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1. 发明授权

US06784543B2 External connection terminal and semiconductor device 有权
标题翻译：外部连接端子和半导体器件
公开(公告)号：US06784543B2
公开(公告)日：2004-08-31
申请号：US10374965
申请日：2003-02-28
申请人： Hirohisa Matsuki , Yutaka Makino , Masamitsu Ikumo , Mitsutaka Sato , Tetsuya Fujisawa , Yoshitaka Aiba
发明人： Hirohisa Matsuki , Yutaka Makino , Masamitsu Ikumo , Mitsutaka Sato , Tetsuya Fujisawa , Yoshitaka Aiba
IPC分类号： H01L2352
CPC分类号： H01L24/05 , H01L23/49811 , H01L24/11 , H01L24/13 , H01L24/94 , H01L24/96 , H01L2224/02126 , H01L2224/03462 , H01L2224/0401 , H01L2224/04026 , H01L2224/05 , H01L2224/05554 , H01L2224/05568 , H01L2224/05571 , H01L2224/05572 , H01L2224/13006 , H01L2224/13021 , H01L2224/13022 , H01L2224/13023 , H01L2224/13099 , H01L2224/1358 , H01L2224/16 , H01L2224/274 , H01L2224/814 , H01L2924/0001 , H01L2924/00011 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/12042 , H01L2924/13091 , H01L2924/15787 , H01L2924/351 , H05K3/244 , H01L2924/00 , H01L2224/05552 , H01L2224/81805
摘要： A structure in which a phosphorus-nickel layer, a rich phosphorus nickel layer that contains phosphorus or boron higher than this phosphorus-nickel layer, a nickel-tin ally layer, a tin-rich tin alloy layer, and a tin alloy solder layer are formed in sequence on an electrode. Accordingly, adhesiveness between a metal pattern used as the electrode, the wiring, or the pad and the solder can be improved.
摘要翻译：其中磷镍层，含有比该磷 - 镍层高的磷或硼的富磷镍层，镍锡合金层，富锡锡合金层和锡合金焊料层的结构是在电极上依次形成。因此，可以提高用作电极的金属图案，布线或焊盘和焊料之间的粘合性。

2. 发明授权

US06548898B2 External connection terminal and semiconductor device 有权
标题翻译：外部连接端子和半导体器件
公开(公告)号：US06548898B2
公开(公告)日：2003-04-15
申请号：US09895330
申请日：2001-07-02
申请人： Hirohisa Matsuki , Yutaka Makino , Masamitsu Ikumo , Mitsutaka Sato , Tetsuya Fujisawa , Yoshitaka Aiba
发明人： Hirohisa Matsuki , Yutaka Makino , Masamitsu Ikumo , Mitsutaka Sato , Tetsuya Fujisawa , Yoshitaka Aiba
IPC分类号： H01L2352
CPC分类号： H01L24/05 , H01L23/49811 , H01L24/11 , H01L24/13 , H01L24/94 , H01L24/96 , H01L2224/02126 , H01L2224/03462 , H01L2224/0401 , H01L2224/04026 , H01L2224/05 , H01L2224/05554 , H01L2224/05568 , H01L2224/05571 , H01L2224/05572 , H01L2224/13006 , H01L2224/13021 , H01L2224/13022 , H01L2224/13023 , H01L2224/13099 , H01L2224/1358 , H01L2224/16 , H01L2224/274 , H01L2224/814 , H01L2924/0001 , H01L2924/00011 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/12042 , H01L2924/13091 , H01L2924/15787 , H01L2924/351 , H05K3/244 , H01L2924/00 , H01L2224/05552 , H01L2224/81805
摘要： A structure in which a phosphorus-nickel layer, a rich phosphorus nickel layer that contains phosphorus or boron higher than this phosphorus-nickel layer, a nickel-tin ally layer, a tin-rich tin alloy layer, and a tin alloy solder layer are formed in sequence on an electrode. Accordingly, adhesiveness between a metal pattern used as the electrode, the wiring, or the pad and the solder can be improved.
摘要翻译：其中磷镍层，含有比该磷 - 镍层高的磷或硼的富磷镍层，镍锡合金层，富锡锡合金层和锡合金焊料层的结构是在电极上依次形成。因此，可以提高用作电极的金属图案，布线或焊盘和焊料之间的粘合性。

