专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4031159A Method for preparation of polyolefin oil 失效
标题翻译：聚烯烃油的制备方法
公开(公告)号：US4031159A
公开(公告)日：1977-06-21
申请号：US707612
申请日：1976-07-22
申请人： Hiroshi Mandai , Toshiyuki Ukigai , Anri Tominaga , Michito Sato
发明人： Hiroshi Mandai , Toshiyuki Ukigai , Anri Tominaga , Michito Sato
IPC分类号： C08F4/00 , C07C1/00 , C07C2/22 , C07C2/26 , C07C11/02 , C07C67/00 , C08F4/06 , C08F10/00 , C08F10/14 , C10M107/10 , C10N30/02 , C10N40/08 , C10N40/12 , C10N60/02 , C07C3/18
CPC分类号： C08F10/14
摘要： A method of preparing a polyolefin oil in the present invention comprises polymerizing an olefin having 6 or more carbon atoms in the presence of a catalyst mixture consisting of a polyester of polycarboxylic acid and an aluminum halide. The thus prepared polyolefin oil has a low viscosity and a high viscosity index. When the foregoing polymerization is effected by adding aluminum powder to said catalyst mixture, the content of halogen in the resulting polyolefin oil can be decreased all the more.
摘要翻译：在本发明中制备聚烯烃油的方法包括在由多元羧酸的聚酯和卤化铝组成的催化剂混合物的存在下使具有6个或更多个碳原子的烯烃聚合。如此制备的聚烯烃油具有低粘度和高粘度指数。当通过向所述催化剂混合物中加入铝粉进行上述聚合时，所得聚烯烃油中卤素的含量可以降低。

2. 发明授权

US3997622A Method for preparation of olefin oligomer 失效
标题翻译：烯烃低聚物的制备方法
公开(公告)号：US3997622A
公开(公告)日：1976-12-14
申请号：US652426
申请日：1976-01-26
申请人： Hiroshi Isa , Toshiyuki Ukigai , Anri Tominaga , Michito Sato
发明人： Hiroshi Isa , Toshiyuki Ukigai , Anri Tominaga , Michito Sato
IPC分类号： C08F4/00 , B01J31/30 , C07B61/00 , C07C1/00 , C07C2/26 , C07C11/02 , C07C67/00 , C08F4/42 , C08F10/00 , C08F10/14 , C07C3/18
CPC分类号： B01J31/26 , B01J31/0202 , C07C2/26 , B01J21/02 , B01J2231/20 , B01J27/10 , B01J27/125 , C07C2521/02 , C07C2531/02 , C07C2531/26
摘要： A method of preparing an olefin oligomer by polymerizing an olefin having more than 6 carbon atoms, wherein said olefin is to be polymerized in the presence of a catalyst consisting of (a) polyhydric alcohol derivatives obtained by substituting hydrogen atoms of all the whole hydroxyl groups of polyhydric alcohol by either acyl group exclusively or acyl group and alkyl groups, both said acyl group and alkyl group having 1 - 20 carbon atoms, (b) aluminum halide in an amount of 0.7 - 1.0 mole per each ester bond and ether bond possessed by said polyhydric alcohol derivative and (c) metallic aluminum powder.
摘要翻译：一种通过聚合具有多于6个碳原子的烯烃制备烯烃低聚物的方法，其中所述烯烃在催化剂存在下聚合，所述催化剂由（a）通过用全部羟基取代氢原子而获得的多元醇衍生物的多元醇通过酰基或酰基和烷基，所述酰基和具有1-20个碳原子的烷基，（b）每个酯键和醚键具有0.7-1.0摩尔量的卤化铝所述多元醇衍生物和（c）金属铝粉末。

3. 发明授权

US4066715A Method for preparation of olefin oligomer 失效
标题翻译：烯烃低聚物的制备方法
公开(公告)号：US4066715A
公开(公告)日：1978-01-03
申请号：US675238
申请日：1976-04-08
申请人： Hiroshi Isa , Toshiyuki Ukigai , Anri Tominaga , Michito Sato
发明人： Hiroshi Isa , Toshiyuki Ukigai , Anri Tominaga , Michito Sato
IPC分类号： C08F4/00 , A61K8/30 , B01J31/00 , C07B61/00 , C07C1/00 , C07C2/22 , C07C2/24 , C07C2/26 , C07C11/02 , C07C67/00 , C08F4/42 , C08F10/00 , C08F10/14 , C10M143/08 , C10N30/02 , C10N40/08 , C10N40/12 , C10N40/16 , C07C3/18
CPC分类号： C08F10/14
摘要： A method of preparing an olefin oligomer by polymerizing an olefin having 6 or more carbon atoms, wherein said olefin is polymerized in the presence of a catalyst consisting of (a) a polyhydric alcohol derivative obtained by replacing the hydrogen atoms of all the hydroxyl groups of the polyhydric alcohol by either acyl groups exclusively or by acyl groups and alkyl groups, both of said groups having 1 - 20 carbon atoms, (b) an aluminum halide in an amount of 1.1 - 2.8 mole per one ester bond or ether bond possessed by said polyhydric alcohol derivative and (c) metallic aluminum powder.

