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1. 发明申请

US20060152600A1 Mobile telephone device 审中-公开
标题翻译：移动电话设备
公开(公告)号：US20060152600A1
公开(公告)日：2006-07-13
申请号：US10519477
申请日：2004-03-23
申请人： Hiroaki Hamada , Masatake Nakano
发明人： Hiroaki Hamada , Masatake Nakano
IPC分类号： H04N5/76
CPC分类号： H04N5/772 , H04M1/0214 , H04M1/72555 , H04N1/2137
摘要： A mobile phone generates respective thumbnail image data of a plurality of original image data obtained by a user in an image pickup unit with a continuous photographing form, and temporarily stores in a first memory together with the original image data. The mobile phone then displays an overview of the thumbnail image data on a display unit and, immediately thereafter, can continuously display the plurality of original image data on the display unit. The user can determine whether to store the data or not corresponding to a state of playback thereof. When the user directs to store the original image data, the original image data is permanently stored in a second memory.
摘要翻译：移动电话产生由用户在具有连续拍摄形式的图像拾取单元中获得的多个原始图像数据的各自的缩略图数据，并且与原始图像数据一起临时存储在第一存储器中。然后，移动电话在显示单元上显示缩略图数据的概况，并且此后可以在显示单元上连续显示多个原始图像数据。用户可以根据其回放的状态确定是否存储数据。当用户指示存储原始图像数据时，原始图像数据被永久存储在第二存储器中。

2. 发明授权

US07186628B2 Method of manufacturing an SOI wafer where COP's are eliminated within the base wafer 有权
标题翻译：在基底晶片内去除了COP的SOI晶片的制造方法
公开(公告)号：US07186628B2
公开(公告)日：2007-03-06
申请号：US10500381
申请日：2003-01-07
申请人： Masatake Nakano
发明人： Masatake Nakano
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L21/3225 , H01L21/3226
摘要： When an SOI wafer is produced by using a bond wafer made of silicon single crystal to form an SOI layer and a base wafer made of silicon single crystal to be a support substrate, one silicon wafer selected from a group consisting of an epitaxial wafer, an FZ wafer, a nitrogen doped wafer, a hydrogen annealed wafer, an intrinsic gettering wafer, a nitrogen doped and annealed wafer, and an entire N-region wafer is used as the bond wafer. Thereby, even where a thin insulator film or a thin SOI layer is formed in the SOI wafer, COPs are hardly detected in inspection of the SOI layer after the SOI wafer was completed, and a high quality SOI wafer is provided.
摘要翻译：当通过使用由硅单晶制成的接合晶片以形成SOI层和由硅单晶制成的基底晶片作为支撑衬底来制造SOI晶片时，选自由外延晶片， FZ晶片，氮掺杂晶片，氢退火晶片，固有吸杂晶片，氮掺杂和退火晶片以及整个N区晶片用作接合晶片。由此，即使在SOI晶片中形成薄的绝缘膜或薄的SOI层的情况下，在SOI晶片的SOI晶片完成后的检查中几乎不检测到COP，也提供了高质量的SOI晶片。

3. 发明授权

US06900113B2 Method for producing bonded wafer and bonded wafer 有权
标题翻译：制造接合晶片和接合晶片的方法
公开(公告)号：US06900113B2
公开(公告)日：2005-05-31
申请号：US10296900
申请日：2001-05-29
申请人： Masatake Nakano , Isao Yokokawa , Kiyoshi Mitani
发明人： Masatake Nakano , Isao Yokokawa , Kiyoshi Mitani
IPC分类号： H01L21/30 , H01L21/46 , H01L21/762 , H01L27/12
CPC分类号： H01L21/76254 , Y10S438/974 , Y10S438/977
摘要： The present invention provides a method for producing a bonded wafer comprising at least an ion implantation process where at least either hydrogen ions or rare gas ions are implanted into a first wafer from its surface to form a micro bubble layer (implanted layer) in the first wafer, a bonding process where the surface subjected to the ion implantation of the first wafer is bonded to a surface of a second wafer, and a delamination process where the first wafer is delaminated at the micro bubble layer, wherein the ion implantation process is performed in divided multiple steps, and a bonded wafer. Thus, there are provided a method for producing a bonded wafer, which is for reducing micro-voids generated in the ion implantation and delamination method and a bonded wafer free from micro-voids.
摘要翻译：本发明提供了一种制造接合晶片的方法，其至少包括离子注入工艺，其中至少一种氢离子或稀有气体离子从其表面注入到第一晶片中，以在第一晶片中形成微气泡层（注入层）晶片，其中经受第一晶片的离子注入的表面被接合到第二晶片的表面的接合工艺以及第一晶片在微气泡层处分层的分层过程，其中执行离子注入工艺分割多个步骤，以及粘合晶片。因此，提供了一种制造用于减少在离子注入和分层方法中产生的微孔的接合晶片的方法和没有微孔的接合晶片。