3. 发明授权

US06566239B2 Semiconductor device manufacturing method having a step of forming a post terminal on a wiring by electroless plating 有权
标题翻译：具有通过无电解电镀在布线上形成柱端子的步骤的半导体器件制造方法
公开(公告)号：US06566239B2
公开(公告)日：2003-05-20
申请号：US09867545
申请日：2001-05-31
申请人： Yutaka Makino , Eiji Watanabe , Hirohisa Matsuki , Tetsuya Fujisawa
发明人： Yutaka Makino , Eiji Watanabe , Hirohisa Matsuki , Tetsuya Fujisawa
IPC分类号： H01L2144
CPC分类号： H01L21/288 , H01L24/11 , H01L2224/0401 , H01L2224/05147 , H01L2224/05155 , H01L2224/05568 , H01L2224/05644 , H01L2224/1147 , H01L2224/13006 , H01L2224/13099 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2224/05552 , H01L2924/00014
摘要： A method of manufacturing a semiconductor device is provided. The method includes the steps of forming a wiring layer on an underlying metal film formed on a substrate, the wiring layer being electrically connected to an electrode pad formed on a substrate, removing a part of the wiring layer so as to form a wiring on the substrate, a part of the underlying metal film being exposed other than a part where the wiring is formed, removing the exposed part of the underlying metal film by using the wiring as a mask, forming a barrier metal film on the wiring so as to cover the wiring and the underlying metal film underneath the wiring, forming a post terminal by electroless plating so that the post terminal is electrically connected to said wiring and providing a sealing resin so as to cover said substrate except a position at which said post terminal is formed.
摘要翻译：提供一种制造半导体器件的方法。该方法包括以下步骤：在形成在基板上的下面的金属膜上形成布线层，该布线层与形成在基板上的电极焊盘电连接，去除一部分布线层，以形成布线层基板，除了形成布线的部分之外，一部分下面的金属膜被露出，通过使用布线作为掩模去除下面的金属膜的暴露部分，在布线上形成阻挡金属膜以覆盖布线和下面的金属膜，通过无电镀形成后端子，使得端子端子与所述布线电连接并提供密封树脂，以便覆盖所述基板，除了形成所述柱端子的位置。

4. 发明授权

US08093148B2 Method for manufacturing semiconductor device having electrode for external connection 有权
标题翻译：具有用于外部连接的电极的半导体器件的制造方法
公开(公告)号：US08093148B2
公开(公告)日：2012-01-10
申请号：US12570459
申请日：2009-09-30
申请人： Yutaka Makino , Masamitsu Ikumo , Hiroyuki Yoda
发明人： Yutaka Makino , Masamitsu Ikumo , Hiroyuki Yoda
IPC分类号： H01L21/44
CPC分类号： H01L24/11 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/03462 , H01L2224/0347 , H01L2224/0361 , H01L2224/03902 , H01L2224/03912 , H01L2224/03914 , H01L2224/0401 , H01L2224/05027 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05572 , H01L2224/05647 , H01L2224/05655 , H01L2224/11009 , H01L2224/11462 , H01L2224/1147 , H01L2224/1181 , H01L2224/11849 , H01L2224/13006 , H01L2224/13076 , H01L2224/13082 , H01L2224/13111 , H01L2224/13116 , H01L2224/13155 , H01L2224/13566 , H01L2224/13687 , H01L2924/00013 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/13091 , H01L2924/19041 , H01L2924/00014 , H01L2924/0105 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00 , H01L2224/05552
摘要： A method for manufacturing semiconductor device which includes forming a first metal film over an electrode pad disposed on a substrate, forming a second metal film on the first metal film, forming a first oxide film on a surface of the first metal film and a second oxide film on a surface of the second metal film by oxidizing the surfaces of the first metal film and the second metal film, removing the first oxide film, and melting the second metal film after removing the first oxide film.
摘要翻译：一种半导体器件的制造方法，其特征在于，在设置在基板上的电极焊盘上形成第一金属膜，在所述第一金属膜上形成第二金属膜，在所述第一金属膜的表面上形成第一氧化膜，通过氧化第一金属膜和第二金属膜的表面，去除第一氧化物膜，以及在除去第一氧化物膜之后熔化第二金属膜，在第二金属膜的表面上形成膜。

