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1. 发明授权

US4952421A Method for repairing a pattern 失效
标题翻译：修复图案的方法
公开(公告)号：US4952421A
公开(公告)日：1990-08-28
申请号：US269756
申请日：1988-11-08
申请人： Hiroaki Morimoto , Hiroshi Onoda , Tadashi Nishioka
发明人： Hiroaki Morimoto , Hiroshi Onoda , Tadashi Nishioka
IPC分类号： G03F1/00 , G03F1/72 , G03F1/74 , H01L21/027 , H01L21/768
CPC分类号： G03F1/74 , H01L21/76892
摘要： The method for repairing the pattern is to repair the lacking portion of the pattern included in the X-ray exposure mask with the WF.sub.6 gas being filled in the vicinity thereof, wherein the focused ion beam irradiates the defect portion, whereby the WF.sub.6 gas is decomposed to form a tungsten thin film so as to at least fill the lacking portion. On this occasion, the focused ion beam is successively applied so that it is always in contact with the edge of the tungsten thin film constituting the pattern.
摘要翻译：用于修复图案的方法是修补包含在X射线曝光掩模中的图案的缺少部分，其中WF6气体被填充在其附近，其中聚焦离子束照射缺陷部分，由此WF6气体被分解以形成钨薄膜，以便至少填充缺少部分。在这种情况下，聚焦离子束被连续地施加，使得其总是与构成图案的钨薄膜的边缘接触。

2. 发明授权

US4843238A Method for identifying a blistered film in layered films 失效
标题翻译：用于识别层状膜中起泡膜的方法
公开(公告)号：US4843238A
公开(公告)日：1989-06-27
申请号：US155101
申请日：1988-02-11
申请人： Tadashi Nishioka , Hiroaki Morimoto , Yoji Mashiko , Hiroshi Koyama
发明人： Tadashi Nishioka , Hiroaki Morimoto , Yoji Mashiko , Hiroshi Koyama
IPC分类号： H01L21/66 , G01N23/225 , G01Q60/00 , H01J37/28
CPC分类号： G01N23/2255
摘要： In a method for identifying blistered film in layered films, a focused ion beam irradiates the approximate center of the blister and a portion which has no blister, and individual sets of the measurement data relating to the respective numbers of secondary electrons generated by the irradiation are compared to determine which film of layered films has blistered. Since the focused ion beam is employed, the present method is applicable to the detection of a small blister in layered films. Furthermore, since an enormous number of cutting operations as might have been required in the prior art are eliminated, the present method can be carried out, stably, positively and economically.
摘要翻译：在层状膜中识别起泡膜的方法中，聚焦离子束照射泡囊的大致中心和没有起泡的部分，并且与由照射产生的二次电子的相应数量有关的各组测量数据是相比之下确定哪一层分层膜已经起泡。由于采用聚焦离子束，因此本方法适用于分层膜中小泡的检测。此外，由于消除了现有技术中可能需要的大量切割操作，因此可以稳定，积极和经济地执行本方法。

3. 发明授权

US4962059A Process for forming electrodes for semiconductor devices using focused ion beam deposition 失效
标题翻译：使用聚焦离子束沉积形成用于半导体器件的电极的工艺
公开(公告)号：US4962059A
公开(公告)日：1990-10-09
申请号：US338233
申请日：1989-04-14
申请人： Tadashi Nishioka , Yoji Mashiko , Hiroaki Morimoto , Hiroshi Koyama
发明人： Tadashi Nishioka , Yoji Mashiko , Hiroaki Morimoto , Hiroshi Koyama
IPC分类号： H01L21/768
CPC分类号： H01L21/76877 , Y10S148/02 , Y10S148/05 , Y10S148/131 , Y10S148/158
摘要： A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process includes the steps of forming an electrically conductive film on the electrically insulating coating, forming an electrode to be connected to an external circuit on the electrically conductive film at a position overlying the electrically conductive portion by exposing portions of the electrically insulating coating and the first electrically conductive film to a converged ion beam, electrically connecting the electrode to the exposed portions of the electrically conductive film, and removing the portions of the electrically conductive film not covered by the electrode. As a result, the likelihood of breakdown of the internal circuit of the semiconductor device connected to the electrically conductive portion while the electrode is being formed is greatly reduced.