4. 发明授权

US6004866A Method for manufacturing bonded wafer and bonded wafer manufactured thereby 失效
标题翻译：用于制造由此制造的接合晶片和接合晶片的方法
公开(公告)号：US6004866A
公开(公告)日：1999-12-21
申请号：US808655
申请日：1997-02-28
申请人： Masatake Nakano , Kiyoshi Mitani , Masahiro Sakai
发明人： Masatake Nakano , Kiyoshi Mitani , Masahiro Sakai
IPC分类号： H01L21/302 , H01L21/02 , H01L21/20 , H01L21/304 , H01L21/3065 , H01L27/12 , H01L21/30 , H01L21/46 , H01L21/461
CPC分类号： H01L21/2007
摘要： A method for manufacturing a bonded wafer comprises the steps of; mirror-polishing a surface of first and second substrates, bringing the mirror-polished surfaces of the substrates contact with each other to join them, and subjecting the substrates to a heat treatment to firmly bond them. One of the surfaces of the first and second substrates prior to bonding, or one surface of the bonded wafer is subjected to a polishing treatment for exerting little influence by irregularities on a rear surface of the one substrate or by a figure of a surface of a polishing plate which is in contact with the rear surface of the one substrate.
摘要翻译：一种接合晶片的制造方法，包括以下步骤：对第一基板和第二基板的表面进行镜面抛光，使基板的镜面抛光表面相互接触，使基板经受热处理以使其牢固地结合。在接合之前的第一和第二基板的表面之一或接合的晶片的一个表面经受抛光处理，以在一个基板的后表面上或由一个基板的表面的图形施加不规则的影响抛光板，其与一个基板的后表面接触。

5. 发明授权

US06797632B1 Bonded wafer producing method and bonded wafer 有权
标题翻译：粘结晶片生产方法和接合晶片
公开(公告)号：US06797632B1
公开(公告)日：2004-09-28
申请号：US09857569
申请日：2001-06-07
申请人： Masatake Nakano , Kiyoshi Mitani , Shinichi Tomizawa
发明人： Masatake Nakano , Kiyoshi Mitani , Shinichi Tomizawa
IPC分类号： H01I21302
CPC分类号： H01L21/76254
摘要： In a method for producing a bonding wafer by the hydrogen ion delamination method comprising at least a step of bonding a base wafer and a bond wafer having a micro bubble layer formed by gas ion implantation and a step of delaminating them at the micro bubble layer as a border, a peripheral portion of a thin film formed on the base wafer is removed after the delamination step. Preferably, a region of 1-5 mm from the peripheral end of the base wafer is removed. In the production of a bonding wafer by the hydrogen ion delamination method, there can be provided a bonding wafer free from problems such as generation of particles from peripheral portion of the wafer and generation of cracks in the SOI layer.
摘要翻译：在通过氢离子分层方法制造接合晶片的方法中，至少包括将基底晶片和具有通过气体离子注入形成的微气泡层的接合晶片和在微气泡层分层的步骤，在分层步骤之后，除去在基底晶片上形成的薄膜的周边部分的边界。优选地，从基底晶片的外周端开始1-5mm的区域。在通过氢离子分层方法制造接合晶片的过程中，可以提供没有晶片周边部分产生颗粒的问题的接合晶片和SOI层中的裂纹的产生。

