专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06450181B1 Cleaning solution for electronic materials and method for using same 有权
公开(公告)号：US06450181B1
公开(公告)日：2002-09-17
申请号：US09542305
申请日：2000-04-04
申请人： Hiroshi Morita , Tetsuo Mizuniwa , Junichi Ida
发明人： Hiroshi Morita , Tetsuo Mizuniwa , Junichi Ida
IPC分类号： H01L21306
CPC分类号： H01L21/02052 , C11D3/0042 , C11D3/3947 , C11D7/06 , C11D11/0047 , H05K3/26 , H05K2201/0761 , H05K2203/0793 , H05K2203/0796
摘要： A cleaning solution for electronic materials contains dissolved oxygen gas at a concentration greater than atmospheric saturation concentration, 0.1-10,000 mg/liter of ammonia, and 0.1-10,000 mg/liter of hydrogen peroxide in water. Alternatively, the cleaning solution contains dissolved reducing agents, 0.1-10,000 mg/liter of ammonia, and 0.1-10,000 mg/liter of hydrogen peroxide in water. A method for making the cleaning solution of the present invention is provided. A method for cleaning electronic materials using the cleaning solution of the present invention is also provided.

2. 发明授权

US06372699B1 Cleaning solution for electronic materials and method for using same 有权
标题翻译：电子材料清洗液及其使用方法
公开(公告)号：US06372699B1
公开(公告)日：2002-04-16
申请号：US09215872
申请日：1998-12-18
申请人： Hiroshi Morita , Tetsuo Mizuniwa , Junichi Ida
发明人： Hiroshi Morita , Tetsuo Mizuniwa , Junichi Ida
IPC分类号： C11D1310
CPC分类号： H01L21/02052 , C11D3/0042 , C11D3/3947 , C11D7/06 , C11D11/0047 , H05K3/26 , H05K2201/0761 , H05K2203/0793 , H05K2203/0796
摘要： A cleaning solution for electronic materials contains dissolved oxygen gas at a concentration greater than atmospheric saturation concentration, 0.1-10,000 mg/liter of ammonia, and 0.1-10,000 mg/liter of hydrogen peroxide in water. Alternatively, the cleaning solution contains dissolved reducing agents, 0.1-10,000 mg/liter of ammonia, and 0.1-10,000 mg/liter of hydrogen peroxide in water. A method for making the cleaning solution of the present invention is provided. A method for cleaning electronic materials using the cleaning solution of the present invention is also provided.
摘要翻译：用于电子材料的清洁溶液含有浓度大于大气饱和浓度的溶解氧气，0.1-10,000mg /升氨和0.1-10,000mg /升过氧化氢水溶液。或者，清洁溶液含有溶解的还原剂，0.1-10,000mg /升氨和0.1-10,000mg /升过氧化氢在水中。提供了制造本发明的清洗溶液的方法。还提供了使用本发明的清洁溶液清洁电子材料的方法。

3. 发明授权

US06409918B1 Apparatus for supplying ozonated ultrapure water 有权
标题翻译：用于提供臭氧超纯水的设备
公开(公告)号：US06409918B1
公开(公告)日：2002-06-25
申请号：US09185836
申请日：1998-11-04
申请人： Hiroshi Morita , Tetsuo Mizuniwa , Junichi Ida
发明人： Hiroshi Morita , Tetsuo Mizuniwa , Junichi Ida
IPC分类号： C02F178
CPC分类号： C02F1/78 , C02F2103/04 , Y10S210/90
摘要： An ozonated ultrapure water supply system that prevents reduction of the dissolved ozone concentration in the supply pipe system and maintains the dissolved ozone at points of use along the supply system at desired concentrations. This permits the system to supply ozonated water in long pipes. The system includes a sequential arrangement of a circulatory main pipe 3 for supplying ultrapure water, an ozonated gas supplying device 4, and at least two output branch lines 8 each having a gas/liquid separation device 9 and an ultimate point of use 7. The output branch lines are spaced downstream from the ozonated gas supplying device such that the ozone concentration in the ultrapure water has increased to a stable level and the ozonated ultrapure water at each output branch line is at this same stable ozone concentration.
摘要翻译：一种臭氧化的超纯水供应系统，其防止降低供应管系统中的溶解臭氧浓度，并在所需浓度下沿供应系统的使用点维持溶解的臭氧。这允许系统在长管道中提供臭氧水。该系统包括用于提供超纯水的循环主管3，臭氧化气体供应装置4和至少两个输出分支管线8的顺序排列，每个输出分支管线8具有气/液分离装置9和最终使用点7。输出分支管线与臭氧化气体供给装置的下游隔开，使得超纯水中的臭氧浓度增加到稳定水平，并且每个输出分支管线处的臭氧化超纯水处于相同的稳定的臭氧浓度。

