专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100041240A1 FOCUS RING, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：聚焦环，等离子体加工设备和等离子体处理方法
公开(公告)号：US20100041240A1
公开(公告)日：2010-02-18
申请号：US12539250
申请日：2009-08-11
申请人： Hiroshi TSUJIMOTO , Toshifumi Nagaiwa , Tatsuya Handa
发明人： Hiroshi TSUJIMOTO , Toshifumi Nagaiwa , Tatsuya Handa
IPC分类号： H01L21/30 , C23C16/54 , H01L21/3065
CPC分类号： H01J37/32642
摘要： A focus ring of a ring shape is disposed to surround a target substrate on a lower electrode on which the target substrate is mounted in a process chamber. The process chamber receives the target substrate and subjects the received target substrate to a plasma process. At the point of time when the focus ring is first used for the plasma process, a distance between a lower side of an edge portion of the target substrate and a portion of the focus ring facing the lower side of the edge portion of the target substrate is set to be equal to or greater than about 0.4 mm.
摘要翻译：设置环形的聚焦环，以围绕目标基板在目标基板上安装在处理室中的目标基板上。处理室接收目标衬底并使所接收的目标衬底经受等离子体处理。在聚焦环首先用于等离子体处理的时刻，目标基板的边缘部分的下侧与对置基板的边缘部分的下侧的聚焦环的一部分之间的距离设定为等于或大于约0.4mm。

2. 发明申请

US20100025372A1 PLASMA PROCESSING METHOD AND APPARATUS 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：US20100025372A1
公开(公告)日：2010-02-04
申请号：US12533700
申请日：2009-07-31
申请人： Hiroshi Tsujimoto , Toshifumi Nagaiwa , Yuji Otsuka
发明人： Hiroshi Tsujimoto , Toshifumi Nagaiwa , Yuji Otsuka
IPC分类号： B44C1/22 , C23F1/08
CPC分类号： H01J37/32091 , H01J2237/0206 , H01L21/6833
摘要： In a plasma processing method, a conductor of an electrostatic chuck (ESC) and an electrode are electrically grounded prior to starting the plasma processing. A DC voltage with a polarity is applied to the conductor at a first time point after loading a substrate on the electrode. Then, the electrode is switched from an electrically grounded state to an electrically floating state at a second time point. A RF power is then applied to the electrode at a third time point. The application of the RF power is stopped at a fourth time point after a specified time has lapsed from the third time point. Then, the electrode is switched from the electrically floating state to the electrically grounded state at a fifth time point. Thereafter, the application of the DC voltage is stopped and the conductor is restored to a ground potential at a sixth time point.
摘要翻译：在等离子体处理方法中，静电卡盘（ESC）的导体和电极在开始等离子体处理之前被电接地。在将基板加载到电极上之后，在第一时间点向导体施加极性的直流电压。然后，电极在第二时间点从电接地状态切换到电浮动状态。然后在第三时间点将RF功率施加到电极。在从第三时间点经过指定时间之后，在第四时间点停止RF功率的应用。然后，电极在第五时刻从电浮动状态切换到电接地状态。此后，直流电压的施加停止，并且导体在第六时间点恢复到接地电位。

3. 发明授权

US08277673B2 Plasma processing method and apparatus 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：US08277673B2
公开(公告)日：2012-10-02
申请号：US12533700
申请日：2009-07-31
申请人： Hiroshi Tsujimoto , Toshifumi Nagaiwa , Yuji Otsuka
发明人： Hiroshi Tsujimoto , Toshifumi Nagaiwa , Yuji Otsuka
IPC分类号： C03C15/00 , C03C25/68 , H05H1/24
CPC分类号： H01J37/32091 , H01J2237/0206 , H01L21/6833
摘要： In a plasma processing method, a conductor of an electrostatic chuck (ESC) and an electrode are electrically grounded prior to starting the plasma processing. A DC voltage with a polarity is applied to the conductor at a first time point after loading a substrate on the electrode. Then, the electrode is switched from an electrically grounded state to an electrically floating state at a second time point. A RF power is then applied to the electrode at a third time point. The application of the RF power is stopped at a fourth time point after a specified time has lapsed from the third time point. Then, the electrode is switched from the electrically floating state to the electrically grounded state at a fifth time point. Thereafter, the application of the DC voltage is stopped and the conductor is restored to a ground potential at a sixth time point.
摘要翻译：在等离子体处理方法中，静电卡盘（ESC）和电极的导体在开始等离子体处理之前被电接地。在将基板加载到电极上之后，在第一时间点向导体施加极性的直流电压。然后，电极在第二时间点从电接地状态切换到电浮动状态。然后在第三时间点将RF功率施加到电极。在从第三时间点经过指定时间之后，在第四时间点停止施加RF功率。然后，电极在第五时刻从电浮动状态切换到电接地状态。此后，直流电压的施加停止，并且导体在第六时间点恢复到接地电位。

