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    • 3. 发明授权
    • Flat display device
    • 平板显示设备
    • US07388325B2
    • 2008-06-17
    • US11552443
    • 2006-10-24
    • Yoshimitsu KatoSatoshi OkananKeiji HondaMasaru KokubukataHiroshi Sata
    • Yoshimitsu KatoSatoshi OkananKeiji HondaMasaru KokubukataHiroshi Sata
    • H01J63/04H01J1/62
    • H01J29/085H01J31/127
    • A flat-type display device is provided. The flat-type panel display includes a cathode panel having a plurality of electron emitter areas formed on a support; and an anode panel having formed on a substrate a plurality of fluorescent regions and an anode electrode covering at least the fluorescent regions, in which the cathode panel and the anode panel are joined together at their edges with a joint member in between. In the display device, the anode panel has formed on the anode electrode an electron absorbing layer for absorbing electrons from any one of the fluorescent regions and the anode electrode or both, and the anode panel has an adhesion improving layer formed between the anode electrode and the electron absorbing layer.
    • 提供了一种扁平型显示装置。 平面型面板显示器包括:阴极面板,其具有形成在支撑体上的多个电子发射区; 以及在基板上形成多个荧光区域的阳极面板和至少覆盖荧光区域的阳极电极,其中阴极面板和阳极面板在其边缘处以其间的接合构件接合在一起。 在显示装置中,阳极面板在阳极电极上形成有用于从荧光区域和阳极电极或两者中的任一个吸收电子的电子吸收层,并且阳极面板具有形成在阳极电极和 电子吸收层。
    • 5. 发明申请
    • REFRIGERATION APPARATUS AND REFRIGERATION CYCLE APPARATUS
    • 制冷装置和制冷循环装置
    • US20150052925A1
    • 2015-02-26
    • US14381642
    • 2012-03-30
    • Kenichi HataHiroshi Sata
    • Kenichi HataHiroshi Sata
    • F25B49/02F25B41/04F25B1/10
    • F25B49/022F25B1/10F25B41/04F25B2400/13F25B2600/0253F25B2600/0261F25B2600/027F25B2600/25Y02B30/741
    • A refrigeration apparatus includes a compressor receiving refrigerant through an injection pipe and of discharging the refrigerant, a condenser, an electronic expansion valve connected by piping to another end of the injection pipe, a subcooling coil, a solenoid valve configured to control inflowing of the refrigerant through the injection pipe into the compressor, an injection bypass pipe connecting the injection pipe and a pipe on a suction side of the compressor, a solenoid valve configured to control passage of the refrigerant flowing through the injection bypass pipe, a high-low pressure bypass pipe connecting a pipe on a discharge side of the compressor and the pipe on the suction side of the compressor, a solenoid valve configured to control passage of the refrigerant through the high-low pressure bypass pipe, and a controller configured to control a frequency of the compressor and opening and closing of each of the solenoid valves.
    • 一种制冷装置,包括:压缩机,其通过喷射管接收制冷剂,并且将制冷剂,冷凝器,通过管道连接的电子膨胀阀排出到所述喷射管的另一端;过冷线圈;配置成控制所述制冷剂的流入的电磁阀 通过喷射管进入压缩机,连接喷射管和压缩机吸入侧的管的喷射旁路管,构造成控制流过喷射旁通管的制冷剂通过的电磁阀,高低压旁路 连接压缩机的排出侧的管道和压缩机的吸入侧的配管,配置为控制制冷剂通过高低压旁通管的通路的电磁阀,以及控制器, 压缩机和每个电磁阀的打开和关闭。
    • 6. 发明授权
    • Method for producing via contacts in a semiconductor device
    • 用于在半导体器件中制造通孔触点的方法
    • US5963827A
    • 1999-10-05
    • US475762
    • 1995-06-07
    • Yoshiyuki EnomotoHiroshi Sata
    • Yoshiyuki EnomotoHiroshi Sata
    • H01L21/28H01L21/285H01L21/3205H01L21/768H01L23/52
    • H01L21/76843H01L21/76876H01L21/76877H01L21/28568
    • To provide a method for producing the semiconductor device in which contactability between a dielectric layer and a contact layer is not reduced during the formation of a metal plug, the method comprises forming a semiconductor device including a base; forming a lower conductive layer on the base; forming a dielectric layer formed on the lower conductive layer; forming an opening in the dielectric layer for electrically connecting the lower conductive layer with an upper conductive layer to be formed on the dielectric layer; forming a first contact layer formed on at least a bottom surface of the via hole and made of a single TiON layer, any portions of said first contact layer formed on the dielectric layer being removed; forming a second contact layer over an entire exposed surface of the first contact layer, depositing tungsten on the second contact layer by a chemical vapor deposition method; and removing portions of the second contact layer formed on the dielectric layer while leaving a tungsten plug and the first and second contact layers within the opening to form a via hole contact.
    • 为了提供一种制造在形成金属插塞期间电介质层和接触层之间的接触性不降低的半导体器件的方法,该方法包括形成包括基底的半导体器件; 在基底上形成下导电层; 形成在所述下导电层上形成的电介质层; 在所述电介质层中形成用于将所述下导电层与要形成在所述电介质层上的上导电层电连接的开口; 形成在所述通孔的至少底表面上并由单个TiON层形成的第一接触层,除去形成在所述介电层上的所述第一接触层的任何部分; 在所述第一接触层的整个暴露表面上形成第二接触层,通过化学气相沉积法在所述第二接触层上沉积钨; 以及去除形成在电介质层上的第二接触层的部分,同时留下钨丝塞,并且第一和第二接触层在开口内形成通孔接触。