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1. 发明申请

US20110062419A1 FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US20110062419A1
公开(公告)日：2011-03-17
申请号：US12991958
申请日：2009-05-22
申请人： Hiroaki Kikuchi , Osamu Takahashi , Katsunori Kondo , Tomoaki Yamabayashi , Kunio Ogasawara , Tadashi Ishigaki , Yutaka Hienuki , Motonori Nakamura , Agus Subagyo
发明人： Hiroaki Kikuchi , Osamu Takahashi , Katsunori Kondo , Tomoaki Yamabayashi , Kunio Ogasawara , Tadashi Ishigaki , Yutaka Hienuki , Motonori Nakamura , Agus Subagyo
IPC分类号： H01L29/06 , H01L21/336 , B82Y99/00 , B82Y40/00
CPC分类号： H01L51/0545 , B82Y10/00 , H01L51/0048
摘要： Provided is a carbon nanotube field effect transistor manufacturing method wherein carbon nanotube field effect transistors having excellent stable electric conduction property are manufactured with excellent reproducibility. After arranging carbon nanotubes to be a channel on a substrate, the carbon nanotubes are covered with an insulating protection film. Then, a source electrode and a drain electrode are formed on the insulating protection film. At this time, a contact hole is formed on the protection film, and the carbon nanotubes are connected with the source electrode and the drain electrode. Then, a wiring protection film, a conductive film and a plasma CVD film are sequentially formed on the insulating protection film, the source electrode and the drain electrode. In the field effect transistor thus manufactured, since the carbon nanotubes to be the channel are not contaminated and not damaged, excellent stable electric conductive property is exhibited.
摘要翻译：提供一种碳纳米管场效应晶体管的制造方法，其制造具有优异的稳定导电性的碳纳米管场效应晶体管，具有优异的再现性。在将碳纳米管设置在基板上的通道之后，碳纳米管被绝缘保护膜覆盖。然后，在绝缘保护膜上形成源电极和漏电极。此时，在保护膜上形成接触孔，碳纳米管与源电极和漏极连接。然后，在绝缘保护膜，源电极和漏电极上依次形成布线保护膜，导电膜和等离子体CVD膜。在这样制造的场效应晶体管中，由于作为沟道的碳纳米管不被污染而不被损坏，所以表现出优异的稳定的导电性。

2. 发明授权

US08288804B2 Field effect transistor and method for manufacturing the same 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US08288804B2
公开(公告)日：2012-10-16
申请号：US12991958
申请日：2009-05-22
申请人： Hiroaki Kikuchi , Osamu Takahashi , Katsunori Kondo , Tomoaki Yamabayashi , Kunio Ogasawara , Tadashi Ishigaki , Yutaka Hienuki , Motonori Nakamura , Agus Subagyo
发明人： Hiroaki Kikuchi , Osamu Takahashi , Katsunori Kondo , Tomoaki Yamabayashi , Kunio Ogasawara , Tadashi Ishigaki , Yutaka Hienuki , Motonori Nakamura , Agus Subagyo
IPC分类号： H01L29/72
CPC分类号： H01L51/0545 , B82Y10/00 , H01L51/0048
摘要： Provided is a carbon nanotube field effect transistor manufacturing method wherein carbon nanotube field effect transistors having excellent stable electric conduction property are manufactured with excellent reproducibility. After arranging carbon nanotubes to be a channel on a substrate, the carbon nanotubes are covered with an insulating protection film. Then, a source electrode and a drain electrode are formed on the insulating protection film. At this time, a contact hole is formed on the protection film, and the carbon nanotubes are connected with the source electrode and the drain electrode. Then, a wiring protection film, a conductive film and a plasma CVD film are sequentially formed on the insulating protection film, the source electrode and the drain electrode. In the field effect transistor thus manufactured, since the carbon nanotubes to be the channel are not contaminated and not damaged, excellent stable electric conductive property is exhibited.
摘要翻译：提供一种碳纳米管场效应晶体管的制造方法，其制造具有优异的稳定导电性的碳纳米管场效应晶体管，具有优异的再现性。在将碳纳米管设置在基板上的通道之后，碳纳米管被绝缘保护膜覆盖。然后，在绝缘保护膜上形成源电极和漏电极。此时，在保护膜上形成接触孔，碳纳米管与源电极和漏极连接。然后，在绝缘保护膜，源电极和漏电极上依次形成布线保护膜，导电膜和等离子体CVD膜。在这样制造的场效应晶体管中，由于作为沟道的碳纳米管不被污染而不被损坏，所以表现出优异的稳定的导电性。

