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1. 发明授权

US5041200A Method of manufacturing crystalline thin-film of rare-earth compounds 失效
标题翻译：制造稀土化合物结晶薄膜的方法
公开(公告)号：US5041200A
公开(公告)日：1991-08-20
申请号：US497894
申请日：1990-03-22
申请人： Hiromitsu Ishii , Tsuneharu Takeda , Kyuya Baba , Ikuhiro Yamaguchi
发明人： Hiromitsu Ishii , Tsuneharu Takeda , Kyuya Baba , Ikuhiro Yamaguchi
IPC分类号： C23C14/14 , C30B23/02 , H01F10/12 , H01F10/18 , H01F10/32 , H01F41/14 , H01F41/20
CPC分类号： B82Y25/00 , C23C14/14 , C30B23/02 , C30B29/52 , H01F10/126 , H01F10/18 , H01F10/32 , H01F41/14
摘要： Gd and Bi are used as sputter sources and are simultaneously sputtered, or sputtered alternately, each time in an amount for forming a layer having a thickness of 10 atoms or less, thereby forming a thin film on a substrate, in which Gd and Bi are mixed at a ratio of 4:3. The thin film is heat-treated to form a crystalline thin film having a phase represented by Gd.sub.4 Bi.sub.3.
摘要翻译： Gd和Bi用作溅射源，并且每次以交替的方式溅射或溅射，以形成厚度为10个或更少的层的量，从而在基底上形成薄膜，其中Gd和Bi是以4：3的比例混合。对该薄膜进行热处理，形成具有Gd4Bi3表示的相的结晶性薄膜。

2. 发明授权

US07385224B2 Thin film transistor having an etching protection film and manufacturing method thereof 有权
标题翻译：具有蚀刻保护膜的薄膜晶体管及其制造方法
公开(公告)号：US07385224B2
公开(公告)日：2008-06-10
申请号：US11219171
申请日：2005-09-01
申请人： Hiromitsu Ishii , Hitoshi Hokari , Motohiko Yoshida , Ikuhiro Yamaguchi
发明人： Hiromitsu Ishii , Hitoshi Hokari , Motohiko Yoshida , Ikuhiro Yamaguchi
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L29/7869 , H01L29/41733 , H01L29/45 , H01L29/66969 , H01L29/78618
摘要： A thin film transistor of the present invention includes a semiconductor thin film (8); a gate insulating film (7) formed on one surface of the semiconductor thin film (8); a gate electrode (6) formed to be opposite to the semiconductor thin film (8) through the gate insulating film (7); a source electrode (15) and a drain electrode (16) electrically connected to the semiconductor thin film (8); a source region; a drain region; and a channel region. The thin film transistor further includes an insulating film (9) formed on a peripheral portion corresponding to at least the source region and the drain region of the semiconductor thin film (8), and having a contact hole (10, 11) through which at least a part of each of the source region and the drain region is exposed wherein the source electrode (15) and the drain electrode (16) are connected to the semiconductor thin film (8) through the contact hole (10, 11).
摘要翻译：本发明的薄膜晶体管包括半导体薄膜（8）; 形成在半导体薄膜（8）的一个表面上的栅极绝缘膜（7）; 通过栅极绝缘膜形成为与半导体薄膜（8）相对的栅电极（6）; 电连接到半导体薄膜（8）的源电极（15）和漏电极（16）。源区; 漏区; 和通道区域。薄膜晶体管还包括形成在至少对应于半导体薄膜（8）的源极区域和漏极区域的周边部分上的绝缘膜（9），并且具有接触孔（10,11）源极区域和漏极区域中的至少一部分被暴露，其中源电极（15）和漏电极（16）通过接触孔（10,11）连接到半导体薄膜（8）。

