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1. 发明授权

US5279995A Zirconia ceramics 失效
标题翻译：氧化锆陶瓷
公开(公告)号：US5279995A
公开(公告)日：1994-01-18
申请号：US38051
申请日：1993-03-25
申请人： Hiroaki Tanaka , Yutaka Kimura , Masamichi Obitsu
发明人： Hiroaki Tanaka , Yutaka Kimura , Masamichi Obitsu
IPC分类号： C04B35/486 , C04B35/48
CPC分类号： C04B35/486
摘要： A zirconia ceramic composed of crystals which scarcely undergo phase transformation from tetragonal system to monoclinic in the temperature range of from 100.degree. C. to 300.degree. C. even in the presence of water vapor or water is disclosed, said zirconia ceramic comprising at least 93% by weight of partially stabilized zirconia mainly composed of tetragonal crystals and containing mainly Y.sub.2 O.sub.3 and ZrO.sub.2 at the former to the latter molar ratio of from 2/98 to 4.5/95.5 and balance of at least one of the oxides selected from the group consisting of boron oxide, germanium oxide, and gallium oxide, wherein the content of the boron oxide is 1% by weight or less.
摘要翻译：公开了一种由晶体组成的氧化锆陶瓷，即使在水蒸汽或水的存在下也几乎不会在从100度到300度的温度范围内从四方晶相转变为单斜晶系，所述氧化锆陶瓷包含至少93 主要由四方晶体组成并且主要含有Y 2 O 3和ZrO 2的部分稳定化的氧化锆的重量百分数，其中后者的摩尔比为2/98至4.5 / 95.5，余量为至少一种选自以下的氧化物：氧化硼，氧化锗和氧化镓，其中氧化硼的含量为1重量％以下。

2. 发明授权

US5643497A Aqueous zirconia sol and method of preparing same 失效
标题翻译：氧化锆水溶胶及其制备方法
公开(公告)号：US5643497A
公开(公告)日：1997-07-01
申请号：US460593
申请日：1995-06-02
申请人： Takao Kaga , Yutaka Kimura , Fumio Saito , Hiroaki Tanaka
发明人： Takao Kaga , Yutaka Kimura , Fumio Saito , Hiroaki Tanaka
IPC分类号： B01J13/00
CPC分类号： B01J13/00
摘要： A stable aqueous sol of colloidal zirconia having lowered surface activity and useful for polishing semiconductors and the like, is prepared by a process comprising calcining a colloidal zirconia having a specific surface area of 10 to 400 m.sup.2 /g, a particle size of 20 to 500 nm and a dehydratable water content of 4 to 15% by weight at 400.degree. to 1,000.degree. C. to form a calcined zirconia having a dehydratable water content of 0.1 to 2% by weight, and pulverizing the calcined zirconia in the presence of a water-soluble acid or alkali in water, to form the stable sol of colloidal zirconia having a specific surface area of 5 to 200 m.sup.2 /g, a particle size of 20 to 1,500 nm and a dehydratable water content of 0.1 to 3% by weight. The stable sol of colloidal zirconia has a ZrO.sub.2 concentration of 5 to 80% by weight.
摘要翻译：通过包括煅烧比表面积为10-400m 2 / g，粒度为20-500的胶体氧化锆的方法制备具有降低的表面活性并可用于抛光半导体等的胶态氧化锆稳定的水性溶胶并且在400-1000℃下可脱水的含水量为4至15重量％，以形成可脱水水含量为0.1至2重量％的煅烧氧化锆，并在煅烧的水的存在下粉碎煅烧氧化锆在水中的可溶性酸或碱，形成比表面积为5〜200m 2 / g，粒径为20〜1500nm，脱水水分为0.1〜3重量％的胶态氧化锆的稳定溶胶。胶体氧化锆的稳定溶胶的ZrO2浓度为5〜80重量％。

3. 发明授权

US10962776B2 Display device, display system, mobile object, display control method, and recording medium storing program code 有权
公开(公告)号：US10962776B2
公开(公告)日：2021-03-30
申请号：US16779843
申请日：2020-02-03
申请人： Hiroaki Tanaka , Toshihiro Yamashiro
发明人： Hiroaki Tanaka , Toshihiro Yamashiro
IPC分类号： G02B27/01
摘要： A display device includes a light source; a light deflector configured to deflect light emitted from the light source to scan as scanning light in a main scanning direction and a sub-scanning direction; a screen having a scanning area to be two-dimensionally scanned with the scanning light at a predetermined cycle, the scanning area having a first area and a second area that differ in position in the sub-scanning direction; a light receiver disposed on the screen, configured to detect the light scanning in each of the first area and the second area of the screen; and a control unit configured to adjust a position of the scanning light in the scanning area according to the number of scanning lines in each of the first area and the second area.

