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    • 2. 发明专利
    • Silicon-cross-linked thiophene oligomer and electronic device using the same
    • 使用相同的硅 - 交联的二聚体低聚物和电子器件
    • JP2007311569A
    • 2007-11-29
    • JP2006139397
    • 2006-05-18
    • Hiroshima UnivTokai Univ国立大学法人広島大学学校法人東海大学
    • OSHITA JOJIKUNAI ATSUTAKAKIN TOKAIZUMI ISATERUKUNUGI YOSHITOKOSUGE TAKAO
    • H01L51/30C08G61/12H01L29/786H01L51/05
    • PROBLEM TO BE SOLVED: To provide a silicon-cross-linked thiophene oligomer superior in FET characteristics and an electronic device.
      SOLUTION: The silicon-cross-linked thiophene olygomer is expressed by formulae (I), (II) and (III) wherein R
      1 , R
      2 , R
      6 , R
      7 , R
      8 and R
      9 are independently substituents having structures expressed by an alkyl group, an alkenyl group, an alkynyl group, an alkoxyl group, an aryl group and a silyl group; R
      3 , R
      4 are independently an alkyl group, an alkenyl group, an alkynyl group, an alkoxyl group, an alkylthio group, a silyl group, or an aryl group; n
      1 and n
      2 are independently integers 4-10, m
      1 is an integer 1-6, and m
      2 and m
      3 are independently integers 1-3; and at least one substituent selected among an alkyl group, an alkenyl group, an alkynil group, an alkoxyl group, an aryl group, an amino group and an alkylthio group may be substituted at the β-place of a thiophene ring.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供优异的FET特性的硅交联噻吩低聚物和电子器件。 解决方案:硅交联的噻吩共聚物由式(I),(II)和(III)表示,其中R 1,R 2,R 2,R 3, R SP< SP> 7< SP>< SP>和< SP> 9< SP>和< SP> 9< SP>是独立的具有由烷基, 烯基,炔基,烷氧基,芳基和甲硅烷基; R SP 3独立地为烷基,烯基,炔基,烷氧基,烷硫基,甲硅烷基或芳基; n 1 和n 2 独立地为4-10,m为1〜6,m为2〜 SB>和m 3 独立地为整数1-3; 选自烷基,烯基,炔基,烷氧基,芳基,氨基和烷硫基中的至少一个取代基可以在噻吩环的β-位被取代。 版权所有(C)2008,JPO&INPIT
    • 5. 发明专利
    • Organosilicon polymer
    • 有机硅聚合物
    • JP2008214456A
    • 2008-09-18
    • JP2007052673
    • 2007-03-02
    • Hiroshima UnivTokuyama Corp国立大学法人広島大学株式会社トクヤマ
    • OSHITA JOJIMAEHARA TAKAYUKIIWASAKI FUMIAKI
    • C08G77/60H01L21/027
    • PROBLEM TO BE SOLVED: To provide a novel polymer being useful as a raw material for functional materials and for a variety of industrial materials such as sealing agents and coating agents for electronic materials and featured by not only excellence in heat resistance and weather resistance but also excellence in operability.