3. 发明申请

US20060043447A1 Thin film transistor having an etching protection film and manufacturing method thereof 有权
标题翻译：具有蚀刻保护膜的薄膜晶体管及其制造方法
公开(公告)号：US20060043447A1
公开(公告)日：2006-03-02
申请号：US11219171
申请日：2005-09-01
申请人： Hiromitsu Ishii , Hitoshi Hokari , Motohiko Yoshida , Ikuhiro Yamaguchi
发明人： Hiromitsu Ishii , Hitoshi Hokari , Motohiko Yoshida , Ikuhiro Yamaguchi
IPC分类号： H01L29/94
CPC分类号： H01L29/7869 , H01L29/41733 , H01L29/45 , H01L29/66969 , H01L29/78618
摘要： A thin film transistor of the present invention includes a semiconductor thin film (8); a gate insulating film (7) formed on one surface of the semiconductor thin film (8); a gate electrode (6) formed to be opposite to the semiconductor thin film (8) through the gate insulating film (7); a source electrode (15) and a drain electrode (16) electrically connected to the semiconductor thin film (8); a source region; a drain region; and a channel region. The thin film transistor further includes an insulating film (9) formed on a peripheral portion corresponding to at least the source region and the drain region of the semiconductor thin film (8), and having a contact hole (10, 11) through which at least a part of each of the source region and the drain region is exposed wherein the source electrode (15) and the drain electrode (16) are connected to the semiconductor thin film (8) through the contact hole (10, 11).
摘要翻译：本发明的薄膜晶体管包括半导体薄膜（8）; 形成在半导体薄膜（8）的一个表面上的栅极绝缘膜（7）; 通过栅极绝缘膜形成为与半导体薄膜（8）相对的栅电极（6）; 电连接到半导体薄膜（8）的源电极（15）和漏电极（16）。源区; 漏区; 和通道区域。薄膜晶体管还包括形成在至少对应于半导体薄膜（8）的源极区域和漏极区域的周边部分上的绝缘膜（9），并且具有接触孔（10,11）源极区域和漏极区域中的至少一部分被暴露，其中源电极（15）和漏电极（16）通过接触孔（10,11）连接到半导体薄膜（8）。

4. 发明授权

US06377322B2 Liquid crystal display device having spontaneous polarization and no compensating capacitors 有权
标题翻译：具有自发极化且无补偿电容器的液晶显示装置
公开(公告)号：US06377322B2
公开(公告)日：2002-04-23
申请号：US09218282
申请日：1998-12-22
申请人： Ikuhiro Yamaguchi , Hiromitsu Ishii
发明人： Ikuhiro Yamaguchi , Hiromitsu Ishii
IPC分类号： G02F1136
CPC分类号： G02F1/13624 , G02F1/136213 , G02F1/141
摘要： Each pair of gate lines GL are arranged aside a corresponding one of rows of pixel electrodes arranged in a matrix form, so as to sandwich pixel electrodes in the direction of columns, whereas each pair of TFTs are arranged to a sandwich corresponding one of the pixel electrodes, and each of data lines DL is arranged aside a corresponding one of columns of pixel electrodes. TFTs are connected to the pixel electrodes and to the gate lines GL so that the pixel electrodes of one row are selected when two of the gate lines GL sandwiching the pixel electrodes are selected. An end of a current path of each TFT is connected to the data line DL. When a pair of TFTs sandwiching one pixel electrode are simultaneously turned on, large current is supplied to the pixel electrode through the data line DL. Source electrode of TFT and source electrode of its proximate (adjacent) thin film transistor are formed by pattering the same metal layer, and share one current path connected to the data line DL. A gate electrode of each of the TFTs is formed in integration with a part of the gate line GL.
摘要翻译：每对栅极线GL排列成以矩阵形式布置的像素电极行中的相应一行，以便沿着列的方向夹着像素电极，而每对TFT布置成夹着对应的一个像素电极，并且数据线DL中的每一条排列在像素电极列中的对应的一列之间。 TFT选择与栅极线GL连接的像素电极和栅极线GL，使得选择夹着像素电极的两条栅极线GL的一行的像素电极。每个TFT的电流路径的一端连接到数据线DL。当夹着一个像素电极的一对TFT同时导通时，通过数据线DL向像素电极提供大电流。 TFT的源电极及其邻近的（相邻的）薄膜晶体管的源电极通过图案化相同的金属层而形成，并且共享连接到数据线DL的一个电流路径。每个TFT的栅电极与栅极线GL的一部分一体形成。

