专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5054031A Semiconductor laser device 失效
公开(公告)号：US5054031A
公开(公告)日：1991-10-01
申请号：US455574
申请日：1989-12-22
申请人： Hiroyuki Hosoba , Mitsuhiro Matsumoto , Sadayoshi Matsui , Taiji Morimoto
发明人： Hiroyuki Hosoba , Mitsuhiro Matsumoto , Sadayoshi Matsui , Taiji Morimoto
IPC分类号： H01S5/00 , H01S5/042 , H01S5/10 , H01S5/16 , H01S5/223 , H01S5/24
CPC分类号： H01S5/10 , H01S5/16 , H01S5/2234 , H01S5/2235 , H01S5/24
摘要： A semiconductor laser device is disclosed which comprises a semiconductor substrate having a ridge portion, the width of the ridge portion being smaller in the vicinity of the facets than in the inside of the device; a current blocking layer formed on the substrate including the ridge portion; at least one striped groove formed on the center of the ridge portion through the current blocking layer; and a multi-layered structure disposed on the current blocking layer, the multi-layered structure successively having a first current blocking layer, an active layer for laser oscillation, and a second current blocking layer; wherein at least two side grooves are symmetrically formed on both sides of the center region of the ridge portion with the same width as that of the regions thereof near the facets. Also, disclosed is a method for producing the semiconductor laser device.

2. 发明授权

US5206185A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5206185A
公开(公告)日：1993-04-27
申请号：US707449
申请日：1991-05-30
申请人： Hiroyuki Hosoba , Mitsuhiro Matsumoto , Sadayoshi Matsui , Taiji Morimoto
发明人： Hiroyuki Hosoba , Mitsuhiro Matsumoto , Sadayoshi Matsui , Taiji Morimoto
IPC分类号： H01S5/10 , H01S5/16 , H01S5/223 , H01S5/24
CPC分类号： H01S5/10 , H01S5/16 , H01S5/2234 , H01S5/2235 , H01S5/24
摘要： A semiconductor laser device is disclosed which comprises a semiconductor substrate having a ridge portion, the width of the ridge portion being smaller in the vicinity of the facets than in the inside of the device; a current blocking layer formed on the substrate including the ridge portion; at least one striped groove formed on the center of the ridge portion through the current blocking layer; and a multi-layered structure disposed on the current blocking layer, the multi-layered structure successively having a first current blocking layer, an active layer for laser oscillation, and a second current blocking layer; wherein at least two side grooves are symmetrically formed on both sides of the center region of the ridge portion with the same width as that of the regions thereof near the facets. Also, disclosed is a method for producing the semiconductor laser device.
摘要翻译：公开了一种半导体激光器件，其包括具有脊部的半导体衬底，脊部的宽度在小面附近比在器件内部更小; 形成在包括所述脊部的所述基板上的电流阻挡层; 通过所述电流阻挡层形成在所述脊部的中心的至少一个条纹槽; 以及设置在电流阻挡层上的多层结构，所述多层结构依次具有第一电流阻挡层，激光振荡用有源层和第二电流阻挡层; 其中至少两个侧槽在脊部的中心区域的两侧以与其附近的区域宽度相同的宽度对称地形成。另外，公开了半导体激光装置的制造方法。

3. 发明授权

US5042044A Semiconductor laser device, a semiconductor wafer 失效
标题翻译：半导体激光器件，半导体晶片
公开(公告)号：US5042044A
公开(公告)日：1991-08-20
申请号：US513508
申请日：1990-04-27
申请人： Masaki Kondo , Kazuaki Sasaki , Taiji Morimoto , Mitsuhiro Matsumoto , Hiroyuki Hosoba , Sadayoshi Matsui , Saburo Yamamoto , Takahiro Suyama , Masafumi Kondo
发明人： Masaki Kondo , Kazuaki Sasaki , Taiji Morimoto , Mitsuhiro Matsumoto , Hiroyuki Hosoba , Sadayoshi Matsui , Saburo Yamamoto , Takahiro Suyama , Masafumi Kondo
IPC分类号： H01S5/24 , H01S5/32 , H01S5/323
CPC分类号： H01S5/32308 , H01S5/24 , H01S5/3202 , H01S5/32325 , H01S5/32391
摘要： A semiconductor laser device and a method for the production of the semiconductor laser device are provided, which semiconductor laser device includes a striped channel formed in a semiconductor substrate through a current blocking layer on the substrate and at least two dummy grooves formed in the current blocking layer on each side of the striped channel. Also provided are a semiconductor wafer prepared for the purpose of producing optical devices with an optical waveguide, and a method for the production of the semiconductor wafer. The semiconductor wafer includes a semiconductor substrate, the surface of which has an orientation inclined from the [100] direction to one of the [011] and [011] directions of an angle .theta. satisfying the relationship 0.1.degree.

