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1. 发明授权

US5880069A Process of making high T.sub.c Josephson junction device 失效
标题翻译：制造高Tc约瑟夫逊结装置的工艺
公开(公告)号：US5880069A
公开(公告)日：1999-03-09
申请号：US190211
申请日：1994-02-01
申请人： Masao Nakao , Hiroaki Furukawa , Ryohkan Yuasa , Shuji Fujiwara
发明人： Masao Nakao , Hiroaki Furukawa , Ryohkan Yuasa , Shuji Fujiwara
IPC分类号： C23C14/08 , C30B23/02 , H01L39/24
CPC分类号： H01L39/2496 , C23C14/087 , C30B23/02 , C30B29/22 , C30B29/225 , Y10S505/702
摘要： A desired pattern is formed on a non-superconducting oxide film after the non-superconducting oxide film has been formed on a magnesia substrate. A superconducting oxide film is formed over the exposed parts of the substrate and the non-superconducting oxide film. The epitaxial orientation of the superconducting oxide film section on the non-superconducting oxide film is different from that of the superconducting oxide film section on the substrate. A tilt-boundary junction is produced at a boundary between the superconducting film sections which are different in epitaxial orientation from each other. Thus, a Josephson junction having a desired pattern can be obtained.
摘要翻译：在非超导氧化膜已经形成在氧化镁基板上之后，在非超导氧化物膜上形成期望的图案。在衬底和非超导氧化物膜的暴露部分上形成超导氧化物膜。非超导氧化物膜上的超导氧化膜部分的外延取向与衬底上的超导氧化膜部分的外延取向不同。在外延取向不同的超导膜部之间的边界处产生倾斜边界连接。因此，可以获得具有期望图案的约瑟夫逊结。

2. 发明授权

US5227363A Molecular beam epitaxy process of making superconducting oxide thin films using an oxygen radical beam 失效
标题翻译：使用氧自由基束制造超导氧化物薄膜的分子束外延工艺
公开(公告)号：US5227363A
公开(公告)日：1993-07-13
申请号：US838525
申请日：1992-02-19
申请人： Hiroaki Furukawa , Masao Nakao
发明人： Hiroaki Furukawa , Masao Nakao
IPC分类号： C30B29/22 , C30B23/02 , H01B12/06 , H01B13/00 , H01L39/12 , H01L39/24
CPC分类号： H01L39/2432 , C30B23/02 , C30B29/22 , C30B29/225 , H01L39/128 , Y10S505/73
摘要： A method makes a superconducting oxide thin film by irradiating an oxygen radical beam with necessary elements of the compound onto a substrate mounted in a molecular beam epitaxy system. The process can selectively form the superconducting oxide thin film on the substrate more efficiently in a direct reaction manner while maintaining the vacuum chamber of the molecular beam epitaxy system at a higher vacuum level.
摘要翻译：一种方法通过将氧自由基束与该化合物的必需元素一起照射到安装在分子束外延系统中的基板上来制造超导氧化物薄膜。该方法可以以更直接的反应方式更有效地在衬底上形成超导氧化物薄膜，同时将分子束外延系统的真空室保持在更高的真空度。

3. 发明授权

US5873985A Process of making squid device having tilt-boundary junction 失效
标题翻译：制造具有倾斜边界结的鱿鱼装置的过程
公开(公告)号：US5873985A
公开(公告)日：1999-02-23
申请号：US36148
申请日：1993-03-24
申请人： Seiichi Tokunaga , Ryokan Yuasa , Shuji Fujiwara , Masao Nakao , Hiroaki Furukawa
发明人： Seiichi Tokunaga , Ryokan Yuasa , Shuji Fujiwara , Masao Nakao , Hiroaki Furukawa
IPC分类号： C23C14/00 , C23C14/08 , C30B23/02 , H01L39/24 , C23C14/34
CPC分类号： H01L39/2496 , C23C14/0026 , C23C14/087 , C30B23/02 , C30B29/22 , C30B29/225 , Y10S505/702
摘要： An oxide film having a desired pattern is first formed on a magnesia substrate. A superconducting oxide film is then formed on the exposed portion of the magnesia substrate and also on the oxide film. Thus, a tilt-boundary junction is formed in the boundary between the superconducting oxide film portion on the magnesia substrate and the superconducting oxide film portion on the oxide film. The tilt-boundary junction functions as a Josephson junction. By utilizing the Josephson junction in the tilt-boundary junction, a SQUID pattern can be formed on the magnesia substrate to provide a SQUID device.
摘要翻译：首先在氧化镁基板上形成具有所需图案的氧化膜。然后在氧化镁基板的暴露部分上以及氧化物膜上形成超导氧化物膜。因此，在氧化镁基板上的超导氧化物膜部分和氧化膜上的超导氧化物膜部分之间的边界中形成倾斜边界结。倾斜边界连接起约瑟夫逊结的作用。通过在倾斜边界结中利用约瑟夫逊结，可以在氧化镁衬底上形成SQUID图案以提供SQUID器件。