5. 发明授权

US08575246B2 Flame-retardant thermoplastic resin composition and molded article 有权
标题翻译：阻燃热塑性树脂组合物和模制品
公开(公告)号：US08575246B2
公开(公告)日：2013-11-05
申请号：US13145678
申请日：2010-07-05
申请人： Hiromitsu Ishii , Kentaro Togawa , Sadanori Kumazawa
发明人： Hiromitsu Ishii , Kentaro Togawa , Sadanori Kumazawa
IPC分类号： C08K5/34 , C07F9/48
CPC分类号： C08K5/0066 , C08K5/16 , C08K5/5313 , C08L77/00 , C08L77/02
摘要： A flame-retardant thermoplastic resin composition that has a largely decreased corrosiveness to metals while maintaining a high degree of flame retardancy is provided, which is produced by adding a phosphinic acid salt and a compound having a specific structure to a thermoplastic resin, and molded articles with largely decreased corrosiveness to metals are also provided, so that useful molded articles can be provided as materials for mechanical machine parts, electric/electronic components, and automotive parts. The flame-retardant thermoplastic resin composition includes 65 to 99 wt % of (A) a thermoplastic resin, 1 to 35 wt % of (B) at least one phosphinic acid salt selected from the group of phosphinic acid salt, diphosphinic acid salt, polymer of phosphinic acid salts, and polymer of diphosphinic acid salts, and 0.001 to 0.70 wt % of (C) a compound having a specific, and molded articles produced therefrom.
摘要翻译：提供了通过向热塑性树脂中加入次膦酸盐和具有特定结构的化合物而制备的，同时保持高阻燃性而对金属的腐蚀性大大降低的阻燃热塑性树脂组合物，以及模塑制品还提供了对金属的腐蚀性大大降低，从而可以提供有用的模制品作为机械机械部件，电气/电子部件和汽车部件的材料。阻燃性热塑性树脂组合物包含（A）热塑性树脂65〜99重量％，（B）1〜35重量％的选自次膦酸盐，二次膦酸盐，聚磷酸盐的至少一种次膦酸盐的次膦酸盐和二次膦酸盐的聚合物和0.001〜0.70重量％的（C）具有特定的化合物和由其制备的模制品。

6. 发明授权

US08379175B2 Interconnection structure between signal line and thin film transistor 有权
标题翻译：信号线与薄膜晶体管之间的互连结构
公开(公告)号：US08379175B2
公开(公告)日：2013-02-19
申请号：US12500376
申请日：2009-07-09
申请人： Hiromitsu Ishii
发明人： Hiromitsu Ishii
IPC分类号： G02F1/1343
CPC分类号： G02F1/1368 , G02F1/136213 , G02F1/136286 , G02F2201/40 , H01L27/124
摘要： A liquid crystal display device achieving high aperture rate and high definition is disclosed. The liquid crystal display device comprises a plurality of scanning lines 12, an insulating film 21 covering the plurality of scanning lines, a plurality of signal lines 13 having an intersection 13D with each of the scanning lines 12, pixel electrodes formed adjacent to the scanning line and the signal line, a plurality of thin film transistors, each of which having a gate electrode, drain electrode 14b, and source electrode 14a, a gate electrode connected to a semiconductor layer, a gate insulating film, and the scanning lines, a drain electrode 14b or a source electrode 14a connected to the signal lines, the other of the drain and the source electrodes connected to the pixel electrode, the drain electrode and the source electrode are linearly disposed along the signal lines, and a plurality of relay electrodes 17 in which a first overlapped portion 17a overlaps the intersection 13D and a second overlapped portion 17c overlaps one of the electrodes, thus connecting that electrode to the signal lines. The first overlapped portion of the relay electrode has a length sufficient to cover the stepped portions 13E, 13D of the insulating film 21 corresponding to the both ends 12b, 12c of the scanning line 12 in a width direction.
摘要翻译：公开了一种实现高开口率和高清晰度的液晶显示装置。液晶显示装置包括多条扫描线12，覆盖多条扫描线的绝缘膜21，与扫描线12相交的多个信号线13，与扫描线相邻形成的像素电极信号线，多个薄膜晶体管，每个具有栅电极，漏电极14b和源电极14a，连接到半导体层的栅电极，栅极绝缘膜和扫描线，漏极电极14b或连接到信号线的源电极14a，连接到像素电极，漏电极和源电极的漏极和源极中的另一个沿着信号线线性地布置，并且多个继电器电极17 其中第一重叠部分17a与交叉点13D重叠，并且第二重叠部分17c与电极之一重叠，从而将该电极连接到信号线。继电器电极的第一重叠部分具有足以覆盖与扫描线12的宽度方向的两端12b，12c对应的绝缘膜21的台阶部13E，13D的长度。