      SOLUTION: The organosilicon polymer having an adamantane skeleton and an Si-O-bonds in the main chain is obtained, for example, by dehydrogenatively coupling an adamantane polyol, such as 1,3-adamantane diol, with a hydrosilane compound, such as phenylsilane. In the formula, R
      1 to R
      4 are each independently a hydrogen atom or a substituent such as a methyl group or a phenyl group.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供一种新型聚合物,可用作功能材料和各种工业材料的原料,如密封剂和电子材料用涂料,不仅具有优异的耐热性和耐候性 抵抗力也是卓越的可操作性。 解决方案:主链中具有金刚烷骨架和Si-O-键的有机硅聚合物,例如通过将金刚烷多元醇如1,3-金刚烷二醇与氢硅烷化合物脱氢偶合得到, 如苯基硅烷。 在该式中,R 1至R 4各自独立地为氢原子或取代基如甲基或苯基。 版权所有(C)2008,JPO&INPIT
    • 7. 发明专利
    • Dithienogermole polymer and organic semiconductor device containing the same
    • 双晶聚合物和含有它的有机半导体器件
    • JP2012162514A
    • 2012-08-30
    • JP2011125732
    • 2011-06-03
    • Hiroshima UnivKuraray Co Ltd国立大学法人広島大学株式会社クラレ
    • OSHITA JOJIHARIMA YUTAKAIZAWA TAKAFUMISUGIOKA TAKASHI
    • C07F7/30H01L29/786H01L51/05H01L51/30H01L51/40H01L51/42
    • Y02E10/549Y02P70/521
    • PROBLEM TO BE SOLVED: To provide a dithienogermole polymer which is useful as an organic semiconductor material having excellent durability and stability of semiconductor characteristics and which has high heat stability and to provide an organic semiconductor device formed from the organic semiconductor material containing the dithienogermole polymer.SOLUTION: The dithienogermole polymer is represented by chemical formula (1) (in formula, each of Rand Rdenotes a 1-20C hydrocarbon group which may have substituents independently, Ar denotes any one selected from a bivalent aromatic ring which may have substituents, a bivalent multinuclear aromatic ring which may have substituents having the number of aromatic rings of 2 to 7 and a bivalent arylene group formed by connecting a plurality of bivalent aromatic rings which may have substituents and/or bivalent multinuclear aromatic rings which may have substituents having the number of aromatic rings of 2 to 7 and n denotes an integer of at least 2). The organic semiconductor device has the dithienogermole polymer as an organic semiconductor layer.
    • 要解决的问题:提供一种可用作半导体特性的耐久性和稳定性优异的有机半导体材料并具有高热稳定性的二噻吩并茂聚合物,并提供由含有有机半导体材料的有机半导体材料形成的有机半导体器件 二噻吩基聚合物。 解决方案:二噻吩并茂聚合物由化学式(1)表示(在式中,R 1 和R 2 表示可以具有取代基的1-20C烃基,Ar表示可以具有取代基的二价芳环中的任意一种,可具有芳环数为2〜7的取代基的二价多核芳香环和 通过连接可具有取代基的多个二价芳环和/或可具有芳环数为2〜7的取代基的二价多核芳环形成的二价亚芳基,n表示2以上的整数。 有机半导体器件具有二噻吩并茂聚合物作为有机半导体层。 版权所有(C)2012,JPO&INPIT
    • 8. 发明专利
    • New copper complex and utilization thereof
    • 新铜复合和利用
    • JP2012126665A
    • 2012-07-05
    • JP2010278172
    • 2010-12-14
    • Hiroshima Univ国立大学法人広島大学
    • YOSHIDA HIROTOOSHITA JOJI
    • C07F9/50B01J31/22C07B61/00C07F1/08C07F5/02
    • Y02P20/52
    • PROBLEM TO BE SOLVED: To provide a new copper complex utilizable as a catalyst or the like in a method for producing a diborated alkene compound, and to provide a utilization technique thereof.SOLUTION: The copper complex using a compound represented by general formula (1) is excellent as the catalyst or the like in the method for producing the diborated alkene compound. (In the formula, R1 to R3 are each independently 1-20C alkyl which may be substituted, 1-20C alkenyl which may be substituted, 6-20C aryl which may be substituted, 6-20C aralkyl which may be substituted, 4-20C heteroaryl which may be substituted, 5-20C heteroaralkyl which may be substituted, 1-20C alkylene which may be substituted, 6-20C arylene which may be substituted or 1-20C arylene-alkylene which may be substituted).
    • 待解决的问题:提供一种可用作催化剂等的新的铜络合物,用于生产乙酸烯烃化合物的方法,并提供其利用技术。 解决方案:使用由通式(1)表示的化合物的铜络合物作为制备二硼酸烯烃化合物的方法中的催化剂等是优异的。 (式中,R 1〜R 3各自独立地为可以被取代的1〜20个碳原子的烷基,可以被取代的1〜20个碳原子的烷基,可以被取代的碳原子数为6〜20的芳基,可被取代的碳原子数为6〜20的芳烷基, 可以被取代的杂芳基,可以被取代的5-20C杂芳烷基,可被取代的1-20C亚烷基,可被取代的6-20C亚芳基或可被取代的1-20C亚芳基。 版权所有(C)2012,JPO&INPIT