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1. 发明申请

US20090219762A1 SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：半导体存储器件
公开(公告)号：US20090219762A1
公开(公告)日：2009-09-03
申请号：US12388873
申请日：2009-02-19
申请人： Hiroshi MAWATARI
发明人： Hiroshi MAWATARI
IPC分类号： G11C16/06
CPC分类号： G11C16/3454 , G11C16/0433
摘要： A semiconductor memory device comprises memory cells which includes a selection transistor and a memory transistor; selection gate lines coupled to a gate of the selection transistor; control gate lines coupled to the control gate of the memory transistor; source lines coupled to a source of the memory transistor; bit lines coupled to the selection transistor; a selection gate line driver circuit; a control gate line driver circuit; and a source line driver circuit, wherein the selection gate line driver circuit comprises a first transistor including a first gate insulation film and drives the selection gate line with a first driving voltage, and the control gate line driver circuit and the source line driver circuit comprise a second transistor including second gate insulation films and drive the control gate line and the source line with a boost voltage higher than the first driving voltage.
摘要翻译：半导体存储器件包括包括选择晶体管和存储晶体管的存储单元; 选择栅极线耦合到选择晶体管的栅极; 耦合到存储晶体管的控制栅极的控制栅极线; 源极线耦合到存储晶体管的源极; 耦合到选择晶体管的位线; 选择栅极线驱动电路; 控制栅线驱动电路; 以及源极线驱动电路，其中所述选择栅线驱动电路包括第一晶体管，所述第一晶体管包括第一栅极绝缘膜，并以第一驱动电压驱动所述选择栅极线，并且所述控制栅线驱动电路和所述源极线驱动电路包括第二晶体管，包括第二栅极绝缘膜，并以比第一驱动电压高的升压电压驱动控制栅线和源极线。

2. 发明申请

US20110222351A1 SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：半导体存储器件
公开(公告)号：US20110222351A1
公开(公告)日：2011-09-15
申请号：US13114952
申请日：2011-05-24
申请人： Hiroshi MAWATARI
发明人： Hiroshi MAWATARI
IPC分类号： G11C16/10
CPC分类号： G11C16/3454 , G11C16/0433
摘要： A semiconductor memory device comprises memory cells which includes a selection transistor and a memory transistor; selection gate lines coupled to a gate of the selection transistor; control gate lines coupled to the control gate of the memory transistor; source lines coupled to a source of the memory transistor; bit lines coupled to the selection transistor; a selection gate line driver circuit; a control gate line driver circuit; and a source line driver circuit, wherein the selection gate line driver circuit comprises a first transistor including a first gate insulation film and drives the selection gate line with a first driving voltage, and the control gate line driver circuit and the source line driver circuit comprises a second transistor including second gate insulation films and drives the control gate line and the source line with a boost voltage higher than the first driving voltage.
摘要翻译：半导体存储器件包括包括选择晶体管和存储晶体管的存储单元; 选择栅极线耦合到选择晶体管的栅极; 耦合到存储晶体管的控制栅极的控制栅极线; 源极线耦合到存储晶体管的源极; 耦合到选择晶体管的位线; 选择栅极线驱动电路; 控制栅线驱动电路; 以及源极线驱动电路，其中所述选择栅极线驱动电路包括第一晶体管，所述第一晶体管包括第一栅极绝缘膜，并以第一驱动电压驱动所述选择栅极线，并且所述控制栅线驱动电路和所述源极线驱动电路包括第二晶体管，包括第二栅极绝缘膜，并以比第一驱动电压高的升压电压驱动控制栅线和源极线。

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