3. 发明申请

US20130292609A1 PHOSPHOR MANUFACTURING METHOD 审中-公开
标题翻译：磷光体制造方法
公开(公告)号：US20130292609A1
公开(公告)日：2013-11-07
申请号：US13991000
申请日：2011-12-02
申请人： Kenji Toda , Kazuyoshi Uematsu , Mineo Sato , Tadashi Ishigaki , Yoshitaka Kawakami , Tetsu Umeda
发明人： Kenji Toda , Kazuyoshi Uematsu , Mineo Sato , Tadashi Ishigaki , Yoshitaka Kawakami , Tetsu Umeda
IPC分类号： C09K11/59
CPC分类号： C09K11/59 , C09K11/7734 , C09K11/7741 , C09K11/7769 , C09K11/7787 , C09K11/7789 , C09K11/7794 , H01L33/502
摘要： A method for producing a silicate-based oxynitride phosphor, comprising a step of firing a raw material mixture while contacting the raw material mixture with a Si-containing gas containing gas phase Si to generate a silicate-based oxynitride phosphor.
摘要翻译：一种硅酸盐系氮氧化物荧光体的制造方法，其特征在于，在将原料混合物与含有Si的含有气体Si的含有气体接触的同时烧成原料混合物，生成硅酸盐系氮氧化物荧光体的工序。

4. 发明申请

US20130292733A1 CRYSTALLINE MATERIAL, AND LIGHT-EMITTING DEVICE AND WHITE LED USING SAME 审中-公开
标题翻译：晶体材料，发光装置和使用相同的白色LED
公开(公告)号：US20130292733A1
公开(公告)日：2013-11-07
申请号：US13990839
申请日：2011-12-02
申请人： Kenji Toda , Kazuyoshi Uematsu , Mineo Sato , Tadashi Ishigaki , Yoshitaka Kawakami , Tetsu Umeda
发明人： Kenji Toda , Kazuyoshi Uematsu , Mineo Sato , Tadashi Ishigaki , Yoshitaka Kawakami , Tetsu Umeda
IPC分类号： H01L33/50
CPC分类号： H01L33/502 , C01B21/0821 , C01B21/0823 , C01P2002/50 , C01P2002/52 , C01P2002/84 , C09K11/0883 , C09K11/7734
摘要： A crystalline material represented by M12a(M2bLc)M3dOyNx wherein M1 is at least one element selected from alkali metals, M2 is at least one element selected from Ca, Sr, and Ba, M3 is at least one element selected from Si and Ge, L is at least one element selected from rare earth elements, Bi, and Mn, a is 0.9 to 1.5, b is 0.8 to 1.2, c is 0.005 to 0.2, d is 0.8 to 1.2, x is 0.001 to 1.0, and y is 3.0 to 4.0 or less.
摘要翻译：由M12a（M2bLc）M3dOyNx表示的结晶材料，其中M1为选自碱金属的至少一种元素，M2为选自Ca，Sr和Ba中的至少一种元素，M3为选自Si和Ge中的至少一种元素，L 是选自稀土元素Bi和Mn中的至少一种元素，a为0.9〜1.5，b为0.8〜1.2，c为0.005〜0.2，d为0.8〜1.2，x为0.001〜1.0，y为3.0 至4.0以下。

