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1. 发明申请

US20090181540A1 CHEMICAL MECHANICAL POLISHING METHOD 审中-公开
标题翻译：化学机械抛光方法
公开(公告)号：US20090181540A1
公开(公告)日：2009-07-16
申请号：US12405327
申请日：2009-03-17
申请人： Hirotaka Shida , Masayuki Hattori
发明人： Hirotaka Shida , Masayuki Hattori
IPC分类号： H01L21/304
CPC分类号： C09G1/02 , H01L21/3212
摘要： A chemical mechanical polishing method, including: chemically and mechanically polishing a polishing target surface by continuously performing a first polishing step and a second polishing step having a polishing rate lower than a polishing rate of the first polishing step, a chemical mechanical polishing aqueous dispersion used in the first polishing step and the second polishing step being a mixture of an aqueous dispersion and an aqueous solution, and the polishing rate being changed between the first polishing step and the second polishing step by changing a mixing ratio of the aqueous dispersion and the aqueous solution.
摘要翻译：一种化学机械抛光方法，包括：通过连续进行第一抛光步骤和抛光速率低于第一抛光步骤的抛光速率的抛光速率的化学机械抛光水分散体，使用化学机械抛光水分散体，化学和机械抛光抛光目标表面在第一抛光步骤和第二抛光步骤是水分散体和水溶液的混合物，并且抛光速率在第一抛光步骤和第二抛光步骤之间通过改变水分散体和水性分散体的混合比而改变解。

2. 发明授权

US07560384B2 Chemical mechanical polishing method 有权
标题翻译：化学机械抛光方法
公开(公告)号：US07560384B2
公开(公告)日：2009-07-14
申请号：US11358224
申请日：2006-02-22
申请人： Hirotaka Shida , Masayuki Hattori
发明人： Hirotaka Shida , Masayuki Hattori
IPC分类号： H01L21/302
CPC分类号： C09G1/02 , H01L21/3212
摘要： A chemical mechanical polishing method, including: chemically and mechanically polishing a polishing target surface by continuously performing a first polishing step and a second polishing step having a polishing rate lower than a polishing rate of the first polishing step, a chemical mechanical polishing aqueous dispersion used in the first polishing step and the second polishing step being a mixture of an aqueous dispersion and an aqueous solution, and the polishing rate being changed between the first polishing step and the second polishing step by changing a mixing ratio of the aqueous dispersion and the aqueous solution.
摘要翻译：一种化学机械抛光方法，包括：通过连续进行第一抛光步骤和抛光速率低于第一抛光步骤的抛光速率的抛光速率的化学机械抛光水分散体，使用化学机械抛光水分散体，化学和机械抛光抛光目标表面在第一抛光步骤和第二抛光步骤是水分散体和水溶液的混合物，并且抛光速率在第一抛光步骤和第二抛光步骤之间通过改变水分散体和水性分散体的混合比而改变解。

3. 发明申请

US20070049180A1 Aqueous dispersion for chemical mechanical polishing, kit for preparing the aqueous dispersion, chemical mechanical polishing process, and process for producing semiconductor devices 审中-公开
标题翻译：用于化学机械抛光的水分散体，用于制备水性分散体的试剂盒，化学机械抛光工艺以及用于制备半导体器件的方法
公开(公告)号：US20070049180A1
公开(公告)日：2007-03-01
申请号：US11508893
申请日：2006-08-24
申请人： Hirotaka Shida , Akihiro Takemura , Masayuki Hattori , Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima , Susumu Yamamoto , Yoshikuni Tateyama , Hiroyuki Yano
发明人： Hirotaka Shida , Akihiro Takemura , Masayuki Hattori , Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima , Susumu Yamamoto , Yoshikuni Tateyama , Hiroyuki Yano
IPC分类号： B24B7/30
CPC分类号： C09G1/02 , B24B37/044 , H01L21/3212 , H01L21/76835 , H01L21/7684
摘要： An aqueous dispersion for chemical mechanical polishing contains water, a polyvinylpyrrolidone having a weight-average molecular weight exceeding 200,000, an oxidant, a protective film-forming agent and abrasive grains, the protective film-forming agent containing a first metal compound-forming agent which forms a water-insoluble metal compound, and a second metal compound-forming agent which forms a water-soluble metal compound. The aqueous dispersion is capable of uniformly and stably polishing a metal film at low friction without causing defects in a metal film and an insulating film.
摘要翻译：用于化学机械抛光的水性分散体含有水，重均分子量超过200,000的聚乙烯吡咯烷酮，氧化剂，保护性成膜剂和磨料颗粒，所述保护性成膜剂含有第一金属化合物形成剂，所述第一金属化合物形成剂形成水不溶性金属化合物和形成水溶性金属化合物的第二金属化合物形成剂。水分散体能够以低摩擦力均匀且稳定地抛光金属膜，而不会在金属膜和绝缘膜中产生缺陷。

