会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明申请
    • STRAND GUIDING APPARATUS FOR CONTINUOUS CASTING EQUIPMENT
    • 连续铸造设备的指导装置
    • US20110155342A1
    • 2011-06-30
    • US12978880
    • 2010-12-27
    • Hiroshi KAWAGUCHIFumiki AsanoKazunori Okada
    • Hiroshi KAWAGUCHIFumiki AsanoKazunori Okada
    • B22D11/16
    • B22D11/1281
    • A strand guiding apparatus includes a plurality of pairs of rollers arranged along a moving direction of a strand, a plurality of drive motors for generating driving forces to drive the pairs of rollers, a plurality of worm reducers for transmitting the driving forces of the drive motors to the pairs of rollers while reducing the rotational speed of the drive motors, each worm reducer having a worm extending in a direction orthogonal to an axis of the corresponding roller, and operable to transmit a load occurring at the roller to the corresponding drive motor, and a control unit for controlling the respective rotational speeds of the rollers and/or the respective driving forces of the drive motors based on the load to the drive motors. The reliable control for drive rollers can be attained to have a proper rotational speed without causing a reduction in surface quality and chatter in a strand guiding apparatus for continuous casting equipment using worm reducers.
    • 线引导装置包括沿着绞合线的移动方向布置的多对滚子,用于产生驱动力以驱动该对滚子的多个驱动马达,用于传递驱动马达的驱动力的多个蜗杆减速器 在减少驱动马达的旋转速度的同时,每个蜗轮减速器具有在与相应的滚子的轴线正交的方向上延伸的蜗杆,并且可操作地将在滚子处发生的载荷传递到相应的驱动马达, 以及控制单元,用于基于对驱动马达的负载来控制各个滚子的转速和/或驱动马达的相应驱动力。 可以实现驱动辊的可靠控制,以具有适当的转速,而不会导致使用蜗杆减速器的连续铸造设备的钢绞线引导装置中的表面质量下降和颤动。
    • 5. 发明申请
    • INSPECTION SYSTEM AND INSPECTION METHOD
    • 检查系统和检查方法
    • US20100158348A1
    • 2010-06-24
    • US12719390
    • 2010-03-08
    • Hiroshi KAWAGUCHI
    • Hiroshi KAWAGUCHI
    • G06K9/00
    • G06T5/40G01N21/956G01R31/309G06T5/009G06T2207/10152G06T2207/30148
    • The inspection system arbitrarily selects from among a plurality of optical conditions to change a distribution of reflected or diffracted light component from an object being inspected. The inspection system has a one- or two-dimensional optoelectric conversion image sensor, optically acquires an image of the object by scanning a stage on which the object is mounted or scanning the image sensor, and processes the image to check for defects in the object. Under each optical condition (illumination optical system, detection optical system, scan direction, etc.) the object being inspected is imaged and, based on the brightness distribution and contrast in the detection field of the image sensor, image sensor output correction data is generated to correct the output of the image sensor.
    • 检查系统从多个光学条件中任意选择以改变被检测物体的反射或衍射光分量的分布。 检查系统具有一维或二维光电转换图像传感器,通过扫描安装对象的台面或扫描图像传感器来光学地获取对象的图像,并处理图像以检查对象中的缺陷 。 在每个光学条件(照明光学系统,检测光学系统,扫描方向等)下,对被检查对象进行成像,并且基于图像传感器的检测区域中的亮度分布和对比度,生成图像传感器输出校正数据 以校正图像传感器的输出。
    • 7. 发明申请
    • Semiconductor Memory Device for Reducing Charge/Discharge Power of Write Bitlines
    • 用于降低写入位线的充电/放电功率的半导体存储器件
    • US20120314486A1
    • 2012-12-13
    • US13492231
    • 2012-06-08
    • Masahiko YOSHIMOTOHiroshi KAWAGUCHIShunsuke YOSHIMOTO
    • Masahiko YOSHIMOTOHiroshi KAWAGUCHIShunsuke YOSHIMOTO
    • G11C11/00
    • G11C11/419
    • It is aimed to provide a semiconductor memory device capable of solving a half-select problem in 8Tr SRAMs and, simultaneously, achieving a reduction in charge/discharge power in a half-selected column, which has been a problem with the conventional write-back scheme. An 8Tr SRAM includes 1) a bitline half driver circuit which is capable of reading retention data from read bitline (RBL) of each memory cell of a memory cell group in a column direction and drives the write bitlines only for the memory cells of a half-selected column according to the read data, 2) a selection signal circuit to which an enable signal and a column selection signal of the bitline half driver circuit are input and which activates the bitline half driver circuit, and 3) an equalizer circuit which equalizes the write bitlines of the memory cell group in the column direction and does not precharge the write bitlines.
    • 旨在提供一种能够解决8Tr SRAM中的半选择问题的半导体存储器件,并且同时实现半选择列中的充电/放电功率的降低,这已经是常规回写的问题 方案。 8Tr SRAM包括1)位线半驱动器电路,其能够从列方向读取存储器单元组的每个存储单元的读位线(RBL)读取保留数据,并仅驱动一半的存储单元的写位线 - 根据读取的数据选择的列; 2)选择信号电路,其中输入有位线半驱动电路的使能信号和列选择信号,并且激活位线半驱动电路;以及3)均衡器电路 在列方向上写存储单元组的位线,并且不预写写位线。
    • 10. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • US20100327345A1
    • 2010-12-30
    • US12820531
    • 2010-06-22
    • Hiroshi KAWAGUCHI
    • Hiroshi KAWAGUCHI
    • H01L29/78
    • H01L29/1037H01L29/1041H01L29/1083H01L29/66621H01L29/78
    • A semiconductor device includes a transistor with a substrate on which source and drain regions, both of a first conductivity type, and a channel region of a second conductivity type between the source and drain are formed, and a gate electrode formed in the channel region to bury a trench formed so the depth thereof changes intermittently in the width direction of the gate. In the channel region, each on a surface of the substrate and in a bottom portion of the trench, there are formed a second high-concentration region and a first high-concentration region, and the dopant concentration of the second conductivity type is higher than the dopant concentration of the second conductivity type in portions sideward from the trench. The dopant concentration of the second conductivity type in the first high-concentration region is higher than the dopant concentration of the second conductivity type in the second high-concentration region.
    • 半导体器件包括具有衬底的晶体管,其上形成有源极和漏极之间的第一导电类型和第二导电类型的沟道区的源极和漏极区,以及形成在沟道区中的栅电极, 掩埋形成的沟槽,使其深度在栅极的宽度方向上间歇地变化。 在沟道区域中,在衬底的表面和沟槽的底部各形成第二高浓度区域和第一高浓度区域,并且第二导电类型的掺杂剂浓度高于 第二导电类型的掺杂剂浓度在从沟槽侧向的部分。 第一高浓度区域中的第二导电类型的掺杂剂浓度高于第二高浓度区域中的第二导电类型的掺杂剂浓度。