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    • 3. 发明授权
    • Highly hard thin film and method for production thereof
    • 高硬度薄膜及其制造方法
    • US5648174A
    • 1997-07-15
    • US420606
    • 1995-04-12
    • Hiroshi YamagataAkihisa InoueTsuyoshi MasumotoJunichi Nagahora
    • Hiroshi YamagataAkihisa InoueTsuyoshi MasumotoJunichi Nagahora
    • C23C14/00C23C14/06C23C14/14C23C14/58
    • C23C14/5806C23C14/0042C23C14/06C23C14/0688C23C14/14C23C14/58C23C14/584Y10T428/24942Y10T428/25Y10T428/31678
    • A hard thin film having fine crystalline ceramic particles dispersed in a metallic matrix phase is disclosed. The production of the film is effected by first depositing a substantially amorphous film on a substrate and then heat-treating the deposited film. Deposition of the film on the substrate is carried out by using a source of evaporation having a composition represented by the general formula: Al.sub.a M.sub.b, wherein M stands for at least one element selected from the group consisting of Ti, Ta, V, Cr, Zr, Nb, Mo, Hf, W, Mn, Fe, Co, Ni, and Cu and "a" and "b" respectively stand for atomic % in the ranges of 60.ltoreq.a.ltoreq.98.5 and 1.5.ltoreq.b.ltoreq.40, providing a+b=100. Deposition is effected by a physical vapor deposition process in an atmosphere of an inert gas containing a reaction gas while controlling the feed rate of the reaction gas into a chamber in such a manner that the partial pressure of the react/on gas is kept constant or varied continuously or stepwise. By this method, there can be obtained a hard composite film having fine ceramic particles dispersed in a metallic matrix phase or a dense, hard, and composite film having a composition and structure obliquely varied from a substantially crystalline metallic phase to a crystalline ceramic phase in the direction of thickness of the film.
    • 公开了一种具有分散在金属基体相中的细晶体陶瓷颗粒的硬质薄膜。 通过首先在基板上沉积基本上非晶的膜然后对沉积的膜进行热处理来实现膜的制备。 通过使用具有由通式AlaMb表示的组成的蒸发源进行膜的沉积,其中M表示选自Ti,Ta,V,Cr,Zr中的至少一种元素 ,Nb,Mo,Hf,W,Mn,Fe,Co,Ni和Cu,“a”和“b”分别表示60≤a≤98.5的范围内的原子% b = 40,提供+ b = 100。 通过在包含反应气体的惰性气体的气氛中的物理气相沉积工艺进行沉积,同时将反应气体的进料速率控制在室内,使得反应/导入气体的分压保持恒定,或 连续或逐步变化。 通过该方法,可以获得具有分散在金属基体相中的细微陶瓷颗粒的硬质复合膜或致密的,硬的和复合的膜,其具有从基本上结晶的金属相到结晶陶瓷相倾斜变化的组成和结构 膜的厚度方向。
    • 4. 发明授权
    • Hard wear-resistant film and method for production thereof
    • 硬质耐磨膜及其制造方法
    • US5366564A
    • 1994-11-22
    • US120735
    • 1993-09-14
    • Hiroshi YamagataAkihisa InoueTsuyoshi Masumoto
    • Hiroshi YamagataAkihisa InoueTsuyoshi Masumoto
    • C23C14/00C23C14/06C23C14/14C23C14/22C23C14/24C23C14/32C23C14/34C22C21/00
    • C23C14/0641C23C14/0021C23C14/14Y10S148/902Y10T428/12764
    • A hard wear-resistant film is formed on a substrate in an atmosphere of an inert gas by using a target of a composition of Al.sub.a Ti.sub.b (wherein "a" and "b" stand for atomic percentages respectively in the ranges of 62 at %.ltoreq.a.ltoreq.85 at % and 15 at %.ltoreq.b.ltoreq.38 at %, providing a+b=100 at %) or Al.sub.c Ta.sub.d (wherein "c" and "d" stand for atomic percentages respectively in the ranges of 60 at %.ltoreq.c.ltoreq.80 at % and 20 at %.ltoreq.d.ltoreq.40 at %, providing c+d=100 at %) and by a sputtering process or ion plating process while varying continuously or stepwise the feed rate of a nitrogen-containing reaction gas into a chamber. The film consequently formed has a composition and structure thereof continuously or stepwise varied from a substantially amorphous metal of a part being in contact with the substrate to an (Al, Ti)N or (Al, Ta)N crystalline ceramic phase with the nitrogen content continuously or stepwise increased in the direction of the surface of the film.
    • 通过使用AlaTib组合物的靶(其中“a”和“b”分别代表62原子%的范围的原子百分比)在惰性气体的气氛中在基底上形成耐硬的耐磨膜, = a%,15 at%,b = 38 at%,提供+ b = 100 at%)或AlcTad(其中“c”和“d”分别表示原子百分比 范围为60at%,%C%= 80 at%,20 at%,d = 40 at%,提供c + d = 100at%),并通过溅射工艺或离子电镀工艺改变 将含氮反应气体的进料速率连续或逐步地进入室。 由此形成的膜的组成和结构从与基板接触的部分的基本非晶态金属连续或逐步变化为具有氮含量的(Al,Ti)N或(Al,Ta)N结晶陶瓷相 在膜的表面方向上连续或逐步增加。
    • 6. 发明授权
    • Liquid crystal display device
    • 液晶显示装置
    • US08358259B2
    • 2013-01-22
    • US11822252
    • 2007-07-03
    • Nagatoshi KurahashiMasahiro IshiiHiroshi Yamagata
    • Nagatoshi KurahashiMasahiro IshiiHiroshi Yamagata
    • G09G3/36
    • G02F1/134363G02F2001/133388G09G3/3648G09G2300/0434G09G2310/0232
    • The present invention provides a liquid crystal display device which can obviate the generation of leaking of light and display irregularities in the vicinities of so-called dummy pixels. The liquid crystal display device includes a pair of substrates which are arranged to face each other in an opposed manner with liquid crystal sandwiched therebetween, a plurality of gate signal lines and a plurality of drain signal lines which are formed on one substrate in a matrix array, a plurality of pixel regions defined by the gate signal lines and the drain signal lines, and a reference electrode and a pixel electrode which are formed in the inside of each pixel region. In such a constitution, the plurality of pixel regions are formed in both a display region and a non-display region, and a voltage applied to the reference electrodes is applied to the pixel electrodes in the inside of the pixel regions in the non-display region.
    • 本发明提供一种液晶显示装置,其能够消除所谓的虚拟像素附近的光的泄漏的产生和显示不规则性。 液晶显示装置包括一对基板,它们以夹在其间的液晶相对的方式彼此相对配置,多个栅极信号线和多个漏极信号线,其形成在矩阵阵列中的一个基板上 ,由栅极信号线和漏极信号线限定的多个像素区域以及形成在每个像素区域的内部的参考电极和像素电极。 在这种结构中,多个像素区域形成在显示区域和非显示区域中,并且施加到参考电极的电压被施加到非显示器中的像素区域的内部的像素电极 地区。