4. 发明授权

US5043290A Process for forming electrodes for semiconductor devices by focused ion beam technology 失效
标题翻译：通过聚焦离子束技术形成半导体器件电极的工艺
公开(公告)号：US5043290A
公开(公告)日：1991-08-27
申请号：US338274
申请日：1989-04-14
申请人： Tadashi Nishioka , Yoji Mashiko , Hiroaki Morimoto , Hiroshi Koyama
发明人： Tadashi Nishioka , Yoji Mashiko , Hiroaki Morimoto , Hiroshi Koyama
IPC分类号： H01L21/768
CPC分类号： H01L21/76877 , Y10S148/02 , Y10S148/05 , Y10S148/131 , Y10S148/158
摘要： A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process includes the steps of forming an electrically conductive film on the electrically insulating coating, forming an electrode to be connected to an external circuit on the electrically conductive film at a position overlying the electrically conductive portion by exposing portions of the electrically insulating coating and the first electrically conductive film to a converged ion beam, electrically connecting the electrode to the exposed portions of the electrically conductive film, and removing the portions of the electrically conductive film not covered by the electrode. As a result, the likelihood of breakdown of the internal circuit of the semiconductor device connected to the electrically conductive portion while the electrode is being formed is greatly reduced.

5. 发明授权

US4948749A Process for forming electrodes for semiconductor devices 失效
标题翻译：用于形成用于半导体器件的电极的工艺
公开(公告)号：US4948749A
公开(公告)日：1990-08-14
申请号：US338236
申请日：1989-04-14
申请人： Tadashi Nishioka , Yoji Mashiko , Hiroaki Morimoto , Hiroshi Koyama
发明人： Tadashi Nishioka , Yoji Mashiko , Hiroaki Morimoto , Hiroshi Koyama
IPC分类号： H01L21/60 , H01L21/768
CPC分类号： H01L21/76897 , H01L21/76877 , Y10S148/05
摘要： A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process includes the steps of forming an electrically conductive film on the electrically insulating coating, forming an electrode to be connected to an external circuit on the electrically conductive film at a position overlying the electrically conductive portion by exposing portions of the electrically insulating coating and the first electrically conductive film to a converged ion beam, electrically connectig the electrode to the exposed portions of the electrically conductive film, and removing the portions of the electrically conductive film not covered by the electrode. As a result, the likelihood of breakdown of the internal circuit of the semiconductor device connected to the electrically conductive portion while the electrode is being formed is greatly reduced.
摘要翻译：一种用于形成具有半导体衬底的半导体器件的电极和由电绝缘涂层覆盖和保护的导电部分的工艺。该方法包括以下步骤：在电绝缘涂层上形成导电膜，在电绝缘涂层的一部分暴露在导电部分上方的位置，形成与导电膜上的外部电路连接的电极，将第一导电膜连接到会聚离子束，将电极电连接到导电膜的暴露部分，以及去除未被电极覆盖的导电膜的部分。结果，在电极形成时连接到导电部分的半导体器件的内部电路的击穿的可能性大大降低。

