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1. 发明授权

US08530146B2 Method for forming resist pattern 有权
标题翻译：形成抗蚀剂图案的方法
公开(公告)号：US08530146B2
公开(公告)日：2013-09-10
申请号：US13357618
申请日：2012-01-25
申请人： Hirokazu Sakakibara , Hiromu Miyata , Koji Ito , Taiichi Furukawa
发明人： Hirokazu Sakakibara , Hiromu Miyata , Koji Ito , Taiichi Furukawa
IPC分类号： G03F7/26
CPC分类号： G03F7/20 , G03F7/0046 , G03F7/0397 , G03F7/2041 , G03F7/325
摘要： A radiation-sensitive resin composition includes an acid-labile group-containing polymer and photoacid generator. The radiation-sensitive resin composition is used to form a resist pattern using a developer that includes an organic solvent in an amount of 80 mass % or more. The radiation-sensitive resin composition has a contrast value γ of 5.0 to 30.0. The contrast value γ is calculated from a resist dissolution contrast curve obtained when developing the radiation-sensitive resin composition using the organic solvent.
摘要翻译：辐射敏感性树脂组合物包括含酸不稳定基团的聚合物和光酸产生剂。辐射敏感性树脂组合物用于使用包含80质量％以上的有机溶剂的显影剂形成抗蚀剂图案。辐射敏感性树脂组合物的对比度值γ值为5.0〜30.0。从使用有机溶剂显影辐射敏感性树脂组合物时获得的抗蚀剂溶出度对比曲线计算对比度值γ。

2. 发明申请

US20120183908A1 RESIST PATTERN-FORMING METHOD 有权
标题翻译：电阻形成方法
公开(公告)号：US20120183908A1
公开(公告)日：2012-07-19
申请号：US13434851
申请日：2012-03-30
申请人： Yusuke ANNO , Takashi Mori , Hirokazu Sakakibara , Taiichi Furukawa , Kazunori Takanashi , Hiromitsu Tanaka , Shin-ya Minegishi
发明人： Yusuke ANNO , Takashi Mori , Hirokazu Sakakibara , Taiichi Furukawa , Kazunori Takanashi , Hiromitsu Tanaka , Shin-ya Minegishi
IPC分类号： G03F7/20
CPC分类号： G03F7/16 , G03F7/0397 , G03F7/0751 , G03F7/0752 , G03F7/091 , G03F7/094 , G03F7/20 , G03F7/30 , G03F7/325
摘要： A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.
摘要翻译：抗蚀剂图案形成方法包括将抗蚀剂下层膜形成组合物施加到基底上以形成抗蚀剂下层膜。抗蚀剂下层膜形成组合物包含（A）聚硅氧烷。将抗辐射敏感树脂组合物施加到抗蚀剂下层膜上以形成抗蚀剂膜。辐射敏感性树脂组合物包含（a1）由于酸而导致极性变化和在有机溶剂中溶解度降低的聚合物。抗蚀剂膜被曝光。使用包含有机溶剂的显影剂显影曝光的抗蚀剂膜。

3. 发明授权

US08703401B2 Method for forming pattern and developer 有权
标题翻译：形成图案和显影剂的方法
公开(公告)号：US08703401B2
公开(公告)日：2014-04-22
申请号：US13177487
申请日：2011-07-06
申请人： Taiichi Furukawa , Hirokazu Sakakibara
发明人： Taiichi Furukawa , Hirokazu Sakakibara
IPC分类号： G03F7/26
CPC分类号： G03F7/325 , G03F7/0046 , G03F7/0397 , G03F7/2041 , G03F7/327
摘要： A pattern-forming method includes forming a resist film on a substrate using a photoresist composition, exposing the resist film, and developing the exposed resist film using a negative developer that includes an organic solvent. The photoresist composition includes (A) a polymer that includes a structural unit (I) including an acid-labile group that dissociates due to an acid, the solubility of the polymer in the developer decreasing upon dissociation of the acid-labile group, and (B) a photoacid generator. The developer includes a nitrogen-containing compound.
摘要翻译：图案形成方法包括使用光致抗蚀剂组合物在基板上形成抗蚀剂膜，曝光抗蚀剂膜，并使用包含有机溶剂的负显影剂显影曝光的抗蚀剂膜。光致抗蚀剂组合物包括（A）包含结构单元（I）的聚合物，该结构单元（I）包含由酸引起的解离的酸不稳定基团，在酸不稳定基团解离时聚合物在显影剂中的溶解度降低;和 B）光致酸发生器。显影剂包括含氮化合物。