4. 发明授权

US06346505B1 Cleaning solution for electromaterials and method for using same 有权
标题翻译：电子材料清洗液及其使用方法
公开(公告)号：US06346505B1
公开(公告)日：2002-02-12
申请号：US09229877
申请日：1999-01-14
申请人： Hiroshi Morita , Tetsuo Mizuniwa , Junichi Ida
发明人： Hiroshi Morita , Tetsuo Mizuniwa , Junichi Ida
IPC分类号： H01L21306
CPC分类号： C11D3/3947 , C11D7/08 , C11D11/0047 , H05K3/26
摘要： A cleaning solution for electromaterials including hydrogen fluoride and either oxygen or hydrogen gas dissolved in water. The cleaning solution may alternatively include hydrogen fluoride, hydrochloric acid or nitric acid, and hydrogen or oxygen gas dissolved in water. Alternatively, the cleaning solution includes hydrogen fluoride, hydrogen peroxide and oxygen gas dissolved in water. The present invention also provides a method for cleaning electromaterials including applying an ultrasonic vibration to cleaning solution applied to electromaterials.
摘要翻译：用于包括氟化氢和溶解在水中的氧气或氢气的电子材料的清洁溶液。清洁溶液可以替代地包括氟化氢，盐酸或硝酸，以及溶解在水中的氢或氧气。或者，清洁溶液包括溶解在水中的氟化氢，过氧化氢和氧气。本发明还提供了一种清洁电子材料的方法，包括对施加到电子材料上的清洁溶液施加超声波振动。

