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1. 发明授权

US5607900A Process for cleaning a surface of thin film of oxide superconductor 失效
标题翻译：清洁氧化物超导体薄膜表面的工艺
公开(公告)号：US5607900A
公开(公告)日：1997-03-04
申请号：US551702
申请日：1995-11-01
申请人： Hiroshi Inada , Takao Nakamura , Michitomo Iiyama , So Tanaka
发明人： Hiroshi Inada , Takao Nakamura , Michitomo Iiyama , So Tanaka
IPC分类号： H01L39/24 , B05D5/12 , B08B5/04
CPC分类号： H01L39/247 , Y10S505/742
摘要： A process for removing contaminants from a surface of a thin film of oxide superconductor deposited on a substrate. The thin film of oxide superconductor is heat-treated in ultra-high vacuum at a temperature which is within a range of -100.degree. C. to +100.degree. C. of the temperature at which oxygen enter into the oxide superconductor.The process is used for removing photo-resist from a surface of thin film of oxide superconductor and for producing a layered structure containing at least one thin film of oxide superconductor such as Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x having a contaminated surface. On the cleaned surface, another thin film of oxide superconductor or non-superconductor is deposited. The resulting structure of layered thin films is used for fabricating superconducting transistor, Josephson junctions, superconducting circuits or the like.
摘要翻译：用于从沉积在基底上的氧化物超导体薄膜的表面去除污染物的方法。氧化物超导体的薄膜在超高真空中在氧进入氧化物超导体的温度在-100℃至+ 100℃的温度范围内进行热处理。该方法用于从氧化物超导体的薄膜的表面去除光致抗蚀剂，并且用于生产含有至少一种具有污染表面的Y1Ba2Cu3O7-x氧化物超导体薄膜的层状结构。在清洁的表面上，沉积另一薄膜的氧化物超导体或非超导体。所得到的层状薄膜结构用于制造超导晶体管，约瑟夫森结，超导电路等。

2. 发明授权

US5840204A Method for patterning a layer on oxide superconductor thin film and superconducting device manufactured thereby 失效
标题翻译：在氧化物超导薄膜上形成图案的方法和由此制造的超导装置
公开(公告)号：US5840204A
公开(公告)日：1998-11-24
申请号：US417395
申请日：1995-04-05
申请人： Hiroshi Inada , So Tanaka , Michitomo Iiyama
发明人： Hiroshi Inada , So Tanaka , Michitomo Iiyama
IPC分类号： H01L39/22 , H01L39/14 , H01L39/24 , H01L21/00
CPC分类号： H01L39/2467 , H01L39/146 , Y10S505/728
摘要： A method for patterning an oxide superconductor thin film, comprising a step of forming a SiO.sub.2 layer on the oxide superconductor thin film, patterning the SiO.sub.2 layer so as to form the same pattern as that of the oxide superconductor thin film which will be patterned, etching the oxide superconductor thin film by using the patterned SiO.sub.2 layer as a mask, and removing the SiO.sub.2 layer by using a weak HF solution, a buffer solution including HF or a mixture including HF.
摘要翻译：一种用于图案化氧化物超导体薄膜的方法，包括在氧化物超导体薄膜上形成SiO 2层的步骤，图案化SiO 2层以形成与将被图案化的氧化物超导体薄膜相同的图案，蚀刻通过使用图案化的SiO 2层作为掩模，并且通过使用弱HF溶液，包括HF的缓冲溶液或包含HF的混合物除去SiO 2层的氧化物超导体薄膜。