4. 发明授权

US5356870A Method for processing superconducting thin films 失效
标题翻译：超导薄膜的加工方法
公开(公告)号：US5356870A
公开(公告)日：1994-10-18
申请号：US33898
申请日：1993-03-19
申请人： Shuji Fujiwara , Ryokan Yuasa , Hiroaki Furukawa , Masaaki Nemoto , Masao Nakao
发明人： Shuji Fujiwara , Ryokan Yuasa , Hiroaki Furukawa , Masaaki Nemoto , Masao Nakao
IPC分类号： C04B41/53 , C04B41/91 , C23C14/08 , C23C14/58 , H01L39/24 , B05D5/00
CPC分类号： C23C14/087 , C04B41/009 , C04B41/5353 , C04B41/91 , C23C14/58 , C23C14/5833 , C23C14/5846 , C23C14/5873 , H01L39/2464 , H01L39/2496 , Y10S505/728
摘要： An ion beam is irradiated to an oxide superconducting thin film formed on a substrate to disturb the crystal structure of the superconducting thin film and thus forming a damaged layer. The damaged layer has higher solubility in a halogen solution has a faster etching rate than other portions. Then, the superconducting thin film is etched by using a halogen solution to remove the damaged layer and form a groove at that portion. As a result, a groove of a desired form can be provided efficiently.
摘要翻译：将离子束照射到形成在基板上的氧化物超导薄膜，以扰乱超导薄膜的晶体结构，从而形成损伤层。损伤层在卤素溶液中具有较高的溶解度，其蚀刻速率比其它部分更快。然后，通过使用卤素溶液来蚀刻超导薄膜以去除损伤层并在该部分形成凹槽。结果，可以有效地提供所需形式的凹槽。

5. 发明授权

US09187640B2 Polyphenylene ether-based resin composition and method for producing the same 有权
标题翻译：聚苯醚系树脂组合物及其制造方法
公开(公告)号：US09187640B2
公开(公告)日：2015-11-17
申请号：US14127775
申请日：2012-06-20
申请人： Hiroaki Furukawa , Tadayuki Ishii
发明人： Hiroaki Furukawa , Tadayuki Ishii
IPC分类号： C08L71/12 , C08K5/521 , C08L25/02 , C08L53/02 , C08L71/10 , C08K5/523
CPC分类号： C08L71/10 , C08K5/523 , C08L53/02 , C08L71/12
摘要： To provide a resin composition that has a high impact resistance, hardly causes peeling during molding, and is excellent in flame retardancy, heat resistance, and heat aging resistance for a long period. A resin composition containing (A) polyphenylene ether, (B) a hydrogenated block copolymer that is obtained by hydrogenating a block copolymer including a polystyrene block and a conjugated diene compound polymer block, and that has a weight average molecular weight of 100,000 to 500,000, and (C) an organic phosphorus-based flame retardant within a specified amount, wherein a value of the loss tangent (tan δ) peak height of the (B) component in a dynamic viscoelasticity spectrum obtained by measurement of the resin composition at a frequency of 10 Hz is in a specified range.
摘要翻译：为了提供耐冲击性高的树脂组合物，在成型时几乎不发生剥离，并且长时间地具有优异的阻燃性，耐热性和耐热老化性。一种含有（A）聚苯醚的树脂组合物，（B）氢化嵌段共聚物，其通过氢化包含聚苯乙烯嵌段和共轭二烯化合物聚合物嵌段的嵌段共聚物而得到，重均分子量为100,000〜500,000，和（C）规定量的有机磷系阻燃剂，其中通过以一定频率测量树脂组合物而获得的动态粘弹性谱中（B）成分的损耗角正切（tanδ）峰值的值 10 Hz在指定范围内。

