21D8/0236 , C21D8/0278 , C22C38/00 , C22C38/001 , C22C38/002 , C22C38/005 , C22C38/02 , C22C38/04 , C22C38/06 , C22C38/08 , C22C38/12 , C22C38/14 , C22C38/16 , C22C38/22 , C22C38/32 , C22C38/34 , C22C38/38 , C23G1/00 , C23G1/081 , C23G1/085 , C23G1/086 , C23G1/088 , Y10T428/26
摘要： In a method of producing a cold-rolled steel sheet being excellent in not only the phosphate treatability but also the corrosion resistance after coating under severe corrosion environment such as hot salt water immersion test or composite cycle corrosion test, a continuously annealed steel sheet after cold rolling preferably including 0.5-3.0 mass % of Si is pickled to remove a Si-containing oxide layer on a surface layer of the steel sheet and further repickled so that a surface covering ratio of an iron-based oxide on the surface of the steel sheet is not more than 40% and preferably a maximum thickness of the iron-based oxide is not more than 150 nm, as well as a cold-rolled steel sheet produced by this method and a member for automobile using the cold-rolled steel sheet.
摘要翻译：在热盐水浸渍试验或复合循环腐蚀试验等严酷的腐蚀环境下，不仅在磷酸盐处理性上优异，而且在涂装后的耐腐蚀性优异的冷轧钢板的制造方法中，冷连续退火后的钢板将含有0.5-3.0质量％的Si的轧制酸洗以除去钢板的表面层上的含Si氧化物层，并进一步回复，使得钢板表面上的铁基氧化物的表面覆盖率不超过40％，优选铁基氧化物的最大厚度不大于150nm，以及通过该方法制造的冷轧钢板和使用该冷轧钢板的汽车用部件。

3. 发明申请

US20130008396A1 CONTROL APPARATUS FOR VARIABLE OPERATION ANGLE MECHANISM 有权
标题翻译：可变操作角度机构的控制装置
公开(公告)号：US20130008396A1
公开(公告)日：2013-01-10
申请号：US13497379
申请日：2011-03-11
申请人： Takashi Nakagawa , Shunsuke Yamamoto , Shunsuke Habara
发明人： Takashi Nakagawa , Shunsuke Yamamoto , Shunsuke Habara
IPC分类号： F01L1/00
CPC分类号： F02D41/0002 , F02D13/0207 , F02D41/042 , F02D41/065 , F02D2041/001 , Y02T10/18 , Y02T10/42
摘要： An electronic control unit that controls a variable operation angle mechanism that varies an operation angle of an intake valve reduces an operation angle of the intake valve to a normal startup operation angle after first maintaining the operation angle of the intake valve at a high temperature restart operation angle that is larger than the normal startup operation angle for a predetermined period of time after an engine is stopped.
摘要翻译：控制改变进气门的运行角度的可变运转角度机构的电子控制单元，在将进气门的运转角度维持在高温重启运转之后，将进气门的运转角度降低到正常起动运转角度发动机停止后的预定时间段内的大于正常启动操作角度的角度。