4. 发明申请

US20090242128A1 PLASMA PROCESSING APPARATUS AND METHOD 审中-公开
标题翻译：等离子体加工设备和方法
公开(公告)号：US20090242128A1
公开(公告)日：2009-10-01
申请号：US12411814
申请日：2009-03-26
申请人： Kenji TAGO , Hiroshi Tsuchiya , Yuji Otsuka , Hiroshi Tsumjimoto , Toshifumi Nagaiwa , Tsuyoshi Yoshida
发明人： Kenji TAGO , Hiroshi Tsuchiya , Yuji Otsuka , Hiroshi Tsumjimoto , Toshifumi Nagaiwa , Tsuyoshi Yoshida
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32706 , H01L21/67109 , H01L21/6831 , H01L21/68742 , H01L21/68785
摘要： A plasma processing apparatus includes an radio frequency (RF) power supply for applying an RF power for generating a plasma to at least one of an upper and a lower electrode which are disposed to face each other in a processing chamber, a high voltage power supply for applying a high voltage to the lower electrode to electrostatically adsorb the substrate to be held thereon and a control unit for controlling the RF power supply and the high voltage power supply. The control unit controls the high voltage power supply so as to apply a high voltage equal to or less than −1500 V to the lower electrode.
摘要翻译：一种等离子体处理装置包括：射频（RF）电源，用于将RF电力用于产生等离子体，所述等离子体被配置为在处理室中彼此相对设置的上电极和下电极中的至少一个;高压电源用于向下电极施加高电压以静电吸附待保持的衬底和用于控制RF电源和高压电源的控制单元。控制单元控制高压电源，以向下电极施加等于或小于-1500V的高电压。

5. 发明申请

US20080156441A1 PLASMA PROCESSING APPARATUS AND ELECTRODE PLATE, ELECTRODE SUPPORTING BODY, AND SHIELD RING THEREOF 审中-公开
标题翻译：等离子体处理装置和电极板，电极支撑体及其护环
公开(公告)号：US20080156441A1
公开(公告)日：2008-07-03
申请号：US12040523
申请日：2008-02-29
申请人： Masahiro Ogasawara , Kazuya Kato , Toshifumi Nagaiwa , Kosuke Imafuku , Koichi Kazama
发明人： Masahiro Ogasawara , Kazuya Kato , Toshifumi Nagaiwa , Kosuke Imafuku , Koichi Kazama
IPC分类号： H01L21/306
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/32532 , H01J37/32623 , H01L21/3065
摘要： In a plasma apparatus 1 for performing plasma processing on a substrate W to be processed, an upper electrode 21, which faces opposite a susceptor 5 which is a lower electrode, has an electrode supporting body 22 and an electrode plate 23. In the center on the side of the electrode supporting body at the boundary between the two, a hollow 62, the dimensions of which are determined such that a resonance is generated at a frequency of supplied high-frequency electric power and an electric field orthogonal to the electrode plate 23 is generated inside, is provided. Furthermore, a shield ring which surrounds the electrode plate 23 has a shape in which the lower surface is in the same level as the electrode plate 23, and it is made of a material that is not easily eroded by the plasma. By this, processing small features becomes possible with uniform distribution of plasma and in less degradation due to change over time.
摘要翻译：在用于对待处理的基板W进行等离子体处理的等离子体装置1中，与作为下部电极的基座5相对的上部电极21具有电极支撑体22和电极板23。在两个边界处的电极支撑体侧的中心处，确定空腔62的尺寸，使得在提供的高频电力的频率和正交于设置电极板23。此外，围绕电极板23的屏蔽环具有下表面与电极板23处于相同水平面的形状，并且其由不容易被等离子体侵蚀的材料制成。由此，通过等离子体的均匀分布和由于随时间的变化而降低的劣化，处理小特征成为可能。

6. 发明申请

US20080038673A1 METHOD FOR ADJUSTING A CRITICAL DIMENSION IN A HIGH ASPECT RATIO FEATURE 失效
标题翻译：用于调整高比例特征中的关键尺寸的方法
公开(公告)号：US20080038673A1
公开(公告)日：2008-02-14
申请号：US11463133
申请日：2006-08-08
申请人： Toshifumi Nagaiwa , Junichi Sasaki , Stefan Sawusch
发明人： Toshifumi Nagaiwa , Junichi Sasaki , Stefan Sawusch
IPC分类号： G03F7/26
CPC分类号： H01L21/31116 , H01L21/31122 , H01L21/31144
摘要： A method for adjusting the lateral critical dimension (i.e., length and width) of a feature formed in a layer on a substrate using a dry etching process. One or more thin intermediate sub-layers are inserted in the layer within which the feature is to be formed. Once an intermediate sub-layer is reached during the etching process, an etch process is performed to correct and/or adjust the lateral critical dimensions before etching through the intermediate sub-layer and continuing the layer etch.
摘要翻译：一种用于使用干蚀刻工艺调节在衬底上形成的特征的横向临界尺寸（即，长度和宽度）的方法。将一个或多个薄的中间子层插入其中要形成特征的层中。一旦在蚀刻过程中达到中间子层，则在蚀刻通过中间子层并继续层蚀刻之前，执行蚀刻工艺以校正和/或调整横向临界尺寸。

