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1. 发明授权

US08225058B2 Memory system managing a size of logs 有权
标题翻译：管理日志大小的内存系统
公开(公告)号：US08225058B2
公开(公告)日：2012-07-17
申请号：US12559983
申请日：2009-09-15
申请人： Hironobu Miyamoto , Hajime Yamazaki , Shinji Yonezawa
发明人： Hironobu Miyamoto , Hajime Yamazaki , Shinji Yonezawa
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F11/1471 , G06F2201/84 , G06F2212/7201
摘要： A memory system according to an embodiment of the present invention includes: a log overflow control unit configured, when a predetermined condition is satisfied, to prohibit a recording operation of a log and to cause a log recording unit only to perform an updating operation of a management table, and when a commit condition is satisfied after the predetermined condition has been satisfied, to prohibit a commit operation by a log reflecting unit and to cause a snapshot storing unit to perform a snapshot storing operation.
摘要翻译：根据本发明的实施例的存储器系统包括：日志溢出控制单元，当满足预定条件时，配置为禁止日志的记录操作，并且使日志记录单元仅执行日志记录单元的更新操作管理表，并且在满足预定条件之后满足提交条件时，禁止日志反射单元的提交操作，并使快照存储单元执行快照存储操作。

2. 发明申请

US20100205353A1 MEMORY SYSTEM 有权
标题翻译：记忆系统
公开(公告)号：US20100205353A1
公开(公告)日：2010-08-12
申请号：US12559983
申请日：2009-09-15
申请人： Hironobu MIYAMOTO , Hajime Yamazaki , Shinji Yonezawa
发明人： Hironobu MIYAMOTO , Hajime Yamazaki , Shinji Yonezawa
IPC分类号： G06F12/00 , G06F12/02
CPC分类号： G06F12/0246 , G06F11/1471 , G06F2201/84 , G06F2212/7201
摘要： A memory system according to an embodiment of the present invention comprises: a log overflow control unit that, when a third condition in which a second log accumulated in a log storage area exceeds a set value is satisfied, stops a recording operation of the second log in the log storage area by a log recording unit and causes a log recording unit to perform an update operation of a second management table in a master table and a recording operation of a first log in the log storage area, and that, when a first condition is satisfied next time, prohibits a commit operation by a log reflecting unit and causes a snapshot storing unit to perform a snapshot storing operation.
摘要翻译：根据本发明实施例的存储器系统包括：日志溢出控制单元，当满足累积在日志存储区域中的第二对数超过设定值的第三条件时，停止第二日志的记录操作在日志记录单元的日志存储区域中，使日志记录单元执行主表中的第二管理表的更新操作和日志存储区中的第一日志的记录操作，并且当第一条件下一次被满足时，禁止日志反射单元的提交操作，并使快照存储单元执行快照存储操作。

3. 发明申请

US20110173380A1 MEMORY SYSTEM AND METHOD OF CONTROLLING MEMORY SYSTEM 有权
标题翻译：存储器系统和控制存储器系统的方法
公开(公告)号：US20110173380A1
公开(公告)日：2011-07-14
申请号：US13063255
申请日：2009-12-28
申请人： Hirokuni Yano , Hajime Yamazaki , Hironobu Miyamoto , Shinji Yonezawa
发明人： Hirokuni Yano , Hajime Yamazaki , Hironobu Miyamoto , Shinji Yonezawa
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F11/1435 , G06F11/1441 , G06F11/1471 , G06F2212/2022 , G06F2212/72 , G06F2212/7207 , G06F2212/7208 , G11C11/5621 , G11C16/0483
摘要： A first log indicating that a system is running is recorded in a second storage unit before a first difference log is recorded in the second storage unit after system startup, and a second log indicating that the system halts is recorded in the second storage unit following the difference log, at the time of normal system halt, and it is judged whether normal system halt has been performed or an incorrect power-off sequence has been performed last time, based on a recorded state of the first and second logs in the second storage unit, at the time of system startup, thereby detecting an incorrect power-off easily and reliably.
摘要翻译：在系统启动之前，将第一差异日志记录在第二存储单元中之前，将指示系统运行的第一日志记录在第二存储单元中，并且指示系统暂停的第二日志记录在第二存储单元之后差异日志，在正常系统停止时，基于第二存储器中的第一和第二日志的记录状态，判断是否正在执行正常系统暂停或者上次执行错误的断电顺序单元，在系统启动时，容易可靠地检测出不正确的断电。

