专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06191476B1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06191476B1
公开(公告)日：2001-02-20
申请号：US08859571
申请日：1997-05-20
申请人： Kunihiro Takahashi , Mizuaki Suzuki , Tsuneo Yamazaki , Hiroaki Takasu , Kunio Nakajima , Atsushi Sakurai , Tadao Iwaki , Yoshikazu Kojima , Masaaki Kamiya
发明人： Kunihiro Takahashi , Mizuaki Suzuki , Tsuneo Yamazaki , Hiroaki Takasu , Kunio Nakajima , Atsushi Sakurai , Tadao Iwaki , Yoshikazu Kojima , Masaaki Kamiya
IPC分类号： H01L2310
CPC分类号： G02F1/13454 , G02F1/133512 , G02F2001/136281 , H01L23/36 , H01L23/367 , H01L27/12 , H01L27/1203 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： To provide a semiconductor substrate and a light-valve semiconductor substrate capable of preventing the threshold value of a MOS transistor on a single-crystal silicon device forming layer from increasing and forming a MOS integrated circuit with a high reliability even for a long-time operation. A semiconductor substrate and a light-valve semiconductor substrate comprising a single-crystal silicon thin-film device forming layer 5001 formed above an insulating substrate 5004 through an adhesive layer 5003 and an insulating layer 5002 formed on the single-crystal silicon thin-film device forming layer, wherein a heat conductive layers 5201 and 5202 made of a material with a high heat conductivity are arranged between the single-crystal silicon thin-film device forming layer and the adhesive layer and on the insulating layer.
摘要翻译：为了提供能够防止单晶硅器件形成层上的MOS晶体管的阈值的半导体衬底和光阀半导体衬底，即使对于长时间操作而增加并形成具有高可靠性的MOS集成电路。一种半导体衬底和一个光阀半导体衬底，它包括通过粘合剂层5003形成在绝缘衬底5004上的单晶硅薄膜器件形成层5001和形成在单晶硅薄膜器件上的绝缘层5002 形成层，其中在单晶硅薄膜器件形成层和粘合剂层之间以及绝缘层上布置由具有高导热性的材料制成的导热层5201和5202。

2. 发明授权

US5434433A Semiconductor device for a light wave 失效
标题翻译：用于光波的半导体器件
公开(公告)号：US5434433A
公开(公告)日：1995-07-18
申请号：US106418
申请日：1993-08-13
申请人： Hiroaki Takasu , Yoshikazu Kojima , Kunihiro Takahashi , Tsuneo Yamazaki , Tadao Iwaki
发明人： Hiroaki Takasu , Yoshikazu Kojima , Kunihiro Takahashi , Tsuneo Yamazaki , Tadao Iwaki
IPC分类号： G02F1/1335 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09G3/36 , H01L21/77 , H01L27/12 , H01L29/786 , H01L33/00
CPC分类号： G02F1/13454 , H01L27/1203 , H01L27/1214 , G02F2001/136281 , G02F2202/105
摘要： A semiconductor substrate is utilized to integrally form a drive circuit and a pixel array to produce a transparent semiconductor device for a light valve. The semiconductor device for a light valve is constructed by a semiconductor substrate composed of a bulk single crystal silicon having an opaque thick portion and a thin transparent portion. A pixel array is formed in the transparent portion. A drive circuit is formed in a top face of the opaque portion. A transparent support substrate is laminated to the top face of the semiconductor substrate for reinforcement. A bulk portion of the semiconductor substrate is removed from a back face thereof by selective etching to provide the transparent portion.
摘要翻译：利用半导体衬底整体地形成驱动电路和像素阵列以产生用于光阀的透明半导体器件。用于光阀的半导体器件由具有不透明厚部分和薄透明部分的大块单晶硅构成的半导体衬底构成。在透明部分中形成像素阵列。驱动电路形成在不透明部分的顶面。将透明支撑基板层叠到半导体基板的顶面以进行加强。通过选择性蚀刻从其背面去除半导体衬底的主体部分以提供透明部分。

