会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Fuel cell cooling plate
    • 燃料电池冷却板
    • US4956245A
    • 1990-09-11
    • US300983
    • 1989-01-24
    • Hiroshi ShimizuTakashi HaradaKaoru KondohYoshiji Kobayashi
    • Hiroshi ShimizuTakashi HaradaKaoru KondohYoshiji Kobayashi
    • H01M8/02
    • H01M8/04074
    • There is disclosed a fuel cell cooling plate for eliminating waste heat generated by operation of a fuel cell. The cooling plate consists of an inner substrate layer composed of a soft, deformable plastic or low elastic carbonaceous material, sandwiched between outer substrate layers of a strong gas-impermeable carbonaceous material, and a sealing material. The inner substrate is chased with grooves, which house metal cooling pipes for passage of the cooling medium. The soft, deformable, plastic or low elastic material of the inner substrate can be formed so that the grooves fit tightly around the cooling pipes, preventing formation of any air gaps between the pipes and the grooves. This permits nearly complete circumferential contact between the pipes and the grooves, thereby reducing thermal resistance associated with air gaps, and maintaining a high degree of heat transfer. Further, the plastic or low elastic material of the inner substrate layer can conform to thermal expansion and contraction of the cooling plate and pipes, reducing excessive wear over the lifetime of the cooling plate.
    • 公开了一种用于消除由燃料电池的操作产生的废热的燃料电池冷却板。 冷却板包括由柔软的,可变形的塑料或低弹性碳质材料构成的内部基材层,夹在强气体不渗透的含碳材料的外部基材层之间和密封材料之间。 内部衬底被带有凹槽,该凹槽容纳用于冷却介质通过的金属冷却管。 可以形成内部基板的柔软的,可变形的,塑料的或低弹性的材料,使得凹槽紧密地配合在冷却管周围,防止在管道和槽之间形成任何气隙。 这允许管和槽之间几乎完全的圆周接触,从而降低与气隙相关联的热阻,并且保持高度的热传递。 此外,内基材层的塑料或低弹性材料可以符合冷却板和管道的热膨胀和收缩,从而减少冷却板寿命期间的过度磨损。
    • 2. 发明授权
    • Bipolar transistor and method of manufacturing the same
    • 双极晶体管及其制造方法
    • US4780427A
    • 1988-10-25
    • US104544
    • 1987-09-29
    • Tetsushi SakaiYoshiji Kobayashi
    • Tetsushi SakaiYoshiji Kobayashi
    • H01L29/73H01L21/033H01L21/225H01L21/331H01L23/532H01L29/417H01L29/732H01L29/70
    • H01L29/66272H01L21/033H01L21/2257H01L23/53271H01L29/41708H01L2924/0002
    • A bipolar transistor includes collector, base and emitter regions. The collector region consists of a first semiconductor region of a first conductivity type and formed in contact with a surface of a semiconductor layer. The base region consists of a second semiconductor region of a second conductivity type formed within the collector region to be in contact with the surface of the semiconductor layer. The emitter region consists of a third semiconductor region of the first conductivity type formed within the base region to be in contact with the surface of the semiconductor layer. The transistor also includes collector, base, and emitter electrodes. The collector and base electrodes are connected to the collector and base regions at opposite edges of a single opening formed in a field insulating film covering the surface of the semiconductor layer. The collector and base electrodes consist of a conductor. The emitter electrode is connected to the emitter region and consists of a conductor. The transistor further includes first and second insulating interlayers. The first insulating interlayer is formed between the collector and emitter electrodes. The second insulating interlayer is formed between the emitter and base electrodes. A distance between the collector and emitter electrodes on the surface of the semiconductor layer is substantially the same as that between the emitter and base electrodes.
