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1. 发明授权

US07583716B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US07583716B2
公开(公告)日：2009-09-01
申请号：US11072413
申请日：2005-03-07
申请人： Hiroaki Matsumura , Yasuhisa Kotani
发明人： Hiroaki Matsumura , Yasuhisa Kotani
IPC分类号： H01S5/00
CPC分类号： H01S5/16 , B82Y20/00 , H01S5/0202 , H01S5/0224 , H01S5/024 , H01S5/1017 , H01S5/2009 , H01S5/22 , H01S5/3216 , H01S5/34333 , H01S2301/18 , H01S2304/12
摘要： A semiconductor laser device having a far field pattern (FFP) with a Gaussian distribution that is less prone to ripples is provided. The semiconductor laser device comprises a semiconductor layer having a first conductivity type, an active layer, a semiconductor layer having a second conductivity type, a waveguide region formed by restricting current within a stripe-shaped region in the semiconductor layer of the second conductive type, and a resonance surface provided on an end face substantially perpendicular to the waveguide region. A plurality of recesses is formed at positions spaced from the waveguide region in the semiconductor layer of the second conductivity type in a region adjacent to the resonance surface.
摘要翻译：提供了具有不易于产生波纹的高斯分布的远场图案（FFP）的半导体激光器件。半导体激光器件包括具有第一导电类型的半导体层，有源层，具有第二导电类型的半导体层，通过限制第二导电类型的半导体层中的条形区域内的电流形成的波导区域，以及设置在基本上垂直于波导区域的端面上的共振表面。在与谐振表面相邻的区域中，在与第二导电类型的半导体层中的波导区间隔开的位置形成有多个凹部。

2. 发明申请

US20060078024A1 Semiconductor laser device 有权
公开(公告)号：US20060078024A1
公开(公告)日：2006-04-13
申请号：US11072413
申请日：2005-03-07
申请人： Hiroaki Matsumura , Yasuhisa Kotani
发明人： Hiroaki Matsumura , Yasuhisa Kotani
IPC分类号： H01S5/00
CPC分类号： H01S5/16 , B82Y20/00 , H01S5/0202 , H01S5/0224 , H01S5/024 , H01S5/1017 , H01S5/2009 , H01S5/22 , H01S5/3216 , H01S5/34333 , H01S2301/18 , H01S2304/12
摘要： A semiconductor laser device having a far field pattern (FFP) with a Gaussian distribution that is less prone to ripples is provided. The semiconductor laser device comprises a semiconductor layer having a first conductivity type, an active layer, a semiconductor layer having a second conductivity type, a waveguide region formed by restricting current within a stripe-shaped region in the semiconductor layer of the second conductive type, and a resonance surface provided on an end face substantially perpendicular to the waveguide region. A plurality of recesses is formed at positions spaced from the waveguide region in the semiconductor layer of the second conductivity type in a region adjacent to the resonance surface.

3. 发明申请

US20130001512A1 NITRIDE GROUP SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING MULTIQUANTUM WELL STRUCTURE 有权
标题翻译： NITRIDE GROUP半导体发光器件，其中包括多元件结构
公开(公告)号：US20130001512A1
公开(公告)日：2013-01-03
申请号：US13583257
申请日：2011-03-03
申请人： Yasuhisa Kotani
发明人： Yasuhisa Kotani
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32 , H01S5/3407 , H01S5/34333
摘要： A nitride group semiconductor light emitting device includes a substrate, n-type and p-type semiconductor layers, and an active region. The n-type and p-type semiconductor layers are formed on or above the substrate. The active region is interposed between the n-type and p-type semiconductor layers. The active region includes barrier layers that are included in a multiquantum well structure, and an end barrier layer that has a thickness greater than the barrier layer, and is arranged closest to the p-type semiconductor layer. The average thickness of the last two barrier layers that are arranged adjacent to the end barrier layer is smaller than the average thickness of the other barrier layers among the thicknesses of the barrier layers that are included in the multiquantum well structure.
摘要翻译：氮化物半导体发光器件包括衬底，n型和p型半导体层以及有源区。在衬底上或上方形成n型和p型半导体层。有源区介于n型和p型半导体层之间。活性区域包括包含在多量子阱结构中的阻挡层和具有大于阻挡层的厚度的端部阻挡层，并且最靠近p型半导体层布置。与端阻挡层相邻布置的最后两个阻挡层的平均厚度小于包括在多量子阱结构中的阻挡层的厚度中的其它势垒层的平均厚度。