3. 发明授权

US06187605B1 Method of forming a semiconductor device for a light valve 失效
标题翻译：形成光阀的半导体器件的方法
公开(公告)号：US06187605B1
公开(公告)日：2001-02-13
申请号：US08308564
申请日：1994-09-19
申请人： Hiroaki Takasu , Yoshikazu Kojima , Kunihiro Takahashi , Tsuneo Yamazaki , Tadao Iwaki
发明人： Hiroaki Takasu , Yoshikazu Kojima , Kunihiro Takahashi , Tsuneo Yamazaki , Tadao Iwaki
IPC分类号： H01L2100
CPC分类号： H01L27/1214 , G02F1/13454 , G02F2001/136281 , G02F2202/105 , H01L27/1203
摘要： A semiconductor substrate is utilized to integrally form a drive circuit and a pixel array to produce a transparent semiconductor device for a light valve. The semiconductor device for a light valve is constructed of a semiconductor substrate composed of a bulk single crystal silicon having an opaque thick portion and a thin transparent portion. A pixel array is formed in the transparent portion. A drive circuit is formed in a top face of the opaque portion. A transparent support substrate is laminated to the top face of the semiconductor substrate for reinforcement. A bulk portion of the semiconductor substrate is removed from a back face thereof by selective etching to provide the transparent portion.
摘要翻译：利用半导体衬底整体地形成驱动电路和像素阵列以产生用于光阀的透明半导体器件。用于光阀的半导体器件由具有不透明厚部分和薄透明部分的块状单晶硅构成的半导体衬底构成。在透明部分中形成像素阵列。驱动电路形成在不透明部分的顶面。将透明支撑基板层叠到半导体基板的顶面以进行加强。通过选择性蚀刻从其背面去除半导体衬底的主体部分以提供透明部分。

4. 发明授权

US5633176A Method of producing a semiconductor device for a light valve 失效
标题翻译：制造光阀半导体装置的方法
公开(公告)号：US5633176A
公开(公告)日：1997-05-27
申请号：US463687
申请日：1995-06-05
申请人： Hiroaki Takasu , Yoshikazu Kojima , Kunihiro Takahashi , Tsuneo Yamazaki , Tadao Iwaki
发明人： Hiroaki Takasu , Yoshikazu Kojima , Kunihiro Takahashi , Tsuneo Yamazaki , Tadao Iwaki
IPC分类号： G02F1/1362 , H01L27/12 , H01L21/84 , H01L21/304
CPC分类号： G02F1/13454 , H01L27/12 , H01L27/1203 , G02F2001/136281 , G02F2202/105 , Y10S438/977
摘要： A semiconductor substrate is utilized to integrally form a drive circuit and a pixel array to produce a transparent semiconductor device for a light valve comprising a pixel array region and a drive circuit region on a major face of the semiconductor substrate. A stopper film is formed on the major face of the semiconductor substrate at the pixel array region, and a pixel array is formed over the silicon oxide stopper film. A drive circuit is formed on the drive circuit region, and silicon oxide posts are embedded in the major face of the semiconductor substrate at the drive circuit region. A thickness of the semiconductor substrate is then selectively removed from a back face opposite to the major face thereof to reach the stopper film. After the selective removing step, the portion of the semiconductor substrate under the pixel region is completely removed while a portion of the semiconductor substrate under the drive circuit region remains.
摘要翻译：半导体衬底被用于整体形成驱动电路和像素阵列以产生用于光阀的透明半导体器件，其包括在半导体衬底的主面上的像素阵列区域和驱动电路区域。在像素阵列区域的半导体基板的主面上形成有阻挡膜，在氧化硅阻挡膜上形成像素阵列。在驱动电路区域上形成驱动电路，在驱动电路区域，氧化硅柱嵌入半导体基板的主面。然后从与其主面相反的背面选择性地去除半导体衬底的厚度以到达阻挡膜。在选择性去除步骤之后，半导体衬底在像素区域下方的部分被完全去除，而驱动电路区域下的半导体衬底的一部分保留。