6. 发明授权

US4853341A Process for forming electrodes for semiconductor devices using focused ion beams 失效
标题翻译：使用聚焦离子束形成用于半导体器件的电极的工艺
公开(公告)号：US4853341A
公开(公告)日：1989-08-01
申请号：US118031
申请日：1987-11-09
申请人： Tadashi Nishioka , Yoji Mashiko , Hiroaki Morimoto , Hiroshi Koyama
发明人： Tadashi Nishioka , Yoji Mashiko , Hiroaki Morimoto , Hiroshi Koyama
IPC分类号： H01L21/768
CPC分类号： H01L21/76877 , Y10S148/02 , Y10S148/05 , Y10S148/131 , Y10S148/158
摘要： A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process including the steps of forming an electrically conductive film on the electrically insulating coating, forming an electrode to be connected to an external circuit on the electrically conductive film at a position overlying the electrically conductive portion by exposing portions of the electrically insulating coating and the first electrically conductive film to a converged ion beam, electrically connecting the electrode to the exposed portions of the electrically conductive film, and removing the portions of the electrically conductive film not covered by the electrode. As a result, the likelihood of breakdown of the internal circuit of the semiconductor device connected to the electrically conductive portion while the electrode is being formed in greatly reduced.
摘要翻译：一种用于形成具有半导体衬底的半导体器件的电极和由电绝缘涂层覆盖和保护的导电部分的工艺。该方法包括以下步骤：在电绝缘涂层上形成导电膜，通过暴露电绝缘涂层的部分和形成在导电膜上方的与外部电路连接的电极，覆盖导电部分第一导电膜到会聚的离子束，将电极电连接到导电膜的暴露部分，以及去除未被电极覆盖的导电膜的部分。结果，在电极形成时连接到导电部分的半导体器件的内部电路的击穿的可能性大大降低。

7. 发明授权

US5273935A Method of controlling etching with a focused charged beam by detecting electrical current or secondary electrons 失效
标题翻译：通过检测电流或二次电子来控制聚焦带电束的蚀刻的方法
公开(公告)号：US5273935A
公开(公告)日：1993-12-28
申请号：US501275
申请日：1990-03-29
申请人： Hiroaki Morimoto , Hiroshi Onoda
发明人： Hiroaki Morimoto , Hiroshi Onoda
IPC分类号： H01L21/302 , H01J37/304 , H01L21/3065 , H01L21/311 , H01L21/66 , H01L21/263 , H01L21/42
CPC分类号： B24B37/013 , H01J37/304 , H01L21/31116 , H01L22/26 , H01J2237/24564 , H01J2237/30466
摘要： Accurate etching control using focused ion beams can be achieved if the etching is performed in accordance with a detection signal obtained by detecting an electric current passing from a semiconductor device to ground or secondary electrons generated when the charged beams are spirally applied to a predetermined area during the charged-beam scanning operation. Therefore, the end point of the process can be accurately detected and uniform processing results can be obtained. As a result, precise etching control can be performed and a reliable semiconductor device can be manufactured.
摘要翻译：如果根据通过检测从半导体器件到地面的电流检测到的检测信号或者当将带电波束螺旋地施加到预定区域时产生的二次电子进行蚀刻，则可以实现使用聚焦离子束的精确蚀刻控制带电束扫描操作。因此，可以准确地检测出该过程的终点，并获得均匀的处理结果。结果，可以进行精确的蚀刻控制，并且可以制造可靠的半导体器件。

8. 发明申请

US20050218815A1 Power generation controller of vehicle power generator 有权
标题翻译：车辆发电机发电控制器
公开(公告)号：US20050218815A1
公开(公告)日：2005-10-06
申请号：US11092720
申请日：2005-03-30
申请人： Masaru Kobayashi , Kiyoharu Anzai , Hiroaki Morimoto
发明人： Masaru Kobayashi , Kiyoharu Anzai , Hiroaki Morimoto
IPC分类号： H02J7/24 , B60Q1/26 , B60R16/02 , H02J7/14 , H02P9/04 , H02P9/14 , H02P9/26 , H02P9/30
CPC分类号： H02J7/245 , H02P9/305 , Y02T10/92
摘要： The present invention relates to a power generation controller of a vehicle power generator, which includes: voltage detection means for sampling a voltage of a battery based on a reference clock signal; duty range setting means for setting a range for an ON/OFF ratio of a field switching element from the rotation speed of the power generator; control duty computation means for computing the ON/OFF ratio of the field switching element based on thus set duty range from a deviation between a power generation target voltage and voltage information as a result of sampling; and field PWM drive means for controlling the ON/OFF switching operation of the field switching element with an interval based on the reference clock signal from the computed ON/OFF ratio.
摘要翻译：本发明涉及车辆发电机的发电控制器，其包括：基于参考时钟信号对电池的电压进行采样的电压检测装置; 占空范围设定装置，用于根据发电机的转速设定场切换元件的ON / OFF比的范围; 控制占空比计算装置，用于根据由此产生的目标电压与作为采样的结果的电压信息之间的偏差而设定的占空比范围来计算场开关元件的导通/截止比; 以及场PWM驱动装置，用于基于来自所计算的ON / OFF比的参考时钟信号，间隔地控制场开关元件的ON / OFF切换操作。

