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1. 发明申请

US20060261422A1 Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060261422A1
公开(公告)日：2006-11-23
申请号：US11485914
申请日：2006-07-13
申请人： Hiroki Sakamoto , Yasuhiro Kawasaki , Kenji Yoneda
发明人： Hiroki Sakamoto , Yasuhiro Kawasaki , Kenji Yoneda
IPC分类号： H01L29/94
CPC分类号： H01L29/518 , C23C16/345 , H01L21/0217 , H01L21/02271 , H01L21/02337 , H01L21/28176 , H01L21/28202 , H01L21/3185 , H01L29/4966
摘要： A semiconductor device includes a gate insulating film formed on a silicon substrate, a gate electrode formed on the gate insulating film, and an electrical insulating film formed on the gate electrode. The electrical insulating film includes a N—H bond and substantially no Si—H bond. The electrical insulating film is formed by using tetrachlorosilane (SiCl4) that contains no hydrogen (H) as a source gas for a silicon nitride film. Thus, the semiconductor device can suppress residual hydrogen in the gate insulating film and prevent interface defects of the gate insulating film, a shift in the threshold voltage of a transistor, and the degradation of an on-state current. A method for manufacturing the semiconductor device also is provided.
摘要翻译：半导体器件包括形成在硅衬底上的栅极绝缘膜，形成在栅极绝缘膜上的栅电极和形成在栅电极上的电绝缘膜。电绝缘膜包括N-H键并且基本上不含Si-H键。通过使用不含氢（H）的四氯硅烷作为氮化硅膜的源气体来形成电绝缘膜。因此，半导体器件可以抑制栅极绝缘膜中的残留氢，并防止栅极绝缘膜的界面缺陷，晶体管的阈值电压的偏移和导通状态电流的劣化。还提供了一种用于制造半导体器件的方法。

2. 发明申请

US20050093024A1 Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050093024A1
公开(公告)日：2005-05-05
申请号：US10975919
申请日：2004-10-26
申请人： Hiroki Sakamoto , Yasuhiro Kawasaki , Kenji Yoneda
发明人： Hiroki Sakamoto , Yasuhiro Kawasaki , Kenji Yoneda
IPC分类号： H01L29/423 , C23C16/34 , H01L21/28 , H01L21/314 , H01L21/318 , H01L29/49 , H01L29/51 , H01L29/78 , H01L29/73 , H01L21/8238
CPC分类号： H01L29/518 , C23C16/345 , H01L21/0217 , H01L21/02271 , H01L21/02337 , H01L21/28176 , H01L21/28202 , H01L21/3185 , H01L29/4966
摘要： A semiconductor device includes a gate insulating film formed on a silicon substrate, a gate electrode formed on the gate insulating film, and an electrical insulating film formed on the gate electrode. The electrical insulating film includes a N—H bond and substantially no Si—H bond. The electrical insulating film is formed by using tetrachlorosilane (SiCl4) that contains no hydrogen (H) as a source gas for a silicon nitride film. Thus, the semiconductor device can suppress residual hydrogen in the gate insulating film and prevent interface defects of the gate insulating film, a shift in the threshold voltage of a transistor, and the degradation of an on-state current. A method for manufacturing the semiconductor device also is provided.
摘要翻译：半导体器件包括形成在硅衬底上的栅极绝缘膜，形成在栅极绝缘膜上的栅电极和形成在栅电极上的电绝缘膜。电绝缘膜包括N-H键并且基本上不含Si-H键。通过使用不含氢（H）的四氯硅烷作为氮化硅膜的源气体来形成电绝缘膜。因此，半导体器件可以抑制栅极绝缘膜中的残留氢，并防止栅极绝缘膜的界面缺陷，晶体管的阈值电压的偏移和导通状态电流的劣化。还提供了一种用于制造半导体器件的方法。