4. 发明授权

US08725932B2 Memory system and method of controlling memory system 有权
标题翻译：内存系统和控制内存系统的方法
公开(公告)号：US08725932B2
公开(公告)日：2014-05-13
申请号：US13063255
申请日：2009-12-28
申请人： Hirokuni Yano , Hajime Yamazaki , Hironobu Miyamoto , Shinji Yonezawa
发明人： Hirokuni Yano , Hajime Yamazaki , Hironobu Miyamoto , Shinji Yonezawa
IPC分类号： G06F12/00 , G06F12/02
CPC分类号： G06F12/0246 , G06F11/1435 , G06F11/1441 , G06F11/1471 , G06F2212/2022 , G06F2212/72 , G06F2212/7207 , G06F2212/7208 , G11C11/5621 , G11C16/0483
摘要： A first log indicating that a system is running is recorded in a second storage unit before a first difference log is recorded in the second storage unit after system startup, and a second log indicating that the system halts is recorded in the second storage unit following the difference log, at the time of normal system halt, and it is judged whether normal system halt has been performed or an incorrect power-off sequence has been performed last time, based on a recorded state of the first and second logs in the second storage unit, at the time of system startup, thereby detecting an incorrect power-off easily and reliably.
摘要翻译：在系统启动之前，将第一差异日志记录在第二存储单元中之前，将指示系统运行的第一日志记录在第二存储单元中，并且指示系统暂停的第二日志记录在第二存储单元之后差异日志，在正常系统停止时，基于第二存储器中的第一和第二日志的记录状态，判断是否正在执行正常系统暂停或者上次执行错误的断电顺序单元，在系统启动时，容易可靠地检测出不正确的断电。

5. 发明授权

US08706988B2 Memory system 失效
标题翻译：内存系统
公开(公告)号：US08706988B2
公开(公告)日：2014-04-22
申请号：US12646100
申请日：2009-12-23
申请人： Shinji Yonezawa , Hajime Yamazaki
发明人： Shinji Yonezawa , Hajime Yamazaki
IPC分类号： G06F12/16 , G06F11/14 , G06F12/02
CPC分类号： G06F11/1471 , G06F11/1441 , G06F11/1469 , G06F12/0246 , G06F2201/84 , G06F2212/7201 , G06F2212/7207
摘要： A memory system comprising a volatile memory unit, a nonvolatile memory unit, and a controller that performs data transfer between a host system and the nonvolatile memory unit via the volatile memory unit stores management information including a storage position of the data stored in the nonvolatile memory unit during a startup operation into the volatile memory unit, and performs, while updating stored management information, data management in the volatile and nonvolatile memory units based on the stored management information. The nonvolatile memory unit includes a snapshot storing area storing a snapshot which is the management information stored in the volatile memory unit at a certain point, a main log storing area storing a main log which is an update information of the management information stored in the volatile memory unit, and a backup log storing area storing a backup log having contents same as contents of the main log. The controller stores the management information of the volatile memory unit in the snapshot storing area as a snapshot when a predetermined condition is satisfied, and sequentially stores the main log in the main log storing area when the management information is changed and the backup log in the backup log storing area.
摘要翻译：包括易失性存储器单元，非易失性存储器单元和经由易失性存储器单元在主机系统和非易失性存储器单元之间执行数据传输的控制器的存储器系统存储包括存储在非易失性存储器中的数据的存储位置的管理信息在启动操作期间单元到易失性存储器单元中，并且基于存储的管理信息执行在易失性和非易失性存储器单元中的存储的管理信息的更新。非易失性存储器单元包括存储快照的快照存储区域，该快照是在某一点存储在易失性存储器单元中的管理信息，存储主日志的主日志存储区域，其是存储在易失性存储器中的管理信息的更新信息存储单元和备份日志存储区域，其存储具有与主日志的内容相同内容的备份日志。当满足预定条件时，控制器将易失性存储器单元的管理信息作为快照存储在快照存储区域中，并且当管理信息改变时备份日志被顺序地存储在主日志存储区域中备份日志存储区域。

