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1. 发明授权

US06479121B1 Optical recording medium and method of fabricating same 失效
标题翻译：光记录介质及其制造方法
公开(公告)号：US06479121B1
公开(公告)日：2002-11-12
申请号：US09665473
申请日：2000-09-20
申请人： Hiroshi Miura , Katsunari Hanaoka , Nobuaki Onagi , Makoto Harigaya
发明人： Hiroshi Miura , Katsunari Hanaoka , Nobuaki Onagi , Makoto Harigaya
IPC分类号： B32B302
CPC分类号： G11B7/26 , C22C12/00 , G11B7/2403 , G11B7/2433 , G11B7/2578 , G11B7/2585 , G11B2007/24308 , G11B2007/2431 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , Y10T428/21
摘要： An optical information recording medium having a substrate, a first dielectric layer provided on the substrate, a recording layer provided on the first dielectric layer, a second dielectric layer provided on the recording layer, a light reflection and heat dissipation layer provided on the light reflection and heat dissipation layer, and a crystallization accelerating layer provided in contact with at least a portion of the recording layer and made of a material including a substance selected from Bi, Bi-containing compounds, Al, Al-containing compounds, In, In-containing compounds, Tl and Tl-containing compounds.
摘要翻译：一种光学信息记录介质，具有基板，设置在基板上的第一介电层，设置在第一介电层上的记录层，设置在记录层上的第二介质层，设置在光反射上的光反射和散热层和散热层，以及与至少一部分记录层接触并由包含选自Bi，Bi的化合物，Al，含Al化合物的材料制成的结晶促进层，In，In- 含有化合物，含T1和T1的化合物。

2. 发明授权

US07273534B2 Optical device substrate film-formation apparatus, optical disk substrate film-formation method, substrate holder manufacture method, substrate holder, optical disk and a phase-change recording type of optical disk 失效
标题翻译：光学元件基板成膜装置，光盘基板成膜方法，基板支架的制造方法，基板支架，光盘以及相变记录型的光盘
公开(公告)号：US07273534B2
公开(公告)日：2007-09-25
申请号：US10896046
申请日：2004-07-22
申请人： Kazunori Ito , Katsunari Hanaoka , Hiroshi Deguchi , Nobuaki Onagi , Hiroko Tashiro , Kiyoto Shibata , Yasutomo Aman , Hiroshi Miura , Wataru Ohtani , Hajime Yuzurihara , Masaru Shinkai
发明人： Kazunori Ito , Katsunari Hanaoka , Hiroshi Deguchi , Nobuaki Onagi , Hiroko Tashiro , Kiyoto Shibata , Yasutomo Aman , Hiroshi Miura , Wataru Ohtani , Hajime Yuzurihara , Masaru Shinkai
IPC分类号： C23C14/34 , C23C16/00
CPC分类号： C23C14/50 , B25B11/005 , C23C14/568 , G11B7/252 , G11B7/258 , G11B7/265 , G11B2007/24308 , G11B2007/2431 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , Y02T50/67
摘要： In an optical disk substrate film-formation apparatus which prepared an optical disk by forming a thin film on a substrate, the optical disk substrate is held by a holder section. A contact support surface is provided to the holder section which closely contacts at least a portion of the surface of the optical disk substrate rear to the surface where the think film is formed.
摘要翻译：在通过在基板上形成薄膜来制备光盘的光盘基片成膜装置中，光盘基片被保持部保持。将接触支撑面设置在保持部上，该保持部与形成思维膜的表面的后方紧贴至光盘基板的表面的至少一部分。

