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    • 2. 发明授权
    • Production of avermectin compounds
    • 除虫菌素化合物的生产
    • US06255463B1
    • 2001-07-03
    • US09463199
    • 2000-04-06
    • Masanori HondaHiroshi KadoiHiromasa MoritaIsao Nagakura
    • Masanori HondaHiroshi KadoiHiromasa MoritaIsao Nagakura
    • C07M100
    • C07H19/01Y02P20/55
    • This invention provides a process for preparing a compound of the formula (I): wherein R1 is H or a hydroxyimino-protecting group; R2 is H, C1-4 alkyl or C1-4 alkoxy; R3 is C1-8 alkyl, C2-8 alkenyl or C3-8 cycloalkyl, and R4 is H, halo, C1-4 alkyl or C1-4 alkoxy, which process comprises the steps of (a) reacting an avermectin B2 derivative with an oxidizing agent to form a 5-oxo compound; (b) allowing the 5-oxo compound to react with a compound of formula R1—O—NH2 wherein R1 is H or a hydroxyimino-protecting group, to form a 5-imino compound; (c) reacting the 5-imino compound with a thionocarbonizing agent to form a 4″, 23-bisthionocarbonyl ester; (d) reacting the 4″, 23-bisthionocarbonyl ester with a deoxygenation agent to form a 4″, 23-dideoxy compound; and (e) reacting the R″, 23-dideoxy compound with an acid to form a compound of the formula (I).
    • 本发明提供了制备式(I)化合物的方法:其中R1是H或羟基亚氨基保护基; R2是H,C1-4烷基或C1-4烷氧基; R3是C1-8烷基,C2-8烯基或C3-8环烷基,R4是H,卤素,C1-4烷基或C1-4烷氧基,该方法包括以下步骤:(a)使除虫菌素B2衍生物与 氧化剂形成5-氧代化合物; (b)使5-氧代化合物与其中R 1为H或羟基亚氨基保护基的式R 1 -O-NH 2化合物反应,形成5-亚氨基化合物; (c)使5-亚氨基化合物与硫羰化剂反应形成4“,23-双硫羰基酯; (d)使4“,23-双硫代羰基酯与脱氧剂反应以形成4”,23-二脱氧化合物; 和(e)使R“,23-二脱氧化合物与酸反应以形成式(I)的化合物。
    • 3. 发明授权
    • Process for removal of allyl group or allyloxycarbonyl group
    • 除去烯丙基或烯丙氧基羰基的方法
    • US5621084A
    • 1997-04-15
    • US417285
    • 1995-04-03
    • Msanori HondaHiromasa MoritaIsao Nagakura
    • Msanori HondaHiromasa MoritaIsao Nagakura
    • B01J31/02B01J31/18B01J31/22B01J31/24C07B41/02C07B43/04C07C209/62C07C269/06C07D499/00C07D499/88C07D501/00C07H9/04C07H1/06C07C29/10C07C41/00C07K1/00
    • C07D499/00B01J31/185B01J31/2239B01J31/2404C07B41/02C07B43/04C07C209/62C07C269/06C07D499/88C07D501/00C07H9/04B01J2531/824B01J31/2282
    • This invention relates to a process for the removal of an allyl or allyloxycarbonyl group from an allyl or allyloxycarbonyl group protected compound (such as an allylic ester, carbonate, carbamate, O-allyl derivatives or N-allyl derivatives), which comprises contacting the allyl or allyloxycarbonyl group protected compound with a sulfinic acid compound, in the presence of a palladium catalyst in a reaction-inert solvent. Preferably, the sulfinic acid compound is represented by the formula:X--SO.sub.2 M (I)wherein X is C.sub.1-20 alkyl, substituted C.sub.1-20 alkyl (wherein the substituent(s) are independently halo, nitro, sulfo, oxo, amino, cyano, carboxy, hydroxy or moieties derived therefrom), phenyl, substituted phenyl (wherein the substituent(s) are independently C.sub.1-3 alkyl, halo nitro, sulfo, oxo, amino, cyano, carboxy, hydroxy, acetamido or moieties derived therefrom), furyl or thienyl; and M is hydrogen, an alkali metal or ammonium salt residue. Of these, most preferred sulfinic acid compound is lithium p-toluenesulfinate, sodium p-toluenesulfinate, potassium p-toluenesulfinate, p-toluenesulfinic acid, ammonium p-toluenesulfinate, lithium benzenesulfinate, sodium benzenesulfinate, potassium benzenesulfinate, benzenesulfinic acid or ammonium benzenesulfinate. This invention is well suited to a process for the conversion of an allyl ester of 5R,6S-6-(1R-hydroxyethyl)-2-(1R-oxo-3S-thiolanylthio)-2-penem-3-carboxylic acid to 5R,6S-6-(1R-hydroxyethyl)-2-(1R-oxo-3S-thiolanylthio)-2-penem-3-carboxylic acid.
