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1. 发明授权

US06815073B2 Electronic component and method of manufacturing the same 失效
标题翻译：电子部件及其制造方法
公开(公告)号：US06815073B2
公开(公告)日：2004-11-09
申请号：US09941988
申请日：2001-08-30
申请人： Hirayoshi Tanei , Tsuyoshi Fujita , Masato Kirigaya , Yasuo Akutsu , Kaoru Uchiyama , Hiroshi Soma , Hiroatsu Tokuda
发明人： Hirayoshi Tanei , Tsuyoshi Fujita , Masato Kirigaya , Yasuo Akutsu , Kaoru Uchiyama , Hiroshi Soma , Hiroatsu Tokuda
IPC分类号： B32B1706
CPC分类号： H05K1/092 , H01L21/4867 , H01L23/49883 , H01L24/02 , H01L2224/04042 , H01L2224/45015 , H01L2224/45144 , H01L2224/85439 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/15787 , Y10T428/25 , H01L2924/00 , H01L2924/20753 , H01L2924/00014
摘要： The present invention has an object to enhance the reliability of the electrical connection of a silver-based conductor film on the surface of a glass ceramic board. In order to achieve the object, according to the present invention, by the use of a conductor paste containing a silver particle having a specific surface area of 0.3 m2/g to 3.0 m2/g and no glass, printing is carried out on a glass ceramic board and the conductor paste is fired at a firing temperature having a difference of ±50° C. from a softening temperature of amorphous borosilicate glass contained in the glass ceramic. Consequently, a silver-based conductor film having high reliability of the electrical connection is formed on the ceramic board.

2. 发明授权

US6118671A Circuit substrate and manufacture thereof, ceramic composition for circuit substrate, and electronics computer 失效
标题翻译：电路基板及其制造方法，电路基板用陶瓷组合物及电子计算机
公开(公告)号：US6118671A
公开(公告)日：2000-09-12
申请号：US103812
申请日：1998-06-24
申请人： Hirayoshi Tanei , Shoichi Iwanaga , Masahide Okamoto , Masato Nakamura , Kousaku Morita , Shousaku Ishihara , Fumikazu Tagami , Norio Sengoku , Tsuyoshi Fujita , Fumiyuki Kobayashi
发明人： Hirayoshi Tanei , Shoichi Iwanaga , Masahide Okamoto , Masato Nakamura , Kousaku Morita , Shousaku Ishihara , Fumikazu Tagami , Norio Sengoku , Tsuyoshi Fujita , Fumiyuki Kobayashi
IPC分类号： C03C3/089 , C03C8/16 , C03C14/00 , C03C17/06 , H01L21/48 , H01L23/15 , H05K1/03 , H05K1/11
CPC分类号： C03C14/004 , C03C17/06 , C03C3/089 , C03C8/16 , H01L21/4807 , H01L23/15 , C03C2217/253 , H01L2224/16 , H01L2224/16235 , H01L2924/01012 , H01L2924/01019 , H01L2924/01078 , H01L2924/09701 , H01L2924/15312 , H01L2924/15787 , H05K1/0306 , H05K3/4629 , Y10S428/901
摘要： Ceramic circuit substrate which is sintered at 900 to 1,050.degree. C. and have low relative dielectric constant, thermal expansion coefficient comparable to that of silicon, and high bending strength, and a method of manufacturing are provided by using a glass with a softening point of 850 to 1,100.degree. C., that is, a glass having a composition included in an area in FIG. 1 (triangular composition diagram of SiO.sub.2 --B.sub.2 O.sub.3 --R.sub.2 O, a composition is represented by the position of a small circle, the number in a small circle represents the composition number) defined with lines connecting points representing the first, third, tenth, eleventh, and fourth compositions respectively as raw material.
摘要翻译：陶瓷电路基板，其在900〜1050℃下烧结并具有低的相对介电常数，与硅相当的热膨胀系数和高的弯曲强度，以及制造方法是通过使用软化点为 850至1100℃，即具有包括在图1中的区域中的组成的玻璃。图1（SiO 2-B 2 O 3 -R 2 O的三角形组成图，组成由小圆的位置表示，小圆数表示组成数），用连接表示第一，第三，第十，第十一，和第四组分分别作为原料。