5. 发明授权

US06464867B1 Apparatus for producing water containing dissolved ozone 有权
标题翻译：用于生产含有溶解臭氧的水的装置
公开(公告)号：US06464867B1
公开(公告)日：2002-10-15
申请号：US09958890
申请日：2001-10-12
申请人： Hiroshi Morita , Osamu Ota , Tetsuo Mizuniwa , Kazumi Tsukamoto
发明人： Hiroshi Morita , Osamu Ota , Tetsuo Mizuniwa , Kazumi Tsukamoto
IPC分类号： C02F178
CPC分类号： C02F1/78 , B01F3/04099 , B01F3/04985 , B01F2003/04886 , C01B13/10 , C02F1/32 , C02F1/44 , C02F1/68 , C02F1/725 , C02F2103/04 , C02F2103/12 , C02F2201/782 , Y10S210/90
摘要： An apparatus for producing water containing dissolved ozone which comprises (A) a piping for supplying ultrapure water through which ultrapure water is supplied, (B) a catalytic reaction portion which is connected with the piping for supplying ultrapure water and in which the ultrapure water is brought into contact with an oxidation-reduction catalyst, (C) a filtration apparatus by which the ultrapure water treated in the catalytic reaction portion is filtered and (D) an apparatus for dissolving ozone in which ozone is dissolved into the ultrapure water discharged from the filtration apparatus; and an apparatus for producing water containing dissolved ozone which comprises an apparatus for producing ultrapure water which is equipped with an apparatus for irradiating with ultraviolet light, an apparatus for dissolving ozone in which ozone is dissolved into the ultrapure water produced in the apparatus for producing ultrapure water and a catalytic reaction portion which is packed with an oxidation-reduction catalyst and disposed between the apparatus for irradiating with ultraviolet light and the apparatus for dissolving ozone. Substances promoting decomposition of ozone which are contained in ultrapure water in very small amounts are removed and water containing dissolved ozone which shows little decrease in the concentration of ozone and has a great residual fraction of ozone dissolved in water after transportation for a long distance can be obtained.
摘要翻译：一种含有溶解臭氧的水的制造装置，其特征在于，包括：（A）供给超纯水的超纯水的配管，（B）与供给超纯水的管道连接的催化反应部，超纯水与氧化还原催化剂接触，（C）将在催化反应部分处理的超纯水过滤的过滤装置和（D）将臭氧溶解在臭氧中的臭氧溶解装置（D）过滤装置; 以及含有溶解臭氧的水的制造装置，其特征在于，包括：设置有紫外线照射装置的超纯水的制造装置，将臭氧溶解在超纯水装置中生成的超纯水中的臭氧溶解装置水和催化反应部分，其被填充有氧化还原催化剂并且设置在用于照射紫外线的装置和用于溶解臭氧的装置之间。可以除去非常少量促进超纯水中包含的臭氧分解的物质，并且在长距离运输后，溶解臭氧浓度几乎不降低，臭氧溶解在水中的溶解臭氧的含有溶解臭氧的水可以是获得。

6. 发明申请

US20120172273A1 WAFER WASHING WATER AND WAFER WASHING METHOD 审中-公开
标题翻译： WAFER洗衣水和WAFER洗衣方法
公开(公告)号：US20120172273A1
公开(公告)日：2012-07-05
申请号：US13496366
申请日：2010-09-28
申请人： Tetsuo Mizuniwa , Shigeyuki Hoshi
发明人： Tetsuo Mizuniwa , Shigeyuki Hoshi
IPC分类号： C11D7/60
CPC分类号： H01L21/02052
摘要： The invention provides a wafer washing technique which does not require complicated operations and by which a wafer is washed with ultrapure water through relatively simple operations without contaminating the wafer surface with metals even if the ultrapure water contains metal ions on the ng/L (ppt) level. Wafer washing water includes ultrapure water to which a substance having an affinity for metal ions has been added. A wafer washing method uses this wafer washing water. A substance that exhibits an affinity for metal ions is added beforehand to wafer washing ultrapure water. As a result, the substance captures metal ions present in the ultrapure water and stabilizes them in water, thereby effectively preventing the metal ions from migrating toward the wafer surface and becoming attached to the wafer surface during washing.
摘要翻译：本发明提供一种不需要复杂操作的晶片清洗技术，即使超纯水在ng / L（ppt）上含有金属离子，通过相对简单的操作也可以用超纯水洗涤晶片，而不会金属污染晶片表面，水平。晶片洗涤水包括已经添加了对金属离子具有亲和性的物质的超纯水。晶圆洗涤方法使用该晶片洗涤水。向金属离子表现出亲和性的物质预先加入到晶圆洗涤超纯水中。结果，该物质捕获超纯水中存在的金属离子并将其稳定在水中，从而有效地防止金属离子向晶片表面迁移并在洗涤期间附着于晶片表面。