4. 发明授权

US4878223A Semiconductor laser array device 失效
标题翻译：半导体激光阵列器件
公开(公告)号：US4878223A
公开(公告)日：1989-10-31
申请号：US224558
申请日：1988-07-26
申请人： Taiji Morimoto , Hiroyuki Hosoba , Mitsuhiro Matsumoto , Mototaka Taneya , Sadayoshi Matsui
发明人： Taiji Morimoto , Hiroyuki Hosoba , Mitsuhiro Matsumoto , Mototaka Taneya , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/223 , H01S5/40
CPC分类号： H01S5/4031 , H01S5/2234
摘要： A semiconductor laser array device comprising a substrate with a plurality of grooves and an active layer disposed over the substrate, resulting in optical waveguides within the active layer corresponding to the grooves, wherein the grooves are disposed over the entire area of the substrate and a means for preventing the injection of current into some of the grooves that are positioned outside of the central area of the substrate is disposed whereby the other grooves positioned in the central area of the substrate constitute a laser array portion of the semiconductor laser array device.

5. 发明授权

US4853936A Index guided semiconductor laser device 失效
标题翻译：折射引导半导体激光器件
公开(公告)号：US4853936A
公开(公告)日：1989-08-01
申请号：US181016
申请日：1988-04-13
申请人： Sadayoshi Matsui , Shinji Kaneiwa , Taiji Morimoto , Masahiro Yamaguchi , Mototaka Taneya , Mitsuhiro Matsumoto
发明人： Sadayoshi Matsui , Shinji Kaneiwa , Taiji Morimoto , Masahiro Yamaguchi , Mototaka Taneya , Mitsuhiro Matsumoto
IPC分类号： H01S5/00 , H01S5/10 , H01S5/24
CPC分类号： H01S5/10 , H01S5/24 , H01S5/1064
摘要： An index guided semiconductor laser device comprising a striped optical waveguide in the active layer, at least a part of the wavegide having continuous indentations at the interface between the waveguide and the outside of the waveguide, whereby only laser light of a high-order transverse mode is radiated from the waveguide to the outside of the waveguide and only laser light of the fundamental transverse mode is propagated within the waveguide.
摘要翻译：一种折射率引导半导体激光器件，包括有源层中的带状光波导，波导的至少一部分在波导和波导外侧之间的界面处具有连续的凹陷，从而仅仅是高阶横模的激光从波导辐射到波导的外部，并且只有基本横向模式的激光在波导内传播。

6. 发明授权

US5208468A Semiconductor laser device with a sulfur-containing film provided between the facet and the protective film 失效
标题翻译：半导体激光装置具有设置在小面和保护膜之间的含硫膜
公开(公告)号：US5208468A
公开(公告)日：1993-05-04
申请号：US727375
申请日：1991-07-05
申请人： Hidenori Kawanishi , Taiji Morimoto , Shinji Kaneiwa , Hiroshi Hayashi , Nobuyuki Miyauchi , Seiki Yano , Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Takehiro Shiomoto , Saburo Yamamoto
发明人： Hidenori Kawanishi , Taiji Morimoto , Shinji Kaneiwa , Hiroshi Hayashi , Nobuyuki Miyauchi , Seiki Yano , Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Takehiro Shiomoto , Saburo Yamamoto
IPC分类号： H01S5/02 , H01S5/028
CPC分类号： H01S5/0281 , H01S5/028 , H01S5/0201 , H01S5/0282 , H01S5/0283
摘要： A semiconductor laser device is disclosed which emits laser light from a facet. The semiconductor laser device comprises a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an AlGaAs active layer for laser oscillation, and a protective film formed on the facet, wherein a film containing sulfur is provided between the facet and the protective film.
摘要翻译：公开了从小面发射激光的半导体激光器件。半导体激光器件包括形成在半导体衬底上的多层结构，具有用于激光振荡的AlGaAs有源层的多层结构和形成在该刻面上的保护膜，其中，在该面和保护膜。

7. 发明授权

US5260231A Method for the production of a semiconductor laser 失效
标题翻译：半导体激光器的制造方法
公开(公告)号：US5260231A
公开(公告)日：1993-11-09
申请号：US998436
申请日：1992-12-30
申请人： Hidenori Kawanishi , Taiji Morimoto , Shinji Kaneiwa , Hiroshi Hayashi , Nobuyuki Miyauchi , Seiki Yano , Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Takehiro Shiomoto , Saburo Yamamoto
发明人： Hidenori Kawanishi , Taiji Morimoto , Shinji Kaneiwa , Hiroshi Hayashi , Nobuyuki Miyauchi , Seiki Yano , Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Takehiro Shiomoto , Saburo Yamamoto
IPC分类号： H01S5/02 , H01S5/028 , H01L21/20
CPC分类号： H01S5/0281 , H01S5/028 , H01S5/0201 , H01S5/0282 , H01S5/0283 , Y10S148/095
摘要： A semiconductor laser device is disclosed which emits laser light from a facet. The semiconductor laser device comprises a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an AlGaAs active layer for laser oscillation, and a protective film formed on the facet, wherein a film containing sulfur is provided between the facet and the protective film.
摘要翻译：公开了从小面发射激光的半导体激光器件。半导体激光器件包括形成在半导体衬底上的多层结构，具有用于激光振荡的AlGaAs有源层的多层结构和形成在该刻面上的保护膜，其中，在该面和保护膜。

