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1. 发明授权

US06911080B2 Evaluation process of reactivity of silica glass with silicon melt and vibration at its surface, and silica glass crucible not causing the surface vibration 有权
标题翻译：石英玻璃与硅熔体的反应性评价过程及其表面振动，石英玻璃坩埚不会引起表面振动
公开(公告)号：US06911080B2
公开(公告)日：2005-06-28
申请号：US10682112
申请日：2003-10-10
申请人： Hiroshi Kishi , Minoru Kanda , Masanori Fukui
发明人： Hiroshi Kishi , Minoru Kanda , Masanori Fukui
IPC分类号： C03B20/00 , C30B15/10 , C30B15/20 , C30B15/22 , C30B29/06 , C30B35/00 , G01N33/38
CPC分类号： C30B15/10 , C30B35/002 , G01N33/386 , Y10S117/90 , Y10T117/1004 , Y10T117/1032 , Y10T428/131 , Y10T428/1314
摘要： A evaluation process of a vibration level at the surface of silicon melt held in a silica glass crucible is provided by setting in the vacuum furnace, the test piece of the silica glass cut out from a silica glass crucible, melting a little amount of silicon put on said piece of the glass, and measuring a vibration cycle of the silicon melt. Moreover, a silica glass crucible not causing the vibration at the surface of the silicon melt held in the silica glass crucible is also provided, wherein the vibration cycle of a silica glass of a side wall of the crucible is controlled at more than ⅙ seconds.
摘要翻译：在石英玻璃坩埚中保存的硅熔体表面的振动水平的评价过程通过在真空炉中放置，将石英玻璃试样从石英玻璃坩埚切出，熔化少量硅在所述玻璃片上测量硅熔体的振动周期。此外，还提供了不引起保持在石英玻璃坩埚中的硅熔体表面的振动的石英玻璃坩埚，其中坩埚侧壁的石英玻璃的振动周期被控制在大于1/6 秒。

2. 发明授权

US07160387B2 High purity silica crucible by electrolytic refining, and its production method and pulling method 有权
标题翻译：高纯度二氧化硅坩埚通过电解精炼及其制备方法和拉拔方法
公开(公告)号：US07160387B2
公开(公告)日：2007-01-09
申请号：US10781682
申请日：2004-02-20
申请人： Hiroshi Kishi , Masanori Fukui , Yoshiyuki Tsuji
发明人： Hiroshi Kishi , Masanori Fukui , Yoshiyuki Tsuji
IPC分类号： C30B13/06
CPC分类号： C03C3/06 , C03B19/095 , C03B2201/03 , C30B15/10 , C30B29/06 , Y10S117/90 , Y10T117/1032 , Y10T117/1052
摘要： This invention provides a high purity silica crucible having low impurity concentration in its inner portion, and its production method. The crucible, in which at least each content of Na and Li being contained in the depth of 1 mm from the inside surface is less than 0.05 ppm, is given by a production method of a high purity silica glass crucible, wherein a purity of the melted silica powder layer is increased by applying a voltage between a mold and an arc electrode to move impurity metals being contained in the melted silica glass layer to the outside, when the silica crucible is produced by arc plasma heating a raw material powder of silica in an inside surface of a hollow rotary mold. The method comprises, keeping an arc electrode potential of within ±500 V during an arc melting, applying a voltage of from −1000 V to −20000 V to a mold being insulated to the ground, and applying a high voltage to the un-melted silica powder layer of the outside.
摘要翻译：本发明提供了内部杂质浓度低的高纯度二氧化硅坩埚及其制造方法。通过高纯度二氧化硅玻璃坩埚的制造方法给出至少含有内表面1mm以内的Na和Li的含量小于0.05ppm的坩埚，其中，纯度为通过在模具和电弧电极之间施加电压来增加熔融二氧化硅粉末层，以将熔融石英玻璃层中所含的杂质金属移动到外部，当通过电弧等离子体加热二氧化硅原料粉末中空旋转模具的内表面。该方法包括：在电弧熔化期间将电弧电极电位保持在±500V以内，向-1000V至-20000V施加电压至与地绝缘的模具，并将高电压施加到未熔化二氧化硅粉末层外面。

