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1. 发明申请

US20160072045A1 MAGNETIC MEMORY AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：磁记忆及其制造方法
公开(公告)号：US20160072045A1
公开(公告)日：2016-03-10
申请号：US14593611
申请日：2015-01-09
申请人： Hiroyuki KANAYA , Hisanori AIKAWA , Keisuke NAKATSUKA
发明人： Hiroyuki KANAYA , Hisanori AIKAWA , Keisuke NAKATSUKA
IPC分类号： H01L43/08 , H01L43/12 , H01L27/22
CPC分类号： H01L43/08 , H01L27/228 , H01L43/12
摘要： According to one embodiment, a magnetic memory is disclosed. The magnetic memory comprises an interconnect layer, a first conductive layer on the interconnect layer, the first conductive layer including a metal, an oxide layer on the first conductive layer, a second conductive layer on the oxide layer, a magnetoresistive element on the second conductive layer, the magnetoresistive element including a first magnetic layer, a second magnetic layer and a nonmagnetic layer between the first and second magnetic layers, and a deposited material on a sidewall of the oxide layer, the deposited material including the metal.
摘要翻译：根据一个实施例，公开了一种磁存储器。磁存储器包括互连层，互连层上的第一导电层，第一导电层包括金属，第一导电层上的氧化物层，氧化物层上的第二导电层，第二导电层上的磁阻元件层，磁阻元件包括在第一和第二磁性层之间的第一磁性层，第二磁性层和非磁性层，以及在氧化物层的侧壁上的沉积材料，沉积材料包括金属。

2. 发明申请

US20100052023A1 SEMICONDUCTOR DEVICE HAVING A FERROELECTRIC CAPACITOR AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：具有电磁电容器的半导体器件及其制造方法
公开(公告)号：US20100052023A1
公开(公告)日：2010-03-04
申请号：US12553763
申请日：2009-09-03
申请人： Hiroyuki KANAYA
发明人： Hiroyuki KANAYA
IPC分类号： H01L27/108 , H01L21/02
CPC分类号： H01L28/75 , H01L27/11507 , H01L28/56 , H01L28/57 , H01L28/65
摘要： A semiconductor device includes a semiconductor substrate, a plurality of transistors connected in series and including a transistor having first and second diffusion regions arranged in the semiconductor substrate. The device also includes an insulating film columnar body arranged above the semiconductor substrate, and having a side which is inclined to a top surface of the substrate by an inclination angle greater than 0 degrees and less than 90 degrees. The device includes a memory cell including a first electrode arranged on the side of the insulating film columnar body and connected to the first diffusion region via a first contact plug, a ferroelectric film arranged on the first electrode, and a second electrode arranged on the ferroelectric film, and connected to the second diffusion region via a second contact plug.
摘要翻译：半导体器件包括半导体衬底，串联连接的多个晶体管，并且包括具有布置在半导体衬底中的第一和第二扩散区的晶体管。该器件还包括布置在半导体衬底之上的绝缘膜柱状体，并且具有倾斜角度大于0度且小于90度的侧面，该侧面与衬底的顶表面倾斜。该装置包括存储单元，该存储单元包括布置在绝缘膜柱状体一侧的第一电极，并经由第一接触插塞连接到第一扩散区，布置在第一电极上的铁电膜和布置在铁电体上的第二电极并且经由第二接触插塞连接到第二扩散区域。

3. 发明申请

US20080121957A1 NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING NON-VOLATILE MEMORY DEVICE 审中-公开
标题翻译：非易失性存储器件的制造方法和非易失性存储器件的制造方法
公开(公告)号：US20080121957A1
公开(公告)日：2008-05-29
申请号：US11943212
申请日：2007-11-20
申请人： Hiroyuki KANAYA
发明人： Hiroyuki KANAYA
IPC分类号： H01L27/105 , H01L21/8239
CPC分类号： H01L28/57 , H01L28/56 , H01L28/65 , H01L28/75
摘要： A non-volatile memory device including a ferroelectric capacitor is disclosed. A method of manufacturing a non-volatile memory device including a ferroelectric capacitor is also disclosed. A first electrode is formed on an insulating film provided on a semiconductor substrate. A first ferroelectric film is formed on the first electrode. The first ferroelectric film has a convexo-concave surface portion. A second ferroelectric film is formed on the first ferroelectric film so as to bury the convexo-concave surface portion. The second ferroelectric film has a surface flatter than that of the first ferroelectric film. A second electrode is formed on the second ferroelectric film. A protective film is formed at least on a portion of an upper surface of the second electrode. The protective film serves as a barrier against hydrogen.
摘要翻译：公开了一种包括铁电电容器的非易失性存储器件。还公开了一种制造包括铁电电容器的非易失性存储器件的方法。第一电极形成在设置在半导体衬底上的绝缘膜上。在第一电极上形成第一铁电体膜。第一铁电体膜具有凹凸表面部分。在第一铁电体膜上形成第二铁电体膜，以埋入凹凸表面部分。第二铁电体膜具有比第一铁电体膜更平坦的表面。第二电极形成在第二铁电体膜上。至少在第二电极的上表面的一部分上形成保护膜。保护膜用作阻止氢的屏障。

