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    • 6. 发明申请
    • PROCESS FOR PRODUCING HEXAFLUORO-1,3-BUTADIENE
    • 制备十六烷基-1,3-丁二烯的方法
    • US20090216053A1
    • 2009-08-27
    • US12298863
    • 2007-04-25
    • Hiromoto OhnoToshio Ohi
    • Hiromoto OhnoToshio Ohi
    • C07C17/23C07C17/20
    • C07C21/20C07C17/02C07C17/04C07C17/10C07C17/23C07C17/25C07C17/358C07C17/383C07C21/09C07C19/01C07C19/10C07C21/21
    • Disclosed is a process for producing hexafluoro-1,3-butadiene, which is used for an etching gas capable of being used in fine processing for semiconductors, safely in industrialization and at low cost economically. Specifically disclosed is a process for producing hexafluoro-1,3-butadiene comprises (1) a step comprising allowing a compound having four carbon atoms each which bonds to an atom selected from the group consisting of a bromine atom, an iodine atom and a chlorine atom, to react with a fluorine gas in the presence of a diluting gas in a gas phase, thereby preparing a mixture containing a product (A), and (2) a step comprising eliminating halogens excluding a fluorine atom with a metal from the product (A) prepared in the step (1) in the presence of a solvent, thereby preparing a mixture containing hexafluoro-1,3-butadiene.
    • 公开了一种用于半导体精细加工的蚀刻气体的六氟-1,3-丁二烯的制造方法,工业化安全且经济地低成本。 具体公开了六氟-1,3-丁二烯的制造方法,其特征在于,包括(1)使具有与选自溴原子,碘原子和氯原子的原子键合的四个碳原子的化合物 在气相中在稀释气体的存在下与氟气反应,由此制备含有产物(A)的混合物,和(2)包括用产物中的金属除去氟原子的卤素的步骤 (A)在溶剂存在下制备,从而制备含有六氟-1,3-丁二烯的混合物。