5. 发明申请

US20130026414A1 SILICATE-BASED PHOSPHOR AND MANUFACTURING METHOD OF SILICATE-BASED PHOSPHOR 有权
标题翻译：基于硅酸盐的磷光体和基于硅酸盐的磷的制造方法
公开(公告)号：US20130026414A1
公开(公告)日：2013-01-31
申请号：US13640412
申请日：2011-04-12
申请人： Kenji Toda , Mineo Sato , Kazuyoshi Uematsu , Tadashi Ishigaki , Hideo Suda , Etsuko Minegishi , Yoshiaki Kudo
发明人： Kenji Toda , Mineo Sato , Kazuyoshi Uematsu , Tadashi Ishigaki , Hideo Suda , Etsuko Minegishi , Yoshiaki Kudo
IPC分类号： C09K11/79
CPC分类号： C09K11/7734
摘要： There are provide a silicate-based phosphor excellent in emission intensity and a manufacturing method of the same. A manufacturing method of a silicate-based phosphor is characterized by: introducing in a vessel raw material powders having a compound containing light-emitting ions selected from at least one of Eu, Ce, Mn, and Tb; and firing the raw material powders while supplying SiOx (0.5≦x≦1.9, preferably, 0.8≦x≦1.2) in a gas phase. The raw material powders preferably further contains at least one of an alkali metal compound, an alkaline-earth metal compound, a magnesium compound, and a rare-earth compound. The silicate-based phosphor is preferably M2SiO4:Eu2+ (wherein M is one or more selected from a group consisting of Ca, Sr and Ba). The firing is preferably performed by supplying the SiOx to the raw material powders in a gas atmosphere at a temperature of 1200 to 1700° C. and subjecting the raw material powders to a gas-solid phase reaction at a temperature of 700 to 1700° C.
摘要翻译：提供了发光强度优异的硅酸盐系荧光体及其制造方法。硅酸盐系荧光体的制造方法的特征在于，在容器内导入具有选自Eu，Ce，Mn，Tb中的至少一种的发光离子的化合物的原料粉末; 并在气相中供给SiOx（0.5＆amp; NlE; x＆nlE; 1.9，优选0.8和nlE; x＆nlE; 1.2）的同时焙烧原料粉末。原料粉末优选还含有碱金属化合物，碱土金属化合物，镁化合物和稀土类化合物中的至少一种。硅酸盐系荧光体优选为M2SiO4：Eu2 +（其中M为选自Ca，Sr和Ba中的一种或多种）。焙烧优选通过在气氛气氛中在1200〜1700℃的温度下向原料粉末供给SiO x，并在700〜1700℃的温度下对原料粉末进行气 - 固相反应。

6. 发明授权

US08816377B2 Phosphor and light emitting device 有权
标题翻译：荧光粉和发光装置
公开(公告)号：US08816377B2
公开(公告)日：2014-08-26
申请号：US13818766
申请日：2011-11-28
申请人： Kenji Toda , Tadashi Ishigaki
发明人： Kenji Toda , Tadashi Ishigaki
IPC分类号： H01L33/00 , C09K11/77 , H05B33/14 , H01L33/50
CPC分类号： C09K11/7701 , C09K11/7792 , C09K11/7793 , H01L33/502 , H01L33/507 , H01L2224/45144 , H01L2224/48091 , H05B33/14 , H01L2924/00014 , H01L2924/00
摘要： The present invention provides a phosphor emitting green fluorescence when being effectively excited by excitation light in a wavelength range from blue light to near-ultraviolet light, having an emission intensity that does not vary significantly with variation in the wavelength of the excitation light, and being manufactured easily. The phosphor includes a chemical structure represented by the following general formula (A): A(M1-a-xEuaMnx)L(Si1-bGeb)2O7, (A), where A is one or more elements selected from Li, Na, and K, M is one or more elements selected from Mg, Ca, Sr, Ba, and Zn, L is one or more elements selected from Ga, Al, Sc, Y, La, Gd, and Lu, a is a numerical value satisfying 0.001≦a≦0.3, b is a numerical value satisfying 0≦b≦0.5, and x is a numerical value satisfying 0≦x≦0.2.
摘要翻译：本发明提供一种发射绿色荧光的荧光体，其在由蓝光到近紫外光的波长范围内的激发光有效地激发，其发射强度随着激发光的波长的变化而不显着变化，并且是制造容易。荧光体包括由以下通式（A）表示的化学结构：A（M1-a-xEuaMnx）L（Si1-bGeb）2O7，（A）其中A是选自Li，Na和 K，M是选自Mg，Ca，Sr，Ba和Zn中的一种或多种元素，L是选自Ga，Al，Sc，Y，La，Gd和Lu中的一种或多种元素，a是满足 0.001＆nlE; a＆nlE; 0.3 b是满足0＆nlE; b＆nlE; 0.5的数值，x是满足0＆nlE; x＆nlE; 0.2的数值。