4. 发明申请

US20100123175A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20100123175A1
公开(公告)日：2010-05-20
申请号：US12557422
申请日：2009-09-10
申请人： Hiroyuki KANAYA
发明人： Hiroyuki KANAYA
IPC分类号： H01L27/108
CPC分类号： H01L27/11507 , H01L28/55
摘要： According to an aspect of the present invention, there is provided a semiconductor device, including: a semiconductor substrate; a transistor that is formed on the semiconductor substrate; an interlayer insulating film that is formed on the semiconductor substrate so as to cover the transistor and that has a through hole formed thereinside so as to reach the transistor; a plug lower-electrode that is formed in the through hole and that is connected to the transistor; a ferroelectric film that is formed on the plug lower-electrode; and an upper-electrode that is formed on the ferroelectric film.
摘要翻译：根据本发明的一个方面，提供一种半导体器件，包括：半导体衬底; 形成在半导体衬底上的晶体管; 形成在所述半导体衬底上以覆盖所述晶体管并且具有形成在其内的通孔以便到达所述晶体管的层间绝缘膜; 形成在所述通孔中并连接到所述晶体管的插头下电极; 形成在插塞下电极上的铁电体膜; 以及形成在强电介质膜上的上电极。

5. 发明申请

US20080217669A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：用于制造半导体存储器件的半导体存储器件和方法
公开(公告)号：US20080217669A1
公开(公告)日：2008-09-11
申请号：US12038226
申请日：2008-02-27
申请人： Hiroyuki KANAYA
发明人： Hiroyuki KANAYA
IPC分类号： H01L27/105 , H01L21/8239
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55
摘要： According to an aspect of the present invention, there is provided a semiconductor memory device comprising, a first transistor and a second transistor formed on a semiconductor substrate, a memory capacitor formed above the first transistor, the memory capacitor being connected to the first transistor, a dummy memory capacitor formed above the second transistor, a wiring layer formed above the memory capacitor and the dummy memory capacitor, the wiring layer being connected to the first transistor and the memory capacitor, a first plug connecting between the second transistor and the dummy memory capacitor, and a second plug connecting between the dummy memory capacitor and the wiring layer.
摘要翻译：根据本发明的一个方面，提供了一种半导体存储器件，包括形成在半导体衬底上的第一晶体管和第二晶体管，形成在第一晶体管上方的存储电容器，存储电容器连接到第一晶体管，形成在所述第二晶体管上方的虚拟存储电容器，形成在所述存储电容器和所述虚拟存储电容器上方的布线层，所述布线层连接到所述第一晶体管和所述存储电容器，第一插头，连接在所述第二晶体管和所述虚拟存储器之间电容器和连接在虚拟存储电容器和布线层之间的第二插头。

6. 发明申请

US20150263267A1 MAGNETIC MEMORY AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：磁记忆及其制造方法
公开(公告)号：US20150263267A1
公开(公告)日：2015-09-17
申请号：US14481541
申请日：2014-09-09
申请人： Hiroyuki KANAYA
发明人： Hiroyuki KANAYA
IPC分类号： H01L43/08 , H01L43/12 , H01L43/02
CPC分类号： H01L43/08 , H01L21/3213 , H01L21/76895 , H01L27/222 , H01L43/02 , H01L43/12
摘要： One embodiment discloses a magnetic memory. The magnetic memory includes a substrate, an electrode provided on the substrate, a member provided on the electrode and having an amorphous structure, and a magnetoresistive element provided on the member. The magnetoresistive element is located within a closed curve defining a contour of an upper surface of the member.
摘要翻译：一个实施例公开了磁存储器。磁存储器包括衬底，设置在衬底上的电极，设置在电极上并具有非晶结构的构件和设置在构件上的磁阻元件。磁阻元件位于限定构件的上表面的轮廓的闭合曲线内。