3. 发明申请

US20050000404A1 High purity silica crucible by electrolytic refining, and its production method and pulling method 有权
标题翻译：高纯度二氧化硅坩埚通过电解精炼及其制备方法和拉拔方法
公开(公告)号：US20050000404A1
公开(公告)日：2005-01-06
申请号：US10781682
申请日：2004-02-20
申请人： Hiroshi Kishi , Masanori Fukui , Yoshiyuki Tsuji
发明人： Hiroshi Kishi , Masanori Fukui , Yoshiyuki Tsuji
IPC分类号： C03B20/00 , C03B19/09 , C30B15/00 , C30B15/10 , C30B29/06 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C03C3/06 , C03B19/095 , C03B2201/03 , C30B15/10 , C30B29/06 , Y10S117/90 , Y10T117/1032 , Y10T117/1052
摘要： This invention provides a high purity silica crucible having low impurity concentration in its inner portion, and its production method. The crucible, in which at least each content of Na and Li being contained in the depth of 1 mm from the inside surface is less than 0.05 ppm, is given by a production method of a high purity silica glass crucible, wherein a purity of the melted silica powder layer is increased by applying a voltage between a mold and an arc electrode to move impurity metals being contained in the melted silica glass layer to the outside, when the silica crucible is produced by arc plasma heating a raw material powder of silica in an inside surface of a hollow rotary mold. The method comprises, keeping an arc electrode potential of within ±500 V during an arc melting, applying a voltage of from −1000 V to −20000 V to a mold being insulated to the ground, and applying a high voltage to the un-melted silica powder layer of the outside.
摘要翻译：本发明提供了内部杂质浓度低的高纯度二氧化硅坩埚及其制造方法。通过高纯度二氧化硅玻璃坩埚的制造方法给出至少含有内表面1mm以内的Na和Li的含量小于0.05ppm的坩埚，其中，通过在模具和电弧电极之间施加电压来增加熔融二氧化硅粉末层，以将熔融石英玻璃层中所含的杂质金属移动到外部，当通过电弧等离子体加热二氧化硅原料粉末中空旋转模具的内表面。该方法包括：在电弧熔化期间将电弧电极电位保持在±500V以内，向-1000V至-20000V施加电压至与地绝缘的模具，并将高电压施加到未熔化二氧化硅粉末层外面。

4. 发明申请

US20100170298A1 Vitreous silica crucible manufacturing apparatus 有权
标题翻译：硅玻璃坩埚制造设备
公开(公告)号：US20100170298A1
公开(公告)日：2010-07-08
申请号：US12684178
申请日：2010-01-08
申请人： Masanori Fukui , Hiroshi Kishi , Masaki Morikawa
发明人： Masanori Fukui , Hiroshi Kishi , Masaki Morikawa
IPC分类号： C03B19/06
CPC分类号： C03B19/095 , H05B7/085
摘要： A vitreous silica crucible manufacturing apparatus includes a plurality of carbon electrodes configured to heat and melt raw material powder by arc discharge, and a value of a ratio R2/R1 of a diameter R2 of a front end of each of the carbon electrodes to a diameter R1 of a base end is set in a range of 0.6 to 0.8. Each carbon electrode has a diameter reduction portion formed at a front end position and reduced in diameter from a diameter R3 of a base end side to the diameter R2 of the front end. When a length of the diameter reduction portion is L1, the diameter of the front end is R2, the diameter of the base end is R1, an angle between the axis lines of the carbon electrodes is θ1, and X=(R1−R2)/2, a value of L1−(X/tan(θ1/2)) is set in a range of 50 to 150 mm.
摘要翻译：玻璃状石英玻璃坩埚的制造装置具有多个碳电极，其通过电弧放电来加热和熔化原料粉末，并且每个碳电极的前端的直径R2的比R2 / R1的值与直径基端的R1设定在0.6〜0.8的范围内。每个碳电极具有形成在前端位置并且从基端侧的直径R3到前端的直径R2的直径减小的直径减小部分。当直径减小部分的长度为L1时，前端的直径为R2，基端的直径为R1，碳电极的轴线之间的角度为1; X =（R1- R2）/ 2，将L1-（X / tan（＆amp; 1/2））的值设定在50〜150mm的范围内。

