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    • 3. 发明授权
    • Electrostatic capacitance detection device and smart card
    • 静电电容检测装置和智能卡
    • US07327596B2
    • 2008-02-05
    • US11207841
    • 2005-08-22
    • Hiroaki EbiharaMitsutoshi Miyasaka
    • Hiroaki EbiharaMitsutoshi Miyasaka
    • G11C11/24
    • G07C9/00087G06K9/0002G06K19/0718G07C2009/00095
    • An electrostatic capacitance detection device, for detecting electrostatic capacitance that changes in accordance with a distance from a target object to read surface contours of the target object, can sense electrostatic capacitance highly accurately even with using thin-film semiconductor devices. The electrostatic capacitance detection device includes electrostatic capacitance detection elements arranged in M rows and N columns, a power supply line that supplies power to the electrostatic capacitance detection elements, an output line that outputs a signal from the electrostatic capacitance detection elements, M row lines that select the electrostatic capacitance detection elements disposed on a specific row, and N column lines that select the electrostatic capacitance detection elements disposed on a specific column. Further, the electrostatic capacitance detection elements each include a signal detection element, a row selection element, a column selection element, and a signal amplification element.
    • 用于检测根据与目标物体的距离变化以读取目标物体的表面轮廓的静电电容的静电电容检测装置,即使使用薄膜半导体器件也能够高精度地感测静电电容。 静电电容检测装置包括以M行N列排列的静电电容检测元件,向静电电容检测元件供给电力的电源线,输出来自静电电容检测元件的信号的输出线,M行 选择设置在特定行上的静电电容检测元件,以及选择设置在特定列上的静电电容检测元件的N列线。 此外,静电电容检测元件各自包括信号检测元件,行选择元件,列选择元件和信号放大元件。
    • 4. 发明申请
    • Electrostatic capacitance detection device and smart card
    • US20060072355A1
    • 2006-04-06
    • US11207841
    • 2005-08-22
    • Hiroaki EbiharaMitsutoshi Miyasaka
    • Hiroaki EbiharaMitsutoshi Miyasaka
    • G11C11/24
    • G07C9/00087G06K9/0002G06K19/0718G07C2009/00095
    • An electrostatic capacitance detection device for detecting electrostatic capacitance that changes in accordance with a distance from a target object to read surface contours of the target object, including electrostatic capacitance detection elements arranged in M rows and N columns, a power supply line supplying power to the electrostatic capacitance detection elements, an output line outputting a signal from the electrostatic capacitance detection elements, M row lines selecting the electrostatic capacitance detection elements disposed on a specific row, and N column lines selecting the electrostatic capacitance detection elements disposed on a specific column. The electrostatic capacitance detection elements each includes a) a signal detection element storing a charge in accordance with the electrostatic capacitance, b) a row selection element causing the electrostatic capacitance detection element to enter a selected state in response to a signal from the row line, c) a column selection element causing the electrostatic capacitance detection element to enter a selected state in response to a signal from the column line, and d) a signal amplification element amplifying a signal corresponding to the charge stored in the signal detection element. The signal detection element includes a capacitance detection electrode and a reference capacitor. The signal amplification element is a thin-film semiconductor device for signal amplification including a source electrode, a drain electrode and a gate electrode. The row selection element is a thin-film semiconductor device for row selection including a source electrode, a drain electrode and a gate electrode. The column selection element is a thin-film semiconductor device for column selection including a source electrode, a drain electrode and a gate electrode. The reference capacitor includes a reference capacitor first electrode, a reference capacitor dielectric film and a reference capacitor second electrode. The gate electrode of the thin-film semiconductor device for signal amplification, the capacitance detection electrode, and the reference capacitor second electrode are coupled to each other. The gate electrode of the thin-film semiconductor device for row selection is coupled to the row line. The gate electrode of the thin-film semiconductor device for column selection is coupled to the column line. The source electrode and the drain electrode of the thin-film semiconductor device for signal amplification, the source electrode and the drain electrode of the thin-film semiconductor device for row selection, and the source electrode and the drain electrode of the thin-film semiconductor device for column selection are coupled in series between the power supply line and the output line. On-resistance of the thin-film semiconductor device for row selection and on-resistance of the thin-film semiconductor device for column selection are smaller than on-resistance of the thin-film semiconductor device for signal amplification.
