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    • 7. 发明授权
    • SRAM device having four tunneling transistors connected to a flip-flop
    • 具有连接到触发器的四个隧道晶体管的SRAM器件
    • US08872275B2
    • 2014-10-28
    • US13368632
    • 2012-02-08
    • Hiroki SasakiKeisuke Nakatsuka
    • Hiroki SasakiKeisuke Nakatsuka
    • H01L21/70G11C11/412H01L27/11
    • G11C11/412H01L27/1108
    • An SRAM device has a first tunnel transistor that allows a current to flow in a direction from the non-inverting output terminal to the first bit line when the first tunnel transistor turns on. The SRAM device has a second tunnel transistor allows a current to flow in a direction from the first bit line to the non-inverting output terminal when the second tunnel transistor turns on. The SRAM device has a third tunnel transistor allows a current to flow in a direction from the inverting output terminal to the second bit line when the third tunnel transistor turns on. The SRAM device has a fourth tunnel transistor allows a current to flow in a direction from the second bit line to the inverting output terminal when the fourth tunnel transistor turns on.
    • 当第一隧道晶体管导通时,SRAM器件具有第一隧道晶体管,其允许电流在从非反相输出端子到第一位线的方向上流动。 当第二隧道晶体管导通时,SRAM器件具有第二隧道晶体管,允许电流在从第一位线到非反相输出端的方向上流动。 当第三隧道晶体管导通时,SRAM器件具有第三隧道晶体管,允许电流在从反相输出端子到第二位线的方向上流动。 当第四隧道晶体管导通时,SRAM器件具有第四隧道晶体管,允许电流在从第二位线到反相输出端的方向上流动。
    • 8. 发明申请
    • SRAM DEVICE
    • SRAM设备
    • US20120326239A1
    • 2012-12-27
    • US13368632
    • 2012-02-08
    • Hiroki SasakiKeisuke Nakatsuka
    • Hiroki SasakiKeisuke Nakatsuka
    • H01L27/11
    • G11C11/412H01L27/1108
    • An SRAM device has a first tunnel transistor that allows a current to flow in a direction from the non-inverting output terminal to the first bit line when the first tunnel transistor turns on. The SRAM device has a second tunnel transistor allows a current to flow in a direction from the first bit line to the non-inverting output terminal when the second tunnel transistor turns on. The SRAM device has a third tunnel transistor allows a current to flow in a direction from the inverting output terminal to the second bit line when the third tunnel transistor turns on. The SRAM device has a fourth tunnel transistor allows a current to flow in a direction from the second bit line to the inverting output terminal when the fourth tunnel transistor turns on.
    • 当第一隧道晶体管导通时,SRAM器件具有第一隧道晶体管,其允许电流在从非反相输出端子到第一位线的方向上流动。 当第二隧道晶体管导通时,SRAM器件具有第二隧道晶体管,允许电流在从第一位线到非反相输出端的方向上流动。 当第三隧道晶体管导通时,SRAM器件具有第三隧道晶体管,允许电流在从反相输出端子到第二位线的方向上流动。 当第四隧道晶体管导通时,SRAM器件具有第四隧道晶体管,允许电流在从第二位线到反相输出端的方向上流动。