7. 发明授权

US08734680B2 Silicate-based phosphor and manufacturing method of silicate-based phosphor 有权
标题翻译：硅酸盐系磷光体及其制造方法
公开(公告)号：US08734680B2
公开(公告)日：2014-05-27
申请号：US13640412
申请日：2011-04-12
申请人： Kenji Toda , Mineo Sato , Kazuyoshi Uematsu , Tadashi Ishigaki , Hideo Suda , Etsuko Minegishi , Yoshiaki Kudo
发明人： Kenji Toda , Mineo Sato , Kazuyoshi Uematsu , Tadashi Ishigaki , Hideo Suda , Etsuko Minegishi , Yoshiaki Kudo
IPC分类号： C01B33/24 , C09K11/08 , C09K11/66
CPC分类号： C09K11/7734
摘要： There are provide a silicate-based phosphor excellent in emission intensity and a manufacturing method of the same. A manufacturing method of a silicate-based phosphor is characterized by: introducing in a vessel raw material powders having a compound containing light-emitting ions selected from at least one of Eu, Ce, Mn, and Tb; and firing the raw material powders while supplying SiOx (0.5≦x≦1.9, preferably, 0.8≦x≦1.2) in a gas phase. The raw material powders preferably further contains at least one of an alkali metal compound, an alkaline-earth metal compound, a magnesium compound, and a rare-earth compound. The silicate-based phosphor is preferably M2SiO4:Eu2+ (wherein M is one or more selected from a group consisting of Ca, Sr and Ba). The firing is preferably performed by supplying the SiOx to the raw material powders in a gas atmosphere at a temperature of 1200 to 1700° C. and subjecting the raw material powders to a gas-solid phase reaction at a temperature of 700 to 1700° C.
摘要翻译：提供了发光强度优异的硅酸盐系荧光体及其制造方法。硅酸盐系荧光体的制造方法的特征在于，在容器内导入具有选自Eu，Ce，Mn，Tb中的至少一种的发光离子的化合物的原料粉末; 并在气相中供给SiOx（0.5＆amp; NlE; x＆nlE; 1.9，优选0.8和nlE; x＆nlE; 1.2）的同时焙烧原料粉末。原料粉末优选还含有碱金属化合物，碱土金属化合物，镁化合物和稀土类化合物中的至少一种。硅酸盐系荧光体优选为M2SiO4：Eu2 +（其中M为选自Ca，Sr和Ba中的一种或多种）。焙烧优选通过在气氛气氛中在1200〜1700℃的温度下向原料粉末供给SiO x，并在700〜1700℃的温度下对原料粉末进行气 - 固相反应。

8. 发明申请

US20130146930A1 PHOSPHOR AND LIGHT EMITTING DEVICE 有权
标题翻译：磷光和发光装置
公开(公告)号：US20130146930A1
公开(公告)日：2013-06-13
申请号：US13818766
申请日：2011-11-28
申请人： Kenji Toda , Tadashi Ishigaki
发明人： Kenji Toda , Tadashi Ishigaki
IPC分类号： C09K11/77 , H01L33/50
CPC分类号： C09K11/7701 , C09K11/7792 , C09K11/7793 , H01L33/502 , H01L33/507 , H01L2224/45144 , H01L2224/48091 , H05B33/14 , H01L2924/00014 , H01L2924/00
摘要： The present invention provides a phosphor emitting green fluorescence when being effectively excited by excitation light in a wavelength range from blue light to near-ultraviolet light, having an emission intensity that does not vary significantly with variation in the wavelength of the excitation light, and being manufactured easily. The phosphor includes a chemical structure represented by the following general formula (A): A(M1-a-xEuaMnx)L(Si1-bGeb)2O7 , (A), where A is one or more elements selected from Li, Na, and K, M is one or more elements selected from Mg, Ca, Sr, Ba, and Zn, L is one or more elements selected from Ga, Al, Sc, Y, La, Gd, and Lu, a is a numerical value satisfying 0.001≦a≦0.3, b is a numerical value satisfying 0≦b≦0.5, and x is a numerical value satisfying 0≦x≦0.2.
摘要翻译：本发明提供一种发射绿色荧光的荧光体，其在由蓝光到近紫外光的波长范围内的激发光有效地激发，其发射强度随着激发光的波长的变化而不显着变化，并且是制造容易。荧光体包括由以下通式（A）表示的化学结构：A（M1-a-xEuaMnx）L（Si1-bGeb）2O7，（A）其中A是选自Li，Na和 K，M是选自Mg，Ca，Sr，Ba和Zn中的一种或多种元素，L是选自Ga，Al，Sc，Y，La，Gd和Lu中的一种或多种元素，a是满足 0.001 @ a @ 0.3，b是满足0 @ b @ 0.5的数值，x是满足0 @ x @ 0.2的数值。

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