4. 发明授权

US08570549B2 Image recording apparatus in which a recorded content or output for which the confidentiality is required can be prevented from being visible to another user 有权
标题翻译：可以防止其中需要保密性的记录内容或输出对另一用户可见的图像记录装置
公开(公告)号：US08570549B2
公开(公告)日：2013-10-29
申请号：US13050319
申请日：2011-03-17
申请人： Shunsuke Yamamoto
发明人： Shunsuke Yamamoto
IPC分类号： G06K15/00 , H04N1/60 , B41C1/00 , G03G15/02 , G03G15/00 , G03G21/00
CPC分类号： B41J13/0036 , B65H31/24 , B65H2220/04 , B65H2511/412 , B65H2511/51 , B65H2511/515 , B65H2513/42 , G06F21/608 , B65H2220/01
摘要： An image recording apparatus, including: a recording device; discharge trays; a discharge mechanism; detectors; an input device through which is inputted authentication information relating to image data; and a controller including: an image-data reception portion; an authentication-information confirming portion to make a confirmation as to whether the authentication information contains specific information; a confirmation-necessity judging portion to judge whether the confirmation by the confirming portion with respect to the image data is necessary; a selecting portion to select one discharge tray on which the recording medium is not placed, wherein, where the judging portion judges that the confirmation is necessary, the controller permits selection of the one discharge tray, controls the recording device to record the image based on the image data after the confirmation that the authentication information contains the specific information, and controls the discharge mechanism to discharge, to the selected one discharge tray, the image-recorded recording medium.
摘要翻译：一种图像记录装置，包括：记录装置; 卸料盘排放机构; 探测器输入设备，通过该输入设备输入与图像数据有关的认证信息; 以及控制器，包括：图像数据接收部分; 验证信息确认部分，用于确认认证信息是否包含特定信息; 确定必要性判断部分，用于判断是否需要由确认部分对图像数据的确认; 选择部分，用于选择其上没有放置记录介质的一个排出托盘，其中，在判断部分判断需要确认的情况下，控制器允许选择一个排出托盘，控制记录装置基于确认认证信息包含特定信息之后的图像数据，并且控制排出机构排出到所选择的一个排出托盘，图像记录记录介质。

5. 发明申请

US20090050915A1 Group III-V nitride semiconductor substrate and method for producing same 审中-公开
标题翻译： III-V族氮化物半导体衬底及其制造方法
公开(公告)号：US20090050915A1
公开(公告)日：2009-02-26
申请号：US12213391
申请日：2008-06-18
申请人： Shunsuke Yamamoto
发明人： Shunsuke Yamamoto
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： C30B29/403 , C30B25/02 , C30B25/18 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/0262
摘要： A group III-V nitride semiconductor substrate includes a first region of group III-V nitride semiconductor crystal grown on a facet on a heterosubstrate, and a second region of the group III-V nitride semiconductor crystal grown on a plane with a predetermined plane orientation on the heterosubstrate. The first region has an area ratio of not more than 10% to the second region in a plane of the substrate. A method for producing a group III-V nitride semiconductor substrate includes a first crystal growth step of supplying a source gas of a group III-V nitride semiconductor onto a heterosubstrate at a first partial pressure to grow the group III-V nitride semiconductor on a plane with a predetermined plane orientation and a facet on the heterosubstrate, and a second crystal growth step of supplying onto the heterosubstrate the source gas at a second partial pressure higher than the first partial pressure to grow the semiconductor on the plane with the predetermined plane orientation and the facet after the first crystal growth step is conduced for a predetermined time period so as to suppress a crystal growth of the semiconductor on the facet.
摘要翻译： III-V族氮化物半导体衬底包括在异质衬底上的小面上生长的III-V族氮化物半导体晶体的第一区域和在具有预定平面取向的平面上生长的III-V族氮化物半导体晶体的第二区域在异基质上。第一区域与衬底的平面中的第二区域的面积比不大于10％。一种III-V族氮化物半导体衬底的制造方法包括：将第III-V族氮化物半导体的源极气体以第1分压供给到异质衬底上的第1晶体生长工序，具有预定平面取向的平面和在异质基板上的刻面的第二晶体生长步骤和以高于第一分压的第二分压向异质底物供应源极气体以在预定平面取向的平面上生长半导体的第二晶体生长步骤并且在第一晶体生长步骤之后的刻面被导通预定时间段，以便抑制半导体在该刻面上的晶体生长。