    • 6. 发明申请
    • Solid-state imaging element and camera system
    • 固态成像元件和相机系统
    • US20110102622A1
    • 2011-05-05
    • US12923541
    • 2010-09-28
    • Hiroaki Ebihara
    • Hiroaki Ebihara
    • H04N5/228H04N5/335
    • H04N5/2353H04N5/3456H04N5/347H04N5/3532H04N5/3591H04N5/3745
    • A solid-state imaging element includes: a pixel section having a plurality of pixels arranged in a matrix form, each of the pixels converting an optical signal into an electric signal and storing the electric signal according to exposure time; a dummy pixel section having dummy pixels arranged in a matrix form; and pixel drive sections adapted to control the pixel operations in such a manner as to operate an electronic shutter on and read the pixel section and dummy pixel section, wherein when an electronic rolling shutter is operated in which the pixels are shuttered row by row, the pixel drive sections judge whether the current and next frames are shuttered concurrently and in parallel so as to determine in which horizontal read period the dummy pixel section is to be shuttered.
    • 固态成像元件包括:具有以矩阵形式布置的多个像素的像素部分,每个像素将光信号转换为电信号并根据曝光时间存储电信号; 具有以矩阵形式布置的虚拟像素的虚拟像素部分; 以及像素驱动部分,其适于以这样的方式控制像素操作,以便操作电子快门并读取像素部分和虚拟像素部分,其中当电子滚动快门被操作以逐行关闭的电子滚动快门时, 像素驱动部分判断当前帧和下一帧是并行还是并行关闭,以便确定在哪个水平读取周期中虚拟像素部分被关闭。
    • 7. 发明申请
    • SOLID STATE IMAGE CAPTURE DEVICE AND CAMERA SYSTEM
    • 固态图像捕获设备和摄像机系统
    • US20090303362A1
    • 2009-12-10
    • US12478040
    • 2009-06-04
    • Hiroaki Ebihara
    • Hiroaki Ebihara
    • H04N5/335
    • H04N5/3532H04N5/353H04N5/37455H04N5/3765
    • A solid-state image capture device includes: a pixel section in which pixels are arranged in a matrix; control lines; a pixel drive section that performs control, through the control lines, an operation of the pixels so as to perform a shutter operation of the pixel section and so as to perform reading; a reading circuit that reads signals from the pixels; and a shutter-mode switching section that controls an operation of the pixel drive section in accordance with a rolling shutter system in which exposure is performed for each row or a global shutter system in which exposure is simultaneously performed on all the pixels. The pixel drive section includes a shutter-mode corresponding section that causes an impedance value from the control lines to a power supply in a global shutter operation to be greater than an impedance value in a rolling shutter operation.
    • 固态图像捕获装置包括:像素部,其中像素以矩阵形式排列; 控制线 像素驱动部,其通过所述控制线进行所述像素的动作,以进行所述像素部的快门操作,并进行读取; 从像素读取信号的读取电路; 以及快门模式切换部分,其根据对其中所有像素同时执行曝光的每行或全局快门系统执行曝光的滚动快门系统来控制像素驱动部分的操作。 像素驱动部分包括快门模式对应部分,该快门模式对应部分使得在全局快门操作中从控制线到电源的阻抗值大于卷帘快门操作中的阻抗值。
    • 8. 发明授权
    • Solid-state image pickup device and camera system
    • 固态图像拾取装置和相机系统
    • US08773580B2
    • 2014-07-08
    • US13592834
    • 2012-08-23
    • Hiroaki EbiharaGo Asayama
    • Hiroaki EbiharaGo Asayama
    • H04N5/225H04N5/217H04N3/14H04N5/335
    • H04N5/357H04N5/3741
    • A solid-state image pickup device includes a pixel array unit that includes photoelectric conversion elements and in which a plurality of pixels are arranged in rows and columns that output, as pixel signals, electrical signals obtained by photoelectric conversion performed by amplifier elements to which pixel power supply voltage is supplied and that drive signal lines, a pixel power supply unit that generates the pixel power supply voltage from power supply voltage, the pixel power supply voltage being lower than the power supply voltage, and that supplies the pixel power supply voltage to the amplifier elements in the plurality of pixels, and a pixel signal read unit that reads pixel signals from the plurality of pixels.
