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1. 发明申请

US20090140240A1 ORGANIC THIN FILM TRANSISTOR 审中-公开
标题翻译：有机薄膜晶体管
公开(公告)号：US20090140240A1
公开(公告)日：2009-06-04
申请号：US12332502
申请日：2008-12-11
申请人： Hiroaki NAKAMURA , Masatoshi Saitou , Tetsuo Tsutsui , Takeshi Yasuda
发明人： Hiroaki NAKAMURA , Masatoshi Saitou , Tetsuo Tsutsui , Takeshi Yasuda
IPC分类号： H01L51/30
CPC分类号： H01L51/0074 , C07C15/52 , C07C22/08 , C07C25/24 , C07C43/215 , H01L51/0023 , H01L51/0038 , H01L51/005 , H01L51/0058 , H01L51/0068 , H01L51/0071 , H01L51/0072 , H01L51/0076 , H01L51/052 , H01L51/0525 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： A thin film transistor comprising at least three terminals consisting of a gate electrode, a source electrode and a drain electrode; an insulator layer and an organic semiconductor layer on a substrate, which controls its electric current flowing between the source and the drain by applying a electric voltage across the gate electrode, wherein the organic semiconductor layer comprises a styryl derivative having a styryl structure expressed by C6H5—CH═CH—C6H5, or a distyryl structure expressed by C6H5—CH═CH—C6H5—CH═CH—C6H5 each without molecular weight distribution. The transistor has a fast response speed (driving speed), and further, achieves a large On/Off ratio getting an enhanced performance as a transistor.
摘要翻译：一种薄膜晶体管，包括由栅电极，源电极和漏极组成的至少三个端子; 绝缘体层和有机半导体层，其通过在栅电极上施加电压来控制其在源极和漏极之间流动的电流，其中有机半导体层包含具有由C6H5表示的苯乙烯基结构的苯乙烯基衍生物或者由不具有分子量分布的C 6 H 5 -CH-C 6 H 5 -CH-CH-C 6 H 5表示的二苯乙烯基结构。晶体管具有快速的响应速度（驱动速度），并且进一步实现了作为晶体管的增强性能的大的开/关比。

2. 发明申请

US20090159878A1 ORGANIC THIN FILM TRANSISTOR 有权
公开(公告)号：US20090159878A1
公开(公告)日：2009-06-25
申请号：US12388119
申请日：2009-02-18
申请人： Hiroaki Nakamura , Masatoshi Saitou , Tetsuo Tsutsui , Takeshi Yasuda
发明人： Hiroaki Nakamura , Masatoshi Saitou , Tetsuo Tsutsui , Takeshi Yasuda
IPC分类号： H01L51/30
CPC分类号： H01L51/0074 , C07C15/52 , C07C22/08 , C07C25/24 , C07C43/215 , H01L51/0023 , H01L51/0038 , H01L51/005 , H01L51/0058 , H01L51/0068 , H01L51/0071 , H01L51/0072 , H01L51/0076 , H01L51/052 , H01L51/0525 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： A thin film transistor comprising at least three terminals consisting of a gate electrode, a source electrode and a drain electrode; an insulator layer and an organic semiconductor layer on a substrate, which controls its electric current flowing between the source and the drain by applying a electric voltage across the gate electrode, wherein the organic semiconductor layer comprises a styryl derivative having a styryl structure expressed by C6H5—CH═CH—C6H5, or a distyryl structure expressed by C6H5—CH═CH—C6H5—CH═CH—C6H5 each without molecular weight distribution. The transistor has a fast response speed (driving speed), and further, achieves a large On/Off ratio getting an enhanced performance as a transistor.

3. 发明授权

US07521710B2 Organic thin film transistor 有权
标题翻译：有机薄膜晶体管
公开(公告)号：US07521710B2
公开(公告)日：2009-04-21
申请号：US11369862
申请日：2006-03-08
申请人： Hiroaki Nakamura , Masatoshi Saitou , Tetsuo Tsutsui , Takeshi Yasuda
发明人： Hiroaki Nakamura , Masatoshi Saitou , Tetsuo Tsutsui , Takeshi Yasuda
IPC分类号： H01L51/30
CPC分类号： H01L51/0074 , C07C15/52 , C07C22/08 , C07C25/24 , C07C43/215 , H01L51/0023 , H01L51/0038 , H01L51/005 , H01L51/0058 , H01L51/0068 , H01L51/0071 , H01L51/0072 , H01L51/0076 , H01L51/052 , H01L51/0525 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： A thin film transistor comprising at least three terminals consisting of a gate electrode, a source electrode and a drain electrode; an insulator layer and an organic semiconductor layer on a substrate, which controls its electric current flowing between the source and the drain by applying a electric voltage across the gate electrode, wherein the organic semiconductor layer comprises a styryl derivative having a styryl structure expressed by C6H5—CH═CH—C6H5, or a distyryl structure expressed by C6H5—CH═CH—C6H5—CH═CH—C6H5 each without molecular weight distribution. The transistor has a fast response speed (driving speed), and further, achieves a large On/Off ratio getting an enhanced performance as a transistor.
摘要翻译：一种薄膜晶体管，包括由栅电极，源电极和漏极组成的至少三个端子; 绝缘体层和有机半导体层，其通过在栅电极上施加电压来控制其在源极和漏极之间流动的电流，其中有机半导体层包含具有由C6H5表示的苯乙烯基结构的苯乙烯基衍生物或者由不具有分子量分布的C 6 H 5 -CH-C 6 H 5 -CH-CH-C 6 H 5表示的二苯乙烯基结构。晶体管具有快速的响应速度（驱动速度），并且进一步实现了作为晶体管的增强性能的大的开/关比。