3. 发明授权

US06838327B2 Method for manufacturing semiconductor device having insulating film with N—H bond 有权
标题翻译：具有N-H键绝缘膜的半导体器件的制造方法
公开(公告)号：US06838327B2
公开(公告)日：2005-01-04
申请号：US10375949
申请日：2003-02-27
申请人： Hiroki Sakamoto , Yasuhiro Kawasaki , Kenji Yoneda
发明人： Hiroki Sakamoto , Yasuhiro Kawasaki , Kenji Yoneda
IPC分类号： H01L29/423 , C23C16/34 , H01L21/28 , H01L21/314 , H01L21/318 , H01L29/49 , H01L29/51 , H01L29/78 , H01L21/8238
CPC分类号： H01L29/518 , C23C16/345 , H01L21/28176 , H01L21/28202 , H01L21/3185 , H01L29/4966
摘要： A semiconductor device includes a gate insulating film formed on a silicon substrate, a gate electrode formed on the gate insulating film, and an electrical insulating film formed on the gate electrode. The electrical insulating film includes a N—H bond and substantially no Si—H bond. The electrical insulating film is formed by using tetrachlorosilane (SiCl4) that contains no hydrogen (H) as a source gas for a silicon nitride film. Thus, the semiconductor device can suppress residual hydrogen in the gate insulating film and prevent interface defects of the gate insulating film, a shift in the threshold voltage of a transistor, and the degradation of an on-state current. A method for manufacturing the semiconductor device also is provided.
摘要翻译：半导体器件包括形成在硅衬底上的栅极绝缘膜，形成在栅极绝缘膜上的栅电极和形成在栅电极上的电绝缘膜。电绝缘膜包括N-H键并且基本上不含Si-H键。通过使用不含氢（H）的四氯硅烷（SiCl 4）作为氮化硅膜的源气体来形成电绝缘膜。因此，半导体器件可以抑制栅极绝缘膜中的残留氢，并防止栅极绝缘膜的界面缺陷，晶体管的阈值电压的偏移和导通状态电流的劣化。还提供了一种用于制造半导体器件的方法。

4. 发明授权

US08241561B2 Stress-buffering material 有权
标题翻译：应力缓冲材料
公开(公告)号：US08241561B2
公开(公告)日：2012-08-14
申请号：US12676271
申请日：2010-03-03
申请人： Fumihiko Gejima , Hiroki Sakamoto , Mamoru Sayashi
发明人： Fumihiko Gejima , Hiroki Sakamoto , Mamoru Sayashi
IPC分类号： C22C21/00
CPC分类号： C22C21/00 , B22F2998/10 , C22C1/0416 , C22C1/0491 , C22F1/04 , C22F1/053 , B22F9/082 , B22F3/20
摘要： Inventors of the present invention have found that, by manufacturing a stress-buffering material with a Ca-containing aluminum alloy including 0.1 to 12 at % of Ca, the stress-buffering material at low cost, capable of expanding its use in various fields, and having low Young's modulus that is beyond a conventional level, can be obtain.
摘要翻译：本发明的发明人已经发现，通过使用包含0.1〜12at％的Ca的含Ca的铝合金制造应力缓冲材料，能够以各种领域扩大其应用的低成本的应力缓冲材料，并且可以获得超过常规水平的低杨氏模量。

5. 发明授权

US08163863B2 Polysilane and polysilane-containing resin composition 有权
标题翻译：聚硅烷和含聚硅烷的树脂组合物
公开(公告)号：US08163863B2
公开(公告)日：2012-04-24
申请号：US12096050
申请日：2006-12-01
申请人： Hiroki Sakamoto , Hiroaki Murase , Tsuyoshi Fujiki , Shingo Osawa , Yoshiyuki Morita , Tetsuya Hosomi , Nobuaki Aoki
发明人： Hiroki Sakamoto , Hiroaki Murase , Tsuyoshi Fujiki , Shingo Osawa , Yoshiyuki Morita , Tetsuya Hosomi , Nobuaki Aoki
IPC分类号： C08G77/48 , C08G77/60
CPC分类号： C08G77/60 , C08L83/16 , C09D183/16
摘要： A polysilane having excellent functionalities (e.g., solubility in a solvent and reactivity) is obtained by introducing a structural unit of the following formula (1) to a polysilane through a reaction of a dihalosilane having a Si—H bond and adding a hydrosilylatable compound (e.g., a compound having a carbon-carbon unsaturated bond) to the Si—H bond, wherein R1 represents a hydrogen atom, an organic group, or a silyl group; and “n” denotes an integer of not less than 1.
摘要翻译：通过将具有Si-H键的二卤代硅烷和加入可氢化可硅烷化合物（通过使用可氢化的化合物）反应，将具有下列通式（1）的结构单元引入聚硅烷中，获得具有优异官能度的聚硅烷（例如溶剂中的溶解性和反应性）例如具有碳 - 碳不饱和键的化合物）与Si-H键，其中R1表示氢原子，有机基团或甲硅烷基基团; “n”表示不小于1的整数。