6. 发明申请

US20090146506A1 TWO-HAND SWITCH DEVICE 有权
标题翻译：两手开关装置
公开(公告)号：US20090146506A1
公开(公告)日：2009-06-11
申请号：US11817306
申请日：2006-07-12
申请人： Tatsuya Iida , Manabu Shutto , Hiroaki Furukawa , Toshiki Koshi , Takashi Tanaka
发明人： Tatsuya Iida , Manabu Shutto , Hiroaki Furukawa , Toshiki Koshi , Takashi Tanaka
IPC分类号： F16P3/20 , G08B1/00
CPC分类号： B30B15/285 , F16P3/20
摘要： Task—To provide a two-hand switch device that requires only a small load for each operation cycle.Means to Achieve the Task—The device comprises a left hand RF antenna placed in such a position as to enable a communication with the first RFID tag worn on the pre-determined position of the left hand of the worker only when the left hand of the worker is placed in a pre-determined left hand safe position, a right hand RF antenna placed in such a position as to enable a communication with the second RFID tag worn on the pre-determined position of the right hand of the worker only when the right hand of the worker is placed in a pre-determined right hand safe position and an output signal generating means for generating an output signal according to signals received by the left hand RF antenna and the right hand RF antenna.
摘要翻译：任务 - 提供双手开关设备，每个操作周期只需要较小的负载。实现任务的手段 - 该装置包括放置在如下位置的左手RF天线，即，只有当左手的左手可以与穿戴在工作人员左手的预定位置上的第一RFID标签通信时，工人被放置在预定的左手安全位置，右手RF天线放置在使得能够与穿戴在工人的右手的预定位置上的第二RFID标签的通信只有当工人的右手放置在预定的右手安全位置，以及输出信号发生装置，用于根据由左手RF天线和右手RF天线接收的信号产生输出信号。

7. 发明授权

US5475973A Rope with corrosion resistance and bending endurance characteristics 失效
标题翻译：绳具有耐腐蚀性和耐弯曲性能
公开(公告)号：US5475973A
公开(公告)日：1995-12-19
申请号：US316379
申请日：1994-09-30
申请人： Hiroaki Furukawa , Sadahiro Onimaru , Yukio Narita
发明人： Hiroaki Furukawa , Sadahiro Onimaru , Yukio Narita
IPC分类号： D07B1/06 , D07B1/14 , D02G3/38 , D02G3/40
CPC分类号： D07B1/068 , D07B1/0673 , D07B1/0693 , B60C2009/0014 , D07B2201/102 , D07B2201/1032 , D07B2201/2011 , D07B2201/2024 , D07B2201/2036 , D07B2201/2061 , D07B2205/306 , D07B2205/3071 , D07B2205/3092 , D07B2401/2025
摘要： A rope comprising a plurality of wires (2, 3, 4) made of a steel wire being twisted together; at least the wires which are arranged in such a manner as to be disposed on an outer surface of the rope (1) being made of a plated steel wire wherein a corrosion resistance is superior; at least said wires which are located in a center of the rope not being made of the wire wherein the corrosion resistance is superior.
摘要翻译：包括由钢绞线制成的多根线（2,3,4）绞合在一起的绳; 至少以布置在绳索（1）的外表面上的方式布置的电线由电镀钢丝制成，其中耐腐蚀性优异; 至少所述位于绳索中心的线不是由电线制成，其中耐腐蚀性优异。

8. 发明授权

US09231335B2 Connection structure for solar power generation module 有权
标题翻译：太阳能发电模块的连接结构
公开(公告)号：US09231335B2
公开(公告)日：2016-01-05
申请号：US13983944
申请日：2012-02-13
申请人： Tadayuki Ishii , Hiroaki Furukawa , Hiroyuki Kono
发明人： Tadayuki Ishii , Hiroaki Furukawa , Hiroyuki Kono
IPC分类号： H01L31/048 , H01R13/00 , H01R13/527 , H02S40/34 , H01R13/627
CPC分类号： H01R13/527 , C08L53/02 , C08L71/12 , H01R13/6273 , H02S40/34 , C08L53/025
摘要： A main object of the present invention is to provide a connection structure for a solar power generation module that has much better impact resistance at low temperature and flame retardancy even when made thinner and more compact. A connection structure for a solar power generation module according to the present invention is a connection structure for a solar power generation module, which links a solar power generation module with a cable for connecting to the solar power generation module, and includes a specific thermoplastic resin composition.
摘要翻译：本发明的主要目的在于提供一种太阳能发电模块的连接结构，即使在更薄更紧凑的情况下也能在低温下具有更好的耐冲击性和阻燃性。根据本发明的用于太阳能发电模块的连接结构是将太阳能发电模块与用于连接到太阳能发电模块的电缆连接的太阳能发电模块的连接结构，并且包括特定的热塑性树脂组成。