4. 发明授权

US08445894B2 Organic thin film transistor 有权
标题翻译：有机薄膜晶体管
公开(公告)号：US08445894B2
公开(公告)日：2013-05-21
申请号：US12388119
申请日：2009-02-18
申请人： Hiroaki Nakamura , Masatoshi Saitou , Tetsuo Tsutsui , Takeshi Yasuda
发明人： Hiroaki Nakamura , Masatoshi Saitou , Tetsuo Tsutsui , Takeshi Yasuda
IPC分类号： H01L29/08
CPC分类号： H01L51/0074 , C07C15/52 , C07C22/08 , C07C25/24 , C07C43/215 , H01L51/0023 , H01L51/0038 , H01L51/005 , H01L51/0058 , H01L51/0068 , H01L51/0071 , H01L51/0072 , H01L51/0076 , H01L51/052 , H01L51/0525 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： A thin film transistor comprising at least three terminals consisting of a gate electrode, a source electrode and a drain electrode; an insulator layer and an organic semiconductor layer on a substrate, which controls its electric current flowing between the source and the drain by applying a electric voltage across the gate electrode, wherein the organic semiconductor layer comprises a styryl derivative having a styryl structure expressed by C6H5—CH═CH—C6H5, or a distyryl structure expressed by C6H5—CH═CH—C6H5—CH═CH—C6H5 each without molecular weight distribution. The transistor has a fast response speed (driving speed), and further, achieves a large On/Off ratio getting an enhanced performance as a transistor.
摘要翻译：一种薄膜晶体管，包括由栅电极，源电极和漏极组成的至少三个端子; 绝缘体层和有机半导体层，其通过在栅电极上施加电压来控制其在源极和漏极之间流动的电流，其中有机半导体层包含具有由C6H5表示的苯乙烯基结构的苯乙烯基衍生物 -CH = CH-C6H5或由不具有分子量分布的C 6 H 5 -CH = CH-C 6 H 5 -CH = CH-C 6 H 5表示的二苯乙烯基结构。晶体管具有快速的响应速度（驱动速度），并且进一步实现了作为晶体管的增强性能的大的开/关比。

5. 发明申请

US20070187674A1 Organic thin film transistor 有权
标题翻译：有机薄膜晶体管
公开(公告)号：US20070187674A1
公开(公告)日：2007-08-16
申请号：US11369862
申请日：2006-03-08
申请人： Hiroaki Nakamura , Masatoshi Saitou , Tetsuo Tsutsui , Takeshi Yasuda
发明人： Hiroaki Nakamura , Masatoshi Saitou , Tetsuo Tsutsui , Takeshi Yasuda
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H01L51/0074 , C07C15/52 , C07C22/08 , C07C25/24 , C07C43/215 , H01L51/0023 , H01L51/0038 , H01L51/005 , H01L51/0058 , H01L51/0068 , H01L51/0071 , H01L51/0072 , H01L51/0076 , H01L51/052 , H01L51/0525 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： A thin film transistor comprising at least three terminals consisting of a gate electrode, a source electrode and a drain electrode; an insulator layer and an organic semiconductor layer on a substrate, which controls its electric current flowing between the source and the drain by applying a electric voltage across the gate electrode, wherein the organic semiconductor layer comprises a styryl derivative having a styryl structure expressed by C6H5—CH═CH—C6H5, or a distyryl structure expressed by C6H5—CH═CH—C6H5—CH═CH—C6H5 each without molecular weight distribution. The transistor has a fast response speed (driving speed), and further, achieves a large On/Off ratio getting an enhanced performance as a transistor.
摘要翻译：一种薄膜晶体管，包括由栅电极，源电极和漏电极组成的至少三个端子; 绝缘体层和衬底上的有机半导体层，其通过在栅电极上施加电压来控制其在源极和漏极之间流动的电流，其中有机半导体层包含具有由C表示的苯乙烯基结构的苯乙烯基衍生物或者由C _{表示的二苯乙烯基结构，或者由C > 6 H 5 -CH-CH-C 6 H 5 -CH-CH-C 6 各自不具有分子量分布。晶体管具有快速的响应速度（驱动速度），并且进一步实现了作为晶体管的增强性能的大的开/关比。}