7. 发明授权

US07956970B2 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US07956970B2
公开(公告)日：2011-06-07
申请号：US11862037
申请日：2007-09-26
申请人： Minoru Yamaguchi , Hiromitsu Ishii
发明人： Minoru Yamaguchi , Hiromitsu Ishii
IPC分类号： G02F1/1337
CPC分类号： G02F1/136213 , G02F1/133707 , G02F1/1393 , G02F2001/134345
摘要： A liquid crystal display device provides, on the internal side of one substrate of a pair of substrates a plurality of pixel electrodes, a plurality of TFTs, a plurality of scan lines and signal lines, and a plurality of convex sections each formed on the internal side of the other substrate so as to be located substantially on a center part of each of the plurality of predetermined regions provided in each of the plurality of pixels. Further, the liquid crystal display device provides an opposing electrode on the internal side of the one substrate. Then, the liquid crystal display device provides vertical alignment films on the respective internal sides of the pair of substrates, and a liquid crystal layer having negative dielectric anisotropy and inserted in the gap between the pair of substrates.
摘要翻译：液晶显示装置在一对基板的一个基板的内侧设置多个像素电极，多个TFT，多条扫描线和信号线，以及多个凸部，每个形成在内部以便基本上位于设置在多个像素中的每一个中的多个预定区域中的每一个的中心部分上。此外，液晶显示装置在一个基板的内侧提供相对电极。然后，液晶显示装置在一对基板的各个内侧上提供垂直取向膜，并且在一对基板之间的间隙中插入具有负介电各向异性的液晶层。

8. 发明授权

US07863382B2 Resin composition and molded article comprising the same 有权
标题翻译：树脂组合物和包含其的模制品
公开(公告)号：US07863382B2
公开(公告)日：2011-01-04
申请号：US11663150
申请日：2005-09-20
申请人： Hiromitsu Ishii , Takashi Nagao , Hiroyuki Ohme
发明人： Hiromitsu Ishii , Takashi Nagao , Hiroyuki Ohme
IPC分类号： C08F242/00
CPC分类号： C08L67/04 , C08K3/016 , C08K5/0066 , C08K5/353 , C08L51/00 , C08L69/00 , C08L101/06 , Y10S525/909 , Y10S525/911 , C08L2666/02 , C08L2666/18
摘要： A resin composition in which a polylactic acid resin (A) 95-5 wt %, an aromatic polycarbonate resin (B) 5-95 wt %, and, with respect to 100 wt parts of the total of the (A) and the (B), at least one compatibilizer selected from a polymer compound containing an acrylic resin or styrene resin unit as a graft (C), a polymer compound to which a glycidyl compound or an acid anhydride is grafted or copolymerized (D) and an oxazoline compound, an oxazine compound and a carbodiimide compound (E) are compounded.
摘要翻译：一种树脂组合物，其中95-5重量％的聚乳酸树脂（A），5-95重量％的芳族聚碳酸酯树脂（B），相对于（A）和（A）的总和的100重量份， B），选自含有丙烯酸树脂或苯乙烯树脂单元作为接枝物（C）的高分子化合物中的至少一种增容剂，缩水甘油基化合物或酸酐接枝或共聚的高分子化合物（D）和恶唑啉化合物，恶嗪化合物和碳二亚胺化合物（E）。