7. 发明申请

US20110062503A1 SEMICONDUCTOR MEMORY DEVICE 审中-公开
标题翻译：半导体存储器件
公开(公告)号：US20110062503A1
公开(公告)日：2011-03-17
申请号：US12720502
申请日：2010-03-09
申请人： Atsushi KONNO , Hiroyuki KANAYA
发明人： Atsushi KONNO , Hiroyuki KANAYA
IPC分类号： H01L27/108
CPC分类号： H01L27/11507 , H01L21/76829
摘要： A semiconductor memory device includes a plurality of transistors on a semiconductor substrate; a first interlayer dielectric film on the transistors; a plurality of ferroelectric capacitors on the first interlayer dielectric film; a first hydrogen barrier film covering an upper surface and a side surface of each of the ferroelectric capacitors; a second interlayer dielectric film above the ferroelectric capacitors, the second interlayer dielectric film being buried to have a void or hole between two adjacent ferroelectric capacitors out of the ferroelectric capacitors; a cover dielectric film covering the second interlayer dielectric film to close an opening of the void or hole; and a second hydrogen barrier film covering the cover dielectric film.
摘要翻译：半导体存储器件包括半导体衬底上的多个晶体管; 晶体管上的第一层间绝缘膜; 第一层间电介质膜上的多个铁电电容器; 覆盖每个强电介质电容器的上表面和侧表面的第一氢阻挡膜; 在所述铁电电容器上方的第二层间电介质膜，所述第二层间绝缘膜被埋入以在所述铁电电容器中的两个相邻的强电介质电容器之间具有空隙或孔; 覆盖所述第二层间电介质膜以封闭所述空隙或孔的开口的覆盖电介质膜; 以及覆盖覆盖电介质膜的第二氢阻挡膜。

8. 发明申请

US20090134440A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090134440A1
公开(公告)日：2009-05-28
申请号：US12361553
申请日：2009-01-29
申请人： Hiroyuki KANAYA
发明人： Hiroyuki KANAYA
IPC分类号： H01L29/51 , G11C15/02
CPC分类号： H01L28/55 , H01L27/11502 , H01L27/11507
摘要： A semiconductor device comprising a substrate and a ferroelectric capacitor formed on the substrate. The ferroelectric capacitor includes a lower electrode, an upper electrode and a ferroelectric film interposed between the lower and upper electrodes. The ferroelectric capacitor having sidewalls receded from sidewalls of the upper electrode.
摘要翻译：一种半导体器件，包括形成在衬底上的衬底和铁电电容器。铁电电容器包括下电极，上电极和介于下电极和上电极之间的铁电体膜。铁电电容器具有从上电极的侧壁退出的侧壁。

9. 发明申请

US20150255706A1 MAGNETIC MEMORY AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：磁记忆及其制造方法
公开(公告)号：US20150255706A1
公开(公告)日：2015-09-10
申请号：US14322631
申请日：2014-07-02
申请人： Masayoshi IWAYAMA , Hiroyuki KANAYA
发明人： Masayoshi IWAYAMA , Hiroyuki KANAYA
IPC分类号： H01L43/02 , H01L43/12
CPC分类号： H01L43/02 , H01L43/08 , H01L43/12
摘要： According to one embodiment, a magnetic memory is disclosed. The magnetic memory includes an underlying structure having conductivity provided on the substrate and including a first layer with a polycrystalline structure and a second layer with an amorphous structure, and a magnetoresistive element provide on the underlying layer. The magnetoresistive element includes a first magnetic layer provided on the underlying layer, a non-magnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the non-magnetic layer.
摘要翻译：根据一个实施例，公开了一种磁存储器。磁存储器包括具有提供在衬底上的导电性的底层结构，并且包括具有多晶结构的第一层和具有非晶结构的第二层，并且磁阻元件提供在下层上。磁阻元件包括设置在下层上的第一磁性层，设置在第一磁性层上的非磁性层和设置在非磁性层上的第二磁性层。

10. 发明申请

US20140284734A1 MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US20140284734A1
公开(公告)日：2014-09-25
申请号：US13965149
申请日：2013-08-12
申请人： Hiroyuki KANAYA , Kuniaki SUGIURA
发明人： Hiroyuki KANAYA , Kuniaki SUGIURA
IPC分类号： H01L43/02
CPC分类号： H01L43/02 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetic random access memory includes a magnetoresistive element, a contact arranged under the magnetoresistive element and connected to the magnetoresistive element, and an insulating film continuously formed from a periphery of the contact to a side surface of the magnetoresistive element and including a protective portion covering the side surface of the magnetoresistive element.
摘要翻译：根据一个实施例，磁性随机存取存储器包括磁阻元件，布置在磁阻元件下方并连接到磁阻元件的触点，以及从触点的周边连续形成到磁阻元件的侧表面的绝缘膜，以及包括覆盖磁阻元件的侧表面的保护部分。

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