6. 发明授权

US08466538B2 SOI wafer, semiconductor device, and method for manufacturing SOI wafer 有权
标题翻译： SOI晶片，半导体器件和SOI晶片的制造方法
公开(公告)号：US08466538B2
公开(公告)日：2013-06-18
申请号：US12867922
申请日：2009-02-19
申请人： Tohru Ishizuka , Nobuhiko Noto , Norihiro Kobayashi , Masatake Nakano
发明人： Tohru Ishizuka , Nobuhiko Noto , Norihiro Kobayashi , Masatake Nakano
IPC分类号： H01L29/04
CPC分类号： H01L21/76254 , H01L29/045 , H01L29/78603
摘要： The present invention is an SOI wafer comprising at least: an SOI layer; a silicon oxide film; and a base wafer, wherein the SOI layer has a plane orientation of (100), and the base wafer has a resistivity of 100 Ω·cm or more and a plane orientation different from (100). As a result, there is provided the SOI wafer and the manufacturing method thereof that have no complicated manufacturing step, defects on a bonding interface which are not practically a problem in number and a high interface state density (Dit) for trapping carriers on an interface of a BOX layer and the base wafer.
摘要翻译：本发明是至少包括SOI层的SOI晶片; 氧化硅膜; 和基底晶片，其中所述SOI层具有（100）的平面取向，并且所述基底晶片的电阻率为100Ω·cm以上且平面取向不同于（100）。结果，提供了没有复杂的制造步骤的SOI晶片及其制造方法，接合界面上的缺陷在数量上几乎不成问题，并且用于在接口上捕获载体的高界面态密度（Dit）的BOX层和基底晶片。

7. 发明授权

US07531425B2 Method of fabricating bonded wafer 有权
标题翻译：制造接合晶片的方法
公开(公告)号：US07531425B2
公开(公告)日：2009-05-12
申请号：US10495102
申请日：2002-11-19
申请人： Masatake Nakano , Shinichi Tomizawa , Kiyoshi Mitani
发明人： Masatake Nakano , Shinichi Tomizawa , Kiyoshi Mitani
IPC分类号： H01L21/30
CPC分类号： H01L21/30608 , H01L21/02052 , H01L21/304 , H01L21/76254
摘要： This invention relates to a method of fabricating a bonded wafer 39 in which a bond wafer 31 and a base wafer 32, both of which are composed of silicon single crystal, are bonded while placing an oxide film 33 in between, and the bond wafer 31 is thinned. Use of modified chemically-etched wafers as both of the bond wafer 31 and base wafer 32 is successful in reducing an unbonded area UA therebetween after annealing for bonding, where the modified chemically-etched wafer refers to a wafer which is etched by alkali etching and succeeding acid etching, while setting etching amount larger in the alkali etching than in the acid etching.
摘要翻译：本发明涉及一种制造接合晶片39的方法，其中将两个由硅单晶组成的接合晶片31和基底晶片32在其间放置氧化膜33的同时被接合，并且接合晶片31 变薄了使用改性的化学蚀刻晶片作为接合晶片31和基底晶片32两者成功地在退火后还原其中的未结合区域UA，其中修改的化学蚀刻晶片是指通过碱蚀刻蚀刻的晶片，同时在碱蚀刻中设置蚀刻量比在酸蚀刻中更大。

8. 发明授权

US5376215A Apparatus for production of extremely thin SOI film substrate 失效
标题翻译：用于生产极薄SOI薄膜基片的设备
公开(公告)号：US5376215A
公开(公告)日：1994-12-27
申请号：US151209
申请日：1993-11-12
申请人： Yutaka Ohta , Masatake Nakano , Masatake Katayama , Takao Abe
发明人： Yutaka Ohta , Masatake Nakano , Masatake Katayama , Takao Abe
IPC分类号： H01L21/302 , G01B11/06 , H01L21/3065 , H01L21/66 , H01L21/762 , H01L27/12 , B44C1/22 , C03C15/00 , H01L21/306
CPC分类号： H01L21/76251 , G01B11/0683 , H01L21/3065 , H01L22/12 , H01L22/20
摘要： A method and apparatus for uniformizing a bonded SOI (silicon on insulator) thin film layer by the reaction of chemical vapor-phase corrosion excited by the ultraviolet light, which effect the measurement of film thickness efficiently and conveniently and consequently attaining highly accurate control of the dispersion of thickness of the thin film layer without requiring the substrate to be removed from the reaction vessel for chemical vapor-phase corrosion on each occasion of the measurement or necessitating installation of a mechanism for alteration of the position of measurement inside or outside the reaction vessel are disclosed. The measurement of film thickness is carried out by keeping observation of interference fringes due to distribution of thickness of the film layer.
摘要翻译：通过由紫外光激发的化学气相腐蚀的反应使接合的SOI（绝缘体上硅）层均匀化的方法和装置，其有效和方便地实现膜厚度的测量，从而实现对在每次测量时，不需要从用于化学气相腐蚀的反应容器中除去衬底的薄膜层的厚度分散，或者需要安装用于改变反应容器内部或外部的测量位置的机构被披露。通过保持观察由于膜层的厚度分布引起的干涉条纹来进行膜厚度的测量。

