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1. 发明授权

US5496688A Base film for photographic film 失效
标题翻译：摄影胶片底片
公开(公告)号：US5496688A
公开(公告)日：1996-03-05
申请号：US318712
申请日：1994-10-12
申请人： Hiroshi Okamoto , Kohtaro Katoh , Hiroshi Tomita , Kenji Suzuki , Kazuyoshi Saitoh
发明人： Hiroshi Okamoto , Kohtaro Katoh , Hiroshi Tomita , Kenji Suzuki , Kazuyoshi Saitoh
IPC分类号： G03C1/795 , G03C1/81 , G03C3/02
CPC分类号： G03C1/7954 , G03C1/795 , G03C2200/10 , Y10S428/913 , Y10T428/24372 , Y10T428/2495 , Y10T428/31786
摘要： A base film for a photographic film, wherein (a) the refractive index (nz) in the thickness direction is at least 1.498, (b) the haze value is 2.0% or less, (c) the base film has one direction in which the tan.delta. value, at 80.degree. C. by tensile viscoelasticity at 0.05 Hz, is 0.09 or less, (d) the anti-curling ratio at 70.degree. C. is at least 45%, (e) the thickness is in the range of from 40 to 120 .mu.m, and (f) the base film is formed from polyethylene-2,6-naphthalendedicarboxylate as a substantial raw material. This base film has various performances such as anti-curling properties, transparency and lubricity, suitable for use in a photographic film.
摘要翻译： PCT No.PCT / JP94 / 00181 Sec。 371日期：1994年10月12日 102（e）日期1994年10月12日PCT 1994年2月7日提交PCT公布。第WO94 / 19722号公报日本1994年9月1日。照相胶片用基膜，其中，（a）厚度方向的折射率（nz）为1.498以上，（b）雾度值为2.0％以下，（c）基膜的一个方向是在0.05℃下通过拉伸粘弹性在80℃下的tanδ值为0.09以下，（d）70℃下的抗翘曲比例至少为45％，（e ），厚度在40〜120μm的范围内，（f）由聚2,6-萘二甲酸乙二醇酯作为基本原料形成基膜。该基膜具有各种性能，如抗卷曲性，透明性和润滑性，适用于摄影胶片。

2. 发明授权

US5085933A Film for use as thermosensitive stencil printing cardboard sheet 失效
标题翻译：用作热敏蜡纸印刷纸板的胶片
公开(公告)号：US5085933A
公开(公告)日：1992-02-04
申请号：US549061
申请日：1990-07-06
申请人： Kotaro Katoh , Hiroshi Tomita , Kazuyoshi Saitoh
发明人： Kotaro Katoh , Hiroshi Tomita , Kazuyoshi Saitoh
IPC分类号： B41N1/24
CPC分类号： B41N1/245 , Y10S428/913 , Y10T428/26 , Y10T428/266 , Y10T428/31 , Y10T428/31786 , Y10T428/31855
摘要： A film for a thermosensitive stencil printing base sheet, comprising a biaxially stretched film of a thermoplastic resin having a thickness of 0.2 to 7 micrometers, said film showing at least two fusion peaks in its DSC temperature elevation measuring chart (the rate of temperature elevation 20.degree. C./min.), at least two fusion peaks having the following relation:T.sub.mp (max).ltoreq.260(.degree.C.)T.sub.mp (min).gtoreq.90(.degree.C.).DELTA.T.sub.mp .gtoreq.10(.degree.C.)5(cal/g).ltoreq..DELTA.Hu(total).ltoreq.13(cal/g)0.05.ltoreq..DELTA.Hu(min)/.DELTA.Hu(total).ltoreq.0.9whereinT.sub.mp (max) is the temperature (.degree.C.) of the fusion temperature on the highest temperature side,T.sub.mp (min) is the temperature (.degree.C.) of fusion peak on the lowest temperature side,.DELTA.T.sub.mp is T.sub.mp (max)-T.sub.mp (min),.DELTA.Hu(total) is the total fusion energy (cal/g), and.DELTA.Hu(min) is the fusion energy (cal/g) of the fusion peak on the lowest temperature side.
摘要翻译：一种用于热敏模版印刷基片的薄膜，包括厚度为0.2至7微米的热塑性树脂的双轴拉伸薄膜，所述薄膜在其DSC温度升高测量图（温度升高速率20 至少两个具有以下关系的熔融峰：Tmp（max） / = 90（℃）DELTA Tmp> / = 10 （℃）5（cal / g）= /△=（总计）= 13（cal / g）0.05胡椒（分钟）/ DELTA胡（总计） max）是最高温度侧融合温度的温度（℃），Tmp（min）是最低温度侧融合峰的温度（℃），DELTA Tmpis Tmp（max）-Tmp min），DELTA Hu（total）是总融合能（cal / g），DELTA Hu（min）是最低温度侧融合峰的融合能（cal / g）。

