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1. 发明授权

US5663077A Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films 失效
标题翻译：制造其中栅极绝缘体包括两个氧化物膜的薄膜晶体管的方法
公开(公告)号：US5663077A
公开(公告)日：1997-09-02
申请号：US280461
申请日：1994-07-26
申请人： Hiroki Adachi , Akira Takenouchi , Takeshi Fukada , Hiroshi Uehara , Yasuhiko Takemura
发明人： Hiroki Adachi , Akira Takenouchi , Takeshi Fukada , Hiroshi Uehara , Yasuhiko Takemura
IPC分类号： H01L21/28 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/45 , H01L29/49
CPC分类号： H01L29/66757 , H01L21/28158 , H01L27/1214 , H01L29/4908 , H01L29/458
摘要： A method for manufacturing a semiconductor device comprises the steps of forming a semiconductor film on a substrate, oxidizing a surface of said semiconductor film in an oxidizing atmosphere with said semiconductor film heated or irradiated with light, and further depositing an oxide film on the oxidized surface of the semiconductor film by PVD or CVD. The first oxide film has a good interface condition with the semiconductor film and a characteristics of an insulated gate field effect transistor can be improved if the first oxide film and the second oxide film are used as a gate insulating film.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在衬底上形成半导体膜，在氧化气氛中用加热或照射的半导体膜氧化所述半导体膜的表面，并进一步在氧化表面上沉积氧化膜的半导体膜。第一氧化物膜与半导体膜具有良好的界面条件，并且如果第一氧化物膜和第二氧化物膜用作栅极绝缘膜，则可以改善绝缘栅场效应晶体管的特性。

2. 发明授权

US06210997B1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06210997B1
公开(公告)日：2001-04-03
申请号：US09362040
申请日：1999-07-28
申请人： Hiroki Adachi , Akira Takenouchi , Takeshi Fukada , Hiroshi Uehara , Yasuhiko Takemura
发明人： Hiroki Adachi , Akira Takenouchi , Takeshi Fukada , Hiroshi Uehara , Yasuhiko Takemura
IPC分类号： H01L21336
CPC分类号： H01L27/1277 , H01L21/28158 , H01L27/1214 , H01L29/458 , H01L29/4908 , H01L29/66757
摘要： A method for manufacturing a semiconductor device comprises the steps of forming a semiconductor film on a substrate, oxidizing a surface of said semiconductor film in an oxidizing atmosphere with said semiconductor film heated or irradiated with light, and further depositing an oxide film on the oxidized surface of the semiconductor film by PVD or CVD. The first oxide film has a good interface condition with the semiconductor film and a characteristics of an insulated gate field effect transistor can be improved if the first oxide-film and the second oxide film are used as a gate insulating film.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在衬底上形成半导体膜，在氧化气氛中用加热或照射的半导体膜氧化所述半导体膜的表面，并进一步在氧化表面上沉积氧化膜的半导体膜。第一氧化膜与半导体膜具有良好的界面条件，并且如果第一氧化膜和第二氧化物膜用作栅极绝缘膜，则可以改善绝缘栅场效应晶体管的特性。

3. 发明授权

US5966594A Semiconductor device and method for manufacturing the same 失效
公开(公告)号：US5966594A
公开(公告)日：1999-10-12
申请号：US768465
申请日：1996-12-18
申请人： Hiroki Adachi , Akira Takenouchi , Takeshi Fukada , Hiroshi Uehara , Yasuhiko Takemura
发明人： Hiroki Adachi , Akira Takenouchi , Takeshi Fukada , Hiroshi Uehara , Yasuhiko Takemura
IPC分类号： H01L21/28 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/45 , H01L29/49 , H01L21/00
CPC分类号： H01L29/66757 , H01L21/28158 , H01L27/1214 , H01L29/4908 , H01L29/458
摘要： A method for manufacturing a semiconductor device comprises the steps of forming a semiconductor film on a substrate, oxidizing a surface of said semiconductor film in an oxidizing atmosphere with said semiconductor film heated or irradiated with light, and further depositing an oxide film on the oxidized surface of the semiconductor film by PVD or CVD. The first oxide film has a good interface condition with the semiconductor film and a characteristics of an insulated gate field effect transistor can be improved if the first oxide film and the second oxide film are used as a gate insulating film.