7. 发明授权

US5814157A Method for cleaning a semiconductor wafer with an improved cleaning solution 失效
标题翻译：用改进的清洗液清洗半导体晶片的方法
公开(公告)号：US5814157A
公开(公告)日：1998-09-29
申请号：US645812
申请日：1996-05-14
申请人： Tetsuo Mizuniwa , Yoshimi Shiramizu
发明人： Tetsuo Mizuniwa , Yoshimi Shiramizu
IPC分类号： C11D7/10 , B08B3/08 , C11D7/00 , C11D11/00 , H01L21/00 , H01L21/304 , H01L21/306 , H01L21/308 , C23G1/02
CPC分类号： H01L21/02052 , B08B3/08 , C11D11/0047 , C11D3/3953 , H01L21/67057
摘要： A method for removing metallic and organic contaminations from a surface of a semiconductor wafer comprises cleaning the semiconductor wafer with a cleaning solution which contains a chlorine compound acting as an oxidant and which has a pH value in the range of 1 to 3. The cleaning solution has an oxidation-reduction potential in the range of 800 mV to 1200 mV when measured on the basis of a saturated calomel electrode at a temperature 25.degree. C.
摘要翻译：从半导体晶片的表面去除金属和有机污染的方法包括用含有氯化合物作为氧化剂并且pH值在1至3范围内的清洗溶液清洗半导体晶片。清洗液在饱和甘汞电极的温度25℃下测定时，氧化还原电位为800mV〜1200mV。

8. 发明授权

US08846773B2 Method for manufacturing anion exchange resin, anion exchange resin, method for manufacturing cation exchange resin, cation exchange resin, mixed bed resin, and method for manufacturing ultrapure water for washing electronic component material 有权
标题翻译：阴离子交换树脂的制造方法，阴离子交换树脂，阳离子交换树脂的制造方法，阳离子交换树脂，混合床树脂，以及制造用于洗涤电子部件材料的超纯水的方法
公开(公告)号：US08846773B2
公开(公告)日：2014-09-30
申请号：US13466446
申请日：2012-05-08
申请人： Takeo Fukui , Tetsuo Mizuniwa , Kazuhiko Tokunaga , Masako Yasutomi
发明人： Takeo Fukui , Tetsuo Mizuniwa , Kazuhiko Tokunaga , Masako Yasutomi
IPC分类号： B01J41/14
CPC分类号： B01J47/04 , B01J39/20 , B01J41/14 , C02F1/42 , C02F2001/422 , C02F2001/425 , C02F2001/427 , C02F2103/04 , C08F8/24 , C08F8/32 , C08F212/04
摘要： This invention relates to a method for manufacturing a cation exchange resin, wherein the method includes the steps of: copolymerizing a monovinyl aromatic monomer and a cross-linkable aromatic monomer to obtain a cross-linked copolymer; specifying a content of a leachable compound represented by formula (I) to be 400 μg or less relative to 1 g of the cross-linked copolymer, wherein Z represents a hydrogen atom or an alkyl group, and l represents a natural number; and then sulfonating the cross-linked copolymer to form a sulfonylated cross-linked copolymer.
摘要翻译：本发明涉及一种阳离子交换树脂的制造方法，该方法包括以下步骤：使单乙烯基芳族单体和可交联的芳族单体共聚得到交联共聚物; 其中Z表示氢原子或烷基，l表示自然数，表示式（I）表示的可浸出化合物的含量相对于1g交联共聚物为400μg以下。然后磺化交联共聚物以形成磺酰化交联共聚物。