4. 发明授权

US08669042B2 Resist pattern-forming method 有权
标题翻译：抗蚀图案形成方法
公开(公告)号：US08669042B2
公开(公告)日：2014-03-11
申请号：US13434851
申请日：2012-03-30
申请人： Yusuke Anno , Takashi Mori , Hirokazu Sakakibara , Taiichi Furukawa , Kazunori Takanashi , Hiromitsu Tanaka , Shin-ya Minegishi
发明人： Yusuke Anno , Takashi Mori , Hirokazu Sakakibara , Taiichi Furukawa , Kazunori Takanashi , Hiromitsu Tanaka , Shin-ya Minegishi
IPC分类号： G03F7/26
CPC分类号： G03F7/16 , G03F7/0397 , G03F7/0751 , G03F7/0752 , G03F7/091 , G03F7/094 , G03F7/20 , G03F7/30 , G03F7/325
摘要： A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.
摘要翻译：抗蚀剂图案形成方法包括将抗蚀剂下层膜形成组合物施加到基底上以形成抗蚀剂下层膜。抗蚀剂下层膜形成组合物包含（A）聚硅氧烷。将抗辐射敏感树脂组合物施加到抗蚀剂下层膜上以形成抗蚀剂膜。辐射敏感性树脂组合物包含（a1）由于酸而导致极性变化和在有机溶剂中溶解度降低的聚合物。抗蚀剂膜被曝光。使用包含有机溶剂的显影剂显影曝光的抗蚀剂膜。

5. 发明授权

US08168691B2 Vinyl ether resist formulations for imprint lithography and processes of use 有权
标题翻译：乙烯基醚抗蚀剂配方用于压印光刻和使用过程
公开(公告)号：US08168691B2
公开(公告)日：2012-05-01
申请号：US12367654
申请日：2009-02-09
申请人： Frances A. Houle , Taiichi Furukawa
发明人： Frances A. Houle , Taiichi Furukawa
IPC分类号： C09D4/00 , G03F7/00
CPC分类号： C09D4/00
摘要： Coating compositions suitable for UV imprint lithographic applications are disclosed that include at least one vinyl ether crosslinker having at least two vinyl ether groups; at least one diluent comprising a monofunctional vinyl ether compound; and at least one photoacid generator soluble in a selected one or both of the at least one monofunctional ether compound and the at least one vinyl ether compound, wherein the at least one monofunctional ether compound and the at least one vinyl ether compound are free from fluorine and silicon substituents. Also disclosed are imprint processes.
摘要翻译：公开了适用于UV印迹光刻应用的涂料组合物，其包括至少一种具有至少两个乙烯基醚基团的乙烯基醚交联剂; 至少一种包含单官能乙烯基醚化合物的稀释剂; 和至少一种可溶于所述至少一种单官能醚化合物和所述至少一种乙烯基醚化合物中选定的一种或两种的光致酸产生剂，其中所述至少一种单官能醚化合物和所述至少一种乙烯基醚化合物不含氟和硅取代基。还公开了压印过程。

6. 发明申请

US20100201043A1 VINYL ETHER RESIST FORMULATIONS FOR IMPRINT LITHOGRAPHY AND PROCESSES OF USE 有权
标题翻译：用于印刷图形和用途的VINYL醚类制剂
公开(公告)号：US20100201043A1
公开(公告)日：2010-08-12
申请号：US12367654
申请日：2009-02-09
申请人： Frances A. Houle , Taiichi Furukawa
发明人： Frances A. Houle , Taiichi Furukawa
IPC分类号： B29C35/08 , C08L29/10
CPC分类号： C09D4/00
摘要： Coating compositions suitable for UV imprint lithographic applications are disclosed that include at least one vinyl ether crosslinker having at least two vinyl ether groups; at least one diluent comprising a monofunctional vinyl ether compound; and at least one photoacid generator soluble in a selected one or both of the at least one monofunctional ether compound and the at least one vinyl ether compound, wherein the at least one monofunctional ether compound and the at least one vinyl ether compound are free from fluorine and silicon substituents. Also disclosed are imprint processes.
摘要翻译：公开了适用于UV印迹光刻应用的涂料组合物，其包括至少一种具有至少两个乙烯基醚基团的乙烯基醚交联剂; 至少一种包含单官能乙烯基醚化合物的稀释剂; 和至少一种可溶于所述至少一种单官能醚化合物和所述至少一种乙烯基醚化合物中选定的一种或两种的光致酸产生剂，其中所述至少一种单官能醚化合物和所述至少一种乙烯基醚化合物不含氟和硅取代基。还公开了压印过程。

