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    • 1. 发明授权
    • Non-reciprocal circuit element
    • 不可逆电路元件
    • US5786736A
    • 1998-07-28
    • US713977
    • 1996-09-13
    • Hiroki DejimaTakashi HasegawaYutaka IshiuraYoshikazu ChigodouHiroshi MatsuiKeiji Ogawa
    • Hiroki DejimaTakashi HasegawaYutaka IshiuraYoshikazu ChigodouHiroshi MatsuiKeiji Ogawa
    • H01P1/387H01P1/383
    • H01P1/387
    • A non-reciprocal circuit element which can be miniaturized while still providing a matching capacitance having a large value. A circulator, for example, has central electrodes and a multilayer substrate for forming a matching capacitance. The multilayer substrate is formed by stacking a plurality of dielectric sheets provided with central electrodes or matching capacitive electrodes with each other and integrally firing the same. The matching capacitance is formed by connecting multilayer capacitive parts which are formed by stacking a number of dielectric sheets which are each partially sandwiched by a pair of capacitive electrodes in parallel with each other. An upper surface of the multilayer substrate has a first aperture for receiving a ferrite member and a second aperture for receiving a permanent magnet in positions facing the central electrodes.
    • 一种不可逆电路元件,其可以在仍然提供具有大值的匹配电容的同时小型化。 例如,循环器具有中心电极和用于形成匹配电容的多层衬底。 多层基板通过将设置有中心电极或匹配的电容电极的多个电介质层叠并且一体地烧结而形成。 匹配电容是通过层叠多个电介质层而形成的,所述多层电容部分通过层叠彼此平行的由一对电容电极部分夹在中间的多个电介质片而形成。 多层基板的上表面具有用于接收铁氧体部件的第一孔和用于在面向中心电极的位置中接收永磁体的第二孔。
    • 5. 发明授权
    • Semiconductor protection device against abnormal voltage
    • 半导体保护装置防止异常电压
    • US5274253A
    • 1993-12-28
    • US737397
    • 1991-07-29
    • Keiji Ogawa
    • Keiji Ogawa
    • H01L29/73H01L21/331H01L27/02H01L29/06H01L29/87H01L29/74
    • H01L29/0626H01L27/0248H01L29/87
    • The semiconductor protection device has a p.sup.+ -n.sup.- -p-n.sup.+ layer construction, and an n type impurity diffusion region is selectively formed in a surface portion of the pn junction. This n type impurity diffusion region is formed in a linear planar portion where substantially no electric field concentration is generated when a reverse voltage is applied to the pn junction formed between the n.sup.- type semiconductor region and the p type semiconductor region. Further, an electrode is provided in ohmic contact with both of the p type semiconductor region and the n.sup.+ type semiconductor region. This electrode is selectively made in contact with the p type semiconductor region at a position remote from the n type impurity diffusion region and adjacent to a curved planar portion of the pn junction where the electric field concentration tends to occur when a reverse voltage is applied to the pn junction formed between the n.sup.- type semiconductor region and the p type semiconductor region.
    • 半导体保护器件具有p + -n-p-n +层结构,并且在pn结的表面部分中选择性地形成n型杂质扩散区域。 该n型杂质扩散区域形成在线性平面部分中,当对n型半导体区域和p型半导体区域之间形成的pn结施加反向电压时,基本上不产生电场浓度。 此外,电极被提供为与p型半导体区域和n +型半导体区域二者欧姆接触。 该电极在远离n型杂质扩散区域的位置与p型半导体区域选择性地接触,并且邻近pn结的弯曲平面部分,当反向电压施加到电场浓度时 在n型半导体区域和p型半导体区域之间形成的pn结。