5. 发明申请

US20100081269A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING ELECTRODE FOR EXTERNAL CONNECTION 有权
标题翻译：制造具有电极的半导体器件进行外部连接的方法
公开(公告)号：US20100081269A1
公开(公告)日：2010-04-01
申请号：US12570459
申请日：2009-09-30
申请人： Yutaka Makino , Masamitsu Ikumo , Hiroyuki Yoda
发明人： Yutaka Makino , Masamitsu Ikumo , Hiroyuki Yoda
IPC分类号： H01L21/768
CPC分类号： H01L24/11 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/03462 , H01L2224/0347 , H01L2224/0361 , H01L2224/03902 , H01L2224/03912 , H01L2224/03914 , H01L2224/0401 , H01L2224/05027 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05572 , H01L2224/05647 , H01L2224/05655 , H01L2224/11009 , H01L2224/11462 , H01L2224/1147 , H01L2224/1181 , H01L2224/11849 , H01L2224/13006 , H01L2224/13076 , H01L2224/13082 , H01L2224/13111 , H01L2224/13116 , H01L2224/13155 , H01L2224/13566 , H01L2224/13687 , H01L2924/00013 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/13091 , H01L2924/19041 , H01L2924/00014 , H01L2924/0105 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00 , H01L2224/05552
摘要： A method for manufacturing semiconductor device which includes forming a first metal film over an electrode pad disposed on a substrate, forming a second metal film on the first metal film, forming a first oxide film on a surface of the first metal film and a second oxide film on a surface of the second metal film by oxidizing the surfaces of the first metal film and the second metal film, removing the first oxide film, and melting the second metal film after removing the first oxide film.
摘要翻译：一种半导体器件的制造方法，其特征在于，在设置在基板上的电极焊盘上形成第一金属膜，在所述第一金属膜上形成第二金属膜，在所述第一金属膜的表面上形成第一氧化膜，通过氧化第一金属膜和第二金属膜的表面，去除第一氧化物膜，以及在除去第一氧化物膜之后熔化第二金属膜，在第二金属膜的表面上形成膜。

6. 发明授权

US06218281B1 Semiconductor device with flip chip bonding pads and manufacture thereof 有权
标题翻译：具有倒装芯片接合焊盘的半导体器件及其制造
公开(公告)号：US06218281B1
公开(公告)日：2001-04-17
申请号：US09192443
申请日：1998-11-16
申请人： Eiji Watanabe , Hirohisa Matsuki , Kenichi Kado , Kenichi Nagashige , Masanori Onodera , Kunio Kodama , Hiroyuki Yoda , Joji Fujimori , Minoru Nakada , Yutaka Makino
发明人： Eiji Watanabe , Hirohisa Matsuki , Kenichi Kado , Kenichi Nagashige , Masanori Onodera , Kunio Kodama , Hiroyuki Yoda , Joji Fujimori , Minoru Nakada , Yutaka Makino
IPC分类号： H01L2144
CPC分类号： H01L24/11 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/0231 , H01L2224/02377 , H01L2224/03462 , H01L2224/039 , H01L2224/03912 , H01L2224/0392 , H01L2224/0401 , H01L2224/05548 , H01L2224/05567 , H01L2224/05569 , H01L2224/05571 , H01L2224/05647 , H01L2224/11462 , H01L2224/1147 , H01L2224/1191 , H01L2224/13024 , H01L2224/13082 , H01L2224/13111 , H01L2224/13116 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/13091 , H01L2924/14 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2224/81805
摘要： A semiconductor substrate is prepared which has a principal surface, an exposed pad made of conductive material being formed in a partial area of the principal surface, and the other area of the principal surface being covered with a first insulating film. A base conductive film is formed on the first insulating film and the pad. A photoresist film having a thickness of 50 &mgr;m or thicker is formed on the base conductive film. An opening is formed through the photoresist film in an area corresponding to the pad to expose a partial surface area of the base conductive film. A conductive bump electrode is deposited on the base conductive film exposed on a bottom of the opening. The photoresist film is removed. This method is suitable for making a fine pitch between bump electrodes.
摘要翻译：制备半导体衬底，其具有主表面，由导电材料制成的裸露焊盘形成在主表面的局部区域中，并且主表面的另一区域被第一绝缘膜覆盖。在第一绝缘膜和垫上形成基底导电膜。在基底导电膜上形成厚度为50μm以上的光刻胶膜。在与该焊盘相对应的区域中形成通过光致抗蚀剂膜的开口以暴露基底导电膜的部分表面区域。导电凸块电极沉积在暴露在开口底部的基底导电膜上。除去光致抗蚀剂膜。该方法适用于在凸块电极之间形成细间距。