9. 发明授权

US5240883A Method of fabricating SOI substrate with uniform thin silicon film 失效
标题翻译：用均匀的薄膜制造SOI衬底的方法
公开(公告)号：US5240883A
公开(公告)日：1993-08-31
申请号：US841166
申请日：1992-02-25
申请人： Takao Abe , Masatake Katayama , Akio Kanai , Konomu Ohki , Masatake Nakano
发明人： Takao Abe , Masatake Katayama , Akio Kanai , Konomu Ohki , Masatake Nakano
IPC分类号： H01L21/02 , H01L21/20 , H01L21/304 , H01L21/3063 , H01L21/762 , H01L27/12
CPC分类号： H01L21/2007 , H01L21/3063 , H01L21/76251 , Y10S148/127 , Y10S148/135 , Y10S438/924
摘要： A thin Silicon film On Insulator (SOI) material fabricating method which is capable of providing a very high thickness uniformity of the silicon film, a process simplification and a considerable reduction of processing cost is disclosed, in which a silicon oxide film is formed on one or both of a p-type silicon bond wafer and a silicon base wafer, then the two wafers are bonded together through the silicon oxide film, subsequently a fixed positive charge is induced in the silicon oxide film to form a n-type inversion layer in the p-type silicon bond wafer adjacent to an interface between the p-type silicon bond wafer and the silicon oxide film layer, and thereafter a chemical etching is effected while applying a positive voltage to the p-type silicon bond wafer so that an etch-stop is made at an interface between a depletion layer including the n-type inversion layer and the p-type layer.

10. 发明申请

US20050032331A1 Soi wafer manufacturing method and soi wafer 有权
标题翻译： Soi晶圆制造方法和soi晶圆
公开(公告)号：US20050032331A1
公开(公告)日：2005-02-10
申请号：US10500381
申请日：2003-01-07
申请人： Masatake Nakano
发明人： Masatake Nakano
IPC分类号： H01L21/322 , H01L21/02 , H01L21/762 , H01L27/12 , H01L21/84
CPC分类号： H01L21/76254 , H01L21/3225 , H01L21/3226
摘要： When an SOI wafer is produced by using a bond wafer made of silicon single crystal to form an SOI layer and a base wafer made of silicon single crystal to be a support substrate, one silicon wafer selected from a group consisting of an epitaxial wafer, an FZ wafer, a nitrogen doped wafer, a hydrogen annealed wafer, an intrinsic gettering wafer, a nitrogen doped and annealed wafer, and an entire N-region wafer is used as the bond wafer. Thereby, even where a thin insulator film or a thin SOI layer is formed in the SOI wafer, COPs are hardly detected in inspection of the SOI layer after the SOI wafer was completed, and a high quality SOI wafer is provided.
摘要翻译：当通过使用由硅单晶制成的接合晶片以形成SOI层和由硅单晶制成的基底晶片作为支撑衬底来制造SOI晶片时，选自由外延晶片， FZ晶片，氮掺杂晶片，氢退火晶片，固有吸杂晶片，氮掺杂和退火晶片以及整个N区晶片用作接合晶片。由此，即使在SOI晶片中形成薄的绝缘膜或薄的SOI层的情况下，在SOI晶片的SOI晶片完成后的检查中几乎不检测到COP，也提供了高质量的SOI晶片。

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