4. 发明授权

US06171890B2 Method for manufacturing a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US06171890B2
公开(公告)日：2001-01-09
申请号：US09421229
申请日：1999-10-20
申请人： Hiroki Adachi , Akira Takenouchi , Yasuhiko Takemura
发明人： Hiroki Adachi , Akira Takenouchi , Yasuhiko Takemura
IPC分类号： H01L2100
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L21/2026
摘要： A method for forming a silicon island used for forming a TFT or thin film diode comprises the step of pattering a silicon film with a photoresist mask. In order to prevent the contamination of the semiconductor film due to the photoresist material, a protective film such as silicon oxide is interposed between the semiconductor film and the photoresist film. Also, the protective film is preferably formed by thermal annealing or light annealing in an oxidizing atmosphere.
摘要翻译：用于形成用于形成TFT或薄膜二极管的硅岛的方法包括用光致抗蚀剂掩模图案化硅膜的步骤。为了防止由于光致抗蚀剂材料而导致的半导体膜的污染，在半导体膜和光致抗蚀剂膜之间插入氧化硅等保护膜。此外，保护膜优选通过在氧化气氛中的热退火或轻退火形成。

5. 发明授权

US06599359B2 Method for manufacturing a semiconductor device 失效
公开(公告)号：US06599359B2
公开(公告)日：2003-07-29
申请号：US09734034
申请日：2000-12-12
申请人： Hiroki Adachi , Akira Takenouchi , Yasuhiko Takemura
发明人： Hiroki Adachi , Akira Takenouchi , Yasuhiko Takemura
IPC分类号： C30B3302
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L21/2026
摘要： A method for forming a silicon island used for forming a TFT or thin film diode comprises the step of pattering a silicon film with a photoresist mask. In order to prevent the contamination of the semiconductor film due to the photoresist material, a protective film such as silicon oxide is interposed between the semiconductor film and the photoresist film. Also, the protective film is preferably formed by thermal annealing or light annealing in an oxidizing atmosphere.

6. 发明授权

US06465284B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06465284B2
公开(公告)日：2002-10-15
申请号：US09779829
申请日：2001-02-09
申请人： Hiroki Adachi , Akira Takenouchi , Takeshi Fukada , Hiroshi Uehara , Yasuhiko Takemura
发明人： Hiroki Adachi , Akira Takenouchi , Takeshi Fukada , Hiroshi Uehara , Yasuhiko Takemura
IPC分类号： H01L2184
CPC分类号： H01L27/1277 , H01L21/28158 , H01L27/1214 , H01L29/458 , H01L29/4908 , H01L29/66757
摘要： A method for manufacturing a semiconductor device comprises the steps of forming a semiconductor film on a substrate, oxidizing a surface of said semiconductor film in an oxidizing atmosphere with said semiconductor film heated or irradiated with light, and further depositing an oxide film on the oxidized surface of the semiconductor film by PVD or CVD. The first oxide film has a good interface condition with the semiconductor film and a characteristics of an insulated gate field effect transistor can be improved if the first oxide film and the second oxide film are used as a gate insulating film.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在衬底上形成半导体膜，在氧化气氛中用加热或照射的半导体膜氧化所述半导体膜的表面，并进一步在氧化表面上沉积氧化膜的半导体膜。第一氧化物膜与半导体膜具有良好的界面条件，并且如果第一氧化物膜和第二氧化物膜用作栅极绝缘膜，则可以改善绝缘栅场效应晶体管的特性。

7. 发明授权

US5985704A Method for manufacturing a semiconductor device 失效
公开(公告)号：US5985704A
公开(公告)日：1999-11-16
申请号：US568792
申请日：1995-12-07
申请人： Hiroki Adachi , Akira Takenouchi , Yasuhiko Takemura
发明人： Hiroki Adachi , Akira Takenouchi , Yasuhiko Takemura
IPC分类号： H01L21/20 , H01L21/84
CPC分类号： H01L21/2026 , H01L21/2022
摘要： A method for forming a silicon island used for forming a TFT or thin film diode comprises the step of pattering a silicon film with a photoresist mask. In order to prevent the contamination of the semiconductor film due to the photoresist material, a protective film such as silicon oxide is interposed between the semiconductor film and the photoresist film. Also, the protective film is preferably formed by thermal annealing or light annealing in an oxidizing atmosphere.