7. 发明授权

US07642738B2 Power steering apparatus 有权
标题翻译：动力转向装置
公开(公告)号：US07642738B2
公开(公告)日：2010-01-05
申请号：US11845847
申请日：2007-08-28
申请人： Kenichi Hamada , Tamotsu Yamaura , Atsushi Matsuoka , Yutaka Makino
发明人： Kenichi Hamada , Tamotsu Yamaura , Atsushi Matsuoka , Yutaka Makino
IPC分类号： H02P7/00
CPC分类号： B62D5/065 , B62D5/0496
摘要： A power steering apparatus includes an electric motor, a temperature sensor, and a control unit. The electric motor produces an assist steering effort in a steering system. The temperature sensor measures a temperature of a first portion subject to thermal influence of operation of the electric motor. The control unit determines an estimated temperature of a second portion in accordance with a value of a motor current, the second portion being subject to thermal influence of operation of the electric motor. The control unit determines a first upper limit value in accordance with the measured temperature; determines a second upper limit value in accordance with the estimated temperature; limit the motor current to a smaller one of the first and second upper limit values, when determining that the temperature sensor is normal; limit the motor current to the second upper limit value, when determining that the temperature sensor is abnormal.
摘要翻译：动力转向装置包括电动机，温度传感器和控制单元。电动机在转向系统中产生辅助转向力。温度传感器测量受到电动机操作的热影响的第一部分的温度。控制单元根据电动机电流的值确定第二部分的估计温度，第二部分受到电动机的操作的热影响。控制单元根据测量的温度确定第一上限值; 根据估计的温度确定第二上限值; 当确定温度传感器正常时，将电机电流限制在第一和第二上限值中较小的一个; 当确定温度传感器异常时，将电机电流限制到第二上限值。

8. 发明申请

US20090285080A1 PICKUP LENS WITH PHASE COMPENSATOR AND OPTICAL PICKUP APPARATUS USING THE SAME 失效
标题翻译：具有相位补偿器的PICKUP镜头和使用相机的光学拾取装置
公开(公告)号：US20090285080A1
公开(公告)日：2009-11-19
申请号：US12510350
申请日：2009-07-28
申请人： Koichiro WAKABAYASHI , Keiko Hirao , Mitsuhiro Miyauchi , Yutaka Makino , Yasuyuki Sugi , Yoshikazu Mitsui
发明人： Koichiro WAKABAYASHI , Keiko Hirao , Mitsuhiro Miyauchi , Yutaka Makino , Yasuyuki Sugi , Yoshikazu Mitsui
IPC分类号： G11B7/135
CPC分类号： G11B7/1369 , G11B7/13925 , G11B2007/0006
摘要： A pickup lens with a phase compensator is composed of a condenser lens and a phase compensator. At least one surface of the condenser lens has a step-like annular zone structure to compensate wavefront aberration generated when recording and reproducing data on an information recording medium having a substrate thickness of t1 with a laser beam having a wavelength λ1 and wavefront aberration generated when recording and reproducing data on an information recording medium having a substrate thickness of t2 with a laser beam having a wavelength λ2. The phase compensator compensates wavefront aberration generated when recording and reproducing data on an information recording medium having a substrate thickness of t3 with a laser beam having a wavelength λ3.
摘要翻译：具有相位补偿器的拾取镜头由聚光透镜和相位补偿器组成。聚光透镜的至少一个表面具有阶梯状环形区域结构，用于补偿当在具有基板厚度t1的信息记录介质上记录和再现数据时产生的波前像差，其中激光束具有波长λ1的激光束和当在具有波长λ2的激光束的基板厚度为t2的信息记录介质上记录和再现数据。相位补偿器补偿在具有波长λ3的激光束的基板厚度为t3的信息记录介质上记录和再现数据时产生的波前像差。

