会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明申请
    • Polishing fluid and polishing method
    • 抛光液和抛光方法
    • US20050181609A1
    • 2005-08-18
    • US10513002
    • 2003-04-28
    • Yasushi KurataKatsuyuki MasudaHiroshi OnoYasuo KamigataKazuhiro Enomoto
    • Yasushi KurataKatsuyuki MasudaHiroshi OnoYasuo KamigataKazuhiro Enomoto
    • B24B37/00C09G1/02C09G1/04H01L21/321H01L21/302H01L21/461
    • B24B37/0056B24B37/044C09G1/02C09G1/04C09K3/1463H01L21/3212
    • A polishing slurry including an oxidant, a metal oxide dissolver, a metal inhibitor and water and having a pH from 2 to 5. The metal oxide dissolver contains one or more types selected from one or more acids (A-group) selected from acids of which the dissociation constant (pKa) of a first dissociable acid group is less than 3.7 and from which five acids of lactic acid, phthalic acid, fumaric acid, maleic acid and aminoacetic acid are excluded, ammonium salts of the A-group and esters of the A-group, and one or more types selected from one or more acids (B-group) selected from acids of which the dissociation constant (pKa) of a first dissociable acid group is 3.7 or more and the five acids, ammonium salts of the B-group and esters of the B-group. The metal inhibitor contains one or more types selected from the group consisting of aromatic compounds having a triazole skeleton and one or more types selected from the group consisting of aliphatic compounds having a triazole skeleton and compounds having any one of pyrimidine skeleton, imidazole skeleton, guanidine skeleton, thiazole skeleton and pyrazole skeleton. The polishing slurry having a high metal-polishing rate, reducing etching rate and polishing friction, results in the production, with high productivity, of semiconductor devices reduced in dishing and erosion in metal wiring.
    • 包括氧化剂,金属氧化物溶解器,金属抑制剂和水并且pH为2至5的抛光浆料。金属氧化物溶解器含有一种或多种选自一种或多种选自以下的酸的一种(A-group)酸: 其中第一离解酸基团的解离常数(pKa)小于3.7,排除了乳酸,邻苯二甲酸,富马酸,马来酸和氨基乙酸的五种酸,A组的铵盐和 A组和选自一种或多种选自第一可解离酸基团的解离常数(pKa)为3.7以上的酸的酸(B组)和5种酸的一种或多种,​​以及五种酸的铵盐 B族的B族和酯类。 金属抑制剂含有选自具有三唑骨架的芳香族化合物和选自具有三唑骨架的脂肪族化合物和具有嘧啶骨架,咪唑骨架,胍等任意一种的化合物的一种或多种的一种或多种 骨架,噻唑骨架和吡唑骨架。 具有高金属抛光速率,降低蚀刻速率和抛光摩擦的抛光浆料导致半导体器件的高生产率的生产减少了金属布线中的凹陷和侵蚀。
    • 6. 发明授权
    • Polishing fluid and polishing method
    • 抛光液和抛光方法
    • US07367870B2
    • 2008-05-06
    • US10513002
    • 2003-04-28
    • Yasushi KurataKatsuyuki MasudaHiroshi OnoYasuo KamigataKazuhiro Enomoto
    • Yasushi KurataKatsuyuki MasudaHiroshi OnoYasuo KamigataKazuhiro Enomoto
    • C09K13/00
    • B24B37/0056B24B37/044C09G1/02C09G1/04C09K3/1463H01L21/3212
    • A polishing slurry including an oxidant, a metal oxide dissolver, a metal inhibitor and water and having a pH from 2 to 5. The metal oxide dissolver contains one or more compounds selected from one or more acids (A-group) selected from acids of which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is less than 3.7 and from which five acids of lactic acid, phthalic acid, fumaric acid, maleic acid and aminoacetic acid are excluded, ammonium salts of the A-group and esters of the A-group, and one or more compounds selected from one or more acids (B-group) selected from acids of which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is 3.7 or more and the five acids, ammonium salts of the B-group and esters of the B-group. The metal inhibitor contains one or more types selected from the group consisting of aromatic compounds having a triazole skeleton and one or more types selected from the group consisting of aliphatic compounds having a triazole skeleton and compounds having any one of pyrimidine skeleton, imidazole skeleton, guanidine skeleton, thiazole skeleton and pyrazole skeleton. The polishing slurry having a high metal-polishing rate, reducing etching rate and polishing friction, results in the production, with high productivity, of semiconductor devices reduced in dishing and erosion in metal wiring.