4. 发明授权

US07378349B2 Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method 有权
标题翻译：化学机械抛光水性分散体和化学机械抛光方法
公开(公告)号：US07378349B2
公开(公告)日：2008-05-27
申请号：US11102639
申请日：2005-04-11
申请人： Tomohisa Konno , Hirotaka Shida , Kiyonobu Kubota , Masayuki Hattori , Nobuo Kawahashi
发明人： Tomohisa Konno , Hirotaka Shida , Kiyonobu Kubota , Masayuki Hattori , Nobuo Kawahashi
IPC分类号： H01L21/461
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/31053 , H01L21/3212 , H01L21/76819
摘要： Disclosed is a chemical mechanical polishing aqueous dispersion comprising (A1) first fumed silica having a specific surface area of not less than 10 m2/g and less than 160 m2/g and an average secondary particle diameter of not less than 170 nm and not more than 250 nm and (A2) second fumed silica having a specific surface area of not less than 160 m2/g and an average secondary particle diameter of not less than 50 nm and less than 170 nm. Also disclosed is a chemical mechanical polishing method using the chemical mechanical polishing aqueous dispersion. According to the chemical mechanical polishing aqueous dispersion and the chemical mechanical polishing method, a chemical mechanical polishing process wherein a barrier metal layer and a cap layer can be efficiently removed by polishing and damage to an insulating film material of a low dielectric constant present in the underlying layer is reduced can be carried out.
摘要翻译：公开了一种化学机械抛光水分散体，其包含（A1）比表面积不小于10m 2 / g且小于160m 2 / g的第一热解法二氧化硅， g，平均二次粒径为170nm以上250nm以下，（A2）比表面积为160m 2 / g以上的第二热解法二氧化硅，平均二次粒径不小于50nm且小于170nm。还公开了使用化学机械研磨水分散体的化学机械研磨方法。根据化学机械抛光水分散体和化学机械抛光方法，化学机械抛光方法可以通过抛光和损坏存在于介质中的低介电常数的绝缘薄膜材料来有效地去除阻挡金属层和盖层底层减少可以进行。

5. 发明申请

US20060186089A1 Chemical mechanical polishing method 有权
公开(公告)号：US20060186089A1
公开(公告)日：2006-08-24
申请号：US11358224
申请日：2006-02-22
申请人： Hirotaka Shida , Masayuki Hattori
发明人： Hirotaka Shida , Masayuki Hattori
IPC分类号： C03C15/00 , B44C1/22 , C23F1/00
CPC分类号： C09G1/02 , H01L21/3212
摘要： A chemical mechanical polishing method, including: chemically and mechanically polishing a polishing target surface by continuously performing a first polishing step and a second polishing step having a polishing rate lower than a polishing rate of the first polishing step, a chemical mechanical polishing aqueous dispersion used in the first polishing step and the second polishing step being a mixture of an aqueous dispersion and an aqueous solution, and the polishing rate being changed between the first polishing step and the second polishing step by changing a mixing ratio of the aqueous dispersion and the aqueous solution.