6. 发明授权

US07932177B2 Field-effect transistor 有权
标题翻译：场效应晶体管
公开(公告)号：US07932177B2
公开(公告)日：2011-04-26
申请号：US12199446
申请日：2008-08-27
申请人： Tomoaki Onoue , Takeshi Yasuda , Tetsuo Tsutsui
发明人： Tomoaki Onoue , Takeshi Yasuda , Tetsuo Tsutsui
IPC分类号： H01L21/4763
CPC分类号： H01L51/0533 , H01L21/31691 , H01L51/0537
摘要： A field-effect transistor is provided, which includes an organic thin film and which can realize a low threshold voltage while a stable, high field-effect mobility is ensured at the same time. In a field-effect transistor provided with a gate electrode, a source electrode, a drain electrode, a semiconductor film, a gate insulating film, and a substrate, the gate insulating film is formed from a plurality of insulating layers. Here, a first insulating layer in contact with the semiconductor film is formed from poly-p-xylylene formed into a film by a CVD method. A second insulating layer is formed from, for example, cyanoethylpullulan, and the dielectric constant is specified to be higher than that of the first insulating layer.
摘要翻译：提供场效应晶体管，其包括有机薄膜，并且可以在同时确保稳定的高场效应迁移率的同时实现低阈值电压。在设置有栅电极，源极，漏极，半导体膜，栅极绝缘膜和基板的场效应晶体管中，栅极绝缘膜由多个绝缘层形成。这里，与半导体膜接触的第一绝缘层由通过CVD法形成为膜的聚对二甲苯形成。第二绝缘层由例如氰乙基普兰兰形成，并且介电常数规定为高于第一绝缘层的介电常数。

7. 发明申请

US20090095954A1 FIELD-EFFECT TRANSISTOR 有权
标题翻译：场效应晶体管
公开(公告)号：US20090095954A1
公开(公告)日：2009-04-16
申请号：US12199446
申请日：2008-08-27
申请人： Tomoaki Onoue , Takeshi Yasuda , Tetsuo Tsutsui
发明人： Tomoaki Onoue , Takeshi Yasuda , Tetsuo Tsutsui
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/0533 , H01L21/31691 , H01L51/0537
摘要： A field-effect transistor is provided, which includes an organic thin film and which can realize a low threshold voltage while a stable, high field-effect mobility is ensured at the same time. In a field-effect transistor provided with a gate electrode, a source electrode, a drain electrode, a semiconductor film, a gate insulating film, and a substrate, the gate insulating film is formed from a plurality of insulating layers. Here, a first insulating layer in contact with the semiconductor film is formed from poly-p-xylylene formed into a film by a CVD method. A second insulating layer is formed from, for example, cyanoethylpullulan, and the dielectric constant is specified to be higher than that of the first insulating layer.
摘要翻译：提供场效应晶体管，其包括有机薄膜，并且可以在同时确保稳定的高场效应迁移率的同时实现低阈值电压。在设置有栅电极，源极，漏极，半导体膜，栅极绝缘膜和基板的场效应晶体管中，栅极绝缘膜由多个绝缘层形成。这里，与半导体膜接触的第一绝缘层由通过CVD法形成为膜的聚对二甲苯形成。第二绝缘层由例如氰乙基普兰兰形成，并且介电常数规定为高于第一绝缘层的介电常数。