4. 发明授权

US3997623A Method for preparation of liquid olefin polymers 失效
标题翻译：液体烯烃聚合物的制备方法
公开(公告)号：US3997623A
公开(公告)日：1976-12-14
申请号：US634074
申请日：1975-11-21
申请人： Hiroshi Isa , Toshiyuki Ukigai , Anri Tominaga , Michito Sato
发明人： Hiroshi Isa , Toshiyuki Ukigai , Anri Tominaga , Michito Sato
IPC分类号： C08F4/00 , B01J31/00 , C07B61/00 , C07C1/00 , C07C2/22 , C07C11/02 , C07C67/00 , C08F4/06 , C08F10/00 , C08F10/14 , C07C3/18
CPC分类号： C08F10/14
摘要： When an olefin having 6 or more carbon atoms is polymerized in the presence of a mixture of a polyhydric alcohol derivative and an aluminum halide, said derivative being obtained by replacing hydrogen atoms of all the hydroxyl groups of polyhydric alcohol either by acyl groups exclusively or by acyl groups and alkyl groups, both of said groups having 1 to 20 carbon atoms (in which mixture the amount of said aluminum halide is 1.1 to 2.8 moles per 1 ester bond of said polyhydric alcohol derivative), there can be obtained liquid olefin polymers having various mean molecular weights at a high yield.
摘要翻译：当在多元醇衍生物和卤化铝的混合物存在下使具有6个或更多个碳原子的烯烃聚合时，所述衍生物是通过专门地或通过酰基独立地取代多元醇的全部羟基的氢原子或由酰基和烷基，所述基团具有1至20个碳原子（其中所述卤化铝的量为所述多元醇衍生物的每1个酯键为1.1至2.8摩尔的混合物），可以获得具有各种平均分子量高产。

5. 发明授权

US09076750B2 Semiconductor wafer and manufacturing method thereof 有权
标题翻译：半导体晶片及其制造方法
公开(公告)号：US09076750B2
公开(公告)日：2015-07-07
申请号：US14005975
申请日：2012-04-03
申请人： Michito Sato
发明人： Michito Sato
IPC分类号： H01L29/06 , H01L21/78 , H01L29/34 , H01L21/02
CPC分类号： H01L29/34 , H01L21/0201 , H01L21/02024
摘要： A semiconductor wafer having sag formed at an outer periphery at the time of polishing, wherein a displacement of the semiconductor wafer in a thickness direction is 100 nm or less between a center and a outer peripheral sag start position of the semiconductor wafer, and the center of the semiconductor wafer has a convex shape, an amount of outer peripheral sag of the semiconductor wafer is 100 nm or less, and the outer peripheral sag start position is away from an outer peripheral portion of the semiconductor wafer toward the center or 20 mm or more away from an outer peripheral end of the semiconductor wafer toward the center, the outer peripheral portion being a measurement target of ESFQR.
摘要翻译：在抛光时在外周形成有凹陷的半导体晶片，其中半导体晶片在厚度方向上的位移在半导体晶片的中心和外周起始位置之间为100nm以下，中心半导体晶片的外周凹陷量为100nm以下，外周凹陷开始位置远离半导体晶片的外周部朝向中央或20mm，或者更远离半导体晶片的外周端朝向中心，外周部是ESFQR的测量对象。

6. 发明授权

US06354794B2 Method for automatically transferring wafers between wafer holders in a liquid environment 失效
标题翻译：在液体环境中在晶片保持器之间自动转印晶片的方法
公开(公告)号：US06354794B2
公开(公告)日：2002-03-12
申请号：US09681566
申请日：2001-04-30
申请人： Michito Sato , Hiroaki Fukabori , Yukio Mukaino
发明人： Michito Sato , Hiroaki Fukabori , Yukio Mukaino
IPC分类号： B65G6530
CPC分类号： H01L21/67086 , Y10S134/902 , Y10S414/138 , Y10S414/14
摘要： An apparatus for transferring wafers between wafer holders such as wafer cassettes, etching drums and the like includes a tank for containing a liquid transfer medium in which the wafers can be transferred. The apparatus includes a wafer transfer unit that can transfer a plurality of wafers such as semiconductor wafers between wafer holders, and maintain the wafers in a desired relative orientation during transfer. For example, the wafers can be maintained in a parallel relationship. The apparatus can be used to automatically transfer wafers to etching drums without cross-indexing of the wafers and without manual handling of the wafers.
摘要翻译：用于在诸如晶片盒，蚀刻滚筒等的晶片保持器之间传送晶片的装置包括容纳可以转移晶片的液体转移介质的槽。该装置包括晶片传送单元，其可以在晶片保持器之间传输诸如半导体晶片的多个晶片，并且在传送期间将晶片保持在期望的相对取向。例如，晶片可以保持平行关系。该装置可以用于将晶片自动转移到蚀刻鼓，而不会晶片的交叉分度，而不需要手动处理晶片。