6. 发明申请

US20050227451A1 Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method 有权
标题翻译：化学机械抛光水性分散体和化学机械抛光方法
公开(公告)号：US20050227451A1
公开(公告)日：2005-10-13
申请号：US11102639
申请日：2005-04-11
申请人： Tomohisa Konno , Hirotaka Shida , Kiyonobu Kubota , Masayuki Hattori , Nobuo Kawahashi
发明人： Tomohisa Konno , Hirotaka Shida , Kiyonobu Kubota , Masayuki Hattori , Nobuo Kawahashi
IPC分类号： C09G1/02 , H01L21/76
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/31053 , H01L21/3212 , H01L21/76819
摘要： Disclosed is a chemical mechanical polishing aqueous dispersion comprising (A1) first fumed silica having a specific surface area of not less than 10 m2/g and less than 160 m2/g and an average secondary particle diameter of not less than 170 nm and not more than 250 nm and (A2) second fumed silica having a specific surface area of not less than 160 m2/g and an average secondary particle diameter of not less than 50 nm and less than 170 nm. Also disclosed is a chemical mechanical polishing method using the chemical mechanical polishing aqueous dispersion. According to the chemical mechanical polishing aqueous dispersion and the chemical mechanical polishing method, a chemical mechanical polishing process wherein a barrier metal layer and a cap layer can be efficiently removed by polishing and damage to an insulating film material of a low dielectric constant present in the underlying layer is reduced can be carried out.
摘要翻译：公开了一种化学机械抛光水分散体，其包含（A1）比表面积不小于10m 2 / g且小于160m 2 / g的第一热解法二氧化硅， g，平均二次粒径为170nm以上250nm以下，（A2）比表面积为160m 2 / g以上的第二热解法二氧化硅，平均二次粒径不小于50nm且小于170nm。还公开了使用化学机械研磨水分散体的化学机械研磨方法。根据化学机械抛光水分散体和化学机械抛光方法，化学机械抛光方法可以通过抛光和损坏存在于介质中的低介电常数的绝缘薄膜材料来有效地去除阻挡金属层和盖层底层减少可以进行。

7. 发明申请

US20080045016A1 CLEANING COMPOSITION, CLEANING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：清洁组合物，清洁方法和半导体器件的制造方法
公开(公告)号：US20080045016A1
公开(公告)日：2008-02-21
申请号：US11833534
申请日：2007-08-03
申请人： Michiaki Andou , Tomohisa Konno , Hirotaka Shida , Kazuhito Uchikura , Nobuyuki Kurashima , Gaku Minamihaba , Yoshikuni Tateyama , Hiroyuki Yano
发明人： Michiaki Andou , Tomohisa Konno , Hirotaka Shida , Kazuhito Uchikura , Nobuyuki Kurashima , Gaku Minamihaba , Yoshikuni Tateyama , Hiroyuki Yano
IPC分类号： H01L21/461 , C11D3/37
CPC分类号： C11D11/0047 , C11D3/37 , C11D17/06 , H01L21/02074
摘要： A cleaning composition can decontaminate a surface of a chemically mechanically polished semiconductor substrate having a metal wiring and a low dielectric constant film and can highly remove impurities such as residual abrasive grains, residual polishing waste, and metal ions on the metal wiring and low dielectric constant film without corroding the metal wiring, degrading electric characteristics of the low dielectric constant film, and causing mechanical damage to the low dielectric constant film. A cleaning method of a semiconductor substrate uses the cleaning composition, and a manufacturing method of a semiconductor substrate includes a step of performing the cleaning method.The cleaning composition is used for a chemically mechanically polished surface, and includes organic polymer particles (A) having a crosslinked structure and an average dispersed particle diameter of 10 nm or more and less than 100 nm, and a complexing agent (B).
摘要翻译：清洁组合物可以对具有金属布线和低介电常数膜的化学机械抛光的半导体衬底的表面进行去污染，并且可以高度去除金属布线上的残留磨粒，残留抛光废料和金属离子等杂质和低介电常数膜不会腐蚀金属布线，降低低介电常数膜的电特性，并对低介电常数膜造成机械损伤。半导体衬底的清洁方法使用清洁组合物，并且半导体衬底的制造方法包括执行清洁方法的步骤。清洁组合物用于化学机械抛光的表面，并且包括具有交联结构和平均分散粒径为10nm以上且小于100nm的有机聚合物粒子（A）和络合剂（B）。