5. 发明授权

US5574292A Semiconductor device with monosilicon layer 失效
标题翻译：具有单晶硅层的半导体器件
公开(公告)号：US5574292A
公开(公告)日：1996-11-12
申请号：US57986
申请日：1993-05-05
申请人： Kunihiro Takahashi , Yoshikazu Kojima , Hiroaki Takasu , Tsuneo Yamazaki , Tadao Iwaki
发明人： Kunihiro Takahashi , Yoshikazu Kojima , Hiroaki Takasu , Tsuneo Yamazaki , Tadao Iwaki
IPC分类号： H01L29/78 , G02F1/1362 , H01L27/12 , H01L29/786 , H01L33/00
CPC分类号： G02F1/13454 , H01L27/1203 , H01L29/78609 , H01L29/78621 , G02F2202/105
摘要： A semiconductor device has an integrated circuit formed in a monosilicon layer provided on an electrically insulative material. The monosilicon layer has an integrated circuit formed thereon, and a passivation film covers the integrated circuit. A support member is fixed to the electrically insulative material through an adhesive layer to support the monosilicon layer. The integrated circuit comprises an MIS transistor having a source region, drain region, and channel region formed in the monosilicon layer. The semiconductor device is suitable for use in a high speed, high capacity liquid crystal light valve having a structure where a pixel switching element group and a peripheral driver circuit are formed integrally on a common substrate.
摘要翻译：半导体器件具有形成在设置在电绝缘材料上的单硅层中的集成电路。单晶硅层具有形成在其上的集成电路，钝化膜覆盖集成电路。支撑构件通过粘合剂层固定到电绝缘材料以支撑单硅层。集成电路包括具有形成在单硅层中的源极区，漏极区和沟道区的MIS晶体管。该半导体装置适用于具有像素开关元件组和周边驱动电路一体地形成在共同的基板上的结构的高速，高容量的液晶光阀。

6. 发明授权

US5459335A Semiconductor substrate having a thin film semiconductor layer bonded on a support substrate through an adhesive layer 失效
标题翻译：具有薄膜半导体层的半导体衬底通过粘合剂层结合在支撑衬底上
公开(公告)号：US5459335A
公开(公告)日：1995-10-17
申请号：US106408
申请日：1993-08-13
申请人： Katsuki Matsushita , Shigeru Senbonmatsu , Tsuneo Yamazaki , Tadao Iwaki , Ryuichi Takano
发明人： Katsuki Matsushita , Shigeru Senbonmatsu , Tsuneo Yamazaki , Tadao Iwaki , Ryuichi Takano
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/02 , H01L21/20 , H01L21/762 , H01L27/12 , H01L23/14 , H01L23/15
CPC分类号： H01L21/76251 , H01L21/2007
摘要： A thin film semiconductor substrate for a display device includes a thin film semiconductor circuit layer formed on a single crystal semiconductor substrate and a support substrate formed over the thin film semiconductor circuit layer. An adhesive layer made of a fluorine-containing epoxy family adhesive is provided between the insulating layer and the support substrate. When the single crystal semiconductor substrate is removed, the yield rate in production of the thin film semiconductor substrate is greatly improved.
摘要翻译：用于显示装置的薄膜半导体衬底包括形成在单晶半导体衬底上的薄膜半导体电路层和形成在薄膜半导体电路层上的支撑衬底。在绝缘层和支撑基板之间设置由含氟环氧树脂系列粘合剂制成的粘合剂层。当去除单晶半导体衬底时，薄膜半导体衬底的制造中的成品率大大提高。