4. 发明授权

US09372433B2 Electrostatic latent image forming method, electrostatic latent image forming apparatus, and image forming apparatus 有权
公开(公告)号：US09372433B2
公开(公告)日：2016-06-21
申请号：US14830352
申请日：2015-08-19
申请人： Hiroyuki Suhara , Hiroaki Tanaka
发明人： Hiroyuki Suhara , Hiroaki Tanaka
IPC分类号： G03G15/043 , B41J2/385 , B41J2/435
CPC分类号： G03G15/043 , B41J2/385 , B41J2/435
摘要： An electrostatic latent image forming method for forming, on an image carrier, an electrostatic latent image that has a pattern where there are an irradiated area and a not-irradiated area in a mixed manner, the electrostatic latent image forming method comprises; adjusting an exposure condition of an irradiated area that is included in the irradiated area and is adjacent to the not-irradiated area so that an electric field intensity of an electrostatic latent image that corresponds to the not-irradiated area is increased so as to prevent adhesion of a developer, and irradiating the image carrier with light under the adjusted exposure condition.

5. 发明申请

US20150054075A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20150054075A1
公开(公告)日：2015-02-26
申请号：US14501244
申请日：2014-09-30
申请人： Tadahiro Ohmi , Hiroaki Tanaka
发明人： Tadahiro Ohmi , Hiroaki Tanaka
IPC分类号： H01L29/10 , H01L29/417 , H01L29/45 , H01L29/78
CPC分类号： H01L29/1087 , H01L27/1203 , H01L29/41733 , H01L29/458 , H01L29/7816
摘要： There is provided a semiconductor device. An n-type transistor is formed on a (551) surface of a silicon substrate. A silicide layer region in contact with a diffusion region (heavily doped region) of the n-type transistor has a thickness not more than 5 nm. A metal layer region in contact with the silicide layer has a thickness of 25 nm (inclusive) to 400 nm (inclusive). A barrier height between the silicide layer region and the diffusion region has a minimum value in this thickness relationship.
摘要翻译：提供了一种半导体器件。 n型晶体管形成在硅衬底的（551）表面上。与n型晶体管的扩散区域（重掺杂区域）接触的硅化物层区域的厚度不大于5nm。与硅化物层接触的金属层区域的厚度为25nm（含）〜400nm（含）。硅化物层区域和扩散区域之间的势垒高度在该厚度关系中具有最小值。

6. 发明授权

US08836150B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08836150B2
公开(公告)日：2014-09-16
申请号：US13989962
申请日：2010-11-29
申请人： Hiroaki Tanaka
发明人： Hiroaki Tanaka
IPC分类号： H01L23/498 , H01L23/00 , H01L29/739 , H01L29/417
CPC分类号： H01L23/498 , H01L24/05 , H01L24/48 , H01L24/49 , H01L24/85 , H01L29/417 , H01L29/41741 , H01L29/7397 , H01L2224/04042 , H01L2224/05553 , H01L2224/05557 , H01L2224/05624 , H01L2224/451 , H01L2224/48091 , H01L2224/48132 , H01L2224/4847 , H01L2224/48491 , H01L2224/49175 , H01L2224/85205 , H01L2924/00014 , H01L2924/1305 , H01L2924/13055 , H01L2924/3511 , H01L2224/45099 , H01L2924/00
摘要： A semiconductor device disclosed in this description has a semiconductor substrate including an element region in which a semiconductor element is formed, and an upper surface electrode formed on an upper surface of the element region of the semiconductor substrate. The upper surface electrode has a first thickness region and a second thickness region which is thicker than the first thickness region, and a bonding wire is bonded on the second thickness region.
摘要翻译：在本说明书中公开的半导体器件具有包括其中形成半导体元件的元件区域和形成在半导体衬底的元件区域的上表面上的上表面电极的半导体衬底。上表面电极具有比第一厚度区域厚的第一厚度区域和第二厚度区域，并且接合线接合在第二厚度区域上。