9. 发明申请

US20080012128A1 Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20080012128A1
公开(公告)日：2008-01-17
申请号：US11703153
申请日：2007-02-07
申请人： Yutaka Makino , Tadahiro Okamoto , Takaki Kurita
发明人： Yutaka Makino , Tadahiro Okamoto , Takaki Kurita
IPC分类号： H01L23/498 , H01L21/60
CPC分类号： H01L24/12 , H01L24/03 , H01L24/05 , H01L24/11 , H01L2224/03464 , H01L2224/0401 , H01L2224/05138 , H01L2224/05624 , H01L2224/1147 , H01L2224/11849 , H01L2224/119 , H01L2224/13099 , H01L2224/131 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/05042 , H01L2924/13091 , H01L2924/19041 , H01L2924/00014 , H01L2924/00
摘要： When a nickel (Ni) layer is formed on an electrode pad made of aluminum-silicon (Al—Si) by an electroless plating method, prior to the precipitation of zinc (Zn) which becomes a catalyst, copper (Cu) is formed in the form of discontinuous spots or islands on the surface of the electrode pad, thereby providing a copper (Cu) thin layer.
摘要翻译：当通过化学镀法在由铝 - 硅（Al-Si）制成的电极焊盘上形成镍（Ni）层时，在沉淀出成为催化剂的锌（Zn）之前，形成铜（Cu）在电极焊盘的表面上形成不连续的点或岛，由此提供铜（Cu）薄层。

10. 发明授权

US06522016B1 Interconnection structure with film to increase adhesion of the bump 失效
标题翻译：互连结构与薄膜增加凸块的粘附力
公开(公告)号：US06522016B1
公开(公告)日：2003-02-18
申请号：US09531682
申请日：2000-03-20
申请人： Yutaka Makino , Toshiharu Egami , Eiji Watanabe
发明人： Yutaka Makino , Toshiharu Egami , Eiji Watanabe
IPC分类号： H01L2348
CPC分类号： H01L24/05 , H01L24/13 , H01L2224/05001 , H01L2224/05022 , H01L2224/05557 , H01L2224/05572 , H01L2224/13006 , H01L2224/13099 , H01L2224/13111 , H01L2924/0001 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00014
摘要： A semiconductor device having a highly resistant metal film and a method of producing such a semiconductor device, which includes a metal film formed on an electrode pad, and a protection film formed in an area where he metal film does not exist. The metal film has a greater thickness on its peripheral end portion in contact with the protection film. The semiconductor device can be produced by a semiconductor production method including the steps of activating the surface o the electrode pad with a chelating solution containing glycine and a compound having a metallic element as nuclei, and forming a metal film by electroless metal plating.
摘要翻译：具有高电阻金属膜的半导体器件和制造这种半导体器件的方法，其包括在电极焊盘上形成的金属膜，以及形成在不存在金属膜的区域中的保护膜。金属膜在与保护膜接触的外周端部具有更大的厚度。半导体器件可以通过半导体制造方法制造，包括以下步骤：用含有甘氨酸和金属元素的化合物作为核的螯合溶液激活电极焊盘的表面，并通过化学镀金属形成金属膜。

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