6. 发明申请

US20110065141A1 Method of Diagnosing Pancreatic Cancer with the Use of N-Binding Type Sugar Chains 失效
标题翻译：使用N-结合型糖链诊断胰腺癌的方法
公开(公告)号：US20110065141A1
公开(公告)日：2011-03-17
申请号：US12991340
申请日：2009-05-08
申请人： Tokuzo Arao , Kazuko Matsumoto , Kazuto Nishio , Hiroki Sakamoto , Masayuki Kitano , Masatoshi Kudo
发明人： Tokuzo Arao , Kazuko Matsumoto , Kazuto Nishio , Hiroki Sakamoto , Masayuki Kitano , Masatoshi Kudo
IPC分类号： C12Q1/37 , C12Q1/34
CPC分类号： G01N33/57438 , Y10T436/24
摘要： The present invention is to provide a novel marker for diagnosing pancreatic cancer, a method for determining if a subject has pancreatic cancer utilizing the marker, etc. The present inventors collected blood from patients of 78 cases in total including patients of 24 cases with pancreaticobiliary-duct benign disorder (16 gallstone cases and 8 pancreatitis cases) and patients of 54 cases with pancreatic cancer, and mass spectrometry was performed on N-linked sugar chains in plasma. From the 74 mass-spectrometric peaks detected, 65 sugar chains were extracted based on the results of PAM analysis. These extracted sugar chains were then used to predict pancreatic cancer or pancreaticobiliary-duct benign disorder, to correctly diagnose 74% cases. Further, a T-test was performed between the two groups, the group of pancreaticobiliary-duct benign disorder and the group of pancreatic cancer, which identified two sugar chains, the sugar chain of m/z 3031 and the sugar chain of m/z 2362, as sugar chains demonstrating significant difference (p
摘要翻译：本发明提供一种用于诊断胰腺癌的新型标记物，用于确定受试者是否使用标记物的胰腺癌的方法等。本发明人从78例患者中收集了总共包括24例胰腺胆管癌患者的血液，膀胱良性疾病（16例胆囊病例和8例胰腺炎病例）和54例胰腺癌患者，并对血浆中的N链糖链进行质谱分析。根据PAM分析结果，从检测到的74个质谱峰中提取出65个糖链。然后将这些提取的糖链用于预测胰腺癌或胰胆管良性疾病，以正确诊断74％的病例。此外，在两组之间进行T检验，即胰胆管良性病变组和胰腺癌组，鉴定了两条糖链，m / z 3031的糖链和m / z的糖链 2362，由于糖链显示出显着性差异（p <0.05），并且两组之间的表达水平呈现2倍或更大的差异。使用这些糖链的正确检测率用六个分类器计算，所有这些分类器都得到约70％的正确检测结果。

7. 发明申请

US20100172792A1 STRESS-BUFFERING MATERIAL 有权
标题翻译：应力缓冲材料
公开(公告)号：US20100172792A1
公开(公告)日：2010-07-08
申请号：US12676271
申请日：2008-09-11
申请人： Fumihiko Gejima , Hiroki Sakamoto , Mamoru Sayashi
发明人： Fumihiko Gejima , Hiroki Sakamoto , Mamoru Sayashi
IPC分类号： C22C21/00 , C22C21/10
CPC分类号： C22C21/00 , B22F2998/10 , C22C1/0416 , C22C1/0491 , C22F1/04 , C22F1/053 , B22F9/082 , B22F3/20
摘要： Inventors of the present invention have found that, by manufacturing a stress-buffering material with a Ca-containing aluminum alloy including 0.1 to 12 at % of Ca, the stress-buffering material at low cost, capable of expanding its use in various fields, and having low Young's modulus that is beyond a conventional level, can be obtain.
摘要翻译：本发明的发明人已经发现，通过使用包含0.1〜12at％的Ca的含Ca的铝合金制造应力缓冲材料，能够以各种领域扩大其应用的低成本的应力缓冲材料，并且可以获得超过常规水平的低杨氏模量。