7. 发明授权

US6063205A Use of H.sub.2 O.sub.2 solution as a method of post lap cleaning 失效
标题翻译：使用H2O2溶液作为后贴边清洗方法
公开(公告)号：US6063205A
公开(公告)日：2000-05-16
申请号：US15045
申请日：1998-01-28
申请人： Steven P. Cooper , Michito Sato
发明人： Steven P. Cooper , Michito Sato
IPC分类号： H01L21/304 , H01L21/306 , C03C23/00 , C23G1/00
CPC分类号： H01L21/02052 , H01L21/02013
摘要： A method for post lapping cleaning of silicon wafers wherein the lapped wafer surfaces are cleaned and passivated by being treated with an aqueous hydrogen peroxide solution of about 0.5 to 2% by weight of hydrogen peroxide and then dried.
摘要翻译：一种用于硅晶片的后研磨清洗方法，其中通过用约0.5-2％（重量）过氧化氢的过氧化氢水溶液处理被研磨的晶片表面并进行钝化，然后干燥。

8. 发明申请

US20140008768A1 SEMICONDUCTOR WAFER AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体晶圆及其制造方法
公开(公告)号：US20140008768A1
公开(公告)日：2014-01-09
申请号：US14005975
申请日：2012-04-03
申请人： Michito Sato
发明人： Michito Sato
IPC分类号： H01L29/34 , H01L21/02
CPC分类号： H01L29/34 , H01L21/0201 , H01L21/02024
摘要： A semiconductor wafer having sag formed at an outer periphery at the time of polishing, wherein a displacement of the semiconductor wafer in a thickness direction is 100 nm or less between a center and a outer peripheral sag start position of the semiconductor wafer, and the center of the semiconductor wafer has a convex shape, an amount of outer peripheral sag of the semiconductor wafer is 100 nm or less, and the outer peripheral sag start position is away from an outer peripheral portion of the semiconductor wafer toward the center or 20 mm or more away from an outer peripheral end of the semiconductor wafer toward the center, the outer peripheral portion being a measurement target of ESFQR.
摘要翻译：在抛光时在外周形成有凹陷的半导体晶片，其中半导体晶片在厚度方向上的位移在半导体晶片的中心和外周起始位置之间为100nm以下，中心半导体晶片的外周凹陷量为100nm以下，外周凹陷开始位置远离半导体晶片的外周部朝向中心或20mm，或者更远离半导体晶片的外周端朝向中心，外周部是ESFQR的测量对象。

9. 发明授权

US06503363B2 System for reducing wafer contamination using freshly, conditioned alkaline etching solution 有权
标题翻译：使用新鲜条件碱性蚀刻溶液减少晶圆污染的系统
公开(公告)号：US06503363B2
公开(公告)日：2003-01-07
申请号：US09518502
申请日：2000-03-03
申请人： Masami Nakano , Michito Sato , Brian D. West
发明人： Masami Nakano , Michito Sato , Brian D. West
IPC分类号： H01L2100
CPC分类号： H01L21/67086 , Y10T137/86187
摘要： A system for conditioning an alkaline etching solution for reducing contamination in a silicon wafer etching process. The system includes a conditioning tank for mixing a conditioned alkaline etching solution, the conditioned alkaline etching solution including a conditioning chemical; a conditioning chemical introduction system configured to add the conditioning chemical to the conditioning tank; and a buffer tank for storing the conditioned basic etching solution before using the conditioned alkaline etching solution in an etching process.
摘要翻译：一种用于调节碱蚀刻溶液以减少硅晶片蚀刻工艺中的污染的系统。该系统包括用于混合调节的碱性蚀刻溶液的调理槽，包括调理化学品的经调理的碱性蚀刻溶液; 配置成将调理化学品添加到调理罐的调理化学品引入系统; 以及缓冲罐，用于在蚀刻工艺中使用经调理的碱性蚀刻溶液之前存储经调理的碱性蚀刻溶液。

10. 发明授权

US5211794A Wafer etching apparatus 失效
标题翻译： WAFER ETCHING APPARATUS
公开(公告)号：US5211794A
公开(公告)日：1993-05-18
申请号：US776787
申请日：1991-10-16
申请人： Tatsuo Enomoto , Michito Sato , Shigeyoshi Nezu
发明人： Tatsuo Enomoto , Michito Sato , Shigeyoshi Nezu
IPC分类号： C23F1/08 , C30B33/00 , H01L21/00 , H01L21/306 , H01L21/68
CPC分类号： H01L21/67086 , C30B33/00
摘要： A wafer etching apparatus for etching wafers provided with an orientation flat, composed of a casing, at least five horizontal, parallel and rotative rollers having annular engagement grooves arranged at regular intervals in the axial direction to receive and support wafers vertically, and a press rod means, wherein the rotative rollers are arranged such that the rollers cooperate to circumscribe the wafers, and that when the orientation flat faces any one of the rollers the rest of the rollers cooperate to hold the wafer so as to prevent the orientation flat from coming in contact with the facing roller.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式