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    • 1. 发明授权
    • Light valve device
    • 光阀装置
    • US6067062A
    • 2000-05-23
    • US749292
    • 1991-08-23
    • Hiroaki TakasuYoshikazu KojimaMasaaki KamiyaTsuneo YamazakiHiroshi SuzukiMasaaki TaguchiRyuichi TakanoSatoru Yabe
    • Hiroaki TakasuYoshikazu KojimaMasaaki KamiyaTsuneo YamazakiHiroshi SuzukiMasaaki TaguchiRyuichi TakanoSatoru Yabe
    • G02F1/1337G02F1/136G02F1/1362G09G3/20G09G3/36G09G5/00H01L27/12
    • G02F1/13454G02F1/13378G09G3/3648H01L27/1214H01L27/1251G02F1/136213G02F2202/105G09G2330/02G09G5/006
    • A light valve has a composite substrate comprised of an electrically insulating substrate and a semiconductor single crystal thin film formed over the electrically insulating substrate. A pixel array comprising semiconductor switch elements is formed in the semiconductor single crystal thin film. A peripheral circuit having circuit elements is formed in the semiconductor single crystal thin film so that a small-sized, high speed light valve is obtained. X- driver and Y-driver circuits are formed in the semiconductor single crystal thin film and controlled by a control circuit, such as a video signal processing circuit, which receives and processes video signals inputted directly from an external source. The peripheral circuit can be a DRAM sense amplifier for sensing charges stored in each pixel of the pixel array to detect defects in the pixel array. The peripheral circuit can be a photosensor circuit for detecting an intensity of incident light to monitor the performance of a light source of the light valve. The peripheral circuit can be a temperature sensor for detecting the temperature of a liquid crystal layer of the light valve, and may be comprised of Darlington connected NPN transistors formed in the semiconductor single crystal thin film. The peripheral circuit can also be a solar cell for converting incident light into electrical energy to supply power to at least one of the pixel array, X-driver and Y-driver circuits and the peripheral circuit.
    • 光阀具有由电绝缘基板和形成在电绝缘基板上的半导体单晶薄膜构成的复合基板。 包含半导体开关元件的像素阵列形成在半导体单晶薄膜中。 在半导体单晶薄膜中形成具有电路元件的外围电路,从而获得小型高速光阀。 X驱动器和Y驱动器电路形成在半导体单晶薄膜中,并由诸如视频信号处理电路的控制电路控制,该电路接收并处理从外部源直接输入的视频信号。 外围电路可以是用于感测存储在像素阵列的每个像素中的电荷的DRAM读出放大器,以检测像素阵列中的缺陷。 外围电路可以是用于检测入射光的强度以监视光阀的光源的性能的光电传感器电路。 外围电路可以是用于检测光阀的液晶层的温度的温度传感器,并且可以由形成在半导体单晶薄膜中的达林顿连接的NPN晶体管组成。 外围电路也可以是用于将入射光转换为电能以向像素阵列,X驱动器和Y驱动器电路和外围电路中的至少一个供电的太阳能电池。
    • 10. 发明授权
    • Resonant pressure sensor and method of manufacturing the same
    • 共振压力传感器及其制造方法
    • US09003889B2
    • 2015-04-14
    • US13593311
    • 2012-08-23
    • Yuusaku YoshidaTakashi YoshidaHiroshi SuzukiShuhei YoshitaHisashi Terashita
    • Yuusaku YoshidaTakashi YoshidaHiroshi SuzukiShuhei YoshitaHisashi Terashita
    • G01L11/00G01L9/00
    • G01L9/0016G01L9/0045
    • A resonant pressure sensor including one or more resonant-type strain gauges arranged on a diaphragm may include a sensor substrate made of silicon and including one surface on which one or more resonant-type strain gauge elements are arranged and the other surface which is polished to have a thickness corresponding to the diaphragm, a base substrate made of silicon and including one surface directly bonded with the other surface of the sensor substrate, a concave portion formed in a portion of the base substrate bonding with the sensor substrate, substantially forming the diaphragm in the sensor substrate, and including a predetermined gap that does not restrict a movable range of the diaphragm due to foreign substances and suppresses vibration of the diaphragm excited by vibration of the resonant-type strain gauge elements, one or more conducting holes, and a fluid.
    • 包括设置在隔膜上的一个或多个谐振型应变计的共振压力传感器可以包括由硅制成的传感器基板,并且包括一个表面,一个表面上布置有一个或多个谐振型应变计元件,另一个表面抛光到 具有对应于隔膜的厚度,由硅制成的基底基板,其包括与传感器基板的另一表面直接接合的一个表面;凹部,形成在与传感器基板接合的基底部分的一部分中,基本上形成隔膜 并且包括预定的间隙,其不会由于异物而限制隔膜的可移动范围,并且抑制由共振型应变计元件的振动激励的隔膜的振动,一个或多个导电孔和 流体。