3. 发明授权

US5825632A Circuit substrate and electronics computer, using sintered glass ceramics 失效
标题翻译：电路基板和电子计算机，采用烧结玻璃陶瓷
公开(公告)号：US5825632A
公开(公告)日：1998-10-20
申请号：US512705
申请日：1995-08-08
申请人： Hirayoshi Tanei , Shoichi Iwanaga , Masahide Okamoto , Masato Nakamura , Kousaku Morita , Shousaku Ishihara , Fumiyuki Kobayashi , Fumikazu Tagami , Norio Sengoku , Tsuyoshi Fujita
发明人： Hirayoshi Tanei , Shoichi Iwanaga , Masahide Okamoto , Masato Nakamura , Kousaku Morita , Shousaku Ishihara , Fumiyuki Kobayashi , Fumikazu Tagami , Norio Sengoku , Tsuyoshi Fujita
IPC分类号： C03C3/089 , C03C8/16 , C03C14/00 , C03C17/06 , H01L21/48 , H01L23/15 , H05K1/03 , H05K1/11 , H05K1/16
CPC分类号： C03C14/004 , C03C17/06 , C03C3/089 , C03C8/16 , H01L21/4807 , H01L23/15 , C03C2217/253 , H01L2224/16 , H01L2224/16235 , H01L2924/01012 , H01L2924/01019 , H01L2924/01078 , H01L2924/09701 , H01L2924/15312 , H01L2924/15787 , H05K1/0306 , H05K3/4629 , Y10S428/901
摘要： Ceramic circuit substrate which is sintered at 900.degree. to 1,050.degree. C. and have low relative dielectric constant, thermal expansion coefficient comparable to that of silicon, and high bending strength, and a method of manufacturing are provided by using a glass with a softening point of 850.degree. to 1,100.degree. C., that is, a glass having a composition included in an area in FIG. 1 (triangular composition diagram of SiO.sub.2 --B.sub.2 O.sub.3 --R.sub.2 O, a composition is represented by the position of a small circle, the number in a small circle represents the composition number) defined with lines connecting points representing the first, third, tenth, eleventh, and fourth compositions respectively as raw material.
摘要翻译：在900〜1050℃下烧结并具有低相对介电常数，与硅相当的热膨胀系数和高弯曲强度的陶瓷电路基板及其制造方法通过使用具有软化点的玻璃为850〜1100℃，即具有图1的区域的成分的玻璃。图1（SiO 2-B 2 O 3 -R 2 O的三角形组成图，组成由小圆的位置表示，小圆数表示组成数），用连接表示第一，第三，第十，第十一，和第四组分分别作为原料。

4. 发明授权

US5396034A Thin film ceramic multilayer wiring hybrid board 失效
标题翻译：薄膜陶瓷多层布线混合板
公开(公告)号：US5396034A
公开(公告)日：1995-03-07
申请号：US27346
申请日：1993-03-08
申请人： Tsuyoshi Fujita , Shoichi Iwanaga , Hirayoshi Tanei
发明人： Tsuyoshi Fujita , Shoichi Iwanaga , Hirayoshi Tanei
IPC分类号： H05K3/46 , H01L21/48 , H01L23/538 , H05K1/00
CPC分类号： H01L23/5385 , H01L21/4857 , H05K3/4605 , H01L2224/16225 , H01L2924/09701 , H05K1/0306 , H05K2201/0154 , H05K3/4611 , H05K3/467
摘要： A ceramic thin film hybrid circuit board is provided by flattening the surface of a ceramic multi-layer interconnection substrate, forming capture pads on the flattened surface, filling spaces between the capture pads with an insulating layer composed of a glass material or an organic resin material, grinding the resultant surface until the capture pads are exposed to flatness, and laminating a plurality of thin film interconnection layers on the flattened surface. The ceramic thin film hybrid circuit board has an increased package density of mounted electronic parts such as LSIs and the like because failures of thin film interconnection layer generated owing to the roughness of the surface of the ceramic substrate, defects such as voids and the hollows produced with the capture pads are greatly reduced, and is very suitable for large scale electronic computers, in which the wiring length is reduced so as to reduce the signal delay.
摘要翻译：陶瓷薄膜混合电路板通过使陶瓷多层互连基板的表面平坦化，在平坦化表面上形成捕获垫来填充捕获垫之间的空间，由玻璃材料或有机树脂材料构成的绝缘层研磨所得到的表面直到捕获垫暴露于平坦度，并且在平坦表面上层叠多个薄膜互连层。陶瓷薄膜混合电路板由于陶瓷基板的表面的粗糙度而产生的薄膜互连层的故障，诸如空隙和中空产生的缺陷导致了诸如LSI等的安装电子部件的封装密度增加捕获垫大大减少，非常适合于大型电子计算机，其中布线长度减小以减少信号延迟。