6. 发明授权

US09229863B2 Semiconductor storage device 有权
标题翻译：半导体存储设备
公开(公告)号：US09229863B2
公开(公告)日：2016-01-05
申请号：US13462905
申请日：2012-05-03
申请人： Eiji Yoshihashi , Hirokuni Yano , Shinji Yonezawa
发明人： Eiji Yoshihashi , Hirokuni Yano , Shinji Yonezawa
IPC分类号： G06F12/00 , G06F12/08
CPC分类号： G06F12/0804 , G06F12/0246 , G06F12/0866 , G06F2212/214 , G06F2212/7201 , G06F2212/7205
摘要： According to the embodiments, a first storage area and a second storage area specified by a trim request is managed by a first management unit, and the second storage area specified by the trim request is managed by a second management unit. A block in which data of the first management unit are all specified by the trim request from the first or second storage areas and a block in which data of the second management unit are all specified by the trim request from the second storage area are released.
摘要翻译：根据实施例，由修剪请求指定的第一存储区域和第二存储区域由第一管理单元管理，并且由修剪请求指定的第二存储区域由第二管理单元管理。其中第一管理单元的数据全部由来自第一或第二存储区域的修剪请求指定的块和第二管理单元的数据全部由来自第二存储区域的修剪请求指定的块被释放。

7. 发明授权

US06471799B1 Method and device for producing gypsum boards 有权
标题翻译：生产石膏板的方法和装置
公开(公告)号：US06471799B1
公开(公告)日：2002-10-29
申请号：US09623513
申请日：2000-12-06
申请人： Kunitoshi Sasaki , Mikiyoshi Simojima , Shouichi Endo , Shinji Yonezawa
发明人： Kunitoshi Sasaki , Mikiyoshi Simojima , Shouichi Endo , Shinji Yonezawa
IPC分类号： B32B1308
CPC分类号： B28B19/0092 , B28B17/0081
摘要： Provided are a process and an apparatus for producing gypsum boards, both of which feature minimized occurrence of defective products and especially excellent continuous productivity and superb efficiency. Making use of the facts that lining paper sheets for gypsum boards are insulators and a gypsum slurry held between the lining paper sheets is a good electrical conductor, a detection of an electric current flowing between an upper forming unit and a lower forming unit or a like method makes it possible to promptly detect any localized tearing which may occur in the overlay paper and/or underlay paper due to an undesired object or the like mixed in during continuous production of gypsum boards and moreover, to readily remove the undesired object or the like as a cause for the tearing without stopping the production of gypsum boards while preventing the localized tearing from spreading over the entire width of the paper. The production process and apparatus, therefore, permit stable and continuous production of gypsum boards.
摘要翻译：本发明提供一种生产石膏板的方法和装置，其特征在于最小化缺陷产物的出现，特别是优异的连续生产率和极好的效率。利用将石膏板的纸张排列为绝缘体的事实，保持在内衬纸之间的石膏浆料是良好的导电体，检测在上部成形单元和下部成形单元等之间流动的电流方法使得可以在连续生产石膏板期间由于不期望的物体等而迅速检测可能在覆盖纸和/或底纸中发生的任何局部撕裂，此外，容易地去除不需要的物体等作为撕裂的原因，而不停止生产石膏板，同时防止局部撕裂在纸张的整个宽度上扩展。因此，生产工艺和设备可以稳定连续生产石膏板。

8. 发明授权

US09330752B2 Memory system and method for writing data into memory system 有权
标题翻译：用于将数据写入存储器系统的存储器系统和方法
公开(公告)号：US09330752B2
公开(公告)日：2016-05-03
申请号：US13328420
申请日：2011-12-16
申请人： Shinji Yonezawa , Hirokuni Yano , Toshikatsu Hida , Tatsuya Sumiyoshi
发明人： Shinji Yonezawa , Hirokuni Yano , Toshikatsu Hida , Tatsuya Sumiyoshi
IPC分类号： G06F12/00 , G06F13/00 , G06F13/28 , G11C11/56 , G06F12/02 , G11C16/04
CPC分类号： G11C11/5628 , G06F12/0246 , G06F2212/7201 , G06F2212/7207 , G11C16/0483
摘要： A memory system of one embodiment includes: a nonvolatile memory including a plurality of word lines each connected to memory cells, each one of the memory cells being capable storing two bits, the memory cells connected to one of the plurality of word lines constituting an upper page and a lower page, each one of the pages being a unit of data programming; a random access memory configured to store an address translation table indicating relationships between logical addresses designated by a host and physical addresses in the nonvolatile memory. The memory system of the embodiment further includes a memory controller which execute data fixing for saving the address translation table from the random access memory to the nonvolatile memory; and write dummy data to at least one page subsequent to the page in which valid data has been written in the nonvolatile memory before executing the data fixing.
摘要翻译：一个实施例的存储器系统包括：非易失性存储器，包括各自连接到存储器单元的多个字线，每个存储器单元能够存储两个位，存储器单元连接到构成上部的多个字线之一页面和下部页面，每个页面是数据编程的单元; 随机存取存储器，被配置为存储指示由主机指定的逻辑地址与非易失性存储器中的物理地址之间的关系的地址转换表。本实施例的存储器系统还包括一个存储器控制器，它执行数据固定以将地址转换表从随机存取存储器保存到非易失性存储器; 并且在执行数据固定之前，将有效数据写入非易失性存储器中的页面之后的至少一页写入伪数据。