7. 发明授权

US08168109B2 Stabilizers for vinyl ether resist formulations for imprint lithography 有权
标题翻译：用于压印光刻的乙烯基醚抗蚀剂配方的稳定剂
公开(公告)号：US08168109B2
公开(公告)日：2012-05-01
申请号：US12545161
申请日：2009-08-21
申请人： Frances A. Houle , Sally A. Swanson , Taiichi Furukawa
发明人： Frances A. Houle , Sally A. Swanson , Taiichi Furukawa
IPC分类号： B29C35/08 , B29C59/02 , G03F7/004
CPC分类号： G03F7/027 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： Coating compositions suitable for UV imprint lithographic applications include at least one vinyl ether crosslinker having at least two vinyl ether groups; at least one diluent comprising a monofunctional vinyl ether compound; at least one photoacid generator soluble in a selected one or both of the at least one monofunctional vinyl ether compound and the at least one vinyl ether crosslinker having the at least two vinyl ether groups; and at least one stabilizer comprising an ester compound selectively substituted with a substituent at an ester position or an alpha and the ester positions. Also disclosed are imprint processes.
摘要翻译：适用于UV印迹光刻应用的涂料组合物包括至少一种具有至少两个乙烯基醚基团的乙烯基醚交联剂; 至少一种包含单官能乙烯基醚化合物的稀释剂; 所述至少一种光致酸产生剂可溶于所述至少一种单官能乙烯基醚化合物和所述至少一种具有所述至少两个乙烯基醚基团的乙烯基醚交联剂中选定的一种或两种; 和至少一种稳定剂，其包含在酯位或α位选择性地被取代基取代的酯化合物。还公开了压印过程。

8. 发明申请

US20110042862A1 Stabilizers for Vinyl Ether Resist Formulations for Imprint Lithography 有权
标题翻译：用于印记平版印刷的乙烯基醚抗蚀剂配方的稳定剂
公开(公告)号：US20110042862A1
公开(公告)日：2011-02-24
申请号：US12545161
申请日：2009-08-21
申请人： Frances A. Houle , Sally A. Swanson , Taiichi Furukawa
发明人： Frances A. Houle , Sally A. Swanson , Taiichi Furukawa
IPC分类号： B29C35/08 , B29C59/02 , G03F7/004
CPC分类号： G03F7/027 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： Coating compositions suitable for UV imprint lithographic applications include at least one vinyl ether crosslinker having at least two vinyl ether groups; at least one diluent comprising a monofunctional vinyl ether compound; at least one photoacid generator soluble in a selected one or both of the at least one monofunctional vinyl ether compound and the at least one vinyl ether crosslinker having the at least two vinyl ether groups; and at least one stabilizer comprising an ester compound selectively substituted with a substituent at an ester position or an alpha and the ester positions. Also disclosed are imprint processes.
摘要翻译：适用于UV印迹光刻应用的涂料组合物包括至少一种具有至少两个乙烯基醚基团的乙烯基醚交联剂; 至少一种包含单官能乙烯基醚化合物的稀释剂; 所述至少一种光致酸产生剂可溶于所述至少一种单官能乙烯基醚化合物和所述至少一种具有所述至少两个乙烯基醚基团的乙烯基醚交联剂中选定的一种或两种; 和至少一种稳定剂，其包含在酯位或α位选择性地被取代基取代的酯化合物。还公开了压印过程。

