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1. 发明申请

US20100244015A1 ORGANIC SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SAME, ORGANIC TRANSISTOR ARRAY, AND DISPLAY 审中-公开
标题翻译：有机半导体器件，其制造方法，有机晶体管阵列和显示器
公开(公告)号：US20100244015A1
公开(公告)日：2010-09-30
申请号：US12797021
申请日：2010-06-09
申请人： Hiroyuki HONDA , Masanao MATSUOKA , Mitsutaka NAGAE , Hironori KOBAYASHI
发明人： Hiroyuki HONDA , Masanao MATSUOKA , Mitsutaka NAGAE , Hironori KOBAYASHI
IPC分类号： H01L51/10 , H01L51/40 , H01L33/00 , H01L51/50
CPC分类号： H01L51/0541 , H01L27/3244
摘要： A major object of the present invention is to provide an organic semiconductor device which is provided with an organic semiconductor transistor having good transistor performance and is producible with high productivity. To achieve the object, the present invention provides an organic semiconductor device comprising: a substrate; a source electrode and a drain electrode which are formed on the substrate; an insulation partitioned part which is formed on the source electrode and the drain electrode, made of an insulation material, formed such that an opening part of the insulation partitioned part is disposed above a channel region formed by the source electrode and the drain electrode and has a function as an interlayer-insulation layer; an organic semiconductor layer which is formed in the opening part of the insulation partitioned part and on the source electrode and the drain electrode, and made of an organic semiconductor material; a gate insulation layer which is formed on the organic semiconductor layer and made of an insulation resin material; and a gate electrode formed on the gate insulation layer, wherein; the insulation partitioned part has a height ranging from 0.1 μm to 1.5 μm.
摘要翻译：本发明的主要目的在于提供一种有机半导体器件，其具有晶体管性能良好的有机半导体晶体管，能够高生产率地生产。为了实现该目的，本发明提供了一种有机半导体器件，包括：衬底; 源电极和漏电极，形成在基板上; 绝缘分隔部分，形成在由绝缘材料制成的源电极和漏极上，形成为绝缘分隔部的开口部设置在由源电极和漏极形成的沟道区的上方，并具有作为层间绝缘层的功能; 有机半导体层，形成在绝缘分隔部分的开口部分中，并且在源电极和漏电极上形成，并由有机半导体材料制成; 栅极绝缘层，其形成在有机半导体层上并由绝缘树脂材料制成; 以及形成在所述栅极绝缘层上的栅电极，其中; 绝缘分隔部的高度为0.1μm〜1.5μm。

2. 发明申请

US20080128685A1 ORGANIC SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SAME, ORGANIC TRANSISTOR ARRAY, AND DISPLAY 审中-公开
标题翻译：有机半导体器件，其制造方法，有机晶体管阵列和显示器
公开(公告)号：US20080128685A1
公开(公告)日：2008-06-05
申请号：US11855295
申请日：2007-09-14
申请人： Hiroyuki HONDA , Masanao MATSUOKA , Mitsutaka NAGAE , Hironori KOBAYASHI
发明人： Hiroyuki HONDA , Masanao MATSUOKA , Mitsutaka NAGAE , Hironori KOBAYASHI
IPC分类号： H01L51/05 , H01L51/40
CPC分类号： H01L51/0541 , H01L27/3244
摘要： A major object of the present invention is to provide an organic semiconductor device which is provided with an organic semiconductor transistor having good transistor performance and is producible with high productivity. To achieve the object, the present invention provides an organic semiconductor device comprising: a substrate, a source electrode and a drain electrode which are formed on the substrate; an insulation partitioned part which is formed on the source electrode and the drain electrode, made of an insulation material, formed such that an opening part of the insulation partitioned part is disposed above a channel region formed by the source electrode and the drain electrode and has a function as an interlayer-insulation layer; an organic semiconductor layer which is formed in the opening part of the insulation partitioned part and on the source electrode and the drain electrode, and made of an organic semiconductor material; a gate insulation layer which is formed on the organic semiconductor layer and made of an insulation resin material; and a gate electrode formed on the gate insulation layer, wherein; the insulation partitioned part has a height ranging from 0.1 μm to 1.5 μm.
摘要翻译：本发明的主要目的在于提供一种有机半导体器件，其具有晶体管性能良好的有机半导体晶体管，能够高生产率地生产。为了实现该目的，本发明提供了一种有机半导体器件，其包括：在基板上形成的基板，源电极和漏电极; 绝缘分隔部分，形成在由绝缘材料制成的源电极和漏极上，形成为绝缘分隔部的开口部设置在由源电极和漏极形成的沟道区的上方，并具有作为层间绝缘层的功能; 有机半导体层，形成在绝缘分隔部分的开口部分中，并且在源电极和漏电极上形成，并由有机半导体材料制成; 栅极绝缘层，其形成在有机半导体层上并由绝缘树脂材料制成; 以及形成在所述栅极绝缘层上的栅电极，其中; 绝缘分隔部的高度为0.1〜1.5μm。