9. 发明授权

US07585698B2 Thin film transistor having oxide semiconductor layer and manufacturing method thereof 有权
标题翻译：具有氧化物半导体层的薄膜晶体管及其制造方法
公开(公告)号：US07585698B2
公开(公告)日：2009-09-08
申请号：US12190102
申请日：2008-08-12
申请人： Hiromitsu Ishii
发明人： Hiromitsu Ishii
IPC分类号： H01L21/00
CPC分类号： H01L29/7869 , G02F1/1368
摘要： A thin film transistor has a semiconductor thin film including zinc oxide, a protection film formed on entirely the upper surface of the semiconductor thin film, a gate insulating film formed on the protection film, a gate electrode formed on the gate insulating film above the semiconductor thin film, and a source electrode and drain electrode formed under the semiconductor thin film so as to be electrically connected to the semiconductor thin film.
摘要翻译：薄膜晶体管具有包括氧化锌的半导体薄膜，整体上形成在半导体薄膜的上表面上的保护膜，形成在保护膜上的栅极绝缘膜，形成在半导体上方的栅极绝缘膜上的栅电极薄膜，以及形成在半导体薄膜下面的源电极和漏电极，以便与半导体薄膜电连接。

10. 发明申请

US20070187760A1 Thin film transistor including low resistance conductive thin films and manufacturing method thereof 失效
标题翻译：包括低电阻导电薄膜的薄膜晶体管及其制造方法
公开(公告)号：US20070187760A1
公开(公告)日：2007-08-16
申请号：US11701343
申请日：2007-02-01
申请人： Mamoru Furuta , Takashi Hirao , Hiroshi Furuta , Tokiyoshi Matsuda , Takahiro Hiramatsu , Hiromitsu Ishii , Hitoshi Hokari , Motohiko Yoshida
发明人： Mamoru Furuta , Takashi Hirao , Hiroshi Furuta , Tokiyoshi Matsuda , Takahiro Hiramatsu , Hiromitsu Ishii , Hitoshi Hokari , Motohiko Yoshida
IPC分类号： H01L27/12 , H01L21/84
CPC分类号： H01L29/7869 , H01L29/41733 , H01L29/42384 , H01L29/66969 , H01L29/78606 , H01L29/78618
摘要： A thin film transistor includes a substrate, and a pair of source/drain electrodes (i.e., a source electrode and a drain electrode) formed on the substrate and defining a gap therebetween. A pair of low resistance conductive thin films are provided such that each coats at least a part of one of the source/drain electrodes. The low resistance conductive thin films define a gap therebetween. An oxide semiconductor thin film layer is continuously formed on upper surfaces of the pair of low resistance conductive thin films and extends along the gap defined between the low resistance conductive thin films so as to function as a channel. Side surfaces of the oxide semiconductor thin film layer and corresponding side surfaces of the low resistance conductive thin films coincide with each other in a channel width direction of the channel.
摘要翻译：薄膜晶体管包括基板和形成在基板上并在其间形成间隙的一对源/漏电极（即源电极和漏电极）。提供一对低电阻导电薄膜，使得每个涂覆源极/漏极之一的至少一部分。低电阻导电薄膜在它们之间限定了间隙。在一对低电阻导电薄膜的上表面上连续地形成氧化物半导体薄膜层，并且沿着限定在低电阻导电薄膜之间的间隙延伸以作为沟道起作用。氧化物半导体薄膜层的侧表面和低电阻导电薄膜的相应侧表面在沟道的沟道宽度方向上彼此重合。

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