3. 发明授权

US06180254B2 Biaxially oriented film and magnetic recording medium comprising the same as a base film 失效
标题翻译：包含与基膜相同的双轴取向膜和磁记录介质
公开(公告)号：US06180254B2
公开(公告)日：2001-01-30
申请号：US09179428
申请日：1998-10-27
申请人： Makoto Handa , Mitsumasa Ono , Takeo Asai , Hiroshi Tomita , Kenji Suzuki
发明人： Makoto Handa , Mitsumasa Ono , Takeo Asai , Hiroshi Tomita , Kenji Suzuki
IPC分类号： G11B566
CPC分类号： C08K3/22 , C08J5/18 , C08J2377/00 , C08K3/26 , G11B5/733 , Y10S428/90 , Y10T428/31725 , C08L77/00
摘要： A biaxially oriented film made from a wholly aromatic polyamide produced by an acid chloride process, which contains at least one member of inorganic particles having an average particle diameter of 5 to 2,000 nm and selected from the group consisting of hydroxides, carbonates and bicarbonates of metals of groups Ia and IIa of the periodic table. The inorganic particles is derived from inorganic particles which are added as a neutralizing agent to a reaction system to neutralize hydrogen chloride by-produced by the acid chloride reaction and its content corresponds to an excess portion added to the reaction system over the amount required for neutralizing the hydrogen chloride stoichiometrically. The film is useful as a base film for a magnetic recording medium, such as a coated, a multi-layer coated, or a thin metal film high-density magnetic recording medium.
摘要翻译：由通过酰氯制造的全芳族聚酰胺制成的双轴取向膜，其含有至少一种平均粒径为5至2,000nm的无机颗粒，并且选自金属的氢氧化物，碳酸盐和碳酸氢盐的周期表的Ia和IIa族。无机颗粒源自作为中和剂加入到反应体系中的中和无机颗粒，以中和氯化反应产生的氯化氢，其含量相当于反应体系中过量的中和量所需的量化学计量的氯化氢。该膜可用作磁记录介质的基膜，例如涂覆的，多层涂覆的或薄的金属膜高密度磁记录介质。

4. 发明授权

US10199240B2 Substrate processing method, substrate processing apparatus, and storage medium 有权
公开(公告)号：US10199240B2
公开(公告)日：2019-02-05
申请号：US13482318
申请日：2012-05-29
申请人： Hidekazu Hayashi , Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Kazuyuki Mitsuoka , Mitsuaki Iwashita , Takehiko Orii , Gen You , Hiroki Ohno , Takayuki Toshima
发明人： Hidekazu Hayashi , Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Kazuyuki Mitsuoka , Mitsuaki Iwashita , Takehiko Orii , Gen You , Hiroki Ohno , Takayuki Toshima
IPC分类号： H01L21/67 , H01L21/02 , B08B7/00
摘要： A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container.

5. 发明授权

US09126229B2 Deposit removal method 有权
标题翻译：存款清除方法
公开(公告)号：US09126229B2
公开(公告)日：2015-09-08
申请号：US14116952
申请日：2012-05-10
申请人： Shigeru Tahara , Eiichi Nishimura , Hiroshi Tomita , Tokuhisa Ohiwa , Hisashi Okuchi , Mitsuhiro Omura
发明人： Shigeru Tahara , Eiichi Nishimura , Hiroshi Tomita , Tokuhisa Ohiwa , Hisashi Okuchi , Mitsuhiro Omura
IPC分类号： B05D3/14 , H01L21/02 , H01L21/311
CPC分类号： B05D3/145 , H01L21/02057 , H01L21/02063 , H01L21/31116
摘要： A deposit removal method for removing deposits deposited on the surface of a pattern formed on a substrate by etching, includes an oxygen plasma treatment process for exposing the substrate to oxygen plasma while heating the substrate and a cycle treatment process for, after the oxygen plasma treatment process, repeating multiple cycles of a first period and a second period. In the first period, the substrate is exposed to a mixture of hydrogen fluoride gas and alcohol gas inside a processing chamber and the partial pressure of the alcohol gas is set to the first partial pressure. In the second period, the partial pressure of the alcohol gas is set to the second partial pressure lower than the first partial pressure by exhausting the inside of the processing chamber.
摘要翻译：通过蚀刻去除沉积在形成在基板上的图案的表面上的沉积物的沉积物去除方法包括用于在加热基板的同时将基板暴露于氧等离子体的氧等离子体处理工艺和在氧等离子体处理之后的循环处理处理，重复第一周期和第二周期的多个周期。在第一阶段中，将基板暴露于处理室内的氟化氢气体和醇气体的混合物，并将醇气体的分压设定为第一分压。在第二时段，通过排出处理室的内部，将醇气体的分压设定为低于第一分压的第二分压。