3. 发明授权

US5413982A Field effect transistor having c-axis channel layer 失效
标题翻译：具有c轴沟道层的场效应晶体管
公开(公告)号：US5413982A
公开(公告)日：1995-05-09
申请号：US990836
申请日：1992-12-14
申请人： Hiroshi Inada , So Tanaka , Michitomo Iiyama
发明人： Hiroshi Inada , So Tanaka , Michitomo Iiyama
IPC分类号： H01L39/22 , H01L39/14 , H01L39/24 , H01B12/00 , B05D5/12
CPC分类号： H01L39/2467 , H01L39/146 , Y10S505/728
摘要： A superconducting device comprising a substrate having a principal surface, a non-superconducting oxide layer having a similar crystal structure to that of the oxide superconductor, an extremely thin superconducting channel formed of a c-axis oriented oxide superconductor thin film on the non-superconducting oxide layer, a superconducting source region and a superconducting drain region formed of an a-axis oriented oxide superconductor thin film at the both sides of the superconducting channel separated from each other, which are electrically connected each other by the superconducting channel, so that superconducting current can flow through the superconducting channel between the superconducting source region and the superconducting drain region, and a gate electrode of a material which includes silicon through a gate insulator on the superconducting channel for controlling the superconducting current flowing through the superconducting channel, in which the gate electrode is embedded between the superconducting source region and the superconducting drain region and is isolated from the superconducting source region and the superconducting drain region by an insulating region formed by diffused silicon from the gate electrode.
摘要翻译：一种超导装置，包括具有主表面的衬底，具有与氧化物超导体相似的晶体结构的非超导氧化物层，在非超导体上由c轴取向的氧化物超导体薄膜形成的极薄超导通道氧化物层，超导源极区域和由超导通道两侧的a轴取向的氧化物超导体薄膜形成的超导漏极区域，由超导通道彼此电连接，使得超导电流可以流过超导源极区域和超导漏极区域之间的超导通道，以及通过超导通道上的栅极绝缘体包括硅的材料的栅电极，用于控制流过超导通道的超导电流，其中栅电极被嵌入 d，并且通过由栅极电极扩散的硅形成的绝缘区域与超导源极区域和超导漏极区域隔离。

4. 发明授权

US5439875A Process for preparing Josephson junction device having weak link of artificial grain boundary 失效
标题翻译：制备具有人造晶界弱连接的约瑟夫逊连接装置的方法
公开(公告)号：US5439875A
公开(公告)日：1995-08-08
申请号：US337413
申请日：1994-11-07
申请人： So Tanaka , Hiroshi Inada , Michitomo Iiyama
发明人： So Tanaka , Hiroshi Inada , Michitomo Iiyama
IPC分类号： H01L39/22 , H01L39/24 , B44C1/22 , C23F1/00
CPC分类号： H01L39/2496 , Y10S505/729 , Y10S505/82 , Y10S505/922
摘要： A Josephson junction device comprises a single crystalline substrate including a principal surface having a first and a second regions of which at least lattice distance of exposed lattices are slightly different from each other and an oxide superconductor thin film formed on the principal surface of the substrate. The oxide superconductor thin film includes a first and a second portions respectively positioned on the first and the second regions of the substrate, which are constituted of single crystals of the oxide superconductor, lattices of the one shifts at angle of 45.degree. to that of the other, and a grain boundary between said two portions, which constitutes a weak link of the Josephson junction.
摘要翻译：约瑟夫森结器件包括单晶衬底，其包括具有第一和第二区域的主表面，该第一区域和第二区域的至少晶格距离彼此稍微不同，以及形成在衬底的主表面上的氧化物超导体薄膜。氧化物超导体薄膜包括分别位于基板的第一和第二区域上的第一和第二部分，该第一和第二部分由氧化物超导体的单晶构成，一个晶格以45°的角度移动另外，在所述两个部分之间的晶界，构成约瑟夫逊结的薄弱环节。