8. 发明申请

US20080207654A1 HETEROMONOCYCLIC COMPOUND AND USE THEREOF 审中-公开
标题翻译：异环化合物及其用途
公开(公告)号：US20080207654A1
公开(公告)日：2008-08-28
申请号：US11943910
申请日：2007-11-21
申请人： Takanobu Kuroita , Hiroki Sakamoto , Hideyuki Igawa , Minoru Sasaki , Kouhei Asano , Tsuyoshi Maekawa
发明人： Takanobu Kuroita , Hiroki Sakamoto , Hideyuki Igawa , Minoru Sasaki , Kouhei Asano , Tsuyoshi Maekawa
IPC分类号： A61K31/506 , C07D239/22 , A61P3/10 , A61P3/04
CPC分类号： C07D413/14 , C07D413/10 , C07D417/14
摘要： A compound represented by the formula (I): wherein R1 is an oxo group, ═N—R or the like; a group represented by the formula: is a group represented by the formula: R2 is a group represented by the formula: R3 and R4 are each H, or C1-C6 alkyl, C3-C6 cycloalkyl, C1-C6 alkoxy, C1-C6 alkylamino, di(C1-C6)alkylamino or C1-C6 alkylthio, each of which is optionally substituted; and R5 is H, or C1-C6 alkyl, C2-C6 alkenyl, cyclic group, each of which is optionally substituted, —CO—R8 or —O—R8′, or a salt thereof. The compound of the present invention is useful as a drug for the prophylaxis or treatment of circulatory diseases, metabolic diseases and/or central nervous system diseases.
摘要翻译：由式（I）表示的化合物：其中R1是氧代基，-N-R等; 由下式表示的基团是由下式表示的基团：R 2是由下式表示的基团：R 3和R 4各自为H或C 1 -C 6烷基，C 3 -C 6环烷基，C 1 -C 6烷氧基，C 1 -C 6 烷基氨基，二（C 1 -C 6）烷基氨基或C 1 -C 6烷硫基，其各自任选被取代; 和R 5为H或C 1 -C 6烷基，C 2 -C 6烯基，环状基团，各自为任选取代的-CO-R 8或-O-R 8'或其盐。本发明的化合物可用作预防或治疗循环系统疾病，代谢疾病和/或中枢神经系统疾病的药物。

9. 发明申请

US20070010528A1 Thiazoline derivative and use of the same 失效
标题翻译：噻唑啉衍生物和使用相同
公开(公告)号：US20070010528A1
公开(公告)日：2007-01-11
申请号：US10574048
申请日：2004-09-29
申请人： Keiji Kubo , Takanobu Kuroita , Masaki Kawamura , Hiroki Sakamoto
发明人： Keiji Kubo , Takanobu Kuroita , Masaki Kawamura , Hiroki Sakamoto
IPC分类号： A61K31/496 , A61K31/454 , A61K31/426 , C07D417/02
CPC分类号： C07D417/06 , C07D277/42 , C07D417/04 , C07D417/12
摘要： A thiazoline derivative represented by Formula (I): wherein R is a cyclic hydrocarbon group which may be substituted, or a heterocyclic group which may be substituted; X is a bond or a divalent chain hydrocarbon group which may be substituted; X′ is a bond or —N(R5)—; Y is a divalent hydrocarbon group which may be substituted; Y′ is a bond or —C(═O)—; ring A is a nitrogen-containing heterocycle which may be substituted; Z1 and Z3 are each independently a bond or a divalent chain hydrocarbon group which may be substituted; Z2 is a bond or —N(R6)—; and B is a group represented by the formula: which is useful as a therapeutic drug for thrombosis, is provided.
摘要翻译：由式（I）表示的噻唑啉衍生物：其中R是可被取代的环状烃基或可被取代的杂环基; X是可以被取代的键或二价链烃基; X'是键或-N（R 5） - ; Y是可以被取代的二价烃基; Y'是键或-C（-O） - ; 环A是可以被取代的含氮杂环; Z 1和Z 3各自独立地为可以被取代的键或二价链烃基; Z 2是键或-N（R 6） - ; 并且B是由下式表示的基团：其可用作血栓形成的治疗药物。

10. 发明申请

US20060281795A1 Benzinidazole Derivative and Use As AII Receptor Antagonist 有权
标题翻译：苯硝唑衍生物和用作AII受体拮抗剂
公开(公告)号：US20060281795A1
公开(公告)日：2006-12-14
申请号：US11466633
申请日：2006-08-23
申请人： Takanobu Kuroita , Hiroki Sakamoto , Mami Ojima
发明人： Takanobu Kuroita , Hiroki Sakamoto , Mami Ojima
IPC分类号： A61K31/4245 , C07D413/02 , C07D413/14
CPC分类号： C07D413/14
摘要： The present invention relates to a compound represented by the formula (I) wherein R1 is a group represented by the formula wherein R2, R3, R4, R5, R6, R7 and R8 are each independently a hydrogen atom or a C1-6 alkyl, or a salt thereof. The compound of the present invention is useful as an agent for the prophylaxis or treatment of circulatory diseases such as hypertension and the like and metabolic diseases such as diabetes and the like.
摘要翻译：本发明涉及由式（I）表示的化合物，其中R 1为由下式表示的基团：其中R 2，R 3， R 4，R 5，R 6，R 7和R 8，R 8， >各自独立地为氢原子或C 1-6烷基，或其盐。本发明的化合物可用作预防或治疗诸如高血压等循环系统疾病和糖尿病等代谢疾病的药剂。

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