4. 发明申请

US20090267018A1 Refrigerant Composition 审中-公开
标题翻译：制冷剂组成
公开(公告)号：US20090267018A1
公开(公告)日：2009-10-29
申请号：US12094400
申请日：2006-08-16
申请人： Seijyuro Maiya , Osamu Nakagome , Hideyuki Suzuki , Yasuhisa Kotani , Toshifumi Hatanaka , Toshihiro Wada
发明人： Seijyuro Maiya , Osamu Nakagome , Hideyuki Suzuki , Yasuhisa Kotani , Toshifumi Hatanaka , Toshihiro Wada
IPC分类号： C09K5/04
CPC分类号： C09K5/041 , C09K2205/106 , C09K2205/11
摘要： ProblemsTo provide a refrigerant that is ozone-friendly, exhibiting a very low global warning potential, and that is safe and nontoxic, ensuring high performance, by mixing dimethyl ether with carbon dioxide.Means for Solving ProblemsThere is provided a refrigerant composition for a refrigerator, comprising 10-40% by mole of dimethyl ether and 90-60% by mole of carbon dioxide on the basis of a total number of moles of dimethyl ether and carbon dioxide.
摘要翻译：问题为了提供臭氧友好的制冷剂，通过将二甲醚与二氧化碳混合，可以显示出非常低的全局警告潜力，而且安全无毒，确保高性能。解决问题的方法本发明提供一种冷冻机用制冷剂组合物，其以二甲醚和二氧化碳的总摩尔数为基准，含有10〜40摩尔％的二甲醚和90〜60摩尔％的二氧化碳。

5. 发明申请

US20090045375A1 Refrigerant Composition 审中-公开
标题翻译：制冷剂组成
公开(公告)号：US20090045375A1
公开(公告)日：2009-02-19
申请号：US12067429
申请日：2006-08-16
申请人： Seijyuro Maiya , Osamu Nakagome , Hideyuki Suzuki , Yasuhisa Kotani , Toshifumi Hatanaka , Toshihiro Wada
发明人： Seijyuro Maiya , Osamu Nakagome , Hideyuki Suzuki , Yasuhisa Kotani , Toshifumi Hatanaka , Toshihiro Wada
IPC分类号： C09K5/00
CPC分类号： C09K5/041 , F25B9/006
摘要： [Problems] To provide a safe, nontoxic, and high-performance mixed refrigerant for hot water supply/heating system which is prepared by mixing dimethyl ether with carbon dioxide and which does not deplete the ozone layer, has a low global warming potential, and permits low-pressure operation.[Means for Solving Problems] A refrigerant composition for hot water supply/heating comprising 1 to 10% by mole of dimethyl ether and 99 to 90% by mole of carbon dioxide on the basis of the total number of moles of dimethyl ether and carbon dioxide.
摘要翻译： [问题]为了提供通过将二甲醚与二氧化碳混合并且不耗尽臭氧层制备的热水供应/加热系统的安全，无毒，高性能的混合制冷剂具有低的全球变暖潜能，以及允许低压操作。用于解决问题的手段根据二甲醚和二氧化碳的总摩尔数，含有1〜10摩尔％的二甲醚和99〜90摩尔％的二氧化碳的热水供给/加热用制冷剂组合物。