3. 发明授权

US06841049B2 OPTICAL DEVICE SUBSTRATE FILM-FORMATION APPARATUS, OPTICAL DISK SUBSTRATE FILM-FORMATION METHOD, SUBSTRATE HOLDER MANUFACTURE METHOD, SUBSTRATE HOLDER, OPTICAL DISK AND A PHASE-CHANGE RECORDING TYPE OF OPTICAL DISK 失效
标题翻译：光学设备基板薄膜形成装置，光盘基板薄膜形成方法，基板支架制造方法，基板支架，光盘和相变记录型光盘
公开(公告)号：US06841049B2
公开(公告)日：2005-01-11
申请号：US09498375
申请日：2000-02-04
申请人： Kazunori Ito , Katsunari Hanaoka , Hiroshi Deguchi , Nobuaki Onagi , Hiroko Tashiro , Kiyoto Shibata , Yasutomo Aman , Hiroshi Miura , Wataru Ohtani , Hajime Yuzurihara , Masaru Shinkai
发明人： Kazunori Ito , Katsunari Hanaoka , Hiroshi Deguchi , Nobuaki Onagi , Hiroko Tashiro , Kiyoto Shibata , Yasutomo Aman , Hiroshi Miura , Wataru Ohtani , Hajime Yuzurihara , Masaru Shinkai
IPC分类号： G11B7/26 , C23C14/50 , C23C14/56 , G11B7/24 , G11B7/243 , G11B7/252 , G11B7/258 , C23C14/54 , C23C16/00
CPC分类号： C23C14/50 , B25B11/005 , C23C14/568 , G11B7/252 , G11B7/258 , G11B7/265 , G11B2007/24308 , G11B2007/2431 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , Y02T50/67
摘要： In an optical disk substrate film-formation apparatus which prepared an optical disk by forming a thin film on a substrate, the optical disk substrate is held by a holder section. A contact support surface is provided to the holder section which closely contacts at least a portion of the surface of the optical disk substrate rear to the surface where the think film is formed.
摘要翻译：在通过在基板上形成薄膜来制备光盘的光盘基片成膜装置中，光盘基片被保持部保持。将接触支撑面设置在保持部上，该保持部与形成思维膜的表面的后方紧贴至光盘基板的表面的至少一部分。

4. 发明授权

US07990838B2 Process for producing stamper of multi-valued ROM disc, apparatus for producing the same, and resulting disc 失效
标题翻译：用于制造多值ROM盘的压模的方法，用于制造它的装置以及所得到的盘
公开(公告)号：US07990838B2
公开(公告)日：2011-08-02
申请号：US11579816
申请日：2005-05-18
申请人： Katsunari Hanaoka , Hiroshi Miura
发明人： Katsunari Hanaoka , Hiroshi Miura
IPC分类号： G11B7/26
CPC分类号： G11B7/24088 , G11B7/263
摘要： The present invention provides a process for producing inexpensively and effectively a stamper utilized for producing multi-valued ROM discs, which comprises: (i) irradiating a light onto a laminate, thereby producing reacted portions within a thermo reactive layer, (ii) maintaining the reacted portions, which are produced by irradiating the light, within the thermo reactive layer, (iii) maintaining an optical absorption layer under the reacted portions, (iv) maintaining a substrate under the reacted portions, and (v) removing the maintained optical absorption layer and the maintained thermo reactive layer, wherein the laminate comprises the optical absorption layer and the thermo reactive layer on the substrate, the optical absorption layer and the thermo reactive layer are disposed adjacently.
摘要翻译：本发明提供了一种用于生产廉价且有效的用于生产多值ROM盘的压模的方法，其包括：（i）将光照射到层压板上，从而在热反应层内产生反应部分，（ii）保持（iii）在反应部分下保持光吸收层，（iv）在反应部分下维持基底，和（v）除去维持的光吸收层和维持的热反应层，其中层压体包括基底上的光吸收层和热反应层，光吸收层和热反应层相邻设置。