8. 发明授权

US06841432B1 Semiconductor device and process for fabricating the same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US06841432B1
公开(公告)日：2005-01-11
申请号：US09321715
申请日：1999-05-28
申请人： Yasuhiko Takemura , Hiroki Adachi
发明人： Yasuhiko Takemura , Hiroki Adachi
IPC分类号： H01L21/762 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/04 , H01L29/78 , H01L29/786 , H01L21/20 , H01L21/441
CPC分类号： H01L29/78618 , H01L27/12 , H01L27/1248 , H01L27/1277 , H01L29/04 , H01L29/4908 , H01L29/66757 , H01L29/78609
摘要： A semiconductor device comprising at least two thin film transistors on a substrate having an insulating surface thereon, provided that the thin film transistors are isolated by oxidizing the outer periphery of the active layer of each of the thin film transistors to the bottom to provide an oxide insulating film.
摘要翻译：一种半导体器件，包括在其上具有绝缘表面的衬底上的至少两个薄膜晶体管，条件是薄膜晶体管通过将每个薄膜晶体管的有源层的外周氧化为底部而分离，以提供氧化物绝缘膜。

9. 发明授权

US5661311A Semiconductor device and process for fabricating the same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US5661311A
公开(公告)日：1997-08-26
申请号：US671499
申请日：1996-06-27
申请人： Yasuhiko Takemura , Hiroki Adachi
发明人： Yasuhiko Takemura , Hiroki Adachi
IPC分类号： H01L21/762 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/04 , H01L29/78 , H01L29/786
CPC分类号： H01L29/78618 , H01L27/12 , H01L27/1248 , H01L27/1277 , H01L29/04 , H01L29/4908 , H01L29/66757 , H01L29/78609
摘要： A semiconductor device comprising at least two thin film transistors on a substrate having an insulating surface thereon, provided that the thin film transistors are isolated by oxidizing the outer periphery of the active layer of each of the thin film transistors to the bottom to provide an oxide insulating film.
摘要翻译：一种半导体器件，包括在其上具有绝缘表面的衬底上的至少两个薄膜晶体管，条件是薄膜晶体管通过将每个薄膜晶体管的有源层的外周氧化为底部而分离，以提供氧化物绝缘膜。

10. 发明授权

US5650338A Method for forming thin film transistor 失效
标题翻译：薄膜晶体管的形成方法
公开(公告)号：US5650338A
公开(公告)日：1997-07-22
申请号：US216277
申请日：1994-03-23
申请人： Shunpei Yamazaki , Hongyong Zhang , Hideki Uochi , Hiroki Adachi , Yasuhiko Takemura
发明人： Shunpei Yamazaki , Hongyong Zhang , Hideki Uochi , Hiroki Adachi , Yasuhiko Takemura
IPC分类号： H01L21/336 , H01L21/84
CPC分类号： H01L27/1214 , H01L29/66757
摘要： In film forming of thin film semiconductors (TFTs), a gate electrode having an anodic-oxidizable material is formed on a substrate, and the surface of the gate electrode is oxidized by anodic oxidation in an electrolytic solution so that the surface of the gate electrode is coated with an insulating film. The doping is performed using the gate electrode and the anodic oxide film as a mask, to form a source and a drain region. Then, when the laminate is again dipped in an electrolytic solution, and a voltage is applied to the gate electrode so that a current curing produces in the laminate. During the current curing, a positive voltage is preferably applied to the gate electrode for N-channel TFTs and a negative voltage is preferably to the gate electrode for P-channel TFTs. After the doping, the source and the drain region is activated by laser annealing or the like, prior to the current curing.
摘要翻译：在薄膜半导体（TFT）的成膜中，在基板上形成具有阳极氧化材料的栅电极，并且通过电解液中的阳极氧化使栅电极的表面氧化，使得栅电极的表面涂有绝缘膜。使用栅电极和阳极氧化膜作为掩模进行掺杂，以形成源区和漏区。然后，当层叠体再次浸渍在电解液中时，向栅电极施加电压，使得层压体产生电流固化。在电流固化期间，优选对N沟道TFT的栅电极施加正电压，对P沟道TFT优选施加负电压。在掺杂之后，在目前的固化之前，源极和漏极区域被激光退火等激活。

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