6. 发明授权

US09123851B2 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US09123851B2
公开(公告)日：2015-09-01
申请号：US14234842
申请日：2012-06-13
申请人： Takahiko Goda , Yasuhisa Kotani
发明人： Takahiko Goda , Yasuhisa Kotani
IPC分类号： H01L29/36 , H01L31/00 , H01L33/06 , H01L33/32 , H01S5/34 , H01S5/343 , H01S5/20
CPC分类号： H01L33/06 , H01L33/32 , H01S5/2009 , H01S5/3407 , H01S5/34333
摘要： A semiconductor light emitting element includes an n-side semiconductor layer, an active layer, and a p-side semiconductor layer stacked in this order on a substrate. The active layer includes a multiple quantum well structure which includes a plurality of barrier layers and a plurality of well layers adjacent to the barrier layers. Among the barrier layers, a final barrier layer disposed closest to the p-side semiconductor layer and one or more barrier layers adjacent to the final barrier layer via the well layers respectively has a greater thickness than a thickness of a barrier layer on a side close to the n-side semiconductor layer.
摘要翻译：半导体发光元件包括依次层叠在基板上的n侧半导体层，有源层和p侧半导体层。有源层包括多量子阱结构，其包括多个势垒层和与势垒层相邻的多个阱层。在阻挡层中，最靠近p侧半导体层设置的最终阻挡层和经由阱层与最终阻挡层相邻的一个或多个阻挡层分别具有比封闭侧上的阻挡层的厚度更大的厚度到n侧半导体层。

7. 发明申请

US20140166980A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权
标题翻译：半导体发光元件
公开(公告)号：US20140166980A1
公开(公告)日：2014-06-19
申请号：US14234842
申请日：2012-06-13
申请人： Takahiko Goda , Yasuhisa Kotani
发明人： Takahiko Goda , Yasuhisa Kotani
IPC分类号： H01L33/06 , H01L33/32
CPC分类号： H01L33/06 , H01L33/32 , H01S5/2009 , H01S5/3407 , H01S5/34333
摘要： A semiconductor light emitting element includes an n-side semiconductor layer, an active layer, and a p-side semiconductor layer stacked in this order on a substrate. The active layer includes a multiple quantum well structure which includes a plurality of barrier layers and a plurality of well layers adjacent to the barrier layers. Among the barrier layers, a final barrier layer disposed closest to the p-side semiconductor layer and one or more barrier layers adjacent to the final barrier layer via the well layers respectively has a greater thickness than a thickness of a barrier layer on a side close to the n-side semiconductor layer.
摘要翻译：半导体发光元件包括依次层叠在基板上的n侧半导体层，有源层和p侧半导体层。有源层包括多量子阱结构，其包括多个势垒层和与势垒层相邻的多个阱层。在阻挡层中，最靠近p侧半导体层设置的最终阻挡层和经由阱层与最终阻挡层相邻的一个或多个阻挡层分别具有比封闭侧上的阻挡层的厚度更大的厚度到n侧半导体层。

8. 发明申请

US20090260373A1 Refrigerant Composition 审中-公开
标题翻译：制冷剂组成
公开(公告)号：US20090260373A1
公开(公告)日：2009-10-22
申请号：US12063904
申请日：2006-08-16
申请人： Seijyuro Maiya , Osamu Nakagome , Hideyuki Suzuki , Yasuhisa Kotani , Toshifumi Hatanaka , Toshihiro Wada
发明人： Seijyuro Maiya , Osamu Nakagome , Hideyuki Suzuki , Yasuhisa Kotani , Toshifumi Hatanaka , Toshihiro Wada
IPC分类号： C09K5/04 , C09K5/00
CPC分类号： C09K5/041 , C09K2205/106 , C09K2205/11
摘要： [Problems] To provide a refrigerant which is obtained by mixing a refrigerant, dimethyl ether, and carbon dioxide and which has such excellent performances that it does not cause ozonosphere depletion, has extremely low global warming potential, and is safe and nontoxic.[Means for solving problems] The refrigerant composition for refrigerating machines contains 1-10 mol % dimethyl ether and 99-90 mol % carbon dioxide.
摘要翻译： [问题]提供通过混合制冷剂，二甲醚和二氧化碳而获得的制冷剂，其具有不会引起臭氧层消耗的优异性能，具有极低的全球变暖潜力，并且是安全无毒的。解决问题的方法冷冻机用制冷剂组合物含有1〜10摩尔％的二甲醚和99〜90摩尔％的二氧化碳。