8. 发明授权

US07504049B2 Electrode device for organic device, electronic device having electrode device for organic device, and method of forming electrode device for organic device 有权
标题翻译：用于有机器件的电极器件，具有用于有机器件的电极器件的电子器件以及用于形成有机器件的电极器件的方法
公开(公告)号：US07504049B2
公开(公告)日：2009-03-17
申请号：US10919334
申请日：2004-08-17
申请人： Tetsuo Tsutsui , Daisuke Kumaki
发明人： Tetsuo Tsutsui , Daisuke Kumaki
IPC分类号： H01B1/00
CPC分类号： H01L51/5278 , H01B1/20 , H01B1/22 , H01L51/0021 , H01L51/0059 , H01L51/0081 , H01L51/0512 , H01L51/5221 , Y10T428/2913
摘要： To provide an electrode for an organic device which can realize a hole injection function and/or an electron injection function from a totally different point of view from metal donor doping. A composite material in which conductive particles of a particulate conductive inorganic compound (the diameter is 1 (nm) to 100 (nm), preferably, 1 (nm) to 20 (nm)) are dispersed in one or plural kinds of organic compounds 101 is layered on a surface of an organic layer 110 of an organic device where an electrode is to be formed to form an electrode for an organic device 100. As to the thus formed electrode, since the densely dispersed conductive particles 102 have large specific surface area, interaction between the conductive particles 102 and the organic compound 101 realizes a function of a donor or an acceptor. Besides, since adhesion with the organic layer 110 is high for the existence of the matrix of the organic compound 101, the electrode is suitable for an organic device.
摘要翻译：为了提供一种用于有机器件的电极，其可以从金属给体掺杂的完全不同的角度实现空穴注入功能和/或电子注入功能。将颗粒状导电无机化合物（直径为1（nm）〜100（nm），优选为1（nm）〜20（nm））的导电粒子分散在一种或多种有机化合物101中的复合材料层叠在要形成电极的有机器件的有机层110的表面上以形成有机器件100的电极。对于这样形成的电极，由于致密分散的导电粒子102具有大的比表面积，导电颗粒102和有机化合物101之间的相互作用实现了供体或受体的功能。此外，由于与有机层110的粘合对于有机化合物101的基体的存在而高，所以电极适合于有机装置。

9. 发明授权

US07414364B2 Display element and method of manufacturing the same 有权
标题翻译：显示元件及其制造方法
公开(公告)号：US07414364B2
公开(公告)日：2008-08-19
申请号：US10978740
申请日：2004-11-01
申请人： Tetsuo Tsutsui , Kazuhiro Sumioka
发明人： Tetsuo Tsutsui , Kazuhiro Sumioka
IPC分类号： H01L51/50 , H05B33/04
CPC分类号： H01L51/52 , H01L27/3281 , H01L51/003 , H01L51/5246 , H01L51/5253 , H01L51/5262 , H01L2227/326
摘要： There is provided a display element capable of efficiently emitting generated light externally and a method of manufacturing the display element, without damaging an organic electroluminescent layer. First, a transparent electrode protection material (11) is deposited on a first holding substrate (10); then organic electroluminescent light-emitting elements (12, 13, 14) are manufactured thereon; and then after sealing and holding with a sealing material (15) and a second holding substrate (16), the first holding substrate (10) and a transparent electrode protection material (11) are removed by etching or the like. According to the present invention, the removal of the first holding substrate (10) enables improvement of the emission rate generated in the electroluminescent layer (13), and improvement of brightness and contrast in the display element.
摘要翻译：提供了能够有效地发射外部生成的光的显示元件和制造显示元件的方法，而不损坏有机电致发光层。首先，在第一保持基板（10）上淀积透明电极保护材料（11）。然后在其上制造有机电致发光元件（12,13,14）; 然后在用密封材料（15）和第二保持基板（16）密封固定之后，通过蚀刻等去除第一保持基板（10）和透明电极保护材料（11）。根据本发明，第一保持基板（10）的去除能够改善在电致发光层（13）中产生的发射速率，并且改善显示元件中的亮度和对比度。

10. 发明授权

US07317282B2 Self light-emitting device 有权
标题翻译：自发光装置
公开(公告)号：US07317282B2
公开(公告)日：2008-01-08
申请号：US11021070
申请日：2004-12-22
申请人： Tetsuo Tsutsui , Toshimitsu Konuma , Mayumi Mizukami
发明人： Tetsuo Tsutsui , Toshimitsu Konuma , Mayumi Mizukami
IPC分类号： H01J1/62 , H05B33/00
CPC分类号： H01L51/5262 , G02F1/133602 , H01L27/3244 , H01L27/3281 , H01L51/525 , H01L51/5271 , H01L2251/5315 , H01L2251/5361 , H01L2251/558
摘要： To provide a method of improving an efficiency for extracting light in a self light-emitting device using an organic EL material. In the self light-emitting device having a structure in which an EL layer (102) is sandwiched between a transparent electrode (103) and a cathode (101), a film thickness of the EL layer (102) and a film thickness of the transparent electrode (102) are equivalent to the film thicknesses in which there is no occurrence of a guided light, and an inert gas is filled in a space between the transparent electrode (103) and a cover material (105).
摘要翻译：提供一种提高使用有机EL材料的自发光装置中提取光的效率的方法。在具有EL层（102）夹在透明电极（103）和阴极（101）之间的结构的自发光器件中，EL层（102）的膜厚度和透明电极（102）与没有引导光的膜厚相当，在透明电极（103）和覆盖材料（105）之间的空间填充惰性气体。

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