5. 发明申请

US20100126407A1 SILICA GLASS CRUCIBLE AND METHOD FOR PULLING SINGLE-CRYSTAL SILICON 审中-公开
标题翻译：二氧化硅玻璃巧克力和拉伸单晶硅的方法
公开(公告)号：US20100126407A1
公开(公告)日：2010-05-27
申请号：US12694661
申请日：2010-01-27
申请人： Hiroshi Kishi , Masanori Fukui
发明人： Hiroshi Kishi , Masanori Fukui
IPC分类号： C30B15/30
CPC分类号： C30B29/06 , C03C3/06 , C30B15/10 , C30B35/002 , Y10T117/1024
摘要： A silica glass crucible used for pulling single-crystal silicon, which includes a cylindrical straight body part, a bottom part and a curved part located between the straight body part and the bottom part, wherein the curvature radius of the inner wall surface of the curved part is 100 to 240 mm. Variation of the wall thickness W of the curved part is preferably 0.1 to 1.4 mm/cm.
摘要翻译：一种用于拉拔单晶硅的石英玻璃坩埚，其包括圆柱形直体部分，底部和位于直体部分和底部之间的弯曲部分，其中弯曲的内壁表面的曲率半径部分是100到240毫米。弯曲部的壁厚W的变化优选为0.1〜1.4mm / cm。

6. 发明授权

US08657957B2 Method and apparatus for manufacturing fused silica crucible, and the fused silica crucible 有权
标题翻译：熔石英坩埚的制造方法和设备以及石英玻璃坩埚
公开(公告)号：US08657957B2
公开(公告)日：2014-02-25
申请号：US12564197
申请日：2009-09-22
申请人： Hiroshi Kishi , Masanori Fukui , Masaki Morikawa
发明人： Hiroshi Kishi , Masanori Fukui , Masaki Morikawa
IPC分类号： C30B35/00 , C30B11/00 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C03B19/095 , C30B11/002 , C30B15/10 , C30B35/002 , Y10T117/10 , Y10T117/1024 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072
摘要： A method of manufacturing a fused silica crucible by heating and melting a vitreous silica powder compact shaped into a mold using arc discharge of electrodes arranged around a rotation shaft of the mold, includes the steps of: arranging the electrodes in a ring shape, and setting a ratio W/R of a horizontal distance W between the electrode front end and the surface of the vitreous silica powder compact to a vitreous silica powder compact opening radius R, for at least a predetermined time during arc heating, to be in the range of 0.002 to 0.98.
摘要翻译：通过使用设置在模具的旋转轴周围的电极的电弧放电加热熔融成型为模具的玻璃状二氧化硅粉末压块，制造石英坩埚的方法包括以下步骤：将电极布置成环形，并设置电极前端与玻璃状二氧化硅粉末的表面之间的水平距离W的比W / R与电石加压时的至少一定时间成形为玻璃状二氧化硅粉末的开口半径R的比例为 0.002〜0.98。

7. 发明授权

US08416833B2 Arc discharge method, arc discharge apparatus, and fused silica crucible manufacturing apparatus 有权
标题翻译：电弧放电法，电弧放电装置和石英坩埚坩埚的制造装置
公开(公告)号：US08416833B2
公开(公告)日：2013-04-09
申请号：US12563374
申请日：2009-09-21
申请人： Hiroshi Kishi , Masanori Fukui , Masaki Morikawa
发明人： Hiroshi Kishi , Masanori Fukui , Masaki Morikawa
IPC分类号： C03B5/027 , C03B19/01 , C03B19/06
CPC分类号： H05B7/085 , C03B19/095
摘要： An arc discharge method includes the steps of heating and melting a non-conductive object by arc discharge using a plurality of carbon electrodes in a output range of 300 to 12,000 kVA; and setting a ratio of the distance between a contact position at which the carbon electrodes come in contact with each other and a front end to the diameter of the carbon electrode during the start of the arc discharge to be in the range of 0.001 and 0.9.
摘要翻译：电弧放电方法包括以下步骤：使用多个碳电极在300〜12000kVA的输出范围内通过电弧放电来加热和熔融非导电物体; 并且在电弧放电开始期间设定碳电极彼此接触的接触位置与前端与碳电极的直径之间的距离的比率在0.001和0.9的范围内。