7. 发明授权

US06723202B2 Worktable device and plasma processing apparatus for semiconductor process 有权
标题翻译：用于半导体工艺的工作台装置和等离子体处理装置
公开(公告)号：US06723202B2
公开(公告)日：2004-04-20
申请号：US09840178
申请日：2001-04-24
申请人： Toshifumi Nagaiwa , Shuei Sekizawa , Kosuke Imafuku , Jun Ooyabu
发明人： Toshifumi Nagaiwa , Shuei Sekizawa , Kosuke Imafuku , Jun Ooyabu
IPC分类号： H01L213065
CPC分类号： H01L21/67103 , C23C16/4581 , C23C16/4586 , H01J37/32623 , H01J37/32642 , H01J2237/2001
摘要： A plasma etching apparatus includes a worktable disposed in a hermetic process chamber. The worktable has a main surface for placing a wafer thereon, and a sub-surface for placing a focus ring thereon. A cooling mechanism for supplying cold to the main surface and sub-surface is disposed in the worktable. A heat transfer medium made of conductive silicone rubber is interposed between the sub-surface and focus ring. A press mechanism presses the focus ring toward the sub-surface. The heat transfer medium improves thermal conductivity between the sub-surface and focus ring to be higher than in a case with no thermal transfer medium.
摘要翻译：等离子体蚀刻装置包括设置在密封处理室中的工作台。工作台具有用于在其上放置晶片的主表面和用于在其上放置聚焦环的子表面。用于向主表面和副表面供给冷的冷却机构设置在工作台中。由导电硅橡胶制成的传热介质插入在子表面和聚焦环之间。按压机构将聚焦环向下表面推压。传热介质提高了子表面和聚焦环之间的热导率，比没有热转印介质的情况要高。

8. 发明授权

US09059103B2 Processing method and storage medium 有权
标题翻译：加工方法和储存介质
公开(公告)号：US09059103B2
公开(公告)日：2015-06-16
申请号：US13428230
申请日：2012-03-23
申请人： Wataru Shimizu , Kiyoshi Maeda , Toshifumi Nagaiwa
发明人： Wataru Shimizu , Kiyoshi Maeda , Toshifumi Nagaiwa
IPC分类号： H01L21/31 , H01L21/3105 , H01L21/768 , H01L21/02 , H01L21/67
CPC分类号： H01L21/3105 , H01L21/02126 , H01L21/02203 , H01L21/02337 , H01L21/67109 , H01L21/76814 , H01L21/76826 , H01L21/76831
摘要： Disclosed is a processing method that removes moisture in a low permittivity film formed on a substrate to be processed which has a damaged layer on the surface thereof while maintaining the specific permittivity or a leakage current value low when the film is subjected to a recovery processing. The method for the recovery processing includes applying, on the damaged layer of the low permittivity film, a first processing gas whose molecules are small sufficient to permeate the inside of the damaged layer of the low permittivity film and which is able to remove the moisture in the damaged layer and a second processing gas which forms a hydrophobic dense reformatted layer on the surface of the damaged layer, thereby allowing the first processing gas and the second processing gas to react with the damaged layer.
摘要翻译：公开了一种处理方法，其在保持相对介电常数或当膜进行恢复处理时的漏电流值低的同时，除去在其表面上具有损伤层的被处理基板上形成的低介电常数膜中的水分。回收处理方法包括在低介电常数薄膜的损伤层上施加分子小到足以渗透低介电常数膜的损伤层的内部并能够除去低介电常数膜的水分的第一处理气体损伤层和在损伤层的表面上形成疏水性致密重整格层的第二处理气体，从而使第一处理气体和第二处理气体与损伤层反应。

9. 发明授权

US07732340B2 Method for adjusting a critical dimension in a high aspect ratio feature 失效
标题翻译：用于调整高宽高比特征中临界尺寸的方法
公开(公告)号：US07732340B2
公开(公告)日：2010-06-08
申请号：US11463133
申请日：2006-08-08
申请人： Toshifumi Nagaiwa , Junichi Sasaki , Stefan Sawusch
发明人： Toshifumi Nagaiwa , Junichi Sasaki , Stefan Sawusch
IPC分类号： H01I21/302
CPC分类号： H01L21/31116 , H01L21/31122 , H01L21/31144
摘要： A method for adjusting the lateral critical dimension (i.e., length and width) of a feature formed in a layer on a substrate using a dry etching process. One or more thin intermediate sub-layers are inserted in the layer within which the feature is to be formed. Once an intermediate sub-layer is reached during the etching process, an etch process is performed to correct and/or adjust the lateral critical dimensions before etching through the intermediate sub-layer and continuing the layer etch.
摘要翻译：一种用于使用干蚀刻工艺调节在衬底上形成的特征的横向临界尺寸（即，长度和宽度）的方法。将一个或多个薄的中间子层插入其中要形成特征的层中。一旦在蚀刻过程中达到中间子层，则在蚀刻通过中间子层并继续层蚀刻之前，执行蚀刻工艺以校正和/或调整横向临界尺寸。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式