6. 发明授权

US08772164B2 Method for forming interconnection pattern and semiconductor device 有权
标题翻译：形成互连图案和半导体器件的方法
公开(公告)号：US08772164B2
公开(公告)日：2014-07-08
申请号：US13526216
申请日：2012-06-18
申请人： Yasuhito Yoshimizu , Satoshi Wakatsuki , Hisashi Okuchi , Atsuko Sakata , Hiroshi Tomita
发明人： Yasuhito Yoshimizu , Satoshi Wakatsuki , Hisashi Okuchi , Atsuko Sakata , Hiroshi Tomita
IPC分类号： H01L21/44
CPC分类号： C23C18/1608 , C23C18/1893 , C23C18/32 , H01L21/4846 , H01L21/76874 , H01L21/76879 , H01L21/76885 , H01L28/91
摘要： According to one embodiment, a method for forming an interconnection pattern includes forming an insulating pattern, forming a self-assembled film, and forming a conductive layer. The insulating pattern has a side surface on a major surface of a matrix. The self-assembled film has an affinity with a material of the insulating pattern on the side surface of the insulating pattern. The forming the conductive layer includes depositing a conductive material on a side surface of the self-assembled film.
摘要翻译：根据一个实施例，用于形成互连图案的方法包括形成绝缘图案，形成自组装膜并形成导电层。绝缘图案在矩阵的主表面上具有侧表面。自组装膜与绝缘图案的侧面上的绝缘图案的材料具有亲和性。形成导电层包括在自组装膜的侧表面上沉积导电材料。

7. 发明授权

US08375964B2 Template cleaning method, system, and apparatus 有权
标题翻译：模板清洗方法，系统和装置
公开(公告)号：US08375964B2
公开(公告)日：2013-02-19
申请号：US12560210
申请日：2009-09-15
申请人： Hiroshi Tomita , Hisashi Okuchi , Minako Inukai
发明人： Hiroshi Tomita , Hisashi Okuchi , Minako Inukai
IPC分类号： B08B3/02
CPC分类号： B08B3/08 , B08B13/00 , H01L21/67051 , H01L21/67748 , H01L21/68707 , H01L21/68728
摘要： A template cleaning method for cleaning a template for nanoimprint, according to an embodiment of the present invention includes placing a wafer on a stage provided in a chamber, cleaning the wafer placed on the stage, inspecting the wafer for particles after the cleaning of the wafer, placing the template on the stage after the inspection of the wafer, and cleaning the template placed on the stage.
摘要翻译：根据本发明的实施例的用于清洁纳米压印模板的模板清洁方法包括将晶片放置在设置在室中的台上，清洁放置在台上的晶片，在晶片清洁之后检查晶片的颗粒，在检查晶片后将模板放置在平台上，并清洁放置在平台上的模板。