7. 发明授权

US08704937B2 Imaging optical system, imaging device, and digital apparatus 有权
标题翻译：成像光学系统，成像设备和数字设备
公开(公告)号：US08704937B2
公开(公告)日：2014-04-22
申请号：US13837623
申请日：2013-03-15
申请人： Keiji Matsusaka , Hiroaki Tanaka
发明人： Keiji Matsusaka , Hiroaki Tanaka
IPC分类号： H04N5/225 , G02B9/34
CPC分类号： G02B3/00 , G02B3/04 , G02B13/004 , G02B13/18 , H04N5/23245
摘要： An imaging optical system, an imaging device, and a digital apparatus have a four lens construction with positive, negative, positive, and negative refractive powers. A surface position at the maximum effective diameter of the second lens element is located on the object side than a surface vertex thereof. The fourth lens element has an inflection point at a position other than the intersection of the optical axis and the fourth lens element. The optical system satisfies the following conditions. 0.7 72 ν4>50, and 0.55
摘要翻译：成像光学系统，成像装置和数字装置具有正，负，正和负折射力的四透镜结构。第二透镜元件的最大有效直径处的表面位置位于物体侧，而不是其表面顶点。第四透镜元件在光轴和第四透镜元件的交点以外的位置具有拐点。光学系统满足以下条件。 0.7 72＆ ; 4> 50和0.55

8. 发明申请

US20130241084A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130241084A1
公开(公告)日：2013-09-19
申请号：US13989962
申请日：2010-11-29
申请人： Hiroaki Tanaka
发明人： Hiroaki Tanaka
IPC分类号： H01L23/498
CPC分类号： H01L23/498 , H01L24/05 , H01L24/48 , H01L24/49 , H01L24/85 , H01L29/417 , H01L29/41741 , H01L29/7397 , H01L2224/04042 , H01L2224/05553 , H01L2224/05557 , H01L2224/05624 , H01L2224/451 , H01L2224/48091 , H01L2224/48132 , H01L2224/4847 , H01L2224/48491 , H01L2224/49175 , H01L2224/85205 , H01L2924/00014 , H01L2924/1305 , H01L2924/13055 , H01L2924/3511 , H01L2224/45099 , H01L2924/00
摘要： A semiconductor device disclosed in this description has a semiconductor substrate including an element region in which a semiconductor element is formed, and an upper surface electrode formed on an upper surface of the element region of the semiconductor substrate. The upper surface electrode has a first thickness region and a second thickness region which is thicker than the first thickness region, and a bonding wire is bonded on the second thickness region.
摘要翻译：在本说明书中公开的半导体器件具有包括其中形成半导体元件的元件区域和形成在半导体衬底的元件区域的上表面上的上表面电极的半导体衬底。上表面电极具有比第一厚度区域厚的第一厚度区域和第二厚度区域，并且接合线接合在第二厚度区域上。

9. 发明申请

US20130193279A1 BAND CLIP 有权
标题翻译：带夹
公开(公告)号：US20130193279A1
公开(公告)日：2013-08-01
申请号：US13878792
申请日：2011-03-28
申请人： Hiroaki Tanaka
发明人： Hiroaki Tanaka
IPC分类号： F16L3/137
CPC分类号： F16L3/137 , B60R16/0215 , F16B21/086 , H02G3/32 , Y10T24/1498
摘要： A band clip includes a body, a band integral with the body, and a clip that is attached to the body. The body has a vertical plate with a band insertion hole and a horizontal plate with a clip attachment hole. The band extends from the vertical plate. Locking holes penetrate the band at intervals. The clip includes a shaft that is fit into the clip attachment hole of the body, a wing on one end of the shaft, a band locking claw at another end of the shaft, and a body locking claw on an intermediate portion of the shaft. The band is wrapped around a group of wires and inserted into the band insertion hole. The band locking claw of the clip is inserted into and locked to a band locking hole, and the body locking claw contacts the surface of the body.
摘要翻译：带夹包括主体，与身体整体的带，以及附接到身体的夹子。本体具有带有带插孔的垂直板和带有夹子安装孔的水平板。带从垂直板延伸。锁孔每隔一段时间穿透。该夹子包括一个装配在主体的夹子附接孔中的轴，在轴的一端上的翼，在轴的另一端的带锁定爪，以及在轴的中间部分上的主体锁定爪。带缠绕在一组电线上并插入带插入孔。夹子的带锁定爪插入并锁定到带锁定孔，并且身体锁定爪接触身体的表面。

10. 外观设计

USD679790S1 Water heater 有权
公开(公告)号：USD679790S1
公开(公告)日：2013-04-09
申请号：US29371967
申请日：2012-02-28
申请人： Jun Doi , Hiroaki Tanaka , Tetsunori Kuriyama , Takahide Hasegawa , Kengo Horiuchi , Eiji Kanki
设计人： Jun Doi , Hiroaki Tanaka , Tetsunori Kuriyama , Takahide Hasegawa , Kengo Horiuchi , Eiji Kanki

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