9. 发明授权

US08476324B2 Method for manufacturing anion exchange resin, anion exchange resin, method for manufacturing cation exchange resin, cation exchange resin, mixed bed resin, and method for manufacturing ultrapure water for washing electronic component material 有权
标题翻译：阴离子交换树脂的制造方法，阴离子交换树脂，阳离子交换树脂的制造方法，阳离子交换树脂，混合床树脂，以及制造用于洗涤电子部件材料的超纯水的方法
公开(公告)号：US08476324B2
公开(公告)日：2013-07-02
申请号：US12596458
申请日：2008-04-15
申请人： Takeo Fukui , Tetsuo Mizuniwa , Kazuhiko Tokunaga , Masako Yasutomi
发明人： Takeo Fukui , Tetsuo Mizuniwa , Kazuhiko Tokunaga , Masako Yasutomi
IPC分类号： B01J41/14
CPC分类号： B01J47/04 , B01J39/20 , B01J41/14 , C02F1/42 , C02F2001/422 , C02F2001/425 , C02F2001/427 , C02F2103/04 , C08F8/24 , C08F8/32 , C08F212/04
摘要： A method for manufacturing an anion exchange resin, in which remaining of impurities and generation of decomposition products are suppressed and leachables are reduced, the method including the following steps (1-a) to (1-e) of: (1-a) obtaining a cross-linked copolymer by copolymerizing a monovinyl aromatic monomer and a cross-linkable aromatic monomer; (1-b) specifying the content of a specific leachable compound to be 400 μg or less relative to 1 g of the cross-linked copolymer; (1-c) haloalkylating the cross-linked copolymer so as to introduce 80 percent by mole or less of haloalkyl group relative to the monovinyl aromatic monomer; (1-d) removing a specific leachable compound from the haloalkylated cross-linked copolymer; and (1-e) subjecting the haloalkylated cross-linked copolymer to a reaction with an amine compound.
摘要翻译：（1-a）〜（1-e）所示的方法，其中，所述阴离子交换树脂的制造方法，其中杂质的残留和分解产物的产生被抑制，可浸出物的还原，通过共聚单乙烯基芳族单体和可交联的芳族单体获得交联共聚物; （1-b）指定特定可浸出化合物的含量相对于1g交联共聚物为400μm或更小; （1-c）使交联共聚物卤代烷基化，从而相对于单乙烯基芳族单体引入80摩尔％以下的卤代烷基; （1-d）从卤代烷基化交联共聚物中除去特定的可浸出化合物; 和（1-e）使卤代烷基化的交联共聚物与胺化合物反应。

10. 发明授权

US08765825B2 Method for manufacturing anion exchange resin, anion exchange resin, method for manufacturing cation exchange resin, cation exchange resin, mixed bed resin, and method for manufacturing ultrapure water for washing electronic component material 有权
标题翻译：阴离子交换树脂的制造方法，阴离子交换树脂，阳离子交换树脂的制造方法，阳离子交换树脂，混合床树脂，以及制造用于洗涤电子部件材料的超纯水的方法
公开(公告)号：US08765825B2
公开(公告)日：2014-07-01
申请号：US13466663
申请日：2012-05-08
申请人： Takeo Fukui , Tetsuo Mizuniwa , Kazuhiko Tokunaga , Masako Yasutomi
发明人： Takeo Fukui , Tetsuo Mizuniwa , Kazuhiko Tokunaga , Masako Yasutomi
IPC分类号： B01J41/14
CPC分类号： B01J47/04 , B01J39/20 , B01J41/14 , C02F1/42 , C02F2001/422 , C02F2001/425 , C02F2001/427 , C02F2103/04 , C08F8/24 , C08F8/32 , C08F212/04
摘要： The invention relates to a method for manufacturing an anion exchange resin, wherein the method includes the step of contacting a water soluble polymer containing an anionic dissociative group with a resin to produce an anion exchange resin. In the method, an amount of contact of the water soluble polymer is 0.01 to 10 mmol/L, in terms of an amount of the anionic dissociative group, relative to 1 liter of the anion exchange resin, and a wafer surface flatness (Rms) of the anion exchange resin is 4 Å or less, determined by a silicon wafer test.
摘要翻译：本发明涉及阴离子交换树脂的制造方法，该方法包括将含有阴离子解离基团的水溶性聚合物与树脂接触以产生阴离子交换树脂的步骤。在该方法中，相对于1升阴离子交换树脂，水溶性聚合物的接触量为0.01〜10mmol / L，以阴离子离解基团的量计，晶片表面平坦度（Rms）的阴离子交换树脂为4以下，通过硅晶片试验测定。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式