    • 双极晶体管包括集电极,基极和发射极区域。 集电极区域由第一导电类型的第一半导体区域和半导体层的表面形成。 基极区域由形成在集电区域内的第二导电类型的第二半导体区域构成,以与半导体层的表面接触。 发射极区由第一导电类型的第三半导体区域形成在基极区内,以与半导体层的表面接触。 晶体管还包括集电极,基极和发射极。 集电体和基极电极在覆盖半导体层的表面的场绝缘膜中形成的单个开口的相对边缘处连接到集电极和基极区域。 集电极和基极由导体组成。 发射极电极连接到发射极区域,由导体组成。 晶体管还包括第一和第二绝缘夹层。 在集电极和发射极之间形成第一绝缘中间层。 第二绝缘中间层形成在发射极和基极之间。 半导体层表面上的集电极和发射极之间的距离基本上与发射极和基极之间的距离相同。
    • 3. 发明授权
    • Bipolar transistor and method of manufacturing the same
    • 双极晶体管及其制造方法
    • US5049964A
    • 1991-09-17
    • US498463
    • 1990-03-22
    • Tetsuchi SakaiYoshiji Kobayashi
    • Tetsuchi SakaiYoshiji Kobayashi
    • H01L21/033H01L21/225H01L21/331H01L23/532H01L29/417
    • H01L29/66272H01L21/033H01L21/2257H01L23/53271H01L29/41708H01L2924/0002
    • A bipolar transistor includes collector, base and emitter regions. The collector region consists of a first semiconductor region of a first conductivity type and formed in contact with a surface of a semiconductor layer. The base region consists of a second semiconductor region of a second conductivity type formed within the collector region to be in contact with the surface of the semiconductor layer. The emitter region consists of a third semiconductor region of the first conductivity type formed within the base region to be in contact with the surface of the semiconductor layer. The transistor also includes collector, base, and emitter electrodes. The collector and base electrodes are connected to the collector and base regions at opposite edges of a single opening formed in a field insulating film covering the surface of the semiconductor layer. The collector and base electrodes consist of a conductor. The emitter electrode is connected to the emitter region and consists of a conductor. The transistor further includes first and second insulating interlayers. The first insulating interlayer is formed between the collector and emitter electrodes. The second insulating interlayer is formed between the emitter and base electrodes. A distance between the collector and emitter electrodes on the surface of the semiconductor layer is substantially the same as that between the emitter and base electrodes.
    • 双极晶体管包括集电极,基极和发射极区域。 集电极区域由第一导电类型的第一半导体区域和半导体层的表面形成。 基极区域由形成在集电区域内的第二导电类型的第二半导体区域构成,以与半导体层的表面接触。 发射极区由第一导电类型的第三半导体区域形成在基极区内,以与半导体层的表面接触。 晶体管还包括集电极,基极和发射极。 集电体和基极电极在覆盖半导体层的表面的场绝缘膜中形成的单个开口的相对边缘处连接到集电极和基极区域。 集电极和基极由导体组成。 发射极电极连接到发射极区域,由导体组成。 晶体管还包括第一和第二绝缘夹层。 在集电极和发射极之间形成第一绝缘中间层。 第二绝缘中间层形成在发射极和基极之间。 半导体层表面上的集电极和发射极之间的距离基本上与发射极和基极之间的距离相同。
    • 4. 发明授权
    • Variable venturi type carburetor
    • 可变文丘里型化油器
    • US4559185A
    • 1985-12-17
    • US675444
    • 1984-11-27
    • Toshiaki SetoHideo YamamotoYoshiji Kobayashi
    • Toshiaki SetoHideo YamamotoYoshiji Kobayashi
    • F02M7/17F02M7/28F02M19/10F02M9/02
    • F02M7/17F02M19/10F02M7/28Y10S261/39Y10S261/56
    • A variable venturi type carburetor including both inner and outer venturis, a main nozzle for injecting main fuel into the inner venturi and a piston valve displaceably mounted on the outer venturi to move under the influence of negative pressure transmitted from the intake passage. The carburetor further includes an auxiliary fuel nozzle for feeding auxiliary fuel to the outer venturi in response to movement of the piston valve. The auxiliary fuel nozzle is disposed on the outer venturi adjacent to the main nozzle and the center axes of both the nozzles are located on the same or substantially same plane extending in the direction of the intake passage. A bleed air valve is mounted midway of the atmospheric pressure introduction passage which is branched from the auxiliary fuel passage so as to open the passage when higher negative pressure is transmitted from manifold. Further, a vacuum switching valve is mounted midway of the atmospheric pressure introduction passage extending from the negative pressure chamber on the valve piston so as to open the passage when higher negative pressure is transmitted from manifold. One end of each of the atmospheric pressure introduction passages for both the valves is opened to the atmosphere.
    • 包括内部和外部通气管的可变文丘里型化油器,用于将主燃料喷射到内文丘里管的主喷嘴和可移动地安装在外文丘里管上的活塞阀,以在从进气通道传递的负压的影响下移动。 化油器还包括用于响应于活塞阀的运动将辅助燃料供给到外文丘里管的辅助燃料喷嘴。 辅助燃料喷嘴设置在与主喷嘴相邻的外文丘里管上,两个喷嘴的中心轴线位于沿着进气通道的方向延伸的相同或基本相同的平面上。 排放空气阀安装在大气压力引入通道的中间,该通道从辅助燃料通道分支,以便在从歧管传递较高的负压时打开通道。 此外,真空切换阀安装在大气压引入通道的中间,从阀活塞上的负压室延伸,以便在从歧管传递更高的负压时打开通道。 用于两个阀的每个大气压力引入通道的一端向大气开放。