8. 发明申请

US20120322348A1 PAD FOR CHEMICAL MECHANICAL POLISHING AND METHOD OF CHEMICAL MECHANICAL POLISHING USING SAME 审中-公开
标题翻译：化学机械抛光垫及其化学机械抛光方法
公开(公告)号：US20120322348A1
公开(公告)日：2012-12-20
申请号：US13518230
申请日：2010-12-14
申请人： Katsutaka Yokoi , Ayako Maekawa , Hirotaka Shida , Satoshi Kamo , Shinji Tonsho , Keiichi Satou , Naoki Nishiguchi , Hiroyuki Tano
发明人： Katsutaka Yokoi , Ayako Maekawa , Hirotaka Shida , Satoshi Kamo , Shinji Tonsho , Keiichi Satou , Naoki Nishiguchi , Hiroyuki Tano
IPC分类号： B24B37/24 , B24B1/00
CPC分类号： B24B37/24 , B24B37/042 , C08G18/4804 , C08G18/4833 , C08G18/4854 , C08G18/7664 , C08L71/00 , C08L75/04 , C08L2205/025 , C08L2205/03
摘要： A chemical mechanical polishing pad includes a polishing layer formed using a composition that includes a thermoplastic polyurethane, the polishing layer having a specific gravity of 1.15 to 1.30, and a durometer D hardness of 50 to 80.
摘要翻译：化学机械抛光垫包括使用包含热塑性聚氨酯的组合物形成的抛光层，所述抛光层的比重为1.15至1.30，硬度D硬度为50至80。

9. 发明授权

US08119517B2 Chemical mechanical polishing method and method of manufacturing semiconductor device 有权
标题翻译：化学机械抛光方法及制造半导体器件的方法
公开(公告)号：US08119517B2
公开(公告)日：2012-02-21
申请号：US12477332
申请日：2009-06-03
申请人： Hirotaka Shida , Yukiteru Matsui , Atsushi Shigeta , Shinichi Hirasawa , Hirokazu Kato , Masako Kinoshita , Takeshi Nishioka , Hiroyuki Yano
发明人： Hirotaka Shida , Yukiteru Matsui , Atsushi Shigeta , Shinichi Hirasawa , Hirokazu Kato , Masako Kinoshita , Takeshi Nishioka , Hiroyuki Yano
IPC分类号： H01L21/4763 , H01L21/461
CPC分类号： H01L21/7681 , C09G1/02 , H01L21/31058 , H01L21/31144 , H01L21/76835
摘要： A chemical mechanical polishing method comprises polishing an organic film using a slurry including polymer particles having a surface functional group and a water-soluble polymer.
摘要翻译：化学机械抛光方法包括使用包含具有表面官能团的聚合物颗粒和水溶性聚合物的浆料来抛光有机膜。

10. 发明申请

US20100221918A1 AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING AND METHOD FOR PREPARING THE SAME, KIT FOR PREPARING AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING, AND CHEMICAL MECHANICAL POLISHING METHOD FOR SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于化学机械抛光的水性分散体及其制备方法，用于制备用于化学机械抛光的水性分散体的试剂盒和用于半导体器件的化学机械抛光方法
公开(公告)号：US20100221918A1
公开(公告)日：2010-09-02
申请号：US12676272
申请日：2008-08-12
申请人： Akihiro Takemura , Mitsuru Meno , Yuuji Shimoyama , Hirotaka Shida
发明人： Akihiro Takemura , Mitsuru Meno , Yuuji Shimoyama , Hirotaka Shida
IPC分类号： H01L21/304 , H01L21/306 , C09K13/00
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463
摘要： A chemical mechanical polishing aqueous dispersion includes (A) a sulfonic acid group-containing water-soluble polymer, (B) an amino acid, (C) abrasive grains, and (D) an oxidizing agent.
摘要翻译：化学机械研磨用水系分散体包含（A）含有磺酸基的水溶性聚合物，（B）氨基酸，（C）磨粒，（D）氧化剂。

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