9. 发明授权

US08415673B2 Thin film transistor and semiconductor layer 有权
标题翻译：薄膜晶体管和半导体层
公开(公告)号：US08415673B2
公开(公告)日：2013-04-09
申请号：US13130141
申请日：2009-11-02
申请人： Hiroaki Furukawa
发明人： Hiroaki Furukawa
IPC分类号： H01L31/112 , H01L29/04
CPC分类号： H01L27/12 , H01L21/0335 , H01L29/0657
摘要： A semiconductor layer (100) according to the present invention includes a top surface (100o), a bottom surface (100u) and a side surface (100s). In a portion of the side surface (100s) which is in the vicinity of a border with the top surface (100o), a tangential line (T1) to the portion is inclined with respect to the normal to the bottom surface (100u). In a certain portion of the side surface (100s) which is farther from the top surface (100o) than the portion in the vicinity of the border, an angle made by a tangential line (T2) to the certain portion and a plane defined by the bottom surface (100u) is larger than an angle made by the tangential line (T1) to the portion in the vicinity of the border and the plane defined by the bottom surface (100u).
摘要翻译：根据本发明的半导体层（100）包括顶表面（100o），底表面（100u）和侧表面（100s）。在与顶表面（100o）的边界附近的侧表面（100s）的一部分中，该部分的切线（T1）相对于底表面（100u）的法线倾斜。在比顶部表面（100o）远离边界附近的侧表面（100s）的某一部分中，由切线（T2）与特定部分形成的角度和由底表面（100u）大于由切线（T1）与边界附近的部分和由底表面（100u）限定的平面所形成的角度。

10. 发明申请

US20130037870A1 SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130037870A1
公开(公告)日：2013-02-14
申请号：US13643389
申请日：2011-04-18
申请人： Hiroaki Furukawa
发明人： Hiroaki Furukawa
IPC分类号： H01L21/20 , H01L29/78
CPC分类号： H01L29/78633 , G02F1/136209 , G02F1/136286 , G02F2001/13606 , H01L21/76816 , H01L27/124 , H01L29/78648
摘要： Disclosed is a manufacturing method for a semiconductor device that prevents excessive etching of a conductive layer, even if the section where a conductive layer contact hole is formed is etched a plurality of times. A light-shielding film 20 is formed on a substrate 30. A buffer film 21, a gate insulating film 22, and a silicon film 11 are formed on the substrate 30 and the light-shielding film 20. A cleared section 40 is formed by etching to remove a section of the buffer film 21 and the gate insulating film 22, the section being on the light-shielding film 20 and disposed outside the area in which the silicon film 11 is formed. A gate electrode film 33 is formed in the cleared section 40. An inter-layer insulating film 23 is formed above the substrate 30. Etching is used to simultaneously form contact holes 45 and 46 extending to the silicon film 11 and a contact hole 44 extending to the light-shielding film 20 in the cleared section 40.
摘要翻译：公开了防止导电层过度蚀刻的半导体器件的制造方法，即使形成导电层接触孔的部分被蚀刻多次。在基板30上形成有遮光膜20.在基板30和遮光膜20上形成有缓冲膜21，栅极绝缘膜22和硅膜11.清除部40由蚀刻以除去缓冲膜21和栅极绝缘膜22的截面，该截面位于遮光膜20上，并且设置在形成有硅膜11的区域的外侧。栅极电极膜33形成在清除部分40中。层间绝缘膜23形成在基板30上方。蚀刻用于同时形成延伸到硅膜11的接触孔45和46以及延伸到硅膜11的接触孔44 到清除部分40中的遮光膜20。

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