7. 发明授权

US5646432A Semiconductor thin film formed on a supporting substrate 失效
标题翻译：形成在支撑基板上的半导体薄膜
公开(公告)号：US5646432A
公开(公告)日：1997-07-08
申请号：US57987
申请日：1993-05-05
申请人： Tadao Iwaki , Tsuneo Yamazaki , Katsuki Matsushita , Shigeru Senbonmatsu , Ryuichi Takano
发明人： Tadao Iwaki , Tsuneo Yamazaki , Katsuki Matsushita , Shigeru Senbonmatsu , Ryuichi Takano
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , G06E3/00 , H01L21/02 , H01L21/20 , H01L21/304 , H01L21/336 , H01L21/762 , H01L27/12 , H01L29/78 , H01L29/786 , H01L27/01 , H01L23/48 , H01L29/00 , H01L31/032
CPC分类号： G02F1/13454 , G06E3/003 , H01L21/2007 , H01L27/1203 , G02F2202/105
摘要： A semiconductor substrate is provided which has a semiconductor on insulator structure but in which can be formed a thin film integrated circuit having electrical characteristics and microstructure equal to or of greater density than a silicon integrated circuit formed using a bulk single crystal silicon wafer. The semiconductor substrate has a structure which is formed of a sequentially layered single crystal silicon thin film sandwiched between a thermally oxidized silicon film and a silicon oxide or silicon nitride film, an element smoothing layer, a fluoro-epoxy series resin adhesive layer, and a supporting substrate. The single crystal silicon thin film can have integrated circuit devices formed in a sub-micron geometry similar to that of a bulk single crystal silicon. A transparent glass or a bulk single crystal silicon wafer can be used as a supporting substrate. Therefore the semiconductor thin film can integrate a highly fine, dense and compact semiconductor integrated circuit or semiconductor optical element. The semiconductor thin film element has a transparent optical detection region or optical modulation region with 100 million pixels or more.
摘要翻译：提供了半导体衬底，其具有半导体绝缘体结构，但是其中可以形成具有等于或者比具有大体积单晶硅晶片形成的硅集成电路更高密度的电特性和微结构的薄膜集成电路。半导体衬底具有由夹在热氧化硅膜和氧化硅或氮化硅膜之间的顺序层叠的单晶硅薄膜，元件平滑层，氟 - 环氧树脂粘合剂层和支撑衬底。单晶硅薄膜可以具有类似于大块单晶硅的亚微米几何形状的集成电路器件。可以使用透明玻璃或块状单晶硅晶片作为支撑基板。因此，半导体薄膜可以集成高精度，致密和紧凑的半导体集成电路或半导体光学元件。半导体薄膜元件具有1亿像素以上的透明光检测区域或光调制区域。

8. 发明授权

US06252322B1 Spindle motor 有权
标题翻译：主轴电机
公开(公告)号：US06252322B1
公开(公告)日：2001-06-26
申请号：US09411584
申请日：1999-10-01
申请人： Naoki Kawawada , Tadao Iwaki , Takahumi Suzuki , Hiromitsu Goto
发明人： Naoki Kawawada , Tadao Iwaki , Takahumi Suzuki , Hiromitsu Goto
IPC分类号： H02K516
CPC分类号： F16C17/107 , F16C33/107 , F16C2370/12 , G11B19/2009 , H02K5/1675
摘要： A spindle motor comprises a base, a stator coil connected to the base, and a sleeve-and-bearing unit connected to a central portion of the base. The sleeve-and-bearing unit has a sleeve and a bearing section mounted in the sleeve having a linear expansion coefficient greater than that of the sleeve. The sleeve has a groove disposed in an outer peripheral surface thereof for receiving an adhesive material for connecting the base to the outer peripheral surface of the sleeve. A rotor unit is connected to the sleeve-and-bearing unit for undergoing rotation relative to the sleeve-and-bearing unit. The rotor unit has a shaft section supported by the bearing section for undergoing rotation, a hub connected to the shaft section for rotation therewith, and a rotor magnet connected to the hub and disposed opposite to and spaced apart from the stator coil.
摘要翻译：主轴电动机包括基座，连接到基座的定子线圈和连接到基座的中心部分的套筒和轴承单元。套筒和承载单元具有套筒和安装在套筒中的轴承部分，线性膨胀系数大于套筒的线性膨胀系数。套筒具有设置在其外周表面中的槽，用于接收用于将基座连接到套筒的外周表面的粘合材料。转子单元连接到套筒和承载单元以相对于套筒和承载单元转动。转子单元具有由轴承部分支承以转动的轴部分，连接到轴部分以与其一起旋转的轮毂，以及连接到毂并且与定子线圈相对并间隔开的转子磁体。