9. 发明申请

US20070267597A1 Refrigerant Mixture of Dimethyl Ether and Carbon Dioxide 审中-公开
标题翻译：二甲醚和二氧化碳的制冷剂混合物
公开(公告)号：US20070267597A1
公开(公告)日：2007-11-22
申请号：US11569949
申请日：2005-06-01
申请人： Seijyuro Maiya , Osamu Nakagome , Hideyuki Suzuki , Yasuhisa Kotani , Toshifumi Hatanaka , Toshihiro Wada
发明人： Seijyuro Maiya , Osamu Nakagome , Hideyuki Suzuki , Yasuhisa Kotani , Toshifumi Hatanaka , Toshihiro Wada
IPC分类号： C09K5/00
CPC分类号： C09K5/041 , C09K2205/106 , C09K2205/11
摘要： Disclosed is a safe, non-toxic refrigerant mixture for heating/hot water supply obtained by mixing dimethyl ether and carbon dioxide which operates at low pressures while exhibiting excellent performance. This refrigerant mixture does not deplete the ozone layer, and has a low global warming potential. Specifically disclosed is a composition containing 10-80% by mole of dimethyl ether and 90-20% by mole of carbon dioxide based on the total mole number of dimethyl ether and carbon dioxide.
摘要翻译：公开了一种安全，无毒的制冷剂混合物，用于通过混合在低压下操作的二甲醚和二氧化碳而获得的加热/热水供应，同时表现出优异的性能。这种制冷剂混合物不会消耗臭氧层，并且具有低的全球变暖潜能。具体公开的是含有10-80摩尔％二甲醚和90-20摩尔％二氧化碳的组合物，基于二甲醚和二氧化碳的总摩尔数。

10. 发明申请

US20110017941A1 Refrigerant Composition 审中-公开
标题翻译：制冷剂组成
公开(公告)号：US20110017941A1
公开(公告)日：2011-01-27
申请号：US12878548
申请日：2010-09-09
申请人： Seijyuro Maiya , Osamu Nakagome , Hideyuki Suzuki , Yasuhisa Kotani , Toshifumi Hatanaka , Toshihiro Wada
发明人： Seijyuro Maiya , Osamu Nakagome , Hideyuki Suzuki , Yasuhisa Kotani , Toshifumi Hatanaka , Toshihiro Wada
IPC分类号： C09K5/04
CPC分类号： C09K5/041 , C09K2205/106 , C09K2205/11
摘要： The present invention is directed to using a composition comprising carbon dioxide and dimethyl ether as a refrigerant. In particular, the refrigerant composition comprises 3-6% by mole dimethyl ether and 97-94% by mole of carbon dioxide on the basis of a total number of moles of dimethyl ether and carbon dioxide. Advantageously, the refrigerant composition does not cause ozonosphere depletion, has a low global warming potential, and is safe and nontoxic.
摘要翻译：本发明涉及使用包含二氧化碳和二甲醚作为制冷剂的组合物。特别地，基于二甲醚和二氧化碳的总摩尔数，制冷剂组合物包含3-6摩尔％的二甲醚和97-94摩尔％的二氧化碳。有利地，制冷剂组合物不会引起臭氧层消耗，全球变暖潜能低，安全无毒。

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