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    • 9. 发明申请
    • OXIDE CRYSTAL GROWTH APPARATUS AND FABRICATION METHOD USING THE SAME
    • 氧化物晶体生长装置和使用该方法的制造方法
    • US20070034144A1
    • 2007-02-15
    • US11463369
    • 2006-08-09
    • Akio OgawaMichihiro SanoHiroyuki KatoHiroshi Kotani
    • Akio OgawaMichihiro SanoHiroyuki KatoHiroshi Kotani
    • C30B23/00C30B25/00C30B28/12C30B28/14
    • C30B29/16C30B23/005C30B23/02
    • A growth apparatus and a method for making a nitrogen (N)-doped oxide crystal grow can be configured to set a nitrogen concentration to a desired concentration and to make the concentration of nitrogen uniform in a depth direction. A nitrogen source gun configured to supply ammonia (NH3) gas into an ultrahigh vacuum chamber can be arranged on a side of an ultrahigh vacuum chamber that is approximately opposite to a side that includes an exhaust port. A stage can be located between the nitrogen source gun and the exhaust port so as to form a flow path for ammonia that allows ammonia introduced into the ultrahigh vacuum chamber to be quickly exhausted after reaching a ZnO substrate placed on the stage. As a result, accumulation of ammonia in the ultrahigh vacuum chamber can be minimized, so that the nitrogen concentration in a crystal growth layer on the ZnO substrate can be set at a desired concentration and can be made uniform in the depth direction.
    • 可以将生长装置和氮(N)掺杂氧化物晶体生长的方法构成为将氮浓度设定为所需浓度,并使氮浓度在深度方向上均匀。 配置成将氮(NH 3)气体供应到超高真空室中的氮源枪可以布置在与包括排气口的一侧大致相反的超高真空室的一侧。 阶段可以位于氮源枪和排气口之间,以便形成氨的流动通道,允许在达到放置在载物台上的ZnO衬底之后,引入超高真空室的氨被快速排出。 结果,可以使超高真空室中的氨的积累最小化,使得ZnO基板上的晶体生长层中的氮浓度可以设定为期望的浓度并且可以在深度方向上均匀。