5. 发明申请

US20070217322A1 Process for Producing Stamper of Multi-Valued Rom Disc, Apparatus for Producing the Same, and Resulting Disc 失效
标题翻译：用于制造多值罗盘的压模的方法，用于生产它的装置以及产生的光盘
公开(公告)号：US20070217322A1
公开(公告)日：2007-09-20
申请号：US11579816
申请日：2005-05-18
申请人： Katsunari Hanaoka , Hiroshi Miura
发明人： Katsunari Hanaoka , Hiroshi Miura
IPC分类号： G11B7/26
CPC分类号： G11B7/24088 , G11B7/263
摘要： The present invention provides a process for producing inexpensively and effectively a stamper utilized for producing multi-valued ROM discs, which comprises: (i) irradiating a light onto a laminate, thereby producing reacted portions within a thermo reactive layer, (ii) maintaining the reacted portions, which are produced by irradiating the light, within the thermo reactive layer, (iii) maintaining an optical absorption layer under the reacted portions, (iv) maintaining a substrate under the reacted portions, and (v) removing the maintained optical absorption layer and the maintained thermo reactive layer, wherein the laminate comprises the optical absorption layer and the thermo reactive layer on the substrate, the optical absorption layer and the thermo reactive layer are disposed adjacently.
摘要翻译：本发明提供了一种用于生产廉价且有效的用于生产多值ROM盘的压模的方法，其包括：（i）将光照射到层压板上，从而在热反应层内产生反应部分，（ii）保持（iii）在反应部分下保持光吸收层，（iv）在反应部分下维持基底，和（v）除去维持的光吸收层和维持的热反应层，其中层压体包括基底上的光吸收层和热反应层，光吸收层和热反应层相邻设置。

6. 发明授权

US6001720A Method for forming ohmic contact 失效
标题翻译：形成欧姆接触的方法
公开(公告)号：US6001720A
公开(公告)日：1999-12-14
申请号：US726862
申请日：1996-10-04
申请人： Katsunari Hanaoka , Ikuo Shiota
发明人： Katsunari Hanaoka , Ikuo Shiota
IPC分类号： H01L21/265 , H01L21/285 , H01L21/28 , H01L21/31
CPC分类号： H01L21/28512 , H01L21/2652 , Y10S438/95
摘要： A method for forming ohmic contact has the steps of a) a process for forming an insulating film having a predetermined thickness on a diffusive layer formed on a semiconductor substrate; b) a process for forming a mask on the insulating film; the mask having a small selective ratio with respect to the insulating film and having an opening portion for a contact hole; c) a process for implanting ions into the diffusive layer through the opening portion; d) a process for taking heat treatment to electrically activate the implanted ions; e) a process for completely removing the mask and forming the contact hole by simultaneously etching the mask and the insulating film exposed through the opening portion of the mask; and f) a process for making an electrode come in ohmic contact with the semiconductor substrate exposed from the formed contact hole. In this method, the ohmic contact is formed with high accuracy with respect to a fine contact hole.
摘要翻译：一种形成欧姆接触的方法具有以下步骤：a）在半导体衬底上形成的扩散层上形成具有预定厚度的绝缘膜的工艺; b）在绝缘膜上形成掩模的工艺; 所述掩模相对于所述绝缘膜具有小的选择比并且具有用于接触孔的开口部分; c）通过所述开口部分将离子注入到扩散层中的方法; d）进行热处理以电激活注入离子的方法; e）通过同时蚀刻掩模和通过掩模的开口部分暴露的绝缘膜来完全去除掩模并形成接触孔的工艺; 以及f）用于使电极与形成的接触孔露出的半导体衬底欧姆接触的工艺。在该方法中，相对于微细接触孔，高精度地形成欧姆接触。

