会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Thin-film semiconductor device for display apparatus thereof and manufacturing method thereof
    • 显示装置用薄膜半导体装置及其制造方法
    • US08330166B2
    • 2012-12-11
    • US13115409
    • 2011-05-25
    • Hiroshi HayashiTakahiro KawashimaGenshiro Kawachi
    • Hiroshi HayashiTakahiro KawashimaGenshiro Kawachi
    • H01L27/14H01L29/04H01L29/10H01L21/00
    • H01L29/78696H01L29/04H01L29/66765
    • A thin-film semiconductor device includes, in order, a substrate, a gate electrode, a gate insulating film, a first channel layer, and a second channel layer. The second channel layer includes a protrusion between first top surface end portions. The protrusion has first lateral surfaces that each extend between one of the first top surface end portions and a top surface of the protrusion. An insulation layer is on the top surface of the protrusion. The insulation layer has second lateral surfaces that each extend to one of second top surface end portions of the insulation layer. Two contact layers are each on one of the second top surface end portions of the insulation layer, adjacent one of the second lateral surfaces of the insulation layer, adjacent one of the first lateral surfaces of the protrusion, and on one of the first top surface end portions of the second channel layer. A source electrode is on one of the two contact layers, and a drain electrode is on the other of the two contact layers. The two contact layers and the upper portion of the protrusion of said second channel layer are of opposite conductivity types.
    • 薄膜半导体器件依次包括衬底,栅电极,栅极绝缘膜,第一沟道层和第二沟道层。 第二通道层包括在第一顶表面端部之间的突起。 突起具有第一侧表面,每个侧表面在第一顶表面端部之一和突起的顶表面之间延伸。 绝缘层位于突起的顶表面上。 绝缘层具有第二侧表面,每个侧表面延伸到绝缘层的第二顶表面端部中的一个。 两个接触层分别位于绝缘层的第二顶表面端部中的一个上,邻近绝缘层的第二侧表面之一,邻近凸起的第一侧表面之一,并且在第一顶表面 第二通道层的端部。 源电极位于两个接触层之一上,漏电极位于两个接触层中的另一个上。 所述第二通道层的两个接触层和突起的上部具有相反的导电类型。