9. 发明申请

US20120159058A1 MEMORY SYSTEM AND METHOD FOR WRITING DATA INTO MEMORY SYSTEM 有权
标题翻译：将数据写入记忆系统的记忆系统和方法
公开(公告)号：US20120159058A1
公开(公告)日：2012-06-21
申请号：US13328420
申请日：2011-12-16
申请人： Shinji Yonezawa , Hirokuni Yano , Toshikatsu Hida , Tatsuya Sumiyoshi
发明人： Shinji Yonezawa , Hirokuni Yano , Toshikatsu Hida , Tatsuya Sumiyoshi
IPC分类号： G06F12/10
CPC分类号： G11C11/5628 , G06F12/0246 , G06F2212/7201 , G06F2212/7207 , G11C16/0483
摘要： A memory system of one embodiment includes: a nonvolatile memory including a plurality of word lines each connected to memory cells, each one of the memory cells being capable storing two bits, the memory cells connected to one of the plurality of word lines constituting an upper page and a lower page, each one of the pages being a unit of data programming; a random access memory configured to store an address translation table indicating relationships between logical addresses designated by a host and physical addresses in the nonvolatile memory. The memory system of the embodiment further includes a memory controller which execute data fixing for saving the address translation table from the random access memory to the nonvolatile memory; and write dummy data to at least one page subsequent to the page in which valid data has been written in the nonvolatile memory before executing the data fixing.
摘要翻译：一个实施例的存储器系统包括：非易失性存储器，包括各自连接到存储器单元的多个字线，每个存储器单元能够存储两个位，存储器单元连接到构成上部的多个字线之一页面和下部页面，每个页面是数据编程的单元; 随机存取存储器，被配置为存储指示由主机指定的逻辑地址与非易失性存储器中的物理地址之间的关系的地址转换表。本实施例的存储器系统还包括一个存储器控制器，它执行数据固定以将地址转换表从随机存取存储器保存到非易失性存储器; 并且在执行数据固定之前，将有效数据写入非易失性存储器中的页面之后的至少一页写入伪数据。

10. 发明授权

US09251055B2 Memory system and control method of memory system 有权
标题翻译：内存系统和内存系统的控制方法
公开(公告)号：US09251055B2
公开(公告)日：2016-02-02
申请号：US13599087
申请日：2012-08-30
申请人： Shinji Yonezawa , Takashi Hirao , Hirokuni Yano , Mitsunori Tadokoro , Hiroki Matsudaira , Akira Sawaoka
发明人： Shinji Yonezawa , Takashi Hirao , Hirokuni Yano , Mitsunori Tadokoro , Hiroki Matsudaira , Akira Sawaoka
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F2212/7205 , G06F2212/7209 , G11C2211/5641
摘要： A memory system in embodiments includes a nonvolatile semiconductor memory that stores user data, a forward lookup address translation table and a reverse lookup address translation table, and a controller. The controller is configured to determine that the user data stored in the nonvolatile semiconductor memory is valid or invalid based on these two tables. The controller may perform data organizing of selecting data determined valid and rewriting the data in a new block. The controller may perform write processing and rewriting processing to the new block alternately at a predetermined ratio. The controller may determine whether a predetermined condition is satisfied on a basis of addresses included in write requests and write data in the MLC mode when the condition is satisfied and write data in the SLC mode when the condition is not satisfied.
摘要翻译：实施例中的存储器系统包括存储用户数据的非易失性半导体存储器，正向查找地址转换表和反向查找地址转换表以及控制器。控制器被配置为基于这两个表来确定存储在非易失性半导体存储器中的用户数据有效或无效。控制器可以执行数据组织，选择确定有效的数据并在新的块中重写数据。控制器可以以预定的比例交替地对新的块执行写入处理和重写处理。当条件满足时，控制器可以基于写入请求中包括的地址和写入数据来确定是否满足预定条件，并且当条件不满足时将控制器写入SLC模式中的数据。

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