    • 包括氧化剂,金属氧化物溶解器,金属抑制剂和水并且pH为2至5的抛光浆料。金属氧化物溶解器含有一种或多种选自一种或多种选自以下的酸的化合物(A-group),所述酸选自: 其中第一离解酸基团的解离常数Ka(pKa)的对数的负值小于3.7,并且排除了乳酸,邻苯二甲酸,富马酸,马来酸和氨基乙酸的五种酸,铵盐 的A基团和A基团的酯,以及一种或多种选自一种或多种酸(B族)的化合物,所述酸选自其中解离常数Ka(pKa)的对数的负值为 第一离解酸基团为3.7以上,B族的5种酸,铵盐和B族的酯。 金属抑制剂含有选自具有三唑骨架的芳香族化合物和选自具有三唑骨架的脂肪族化合物和具有嘧啶骨架,咪唑骨架,胍等任意一种的化合物的一种或多种的一种或多种 骨架,噻唑骨架和吡唑骨架。 具有高金属抛光速率,降低蚀刻速率和抛光摩擦的抛光浆料导致半导体器件的高生产率的生产减少了金属布线中的凹陷和侵蚀。
    • 7. 发明申请
    • Polishing slurry and polishing method
    • 抛光浆和抛光方法
    • US20080003924A1
    • 2008-01-03
    • US11808047
    • 2007-06-06
    • Yasushi KurataKatsuyuki MasudaHiroshi OnoYasuo KamigataKazuhiro Enomoto
    • Yasushi KurataKatsuyuki MasudaHiroshi OnoYasuo KamigataKazuhiro Enomoto
    • B24B1/00C09G1/04
    • B24B37/0056B24B37/044C09G1/02C09G1/04C09K3/1463H01L21/3212
    • A polishing slurry including an oxidant, a metal oxide dissolver, a metal inhibitor and water and having a pH from 2 to 5. The metal oxide dissolver contains one or more compounds selected from one or more acids (A-group) selected from acids of which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is less than 3.7 and from which five acids of lactic acid, phthalic acid, fumaric acid, maleic acid and aminoacetic acid are excluded, ammonium salts of the A-group and esters of the A-group, and one or more compounds selected from one or more acids (B-group) selected from acids of which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is 3.7 or more and the five acids, ammonium salts of the B-group and esters of the B-group. The metal inhibitor contains one or more types selected from the group consisting of aromatic compounds having a triazole skeleton and one or more types selected from the group consisting of aliphatic compounds having a triazole skeleton and compounds having any one of pyrimidine skeleton, imidazole skeleton, guanidine skeleton, thiazole skeleton and pyrazole skeleton. The polishing slurry having a high metal-polishing rate, reducing etching rate and polishing friction, results in the production, with high productivity, of semiconductor devices reduced in dishing and erosion in metal wiring.
    • 包括氧化剂,金属氧化物溶解器,金属抑制剂和水并且pH为2至5的抛光浆料。金属氧化物溶解器含有一种或多种选自一种或多种选自以下的酸的化合物(A-group),所述酸选自: 其中第一离解酸基团的解离常数Ka(pKa)的对数的负值小于3.7,并且排除了乳酸,邻苯二甲酸,富马酸,马来酸和氨基乙酸的五种酸,铵盐 的A基团和A基团的酯,以及一种或多种选自一种或多种酸(B族)的化合物,所述酸选自其中解离常数Ka(pKa)的对数的负值为 第一离解酸基团为3.7以上,B族的5种酸,铵盐和B族的酯。 金属抑制剂含有选自具有三唑骨架的芳香族化合物和选自具有三唑骨架的脂肪族化合物和具有嘧啶骨架,咪唑骨架,胍等任意一种的化合物的一种或多种的一种或多种 骨架,噻唑骨架和吡唑骨架。 具有高金属抛光速率,降低蚀刻速率和抛光摩擦的抛光浆料导致半导体器件的高生产率的生产减少了金属布线中的凹陷和侵蚀。
    • 8. 发明申请
    • Polishing slurry and polishing method
    • 抛光浆和抛光方法
    • US20070295934A1
    • 2007-12-27
    • US11808038
    • 2007-06-06
    • Yasushi KurataKatsuyuki MasudaHiroshi OnoYasuo KamigataKazuhiro Enomoto
    • Yasushi KurataKatsuyuki MasudaHiroshi OnoYasuo KamigataKazuhiro Enomoto
    • C09K13/00
    • B24B37/0056B24B37/044C09G1/02C09G1/04C09K3/1463H01L21/3212
    • A polishing slurry including an oxidant, a metal oxide dissolver, a metal inhibitor and water and having a pH from 2 to 5. The metal oxide dissolver contains one or more compounds selected from one or more acids (A-group) selected from acids of which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is less than 3.7 and from which five acids of lactic acid, phthalic acid, fumaric acid, maleic acid and aminoacetic acid are excluded, ammonium salts of the A-group and esters of the A-group, and one or more compounds selected from one or more acids (B-group) selected from acids of which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is 3.7 or more and the five acids, ammonium salts of the B-group and esters of the B-group. The metal inhibitor contains one or more types selected from the group consisting of aromatic compounds having a triazole skeleton and one or more types selected from the group consisting of aliphatic compounds having a triazole skeleton and compounds having any one of pyrimidine skeleton, imidazole skeleton, guanidine skeleton, thiazole skeleton and pyrazole skeleton. The polishing slurry having a high metal-polishing rate, reducing etching rate and polishing friction, results in the production, with high productivity, of semiconductor devices reduced in dishing and erosion in metal wiring.