5. 发明授权

US5629268A Process for preparing a layered superconducting structure 失效
标题翻译：制备层状超导结构的方法
公开(公告)号：US5629268A
公开(公告)日：1997-05-13
申请号：US457313
申请日：1995-06-01
申请人： So Tanaka , Takao Nakamura , Michitomo Iiyama
发明人： So Tanaka , Takao Nakamura , Michitomo Iiyama
IPC分类号： H01L39/24 , B05D5/12
CPC分类号： H01L39/2422 , H01L39/2496 , Y10S505/702 , Y10S505/731 , Y10S505/732
摘要： A process for depositing successively a plurality of thin films on a bottom superconductor layer made of oxide superconductor deposited on a substrate in a single chamber under a condition, the bottom superconductor layer is heated in ultra-high vacuum at a temperature which is lower than the oxygen-trap temperature (T.sub.trap) at which oxygen enter into the oxide superconductor but higher than a temperature which is lower by 100.degree. C. than the oxygen-trap temperature (T.sub.trap -100.degree. C.) and then the first thin film is deposited thereon.
摘要翻译：在一个条件下在单个室中沉积在衬底上的由氧化物超导体制成的底部超导体层上依次沉积多个薄膜的过程，在超高真空中以低于氧吸入温度（Ttrap），氧气进入氧化物超导体，但高于比氧捕获温度（Ttrap-100℃）低100℃的温度，然后沉积第一薄膜上。

6. 发明授权

US5446016A Method for forming a patterned oxide superconductor thin film 失效
标题翻译：用于形成图案化氧化物超导体薄膜的方法
公开(公告)号：US5446016A
公开(公告)日：1995-08-29
申请号：US196541
申请日：1994-02-15
申请人： So Tanaka , Takao Nakamura , Michitomo Iiyama
发明人： So Tanaka , Takao Nakamura , Michitomo Iiyama
IPC分类号： H01L39/24
CPC分类号： H01L39/2496 , H01L39/2464 , Y10S505/702 , Y10S505/728
摘要： A method for forming a patterned oxide superconductor thin film on a substrate comprises steps of forming a metal or semi-metal layer on a portion of the substrate, on which the oxide superconductor thin film will be formed, forming a layer of a material including silicon on a portion of the substrate, on which an insulating layer will be formed, removing the metal or semi-metal layer and depositing an oxide superconductor thin film over the substrate.
摘要翻译：在衬底上形成图案化氧化物超导体薄膜的方法包括以下步骤：在衬底的一部分上形成金属或半金属层，在其上将形成氧化物超导体薄膜，形成包括硅的材料层在其上将形成绝缘层的衬底的一部分上，去除金属或半金属层并在衬底上沉积氧化物超导体薄膜。

7. 发明授权

US5571777A Superconducting thin film having at least one isolated superconducting region formed of oxide superconductor material and method for manufacturing the same 失效
标题翻译：具有由氧化物超导体材料形成的至少一个隔离超导区域的超导薄膜及其制造方法
公开(公告)号：US5571777A
公开(公告)日：1996-11-05
申请号：US479853
申请日：1995-06-07
申请人： So Tanaka , Michitomo Iiyama
发明人： So Tanaka , Michitomo Iiyama
IPC分类号： H01L39/24 , B32B9/00
CPC分类号： H01L39/2464 , Y10S505/701
摘要： A superconducting thin film formed on a semiconductor substrate, which comprises at least one superconducting region formed of an oxide superconductor on the principal surface of the semiconductor substrate and at least one isolation region formed of an oxide insulator including component atoms of the oxide superconductor, which surrounds the superconducting region, and the superconductor thin film has a planar upper surface.
摘要翻译：一种形成在半导体衬底上的超导薄膜，其包括在半导体衬底的主表面上由氧化物超导体形成的至少一个超导区域和由包含氧化物超导体的成分原子的氧化物绝缘体形成的至少一个隔离区域，围绕超导区域，超导体薄膜具有平坦的上表面。