3. 发明申请

US20120070945A1 ORGANIC SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SAME, ORGANIC TRANSISTOR ARRAY, AND DISPLAY 审中-公开
标题翻译：有机半导体器件，其制造方法，有机晶体管阵列和显示器
公开(公告)号：US20120070945A1
公开(公告)日：2012-03-22
申请号：US13227977
申请日：2011-09-08
申请人： Hiroyuki HONDA , Masanao MATSUOKA , Mitsutaka NAGAE , Hironori KOBAYASHI
发明人： Hiroyuki HONDA , Masanao MATSUOKA , Mitsutaka NAGAE , Hironori KOBAYASHI
IPC分类号： H01L21/336
CPC分类号： H01L51/0541 , H01L27/3244
摘要： This disclosure provides an organic semiconductor device including: a substrate; a source electrode and a drain electrode which are formed on the substrate; an insulation partitioned part which is formed on the source electrode and the drain electrode, formed such that an opening part of the insulation partitioned part is disposed above a channel region formed by the source electrode and the drain electrode; an organic semiconductor layer which is formed in the opening part of the insulation partitioned part and on the source electrode and the drain electrode; a gate insulation layer which is formed on the organic semiconductor layer and made of an insulation resin material; and a gate electrode formed on the gate insulation layer, and the insulation partitioned part has a height ranging from 0.1 μm to 1.5 μm.
摘要翻译：本公开提供一种有机半导体器件，包括：衬底; 源电极和漏电极，形成在基板上; 形成在源电极和漏电极上的绝缘分隔部分，其形成为绝缘分隔部分的开口部分设置在由源电极和漏电极形成的沟道区之上; 有机半导体层，形成在绝缘分隔部分的开口部分中，并且在源电极和漏电极上; 栅极绝缘层，其形成在有机半导体层上并由绝缘树脂材料制成; 以及形成在所述栅极绝缘层上的栅电极，所述绝缘分隔部的高度为0.1μm〜1.5μm。

4. 发明申请

US20080119010A1 MANUFACTURING METHOD OF ORGANIC SEMICONDUCTOR DEVICE 有权
标题翻译：有机半导体器件的制造方法
公开(公告)号：US20080119010A1
公开(公告)日：2008-05-22
申请号：US11855271
申请日：2007-09-14
申请人： Mitsutaka NAGAE , Hironori KOBAYASHI , Masanao MATSUOKA , Hiroyuki HONDA
发明人： Mitsutaka NAGAE , Hironori KOBAYASHI , Masanao MATSUOKA , Hiroyuki HONDA
IPC分类号： H01L51/40
CPC分类号： H01L51/0018 , H01L51/0003 , H01L51/0541
摘要： A main object of the present invention is to provide a manufacturing method of an organic semiconductor device, wherein the method enabling an organic semiconductor layer to be patterned simply with high productivity and also enabling an organic semiconductor device having an organic semiconductor transistor to be produced with high productivity. To attain the problem, the present invention provides a manufacturing method of an organic semiconductor device comprising an organic semiconductor transistor formation process, wherein the process includes: an organic semiconductor layer formation step of using a substrate to form an organic semiconductor layer made of an organic semiconductor material on the substrate; a passivation layer formation step of forming pattern-wise on the organic semiconductor layer a passivation layer having an ability of shielding vacuum ultraviolet light; and an organic semiconductor layer patterning step of irradiating vacuum ultraviolet light to the passivation layer and to the organic semiconductor layer to etch the organic semiconductor layer corresponding to a part where the passivation layer is not formed.
摘要翻译：本发明的主要目的在于提供一种有机半导体器件的制造方法，其中使得有机半导体层能够以高生产率简单地进行构图，并且还能够使具有有机半导体晶体管的有机半导体器件与生产力高。为了解决这个问题，本发明提供了一种包括有机半导体晶体管形成工艺的有机半导体器件的制造方法，其中所述工艺包括：有机半导体层形成步骤，使用衬底形成由有机半导体制成的有机半导体层衬底上的半导体材料; 钝化层形成步骤，在有机半导体层上以图形方式形成具有屏蔽真空紫外光的能力的钝化层; 以及向钝化层和有机半导体层照射真空紫外光以蚀刻与未形成钝化层的部分相对应的有机半导体层的有机半导体层图案形成步骤。