    • 固态图像拾取装置包括像素阵列单元,其包括光电转换元件,并且其中多个像素以行和列排列,作为像素信号,通过由放大器元件执行的光电转换获得的电信号输出到像素 提供电源电压,驱动信号线,从电源电压生成像素电源电压的像素电源单元,像素电源电压低于电源电压,并将像素电源电压提供给 多个像素中的放大器元件以及从多个像素读取像素信号的像素信号读取单元。
    • 9. 发明授权
    • Solid-state imaging element and camera system that determine in which horizontal read period a dummy pixel section is to be shuttered
    • 固态成像元件和相机系统,其确定在哪个水平读取周期中要关闭虚拟像素部分
    • US08629923B2
    • 2014-01-14
    • US12923541
    • 2010-09-28
    • Hiroaki Ebihara
    • Hiroaki Ebihara
    • H04N9/64
    • H04N5/2353H04N5/3456H04N5/347H04N5/3532H04N5/3591H04N5/3745
    • A solid-state imaging element includes: a pixel section having a plurality of pixels arranged in a matrix form, each of the pixels converting an optical signal into an electric signal and storing the electric signal according to exposure time; a dummy pixel section having dummy pixels arranged in a matrix form; and pixel drive sections adapted to control the pixel operations in such a manner as to operate an electronic shutter on and read the pixel section and dummy pixel section, wherein when an electronic rolling shutter is operated in which the pixels are shuttered row by row, the pixel drive sections judge whether the current and next frames are shuttered concurrently and in parallel so as to determine in which horizontal read period the dummy pixel section is to be shuttered.
    • 固态成像元件包括:具有以矩阵形式布置的多个像素的像素部分,每个像素将光信号转换为电信号并根据曝光时间存储电信号; 具有以矩阵形式布置的虚拟像素的虚拟像素部分; 以及像素驱动部分,其适于以这样的方式控制像素操作,以便操作电子快门并读取像素部分和虚拟像素部分,其中当电子滚动快门被操作以逐行关闭的电子滚动快门时, 像素驱动部分判断当前帧和下一帧是并行还是并行关闭,以便确定在哪个水平读取周期中虚拟像素部分被关闭。
    • 10. 发明申请
    • IMAGE PICKUP DEVICE
    • 图像拾取器件
    • US20130016238A1
    • 2013-01-17
    • US13497373
    • 2010-09-14
    • Hiroaki EbiharaYoshikazu NittaHirotaka Kitami
    • Hiroaki EbiharaYoshikazu NittaHirotaka Kitami
    • H04N5/225
    • H04N9/045H04N5/343H04N5/3456H04N5/3458H04N9/04511
    • There is provided an image pickup device which eliminates the need for image processing different from one frame to another, and is capable of eliminating centroid displacement without additionally performing a centroid correction process, thereby improving an S/N ratio and image quality. A controller 140 sequentially reads signals from all pixels when an operation mode control signal designates all-pixel readout mode, whereas, controls to read a signal from a different pixel while varying a readout position from one field to another when the operation mode control signal designates selective readout mode, and a signal processing section 150 performs signal processing on a set of field data of a single field to output resultant data as frame data when the operation mode control signal designates all-pixel readout mode, whereas, adds up plural sets of field data over a plurality of fields to output resultant data as frame data when the operation mode control signal designates selective readout mode.
    • 提供了一种图像拾取装置,其不需要不同于一帧到另一帧的图像处理,并且能够消除重心位移而不进行重心校正处理,从而提高S / N比和图像质量。 当操作模式控制信号指定全像素读出模式时,控制器140顺序地从所有像素读取信号,而当操作模式控制信号指定时,控制器从不同的像素读取信号,同时从一个场改变读出位置 选择读取模式,信号处理部分150对单个场的一组场数据进行信号处理,以便当操作模式控制信号指定全像素读出模式时将合成数据输出为帧数据,而将多组 当操作模式控制信号指定选择性读出模式时,将多个场的场数据输出为帧数据。