9. 发明授权

US5800033A Image projecting apparatus 失效
标题翻译：图像投影仪
公开(公告)号：US5800033A
公开(公告)日：1998-09-01
申请号：US548455
申请日：1995-10-26
申请人： Yukiya Funanami , Yasuyuki Mitsuoka , Nobuyuki Kasama , Tadao Iwaki
发明人： Yukiya Funanami , Yasuyuki Mitsuoka , Nobuyuki Kasama , Tadao Iwaki
IPC分类号： G02F1/13 , G02B27/18 , G02F1/135 , G03B21/00 , H04N9/31 , G03B21/14
CPC分类号： H04N9/3105
摘要： An image projecting apparatus comprises a light source for emitting light, a spatial light modulating element, an illuminating optical system for irradiating a light from the light source to the spatial light modulating element, and a projecting optical system for projecting an image of the spatial light modulating element. The illuminating optical system or the projecting optical system comprises a telecentric optical system and a light shielding frame disposed at a focus position of the telecentric optical system for controlling an angular component of a luminous flux of light emitted by the light source or the spatial light modulating element, respectively, to adjust the quality of the projected image.
摘要翻译：图像投影装置包括用于发光的光源，空间光调制元件，用于将来自光源的光照射到空间光调制元件的照明光学系统，以及用于投影空间光的图像的投影光学系统调制元件。照明光学系统或投影光学系统包括远心光学系统和设置在远心光学系统的焦点位置处的遮光框架，用于控制由光源发射的光的光束的角分量或空间光调制元素，分别调整投影图像的质量。

10. 发明授权

US5745205A Method of introducing slightly titlting homeotropic orientation into liquid crystal, liquid crystal electro-optical device, and liquid crystal light valve 失效
标题翻译：向液晶，液晶电光装置和液晶光阀引入轻微滴定的垂直取向的方法
公开(公告)号：US5745205A
公开(公告)日：1998-04-28
申请号：US554681
申请日：1995-11-07
申请人： Naoki Kato , Rieko Sekura , Tadao Iwaki
发明人： Naoki Kato , Rieko Sekura , Tadao Iwaki
IPC分类号： G02F1/1337
CPC分类号： G02F1/133734 , G02F2001/133742
摘要： An object of the invention is to provide a method of introducing sightly tilting homeotropic orientation into a liquid crystal layer by oblique evaporation of inorganic material by one step, and a further object is to apply this method to provide a reliable liquid crystal electro-optical device or a liquid crystal light valve. FIG. 1 shows an example of the method to introduce the slightly tilting homeotropic orientation into the liquid crystal layer by the one step of the oblique evaporation of the inorganic material. The orientation film is formed by the one step oblique evaporation. An incident angle is set from 45.degree. to 70.degree. relative to a parallel direction of the substrate, and a film thickness is set to 20 nm through 500 nm measured during the film deposition by a film thickness gage disposed at a vertical distance equal between the evaporation source and the substrate. The orientation film is used in the liquid crystal electro-optical device or the liquid crystal light valve.
摘要翻译：本发明的目的是提供一种通过一步法将无机材料倾斜蒸发而将视力倾斜的垂直取向引入液晶层的方法，并且另一个目的是应用该方法来提供可靠的液晶电光装置或液晶光阀。图。图1示出了通过无机材料的倾斜蒸发的一个步骤将稍微倾斜的垂直取向引入液晶层的方法的示例。取向膜通过一步倾斜蒸发形成。入射角相对于基板的平行方向为45度〜70度，膜成膜时的膜厚为20nm〜500nm，膜厚设定为蒸发源和底物。取向膜用于液晶电光装置或液晶光阀。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式