    • 包括氧化剂,金属氧化物溶解器,金属抑制剂和水并且pH为2至5的抛光浆料。金属氧化物溶解器含有一种或多种选自一种或多种选自以下的酸的化合物(A-group),所述酸选自: 其中第一离解酸基团的解离常数Ka(pKa)的对数的负值小于3.7,并且排除了乳酸,邻苯二甲酸,富马酸,马来酸和氨基乙酸的五种酸,铵盐 的A基团和A基团的酯,以及一种或多种选自一种或多种酸(B族)的化合物,所述酸选自其中解离常数Ka(pKa)的对数的负值为 第一离解酸基团为3.7以上,B族的5种酸,铵盐和B族的酯。 金属抑制剂含有选自具有三唑骨架的芳香族化合物和选自具有三唑骨架的脂肪族化合物和具有嘧啶骨架,咪唑骨架,胍等任意一种的化合物的一种或多种的一种或多种 骨架,噻唑骨架和吡唑骨架。 具有高金属抛光速率,降低蚀刻速率和抛光摩擦的抛光浆料导致半导体器件的高生产率的生产减少了金属布线中的凹陷和侵蚀。
    • 9. 发明授权
    • Silicon-containing alicyclic polyimide resin, polyamic acid resin, and manufacturing method for same
    • 含硅脂环族聚酰亚胺树脂,聚酰胺酸树脂及其制造方法
    • US08592546B2
    • 2013-11-26
    • US13583727
    • 2011-04-13
    • Tooru KikuchiToshihiko TakasakiKatsuyuki Masuda
    • Tooru KikuchiToshihiko TakasakiKatsuyuki Masuda
    • C08G77/452
    • C08G73/106C08G69/42C08G73/105C08G73/1075C08G73/1078C08G77/455
    • A polyimide resin including repeating units represented by formula (1): wherein R is a diamine residue or a diisocyanate residue; m is an integer of 2 to 30; any of silicon atoms bonded to norbornane rings is in exo configuration with respect to the norbornane rings; and any of imide rings bonded to the norbornane rings is in exo configuration with respect to the norbornane rings, and a polyamic acid resin including repeating units represented by formula (2): wherein R is a diamine residue; m is an integer of 2 to 30; any of silicon atoms bonded to norbornane rings is in exo configuration with respect to the norbornane rings; and any of amide groups and carboxyl groups bonded to the norbornane rings is in exo configuration with respect to the norbornane rings. The polyimide resin is soluble in general-purpose solvents, has a good transparency and a high molecular weight, and is excellent in mechanical properties, such as tensile strength and elongation.
    • 包含由式(1)表示的重复单元的聚酰亚胺树脂:其中R是二胺残基或二异氰酸酯残基; m为2〜30的整数, 与降冰片烷环结合的任何硅原子相对于降冰片烷环都处于外部构型; 并且与降冰片烷环结合的任何酰亚胺环相对于降冰片烷环为外部构型,和包含由式(2)表示的重复单元的聚酰胺酸树脂:其中R是二胺残基; m为2〜30的整数, 与降冰片烷环结合的任何硅原子相对于降冰片烷环都处于外部构型; 与降冰片烷环结合的酰胺基和羧基中的任何一个相对于降冰片烷环都处于外部构型。 聚酰亚胺树脂可溶于通用溶剂,透明度高,分子量高,机械性能优异,拉伸强度和伸长率优异。