6. 发明授权

US07314518B2 Furnace for growing compound semiconductor single crystal and method of growing the same by using the furnace 失效
标题翻译：用于生长化合物半导体单晶的炉子及其使用炉子生长的方法
公开(公告)号：US07314518B2
公开(公告)日：2008-01-01
申请号：US11033986
申请日：2005-01-13
申请人： Michinori Wachi , Hiroshi Sasabe , Shunsuke Yamamoto
发明人： Michinori Wachi , Hiroshi Sasabe , Shunsuke Yamamoto
IPC分类号： C30B11/04
CPC分类号： C30B35/002 , C30B27/00 , C30B29/42 , Y10T117/1092
摘要： A crystal growth furnace for a compound semiconductor single crystal has: a small diameter section for placing a seed crystal therein; an increasing diameter section that has diameters to increase from the small diameter section to upward; and a constant diameter section that extends from the increasing diameter section to upward. The increasing diameter section has an angle of 120 degrees or more and less than 160 degrees between inner walls opposed to each other.
摘要翻译：用于化合物半导体单晶的晶体生长炉具有：用于将晶种放置在其中的小直径部分; 直径增大的部分，其直径从小直径部分向上增加; 以及从增加直径部向上延伸的恒定直径部。增加的直径部分在彼此相对的内壁之间具有120度以上且小于160度的角度。

7. 发明授权

US09695717B2 Control device for internal combustion engine 有权
公开(公告)号：US09695717B2
公开(公告)日：2017-07-04
申请号：US14903011
申请日：2014-05-27
申请人： Shunsuke Yamamoto , Toyokazu Nakashima
发明人： Shunsuke Yamamoto , Toyokazu Nakashima
IPC分类号： F01L1/344 , F02D41/20 , F02D41/24 , F02D13/02 , F01L1/053 , F02D41/00 , F02D41/14
CPC分类号： F01L1/3442 , F01L2001/0537 , F01L2001/3443 , F01L2001/34463 , F01L2001/34483 , F01L2250/02 , F01L2250/04 , F01L2800/00 , F02D13/02 , F02D13/0215 , F02D13/0234 , F02D13/0249 , F02D41/20 , F02D41/2451 , F02D2041/001 , F02D2041/1409 , F02D2041/2027
摘要： A control device for an engine includes a variable valve timing mechanism. The control device performs learning a holding control amount of a hydraulic valve when actual valve timing is held at a fixed timing in each of spring and non-spring regions, and an updating. The updating includes updating the control amount for the non-spring region whenever the control amount for the spring region learned drops below the control amount for the non-spring region to satisfy a relationship with the control amount for the non-spring region being less than or equal to the control amount for the spring region, and/or updating the control amount for the spring region whenever the control amount for the non-spring region learned exceeds the control amount for the spring region to satisfy a relationship with the control amount for the spring region being greater than or equal to the control amount for the non-spring region.

8. 发明申请

US20130239918A1 CONTROL APPARATUS FOR VARIABLE VALVE ACTUATION SYSTEM AND CONTROL METHOD FOR VARIABLE VALVE ACTUATION SYSTEM 有权
标题翻译：可变阀门执行系统控制装置及可变阀门执行系统控制方法
公开(公告)号：US20130239918A1
公开(公告)日：2013-09-19
申请号：US13988628
申请日：2011-11-22
申请人： Takashi Nakagawa , Shunsuke Yamamoto
发明人： Takashi Nakagawa , Shunsuke Yamamoto
IPC分类号： F01L1/34
CPC分类号： F01L1/34 , F01L2001/186 , F01L2800/00 , F01L2800/11 , F01L2820/032 , F02D41/0002 , F02D41/221 , F02D41/2438 , F02D41/2464 , F02D2041/001 , Y02T10/42
摘要： In a variable valve actuation system capable of changing the angle of action of intake valves by using an actuator whose movement range is between a high end and a low end at which the movement of the actuator is mechanically stopped, it is determined that a fixation is present on condition that the actual amount of movement of the actuator in response to a command A for movement toward the low end that is issued when the present movement position of the actuator is unknown is not more than a prescribed movement criterion value a and that the actual amount of movement in response to a command B output subsequently to the command A in order to cause the actuator to operate in a direction opposite to the direction of the movement in response to the command B is not more than a prescribed movement criterion value b.
摘要翻译：在可变气门致动系统中，能够通过使用致动器来改变进气门的作用角度，该致动器的运动范围在致动器的运动被机械地停止的高端和低端之间，确定固定是在执行器的当前移动位置未知时响应于朝向低端移动的命令A的致动器的实际移动量不大于规定的移动标准值a，并且响应于随着命令A输出的命令B输出的响应于命令B使致动器沿与移动方向相反的方向操作的实际移动量不大于规定的移动标准值b 。