5. 发明申请

US20080093594A1 ORGANIC SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF THE SAME, ORGANIC TRANSISTOR ARRAY, AND DISPLAY 审中-公开
标题翻译：有机半导体器件，其制造方法，有机晶体管阵列和显示器
公开(公告)号：US20080093594A1
公开(公告)日：2008-04-24
申请号：US11855308
申请日：2007-09-14
申请人： Hiroyuki HONDA , Hironori KOBAYASHI , Masanao MATSUOKA , Mitsutaka NAGAE
发明人： Hiroyuki HONDA , Hironori KOBAYASHI , Masanao MATSUOKA , Mitsutaka NAGAE
IPC分类号： H01L51/10 , H01L51/48
CPC分类号： H01L51/105 , H01L51/0036 , H01L51/0541 , H01L51/0545
摘要： The present invention mainly intends to provide an organic semiconductor device having an organic semiconductor transistor reduced in off current. In order to achieve the object, the present invention provides an organic semiconductor device comprising a substrate and an organic semiconductor transistor provided with a gate electrode formed on the substrate, a gate insulation layer formed on the gate electrode, source and drain electrodes which are porous bodies and are formed on the gate insulation layer and an organic semiconductor layer which is made of an organic semiconductor material and formed only between the source and drain electrodes.
摘要翻译：本发明主要提供一种有机半导体晶体管的截止电流减小的有机半导体器件。为了实现该目的，本发明提供一种有机半导体器件，其包括基板和设置有形成在基板上的栅电极的有机半导体晶体管，形成在栅电极上的栅极绝缘层，多孔的源极和漏极形成在栅极绝缘层上，并形成有机半导体层，该有机半导体层由有机半导体材料制成，仅在源极和漏极之间形成。

6. 发明申请

US20080085478A1 STRUCTURE FOR PATTERN FORMATION, METHOD FOR PATTERN FORMATION, AND APPLICATION THEREOF 审中-公开
标题翻译：图案形成结构，图案形成方法及其应用
公开(公告)号：US20080085478A1
公开(公告)日：2008-04-10
申请号：US11867791
申请日：2007-10-05
申请人： Hironori KOBAYASHI , Manabu YAMAMOTO , Daigo AOKI , Hironori KAMIYAMA , Shinichi HIKOSAKA , Mitsuhiro KASHIWABARA
发明人： Hironori KOBAYASHI , Manabu YAMAMOTO , Daigo AOKI , Hironori KAMIYAMA , Shinichi HIKOSAKA , Mitsuhiro KASHIWABARA
IPC分类号： G03C1/00 , G02B5/20 , G02B3/00
CPC分类号： B41N1/006 , B29D11/00365 , B41C1/1041 , G02B3/0012 , G02B3/0056 , G02B5/201 , G03F7/0005 , G03F7/0007 , G03F7/001 , G03F7/0043 , G03F7/0757 , G03F7/095 , G03F7/11
摘要： A structure for pattern formation adapted for optically forming a pattern, characterized by comprising: a photocatalyst-containing layer provided on a substrate, the photocatalyst-containing layer containing a material of which the wettability is variable through photocatalytic action upon pattern-wise exposure.
摘要翻译：一种用于图案形成的结构，用于光学地形成图案，其特征在于包括：设置在基底上的含光催化剂的层，所述含光催化剂的层含有通过在图案曝光时的光催化作用可润湿性的材料。

7. 发明申请

US20080081283A1 STRUCTURE FOR PATTERN FORMATION, METHOD FOR PATTERN FORMATION, AND APPLICATION THEREOF 失效
公开(公告)号：US20080081283A1
公开(公告)日：2008-04-03
申请号：US11867781
申请日：2007-10-05
申请人： Hironori KOBAYASHI , Manabu YAMAMOTO , Daigo AOKI , Hironori KAMIYAMA , Shinichi HIKOSAKA , Mitsuhiro KASHIWABARA
发明人： Hironori KOBAYASHI , Manabu YAMAMOTO , Daigo AOKI , Hironori KAMIYAMA , Shinichi HIKOSAKA , Mitsuhiro KASHIWABARA
IPC分类号： G03F7/00 , G03F1/00
CPC分类号： B41N1/006 , B29D11/00365 , B41C1/1041 , G02B3/0012 , G02B3/0056 , G02B5/201 , G03F7/0005 , G03F7/0007 , G03F7/001 , G03F7/0043 , G03F7/0757 , G03F7/095 , G03F7/11
摘要： A structure for pattern formation adapted for optically forming a pattern, characterized by comprising: a photocatalyst-containing layer provided on a substrate, the photocatalyst-containing layer containing a material of which the wettability is variable through photocatalytic action upon pattern-wise exposure.