8. 发明授权

US08449676B2 Silica glass crucible 有权
标题翻译：二氧化硅玻璃坩埚
公开(公告)号：US08449676B2
公开(公告)日：2013-05-28
申请号：US12430311
申请日：2009-04-27
申请人： Masanori Fukui , Hiroshi Kishi
发明人： Masanori Fukui , Hiroshi Kishi
IPC分类号： C30B35/00 , C30B11/00 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B15/10 , C30B35/002 , Y10T117/10 , Y10T117/1024 , Y10T117/1032 , Y10T117/1052
摘要： A silica glass crucible having a sidewall portion and a bottom portion is provided with a first synthetic silica glass layer constituting an inner layer at least in the sidewall portion, a second synthetic silica glass layer constituting an inner layer at least in a region including a center of the bottom portion, and a natural silica glass layer constituting an outer layer in the sidewall portion and the bottom portion. A melting rate of the second synthetic silica glass layer with respect to a silicon melt is higher than that of the first synthetic silica glass layer. An aluminum concentration of the second synthetic silica glass layer is higher than that of the first synthetic silica glass layer.
摘要翻译：具有侧壁部和底部的石英玻璃坩埚具有至少在侧壁部中构成内层的第一合成石英玻璃层，至少在包括中心的区域中构成内层的第二合成石英玻璃层和在侧壁部和底部构成外层的天然石英玻璃层。第二合成石英玻璃层相对于硅熔体的熔融率高于第一合成石英玻璃层的熔融速度。第二合成石英玻璃层的铝浓度高于第一合成石英玻璃层的铝浓度。

9. 发明授权

US08240169B2 Vitreous silica crucible manufacturing apparatus 有权
标题翻译：硅玻璃坩埚制造设备
公开(公告)号：US08240169B2
公开(公告)日：2012-08-14
申请号：US12684178
申请日：2010-01-08
申请人： Masanori Fukui , Hiroshi Kishi , Masaki Morikawa
发明人： Masanori Fukui , Hiroshi Kishi , Masaki Morikawa
IPC分类号： C03B19/06 , H05B7/22
CPC分类号： C03B19/095 , H05B7/085
摘要： A vitreous silica crucible manufacturing apparatus includes a plurality of carbon electrodes configured to heat and melt raw material powder by arc discharge, and a value of a ratio R2/R1 of a diameter R2 of a front end of each of the carbon electrodes to a diameter R1 of a base end is set in a range of 0.6 to 0.8. Each carbon electrode has a diameter reduction portion formed at a front end position and reduced in diameter from a diameter R3 of a base end side to the diameter R2 of the front end. When a length of the diameter reduction portion is L1, the diameter of the front end is R2, the diameter of the base end is R1, an angle between the axis lines of the carbon electrodes is θ1, and X=(R1−R2)/2, a value of L1−(X/tan(θ1/2)) is set in a range of 50 to 150 mm.
摘要翻译：玻璃状石英玻璃坩埚的制造装置具有多个碳电极，其通过电弧放电来加热和熔化原料粉末，并且每个碳电极的前端的直径R2的比R2 / R1的值与直径基端的R1设定在0.6〜0.8的范围内。每个碳电极具有形成在前端位置并且从基端侧的直径R3到前端的直径R2的直径减小的直径减小部分。当直径减小部分的长度为L1时，前端的直径为R2，基端的直径为R1，碳电极的轴线之间的角度为1; X =（R1- R2）/ 2，将L1-（X / tan（＆amp; 1/2））的值设定在50〜150mm的范围内。

10. 发明授权

US08449352B2 Carbon electrode grinding apparatus 有权
标题翻译：碳电极研磨装置
公开(公告)号：US08449352B2
公开(公告)日：2013-05-28
申请号：US12687264
申请日：2010-01-14
申请人： Masanori Fukui , Minoru Shirakawa , Tadashi Nemoto , Tadashi Sato
发明人： Masanori Fukui , Minoru Shirakawa , Tadashi Nemoto , Tadashi Sato
IPC分类号： B24B19/00
CPC分类号： C03B19/095 , B24B19/16 , H05B7/085
摘要： A carbon electrode grinding apparatus for shaping a front end of an arc discharge carbon electrode is provided with front end grinding blades configured to grind a front end surface of the carbon electrode, lateral surface grinding blades configured to grind a surface from the front end surface to a base end of the carbon electrode, and rotation means configured to rotate and drive the front end grinding blades and the lateral surface grinding blades around a rotation axis line coincident with an axis line of the carbon electrode.
摘要翻译：用于使电弧放电碳电极的前端成形的碳电极研磨装置设置有前端研磨刀片，其被配置为研磨碳电极的前端表面，侧面研磨刀片被构造成从前端表面研磨表面到碳电极的基端，以及旋转装置，被配置为围绕与碳电极的轴线重合的旋转轴线旋转并驱动前端研磨刀片和侧面研磨刀片。

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