8. 发明申请

US20130019905A1 SUPERCRITICAL DRYING METHOD FOR SEMICONDUCTOR SUBSTRATE AND SUPERCRITICAL DRYING APPARATUS 有权
标题翻译：半导体基板和超临界干燥装置的超临界干燥方法
公开(公告)号：US20130019905A1
公开(公告)日：2013-01-24
申请号：US13420870
申请日：2012-03-15
申请人： Linan JI , Hidekazu Hayashi , Hiroshi Tomita , Hisashi Okuchi , Yohei Sato , Takayuki Toshima , Mitsuaki Iwashita , Kazuyuki Mitsuoka , Gen You , Hiroki Ohno , Takehiko Orii
发明人： Linan JI , Hidekazu Hayashi , Hiroshi Tomita , Hisashi Okuchi , Yohei Sato , Takayuki Toshima , Mitsuaki Iwashita , Kazuyuki Mitsuoka , Gen You , Hiroki Ohno , Takehiko Orii
IPC分类号： B08B3/10 , F26B3/00
CPC分类号： H01L21/02 , F26B21/10 , F26B21/14 , F26B23/028 , F26B2200/04 , H01L21/02052 , H01L21/02057 , H01L21/02101 , H01L21/67034
摘要： According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.
摘要翻译：根据一个实施方案，一种用于半导体衬底的超临界干燥方法包括将半导体衬底以一种状态将半导体衬底引入室中，该半导体衬底的表面被醇润湿，用半导体衬底上的醇代替超临界流体碳通过将半导体衬底浸渍到腔室中的超临界流体中，并且将超临界流体和醇从腔室排出并且减小腔室内的压力，从而将二氧化碳稀释。该方法还包括在减小室内的压力之后，通过向室内供应氧气或臭氧气体进行烘烤处理。

9. 发明申请

US20120304485A1 SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND STORAGE MEDIUM 审中-公开
标题翻译：基板处理方法，基板处理装置和存储介质
公开(公告)号：US20120304485A1
公开(公告)日：2012-12-06
申请号：US13482318
申请日：2012-05-29
申请人： Hidekazu Hayashi , Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Kazuyuki Mitsuoka , Mitsuaki Iwashita , Takehiko Orii , Gen You , Hiroki Ohno , Takayuki Toshima
发明人： Hidekazu Hayashi , Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Kazuyuki Mitsuoka , Mitsuaki Iwashita , Takehiko Orii , Gen You , Hiroki Ohno , Takayuki Toshima
IPC分类号： F26B7/00
CPC分类号： H01L21/67028 , B08B7/0021 , H01L21/02057 , H01L21/02101
摘要： A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container.
摘要翻译：一种基板处理方法和装置，其能够在相当短的时间内去除已经进入具有形成在基板中的凹部的三维图案的抗干燥液体。基板处理方法包括以下步骤：将具有形成在表面上的三维图案的基板运送到处理容器中，所述图案被已经进入图案的凹部的防干燥液体覆盖; 加热基板并将高压状态的加压气体或流体供给到处理容器中，从而在防干燥液体蒸发之前在处理容器中形成高压气氛，使其形成图案塌陷，将防干燥液体保持在高压状态，同时将液体保持在图案的凹部中; 然后从处理容器中排出处于高压状态或气态的流体。

10. 发明申请

US20120240426A1 SUPERCRITICAL DRYING METHOD FOR SEMICONDUCTOR SUBSTRATE 有权
标题翻译：用于半导体基板的超临界干燥方法
公开(公告)号：US20120240426A1
公开(公告)日：2012-09-27
申请号：US13231956
申请日：2011-09-13
申请人： Hidekazu HAYASHI , Hiroshi Tomita , Yukiko Kitajima , Hisashi Okuchi , Yohei Sato
发明人： Hidekazu HAYASHI , Hiroshi Tomita , Yukiko Kitajima , Hisashi Okuchi , Yohei Sato
IPC分类号： F26B7/00 , F26B21/14
CPC分类号： H01L21/02101 , H01L21/02068 , H01L21/67017 , H01L21/67034
摘要： According to one embodiment, a supercritical drying method for a semiconductor substrate includes introducing a semiconductor substrate formed with a metal film into a chamber, the surface of the substrate being wet with alcohol, supplying a supercritical fluid of carbon dioxide into the chamber, setting a temperature inside the chamber to a predetermined temperature, to replace the alcohol on the semiconductor substrate with the supercritical fluid, and discharging the supercritical fluid and the alcohol from the chamber while keeping the temperature inside the chamber at the predetermined temperature, to lower a pressure inside the chamber. The predetermined temperature is not lower than 75° C. but lower than a critical temperature of the alcohol.
摘要翻译：根据一个实施例，半导体衬底的超临界干燥方法包括将形成有金属膜的半导体衬底引入腔室中，基底表面被醇润湿，将二氧化碳的超临界流体供应到腔室中，在室内温度达到预定温度，用超临界流体替代半导体衬底上的醇，并且将超临界流体和醇从室中排出，同时将室内的温度保持在预定温度，以降低内部的压力房间。预定温度不低于75℃，但低于醇的临界温度。

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