8. 发明申请

US20080023858A1 STRUCTURE FOR PATTERN FORMATION, METHOD FOR PATTERN FORMATION, AND APPLICATION THEREOF 有权
公开(公告)号：US20080023858A1
公开(公告)日：2008-01-31
申请号：US11867831
申请日：2007-10-05
申请人： Hironori KOBAYASHI , Manabu YAMAMOTO , Daigo AOKI , Hironori KAMIYAMA , Shinichi HIKOSAKA , Mitsuhiro KASHIWABARA
发明人： Hironori KOBAYASHI , Manabu YAMAMOTO , Daigo AOKI , Hironori KAMIYAMA , Shinichi HIKOSAKA , Mitsuhiro KASHIWABARA
IPC分类号： B29D11/00
CPC分类号： B41N1/006 , B29D11/00365 , B41C1/1041 , G02B3/0012 , G02B3/0056 , G02B5/201 , G03F7/0005 , G03F7/0007 , G03F7/001 , G03F7/0043 , G03F7/0757 , G03F7/095 , G03F7/11
摘要： A structure for pattern formation adapted for optically forming a pattern, characterized by comprising: a photocatalyst-containing layer provided on a substrate, the photocatalyst-containing layer containing a material of which the wettability is variable through photocatalytic action upon pattern-wise exposure.

9. 发明申请

US20100051579A1 PATTERN FORMED BODY AND METHOD FOR MANUFACTURING SAME 失效
标题翻译：图案形状体及其制造方法
公开(公告)号：US20100051579A1
公开(公告)日：2010-03-04
申请号：US12616449
申请日：2009-11-11
申请人： Hironori KOBAYASHI
发明人： Hironori KOBAYASHI
IPC分类号： B29D11/00 , C23F1/00
CPC分类号： C12N5/0068 , C12N2533/30 , Y10T428/24802
摘要： A main object of the present invention is to provide a pattern formed body capable of forming highly precise functional parts on various base materials, and a method for manufacturing the same. To achieve the object, the present invention provides a method for manufacturing a pattern formed body, having a plasma radiating step of radiating plasma to a patterning substrate having: a base material; an intermediate layer formed on the base material and containing a silane coupling agent or a polymer of the silane coupling agent; and a resin layer formed in a pattern form on the intermediate layer, wherein a fluorine gas is used as an introduction gas to radiate the plasma from the resin layer side.
摘要翻译：本发明的主要目的是提供一种能够在各种基材上形成高精度功能部件的图案成形体及其制造方法。为了实现该目的，本发明提供了一种用于制造图案形成体的方法，其具有将等离子体发射到具有基底材料的图案形成衬底的等离子体辐射步骤; 形成在基材上并含有硅烷偶联剂或硅烷偶联剂的聚合物的中间层; 以及在中间层上以图案形式形成的树脂层，其中使用氟气作为导入气体，以从树脂层侧辐射等离子体。

10. 发明申请

US20080044745A1 PROCESS FOR PRODUCTION OF PATTERN-FORMING BODY 审中-公开
公开(公告)号：US20080044745A1
公开(公告)日：2008-02-21
申请号：US11926215
申请日：2007-10-29
申请人： Hironori KOBAYASHI , Masato OKABE , Manabu YAMAMOTO
发明人： Hironori KOBAYASHI , Masato OKABE , Manabu YAMAMOTO
IPC分类号： G03F1/00
CPC分类号： G02B3/0012 , G02B5/201 , G03F7/0007 , G03F7/0042 , G03F7/0043 , G03F7/09 , G03F7/11
摘要： A primary object of the present invention is to provide a process for the production of a pattern-forming body, the process enabling the formation of a highly precise pattern, requiring no post-exposure treatment and being free from a fear as to the deterioration of the pattern-forming body itself because no photocatalyst is contained in the produced pattern-forming body. In the present invention, the above problem can be solved by providing a process for the production of a pattern-forming body, the process comprising disposing a catalyst-containing layer-side substrate containing at least a photocatalyst-containing layer and a pattern-forming body substrate containing a characteristic-changeable layer which is changed in characteristics by the action of the photocatalyst in at least said photocatalyst-containing layer such that the photocatalyst-containing layer is in contact with the characteristic-changeable layer, followed by performing exposure to thereby change the characteristics of the exposed portion of the characteristic-changeable layer and thereafter dismounting the photocatalyst-containing layer-side substrate, thereby obtaining a pattern-forming body having a pattern which has been changed in characteristics on the characteristic-changeable layer.

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