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    • 9. 发明授权
    • Method of plasma processing
    • 等离子体处理方法
    • US07183219B1
    • 2007-02-27
    • US09869277
    • 1999-12-21
    • Kiichi HamaHiroyuki IshiharaAkinori Kitamura
    • Kiichi HamaHiroyuki IshiharaAkinori Kitamura
    • H01L21/302H01L21/3065
    • H01J37/3299H01L21/31116
    • An SiO2 film layer formed at a wafer placed inside a process chamber of an etching device is etched by generating plasma from a process gas containing fluorocarbon which has been introduced into the process chamber. The contents of an etchant and the byproducts are measured through infrared laser absorption analysis. The individual contents thus measured are compared with the contents of the etchant and the byproducts in the plasma corresponding to the increase in the aspect ratio of a contact hole set in advance. The quantity of O2 added into the process gas is adjusted to match the measured contents with the predetermined contents. The quantity of O2 added into the process gas is continuously increased as the aspect ratio becomes higher. As a result, a contact hole is formed at the SiO2 film layer without damaging the photoresist film layer or inducing an etch stop.
    • 在放置在蚀刻装置的处理室内的晶片上形成的SiO 2膜层通过从已经被引入到处理室中的含有碳氟化合物的工艺气体产生等离子体来蚀刻。 通过红外激光吸收分析测量蚀刻剂和副产物的含量。 将如此测量的各个内容与预先设定的接触孔的纵横比的增加相对应的等离子体中的蚀刻剂和副产物的含量进行比较。 调整添加到处理气体中的O 2 2的量以使测量的内容与预定内容相匹配。 加入到工艺气体中的O 2 2的量随着纵横比变高而不断增加。 结果,在SiO 2膜层处形成接触孔,而不损害光致抗蚀剂膜层或引起蚀刻停止。