9. 发明授权

US08333449B2 Droplet ejection device that adjusts ink ejection amount 有权
标题翻译：调节喷墨量的液滴喷射装置
公开(公告)号：US08333449B2
公开(公告)日：2012-12-18
申请号：US12979891
申请日：2010-12-28
申请人： Shunsuke Yamamoto
发明人： Shunsuke Yamamoto
IPC分类号： B41J29/38
CPC分类号： B41J2/17566 , B41J2/04508 , B41J2/04578 , B41J2/0458 , B41J2/04581 , B41J2/04588 , B41J2/04595 , B41J2/2114 , B41J2002/14225 , B41J2002/14459 , B41J2202/20
摘要： A droplet ejection device includes a first determining unit that determines a first amount of liquid on an image pixel basis based on both a second amount and an ejection pattern both obtained from image data, actuator that ejects the first amount of the liquid, a second determining unit that determines a third amount of treating agent on an image pixel basis based on a difference between the first and second amounts, such that a density of the liquid corresponding to a combination of the first amount of the liquid and the third amount of the treating agent comes closer to a density of the liquid corresponding to the second amount of the liquid when there is a difference between the first and second amounts, and a treating-agent application member that applies the third amount of the treating agent to a recording medium.
摘要翻译：液滴喷射装置包括第一确定单元，该第一确定单元基于从图像数据获得的第二量和排出图案确定基于图像像素的第一量的液体，排出第一量的液体的致动器，第二确定单元单位，其基于第一和第二量之间的差，基于图像像素确定第三量的处理剂，使得与第一量的液体的组合相对应的液体的浓度和第三量的处理当第一和第二量之间存在差异时，试剂接近对应于第二量液体的液体的密度，以及将第三量的处理剂施加到记录介质的处理剂施加构件。

10. 发明授权

US08274087B2 Nitride semiconductor substrate and manufacturing method of the same 有权
标题翻译：氮化物半导体衬底及其制造方法相同
公开(公告)号：US08274087B2
公开(公告)日：2012-09-25
申请号：US12619972
申请日：2009-11-17
申请人： Shunsuke Yamamoto
发明人： Shunsuke Yamamoto
IPC分类号： H01L29/20
CPC分类号： H01L21/0262 , C30B25/02 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , Y10T83/0405
摘要： To improve an adhesion to a substrate holder, and improve a device production yield by uniformizing a temperature distribution in a surface of a substrate and uniformizing characteristics such as a film thickness. When a concave warpage is set to be negative on a substrate front side, and a convex warpage is set to be positive on the substrate front side, then a line segment is drawn from one end of a substrate rear surface to the other end of the substrate rear surface, passing through a substrate center line, and a substrate is sliced by this line segment in a substrate thickness direction, a maximum value of shortest values of a distance from an arbitrary point on the drawn line segment to a rear side outline in a sliced surface, is defined as warpage H in a diameter direction, and when the warpage H in the diameter direction is obtained in a substrate peripheral direction, with its maximum value set to be Hmax, and its minimum value set to be Hmin, the warpage H in the diameter direction is defined to satisfy Hmax−Hmin≦30 μm.
摘要翻译：为了提高对基板保持器的粘合性，通过使基板的表面的温度分布均匀化，使膜厚等均匀化等来提高元件的制造成品率。在基板正面侧的凹曲面设定为负的情况下，在基板正面侧将凸出的翘曲设定为正的情况下，将线段从基板背面的一端拉到另一端基板后表面，通过基板中心线，并且基板在基板厚度方向上被该线段切片，从绘制线段上的任意点到后侧轮廓的距离的最短值的最大值切片面被定义为直径方向的翘曲H，当在基板圆周方向上获得直径方向上的翘曲H，其最大值设定为Hmax，其最小值设定为Hmin时，将直径方向的翘曲H定义为满足Hmax-Hmin＆nlE;30μm。

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