    • 本发明涉及从烯丙基或烯丙氧基羰基保护的化合物(例如烯丙基酯,碳酸酯,氨基甲酸酯,O-烯丙基衍生物或N-烯丙基衍生物)中除去烯丙基或烯丙氧基羰基的方法,该方法包括使烯丙基 或烯丙氧基羰基保护的化合物与亚磺酸化合物在钯催化剂存在下在反应惰性溶剂中反应。 优选地,亚磺酸化合物由下式表示:X-SO 2 M(I)其中X是C 1-20烷基,取代的C 1-20烷基(其中取代基独立地是卤素,硝基,磺基,氧代,氨基, 氰基,羧基,羟基或由其衍生的部分),苯基,取代的苯基(其中取代基独立地为C 1-3烷基,卤代硝基,磺基,氧代,氨基,氰基,羧基,羟基,乙酰氨基或由其衍生的部分) ,呋喃基或噻吩基; M为氢,碱金属或铵盐残基。 其中最优选的亚磺酸化合物是对甲苯亚磺酸锂,对甲苯亚磺酸钠,对甲苯亚磺酸钾,对甲苯亚磺酸,对甲苯亚磺酸铵,苯亚磺酸锂,苯亚磺酸钠,苯亚磺酸钾,苯亚磺酸或苯亚磺酸铵。 本发明非常适用于将5R,6S-6-(1R-羟乙基)-2-(1R-氧代-3S-硫杂环戊基硫代)-2-青霉烯-3-羧酸的烯丙酯转化成5R ,6S-6-(1R-羟乙基)-2-(1R-氧代-3S-硫杂环戊基硫代)-2-青霉烯-3-羧酸。
    • 5. 发明授权
    • Image detector
    • 图像检测器
    • US08735886B2
    • 2014-05-27
    • US13691383
    • 2012-11-30
    • Kenichi MiyamotoMasami HayashiHiromasa MoritaIsao Nojiri
    • Kenichi MiyamotoMasami HayashiHiromasa MoritaIsao Nojiri
    • H01L31/0248
    • H01L31/0248H01L27/14603H01L27/14623H01L27/14632H01L27/14663
    • An image detector comprises: an active matrix-type TFT array substrate having a pixel area, in which photoelectric conversion elements and thin film transistors are arranged in a matrix shape, a data line, and a bias line; a conversion layer, which is arranged on the TFT array substrate and converts radiation into light; and a conductive cover, which covers the conversion layer, wherein the conductive cover is adhered in an adhesion area in an upper layer than an area, in which at least one of the data line and the bias line extend from the pixel area to each of terminals, and wherein inorganic insulation films configured by at least two layers are formed between the at least one of the data line and the bias line and the adhesion area.
    • 图像检测器包括:具有像素区域的有源矩阵型TFT阵列基板,其中光电转换元件和薄膜晶体管以矩阵形状排列,数据线和偏置线; 转换层,其设置在TFT阵列基板上并将辐射转换成光; 以及覆盖所述转换层的导电盖,其中所述导电盖粘附在上层中的粘合区域中,所述粘合区域中的至少一个数据线和偏置线从像素区域延伸到每个区域 端子,并且其中通过至少两层构成的无机绝缘膜形成在数据线和偏置线中的至少一个和粘附区域之间。
    • 6. 发明授权
    • Thin film transistor array, fabrication method thereof, and liquid crystal display device employing the same
    • 薄膜晶体管阵列及其制造方法以及采用该薄膜晶体管阵列的液晶显示装置
    • US06750087B2
    • 2004-06-15
    • US10403121
    • 2003-04-01
    • Hiromasa MoritaKen Nakashima
    • Hiromasa MoritaKen Nakashima
    • H01L2184
    • H01L27/1288H01L27/1214Y10S438/945
    • A fabrication method of a thin film transistor array substrate includes a step of forming a gate insulation film, a semiconductor layer, an ohmic layer, and a metal film on the insulating substrate on which the gate line is formed, a step of forming a resist pattern on the metal film by a photolithography process so that its thickness is thinner on the corresponding section to the semiconductor active layer than on the other sections, a step of etching the metal film to form the source line, the source electrode, and the drain electrode, a step of removing the ohmic layer and the semiconductor layer after removing the resist on the corresponding section to the semiconductor active layer, a step of removing the metal film, and a step of removing the ohmic layer.
    • 薄膜晶体管阵列基板的制造方法包括在其上形成栅极线的绝缘基板上形成栅绝缘膜,半导体层,欧姆层和金属膜的步骤,形成抗蚀剂的步骤 通过光刻工艺在金属膜上形成图案,使得其在半导体有源层的相应部分上的厚度比在其它部分上的厚度更薄,蚀刻金属膜以形成源极线,源电极和漏极 电极,去除在半导体活性层的相应部分上的抗蚀剂去除欧姆层和半导体层的步骤,去除金属膜的步骤和去除欧姆层的步骤。