9. 发明申请

US20080129970A1 Immersion Exposure System, and Recycle Method and Supply Method of Liquid for Immersion Exposure 审中-公开
标题翻译：浸没曝光系统，以及用于浸没曝光的液体的回收方法和供应方法
公开(公告)号：US20080129970A1
公开(公告)日：2008-06-05
申请号：US11795809
申请日：2006-01-20
申请人： Taiichi Furukawa , Katsuhiko Hieda , Yakashi Miyamatsu , Yong Wang , Kinji Yamada
发明人： Taiichi Furukawa , Katsuhiko Hieda , Yakashi Miyamatsu , Yong Wang , Kinji Yamada
IPC分类号： G03B27/42 , H01L21/027 , G03F7/038 , G03B27/52 , G03F7/20
CPC分类号： G03F7/70341
摘要： An immersion exposure system 1 performs an exposure process through a liquid 301 provided between an optical element of a projection optical means 121 and a substrate 111. The immersion exposure system 1 includes a liquid supply section 80 which supplies the liquid 301, an exposure section to which the liquid 301 (301b) supplied from the liquid supply section 80 is continuously introduced along a specific direction and which performs an exposure process in a state in which a space between the optical element of the projection optical means 121 and the substrate 111 is filled with the liquid 301, a liquid recovery section 90 which recovers the liquid 301 (301a) passed through the exposure section 110 at a symmetrical position against the substrate 111, and a liquid recycling section 20 which recycles the liquid 301 (301c) recovered by the liquid recovery section 90. The properties of the immersion exposure liquid can be stabilized when applying an immersion method, whereby exposure can be advantageously and continuously performed, and running cost can be reduced.
摘要翻译：浸没曝光系统1通过设置在投影光学装置121的光学元件和基板111之间的液体301进行曝光处理。浸没曝光系统1包括供给液体301的液体供给部80，从液体供给部80供给的液体301（301b）沿特定方向连续导入的曝光部，并进行曝光处理投影光学装置121的光学元件和基板111之间的空间被液体301填充的状态，使液体301（301a）以对称的方式通过曝光部110的液体回收部90 与液体回收部90回收的液体301（301c）的液体再循环部20。浸渍曝光液体的性质可以通过浸渍法稳定化，可以有利且连续地进行曝光，能够降低运转成本。

10. 发明申请

US20070156003A1 Method for producing saturated hydrocarbon compound 审中-公开
标题翻译：饱和烃化合物的制备方法
公开(公告)号：US20070156003A1
公开(公告)日：2007-07-05
申请号：US11635660
申请日：2006-12-08
申请人： Taiichi Furukawa , Yong Wang , Kinji Yamada
发明人： Taiichi Furukawa , Yong Wang , Kinji Yamada
IPC分类号： C07C7/17
CPC分类号： C07C7/171 , C07C2602/28 , C07C13/50
摘要： A method for treating a saturated hydrocarbon compound suitable as a liquid for the immersion exposure method excelling in transmission in the deep ultraviolet region using sulfuric acid in an amount smaller than in a conventional method is provided. The above sulfuric acid washing treatment is the method for producing saturated hydrocarbon compound intended to reduce the absorbance, wherein the second sulfuric acid washing treatment step is conducted after the first sulfuric acid washing treatment step at a temperature 10° C. or more lower than the temperature of the first sulfuric acid washing treatment step. The absorbance of light with a wavelength of 193 nm of the saturated hydrocarbon compound to be treated in the above second sulfuric acid washing treatment step is 0.10 or less per 1 cm of a liquid optical path length, and the above saturated hydrocarbon compound is an alicyclic saturated hydrocarbon compound.
摘要翻译：提供一种处理适合作为浸渍曝光方法的饱和烃化合物的方法，其中使用比常规方法更小的硫酸，在深紫外区域中透射性优异。上述硫酸洗涤处理是制造用于降低吸光度的饱和烃化合物的方法，其中第二硫酸洗涤处理步骤在第一硫酸洗涤处理步骤之后在10℃以上的温度下进行第一硫酸洗涤处理步骤的温度。在上述第二硫酸洗涤处理步骤中，待处理的饱和烃化合物的波长为193nm的光的吸光度为每1cm液体光程长度为0.10以下，上述饱和烃化合物为脂环式饱和烃化合物。

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