7. 发明授权

US5656841A Semiconductor device with contact hole 失效
标题翻译：具有接触孔的半导体器件
公开(公告)号：US5656841A
公开(公告)日：1997-08-12
申请号：US545398
申请日：1995-10-19
申请人： Hirofumi Watanabe , Kaihei Isshiki , Tetsurou Tanigawa , Yasuyuki Shindou , Katsunari Hanaoka
发明人： Hirofumi Watanabe , Kaihei Isshiki , Tetsurou Tanigawa , Yasuyuki Shindou , Katsunari Hanaoka
IPC分类号： H01L23/522 , H01L21/768 , H01L21/8238 , H01L27/092 , H01L29/78 , H01L27/11
CPC分类号： H01L21/768 , H01L2924/0002 , Y10S257/903
摘要： In a manufacturing method of a semiconductor device, a gate insulating film is grown in an active region. Thereafter, an N-type polysilicon film is formed on the gate insulating film and is patterned so that a gate electrode and a polysilicon electrode are formed. Next, arsenic ions are implanted onto entire faces of the gate and polysilicon electrodes so that a source-drain region is formed on a substrate. An interlayer insulating film is then formed on an entire face of the source-drain region, etc. Thereafter, a contact hole is formed on a drain region in a position in which the drain region partially overlaps the polysilicon electrode. A surface portion of the polysilicon electrode is exposed into the contact hole. Thereafter, phosphoric ions are implanted through the contact hole with the interlayer insulating film as a mask. The implanted ions are thermally processed to activate these implanted ions. Thereafter, metal wiring is formed. Thus, resistance of a common contact having s three-dimensional structure is reduced.
摘要翻译：在半导体器件的制造方法中，在有源区域中生长栅极绝缘膜。此后，在栅极绝缘膜上形成N型多晶硅膜，并形成栅电极和多晶硅电极。接下来，将砷离子注入到栅极和多晶硅电极的整个表面上，从而在衬底上形成源极 - 漏极区域。然后在源极 - 漏极区域的整个表面上形成层间绝缘膜等。此后，在漏极区域与多晶硅电极部分重叠的位置处的漏极区域上形成接触孔。多晶硅电极的表面部分露出到接触孔中。此后，通过与层间绝缘膜作为掩模的接触孔注入磷酸根离子。将注入的离子热处理以激活这些注入的离子。此后，形成金属布线。因此，具有三维结构的普通接触的电阻降低。

8. 发明授权

US5589712A Semiconductor integrated circuit device and a method of manufacturing the same 失效
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：US5589712A
公开(公告)日：1996-12-31
申请号：US349033
申请日：1994-12-02
申请人： Ikue Kawashima , Katsunari Hanaoka
发明人： Ikue Kawashima , Katsunari Hanaoka
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/768 , H01L23/532 , H01L23/48 , H01L21/44
CPC分类号： H01L21/76838 , H01L23/53223 , H01L2924/0002 , Y10S257/915 , Y10S257/924
摘要： A semiconductor integrated circuit device includes a substrate formed with semiconductor elements and a metal wiring having a laminated structure and provided on the substrate. The metal wiring includes a first layer including aluminum as a main component, and a second layer formed on the first layer. The second layer includes titanium and nitrogen as main components. The second layer includes more titanium than nitrogen in number of atoms. A third layer may be formed between the first and second layers. The third layer includes a compound of aluminum and titanium as a main component. A fourth layer may further be formed between the second and third layers. The fourth layer includes titanium as a main component and is free of aluminum.
摘要翻译：半导体集成电路器件包括形成有半导体元件的基板和具有叠层结构并设置在基板上的金属布线。金属布线包括以铝为主要成分的第一层和形成在第一层上的第二层。第二层包括钛和氮作为主要成分。第二层包括比氮原子多的钛。可以在第一层和第二层之间形成第三层。第三层包括以铝和钛为主要成分的化合物。可以在第二层和第三层之间进一步形成第四层。第四层包括钛作为主要成分并且不含铝。