8. 发明授权

US5552374A Oxide superconducting a transistor in crank-shaped configuration 失效
标题翻译：氧化物超导了曲轴形状的晶体管
公开(公告)号：US5552374A
公开(公告)日：1996-09-03
申请号：US221966
申请日：1994-04-04
申请人： So Tanaka , Michitomo IIyama
发明人： So Tanaka , Michitomo IIyama
IPC分类号： H01L39/14 , H01L23/48 , H01L39/06 , H01L39/08
CPC分类号： H01L39/146
摘要： A superconducting device comprises a thin superconducting channel formed of an oxide superconductor, a superconducting source region and a superconducting drain region formed of an oxide superconductor at the both ends of the superconducting channel which connects the superconducting source region and the superconducting drain region, so that superconducting current can flow through the superconducting channel between the superconducting source region and the superconducting drain region. The superconducting device further includes a gate electrode through a gate insulator on the superconducting channel for controlling the superconducting current flowing through the superconducting channel. The length of the gate electrode ranges from one third of the length of the superconducting channel to one and a half length of the superconducting channel.
摘要翻译：超导装置包括由氧化物超导体形成的薄型超导通道，超导源极区域和超导通道两端形成的超导漏极区域，该超导体区域连接超导源极区域和超导漏极区域，使得超导电流可以流过超导源极区域和超导漏极区域之间的超导通道。超导装置还包括通过超导通道上的栅极绝缘体的栅电极，用于控制流过超导通道的超导电流。栅电极的长度范围从超导通道的长度的三分之一到超导通道的一半长度。

9. 发明授权

US5501175A Process for preparing high crystallinity oxide thin film 失效
标题翻译：制备高结晶度氧化物薄膜的方法
公开(公告)号：US5501175A
公开(公告)日：1996-03-26
申请号：US269777
申请日：1994-07-01
申请人： So Tanaka , Michitomo Iiyama
发明人： So Tanaka , Michitomo Iiyama
IPC分类号： C23C14/00 , C23C14/08 , C23C14/24 , C30B23/02 , H01L39/24 , C30B23/08 , C04B35/00
CPC分类号： H01L39/2432 , C23C14/0021 , C23C14/08 , C23C14/24 , C30B23/02 , C30B29/22 , C30B29/225 , C30B29/32
摘要： A process for preparing an oxide thin film which has a crystalline, clean and smooth surface on a substrate. The process is conducted by using an apparatus comprising a vacuum chamber in which an oxidizing gas of O.sub.2 including O.sub.3 can be supplied near the substrate so that pressure around the substrate can be increased while maintaining high vacuum near an evaporation source and Knudsen cell evaporation sources arranged in the vacuum chamber wherein the substrate is heated, molecular beam of constituent atoms of the oxide excluding oxygen are supplied from the K cell evaporation sources and an oxidizing gas is locally supplied to the vicinity of the substrate.
摘要翻译：一种制备在衬底上具有结晶，清洁和光滑表面的氧化物薄膜的方法。该方法通过使用包括真空室的装置进行，其中可以在基板附近供应包括O 3的O 2的氧化气体，使得可以在保持靠近蒸发源的高真空的同时增加基板周围的压力，并布置Knudsen电池蒸发源在基板被加热的真空室中，除了氧气以外的氧化物的构成原子的分子束从K电池蒸发源供给，并且将氧化气体局部地供给到基板附近。

10. 发明授权

US5480861A Layered structure comprising insulator thin film and oxide superconductor thin film 失效
标题翻译：层状结构包括绝缘体薄膜和氧化物超导体薄膜
公开(公告)号：US5480861A
公开(公告)日：1996-01-02
申请号：US274781
申请日：1994-07-14
申请人： So Tanaka , Michitomo Iiyama
发明人： So Tanaka , Michitomo Iiyama
IPC分类号： C01G1/00 , C01G3/00 , C30B29/22 , H01B12/06 , H01B13/00 , H01L39/14 , H01L39/22 , H01L39/24 , H01B12/00 , B05D5/12 , H01L29/06
CPC分类号： H01L39/146 , H01L39/2461
摘要： A layered structure formed on a substrate comprising an oxide superconductor thin film deposited on the substrate, a noble metal monolayer deposited on the oxide superconductor thin film and an insulator thin film deposited on the noble metal monolayer. The noble metal monolayer prevents interdiffusion between the oxide superconductor thin film and the insulator thin film so that they have excellent properties.
摘要翻译：形成在基板上的分层结构，该基板包括沉积在基板上的氧化物超导体薄膜，沉积在氧化物超导体薄膜上的贵金属单层和沉积在贵金属单层上的绝缘体薄膜。贵金属单层防止氧化物超导体薄膜和绝缘体薄膜之间的相互扩散，使得它们具有优异的性能。

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