9. 发明授权

US07227339B2 Power generation controller of vehicle power generator 有权
标题翻译：车辆发电机发电控制器
公开(公告)号：US07227339B2
公开(公告)日：2007-06-05
申请号：US11092720
申请日：2005-03-30
申请人： Masaru Kobayashi , Kiyoharu Anzai , Hiroaki Morimoto
发明人： Masaru Kobayashi , Kiyoharu Anzai , Hiroaki Morimoto
IPC分类号： H02H7/06 , H02P9/00 , H02P11/00 , H02P6/02 , H02K1/22
CPC分类号： H02J7/245 , H02P9/305 , Y02T10/92
摘要： The present invention relates to a power generation controller of a vehicle power generator, which includes: voltage detection means for sampling a voltage of a battery based on a reference clock signal; duty range setting means for setting a range for an ON/OFF ratio of a field switching element from the rotation speed of the power generator; control duty computation means for computing the ON/OFF ratio of the field switching element based on thus set duty range from a deviation between a power generation target voltage and voltage information as a result of sampling; and field PWM drive means for controlling the ON/OFF switching operation of the field switching element with an interval based on the reference clock signal from the computed ON/OFF ratio.
摘要翻译：本发明涉及车辆发电机的发电控制器，其包括：基于参考时钟信号对电池的电压进行采样的电压检测装置; 占空范围设定装置，用于根据发电机的转速设定场切换元件的ON / OFF比的范围; 控制占空比计算装置，用于根据由此产生的目标电压与作为采样的结果的电压信息之间的偏差而设定的占空比范围来计算场开关元件的导通/截止比; 以及场PWM驱动装置，用于基于来自所计算的ON / OFF比的参考时钟信号，间隔地控制场开关元件的ON / OFF切换操作。

10. 发明授权

US5149973A Apparatus for wiring semiconductor device using energy beam and wiring method by using the same 失效
标题翻译：使用能量束布线半导体器件的装置及其使用的布线方法
公开(公告)号：US5149973A
公开(公告)日：1992-09-22
申请号：US723094
申请日：1991-06-28
申请人： Hiroaki Morimoto
发明人： Hiroaki Morimoto
IPC分类号： H01L21/3205 , B23K15/00 , B23K15/02 , H01J37/305 , H01J37/317
CPC分类号： H01J37/3178 , B23K15/0013 , B23K15/004 , B23K15/02 , H01J37/3056 , H01J2237/31737
摘要： Disclosed are an apparatus for wiring a semiconductor device and a wiring method therefor which allow a manufacturing step to be simplified without deteriorating an insulation characteristic of an aerial wiring. The semiconductor device wiring apparatus includes a first beam column 1a disposed above a substrate 50 and a second beam column 1b disposed horizontally thereto. Therefore, a wiring portion of the aerial wiring to be formed upwardly is formed by using the first beam column 1a and a wiring portion to be formed horizontally to wiring layer of the substrate 50 is formed by using the second beam column, which results in that no insulating film for the aerial wiring is required to simplify manufacturing steps.
摘要翻译：公开了一种用于布线半导体器件的设备及其布线方法，其允许简化制造步骤，而不会降低空中布线的绝缘特性。半导体器件布线装置包括设置在基板50上方的第一梁柱1a和水平设置的第二梁柱1b。因此，通过使用第一梁柱1a形成向上形成的架空布线的布线部分，并且通过使用第二梁柱形成水平地形成在基板50的布线层上的布线部分，结果是不需要用于空中布线的绝缘膜来简化制造步骤。

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