9. 发明申请

US20130070039A1 SURFACE-EMITTING LASER DEVICE, SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNER, IMAGE FORMING APPARATUS, AND METHOD FOR MANUFACTURING SURFACE-EMITTING LASER DEVICE 有权
标题翻译：表面发射激光器件，表面发射激光阵列，光学扫描仪，图像形成装置以及用于制造表面发射激光器件的方法
公开(公告)号：US20130070039A1
公开(公告)日：2013-03-21
申请号：US13379160
申请日：2011-05-18
申请人： Kazuhiro Harasaka , Shunichi Sato , Masahiro Hayashi , Akihiro Itoh , Katsunari Hanaoka
发明人： Kazuhiro Harasaka , Shunichi Sato , Masahiro Hayashi , Akihiro Itoh , Katsunari Hanaoka
IPC分类号： B41J2/435 , G02B26/08 , H01S5/00
CPC分类号： G03G15/04 , B41J2/442 , B41J2/471 , G02B26/10 , H01S5/18 , H01S5/18313 , H01S5/18355 , H01S5/18377 , H01S5/18391 , H01S5/18394 , H01S5/3202 , H01S5/423
摘要： A surface-emitting laser device includes a transparent dielectric layer provided in an emitting region and configured to cause a reflectance at a peripheral part to be different from a reflectance at a central part in the emitting region. In the surface-emitting laser device, the thickness of a contact layer is different between a region having a relatively high reflectance and a region having a relatively low reflectance in the emitting region. The contact layer is provided on the high refractive index layer of an upper multilayer film reflecting mirror, and the total optical thickness of the high refractive index layer and the contact layer in the region having the relatively low reflectance is deviated from an odd number multiple of a one quarter oscillation wavelength of laser light emitted from the emitting region.
摘要翻译：表面发射激光器件包括设置在发射区域中并被配置为使得在周边部分处的反射率与发射区域中的中心部分的反射率不同的透明电介质层。在表面发射激光器件中，接触层的厚度在具有较高反射率的区域和在发射区域中反射率相对较低的区域之间是不同的。接触层设置在上层多层膜反射镜的高折射率层上，并且具有较低反射率的区域中的高折射率层和接触层的总光学厚度偏离了从发射区域发射的激光的四分之一振荡波长。

10. 发明申请

US20110316961A1 VERTICAL CAVITY SURFACE EMITTING LASER ELEMENT, VERTICAL CAVITY SURFACE EMITTING LASER ARRAY, OPTICAL SCANNING DEVICE, AND IMAGE FORMING APPARATUS 有权
标题翻译：垂直孔表面发射激光元件，垂直孔表面发射激光阵列，光学扫描装置和图像形成装置
公开(公告)号：US20110316961A1
公开(公告)日：2011-12-29
申请号：US13147239
申请日：2009-12-22
申请人： Katsunari Hanaoka
发明人： Katsunari Hanaoka
IPC分类号： B41J2/47 , H01S5/34 , H01S5/42 , H01S5/183
CPC分类号： B41J2/442 , B41J2/455 , B41J2/473 , H01S5/18311 , H01S5/18352 , H01S5/2086 , H01S5/423
摘要： A disclosed vertical cavity surface emitting laser element includes a substrate, a laminated body sandwiching a semiconductor active layer with an upper reflecting mirror and a lower reflecting mirror, a lower electrode, and an upper electrode. The laser element emits laser light in a direction perpendicular to the surface of the substrate when an electric current is supplied between the upper electrode and the lower electrode. The laser element further includes a selective oxidation layer in the upper reflecting mirror having a current blocking structure made of an oxidized region and an unoxidized region, and a detectable portion formed on a side surface of a mesa structure shaped by the upper reflecting mirror including the selective oxidation layer and the active layer, thereby enabling detecting the position of the selective oxidation layer from a top of the laminated body in a depth direction of the laminated body.
摘要翻译：所公开的垂直腔表面发射激光器元件包括基板，夹着半导体有源层与上反射镜和下反射镜，下电极和上电极的层叠体。当在上电极和下电极之间提供电流时，激光元件在垂直于衬底表面的方向上发射激光。激光元件还包括在上反射镜中具有由氧化区域和非氧化区域构成的电流阻挡结构的选择性氧化层，以及形成在由上反射镜形成的台面结构的侧表面上的可检测部分，选择性氧化层和有源层，从而能够在层叠体的深度方向上从层叠体的顶部检测选择氧化层的位置。

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