8. 发明授权

US08358388B2 Planar light source, display device and method for manufacturing same 有权
标题翻译：平面光源，显示装置及其制造方法
公开(公告)号：US08358388B2
公开(公告)日：2013-01-22
申请号：US13101379
申请日：2011-05-05
申请人： Osamu Kawasaki , Taiji Morimoto , Masanori Watanabe
发明人： Osamu Kawasaki , Taiji Morimoto , Masanori Watanabe
IPC分类号： G02F1/1335 , G09F13/04 , G09F13/08
CPC分类号： G02F1/133603 , G02F1/133609 , G02F1/133611
摘要： Light-emitting elements are divided into chromaticity groups on the basis of their chromaticity. In a planar light source, light-emitting elements selected from two of the chromaticity groups are alternately provided in a longitudinal direction and in a transverse direction, respectively. The two chromaticity groups are substantially equally away from a target chromaticity in directions reverse to each other. Further, pairs of two of the light-emitting elements belonging to the two chromaticity groups which are separated from each other, are provided so that distances d2 at which two of the light-emitting elements in each of the pairs are provided are less than distances d1 at which the pairs are provided.
摘要翻译：发光元件根据其色度分为色度组。在平面光源中，从两个色度组中选出的发光元件分别在纵向方向和横向上交替地设置。两个色度组在彼此相反的方向上基本上等于远离目标色度。此外，属于彼此分离的两个色度组的两个发光元件的成对被设置成使得设置有每对中的两个发光元件的距离d2小于距离设置成对的d1。

9. 发明申请

US20110205465A1 PLANAR LIGHT SOURCE, DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：平面光源，显示装置及其制造方法
公开(公告)号：US20110205465A1
公开(公告)日：2011-08-25
申请号：US13101379
申请日：2011-05-05
申请人： Osamu KAWASAKI , Taiji Morimoto , Masanori Watanabe
发明人： Osamu KAWASAKI , Taiji Morimoto , Masanori Watanabe
IPC分类号： G02F1/13357
CPC分类号： G02F1/133603 , G02F1/133609 , G02F1/133611
摘要： Light-emitting elements are divided into chromaticity groups on the basis of their chromaticity. In a planar light source, light-emitting elements selected from two of the chromaticity groups are alternately provided in a longitudinal direction and in a transverse direction, respectively. The two chromaticity groups are substantially equally away from a target chromaticity in directions reverse to each other. Further, pairs of two of the light-emitting elements belonging to the two chromaticity groups which are separated from each other, are provided so that distances d2 at which two of the light-emitting elements in each of the pairs are provided are less than distances d1 at which the pairs are provided.
摘要翻译：发光元件根据其色度分为色度组。在平面光源中，从两个色度组中选出的发光元件分别在纵向方向和横向上交替地设置。两个色度组在彼此相反的方向上基本上等于远离目标色度。此外，属于彼此分离的两个色度组的两个发光元件的成对被设置成使得设置有每对中的两个发光元件的距离d2小于距离设置成对的d1。

10. 发明授权

US07700964B2 Light emitting apparatus, display apparatus and method for controlling light emitting apparatus 有权
标题翻译：发光装置，显示装置及控制发光装置的方法
公开(公告)号：US07700964B2
公开(公告)日：2010-04-20
申请号：US11802997
申请日：2007-05-29
申请人： Taiji Morimoto , Masanori Watanabe
发明人： Taiji Morimoto , Masanori Watanabe
IPC分类号： H01L33/00
CPC分类号： H05B33/14 , C09K11/0883 , C09K11/7721 , C09K11/7734 , C09K11/7774 , H01L25/0753 , H01L33/50 , H01L2924/0002 , H05B33/0857 , H01L2924/00
摘要： In a light emitting apparatus using LEDs, luminance and chromaticity of the LED changes largely due to a temperature change. Meanwhile, by using phosphors, it is possible to improve the stability of the luminance and chromaticity against the temperature change. However, color reproducibility of the light emitting apparatus decreases. Therefore, the light emitting apparatus includes a first LED, a second LED, a first phosphor which is excited by the second LED and emits light whose color is the same as or similar to a color of light emitted from the first LED, and a control circuit which controls a ratio between an emission intensity of the first LED and an emission intensity of the second LED.
摘要翻译：在使用LED的发光装置中，由于温度变化，LED的亮度和色度变化很大。同时，通过使用荧光体，可以提高亮度和色度对温度变化的稳定性。然而，发光装置的色彩再现性降低。因此，发光装置包括第一LED，第二LED，由第二LED激发的第一荧光体，并且发射其颜色与从第一LED发射的光的颜色相同或相似的光，以及控制电路，其控制第一LED的发光强度和第二LED的发光强度之间的比率。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式