5. 发明授权

US5342674A Ceramic composition and ceramic circuit board 失效
标题翻译：陶瓷组成和陶瓷电路板
公开(公告)号：US5342674A
公开(公告)日：1994-08-30
申请号：US28219
申请日：1993-03-09
申请人： Hirayoshi Tanei , Shoichi Iwanaga
发明人： Hirayoshi Tanei , Shoichi Iwanaga
IPC分类号： C04B35/16 , C03C14/00 , C04B35/18 , H01L23/15 , H05K1/03 , H05K3/46 , B32B3/00 , C03C1/00
CPC分类号： H01L23/15 , C03C14/004 , C04B35/18 , C03C2214/04 , H01L2924/0002 , H01L2924/09701 , Y10S428/901 , Y10T428/24917
摘要： A ceramic composition comprising 55-70 vol % of a borosilicate glass consisting of 65-88 wt % of SiO.sub.2, 5-25 wt % of B.sub.2 O.sub.3, 1-5 wt % of one or more of Li.sub.2 O, K.sub.2 O and Na.sub.2 O, and 0-5 wt % of Al.sub.2 O.sub.3, 5-30 vol % of alumina as filler, 5-35 vol % of cordierite and 0-20 vol % of quartz glass is provided for a ceramic circuit board for an electronic device such as an electronic computer.
摘要翻译：一种陶瓷组合物，其包含55-70体积％的由65-88重量％的SiO 2，5-25重量％的B 2 O 3，1-5重量％的一种或多种Li 2 O，K 2 O和Na 2 O组成的硼硅酸盐玻璃和0- 提供5重量％的Al 2 O 3，5-30体积％的氧化铝作为填料，5-35体积％的堇青石和0-20体积％的石英玻璃用于电子设备如电子计算机的陶瓷电路板。

6. 发明授权

US4308571A Low temperature-sinterable dielectric composition and thick film capacitor using the same 失效
标题翻译：低温烧结电介质组合物和使用其的厚膜电容器
公开(公告)号：US4308571A
公开(公告)日：1981-12-29
申请号：US134281
申请日：1980-03-26
申请人： Hirayoshi Tanei , Akira Ikegami , Noriyuki Taguchi , Katsuo Abe , Hiroshi Ohtsu , Tokio Isogai
发明人： Hirayoshi Tanei , Akira Ikegami , Noriyuki Taguchi , Katsuo Abe , Hiroshi Ohtsu , Tokio Isogai
IPC分类号： C04B35/46 , C04B35/472 , C04B35/499 , H01B3/12 , H01G4/12
CPC分类号： H01G4/1263 , C04B35/472 , C04B35/499
摘要： A low temperature-sinterable dielectric composition is provided, whose sintered composition when prepared by firing a uniform mixture consisting of lead ferrotungstate, lead titanate and manganese dioxide at a temperature of not higher than 1,000.degree. C. has the general formula A.Pb(Fe.sub.2/3 W.sub.1/3).sub.1-x Ti.sub.x O.sub.3 +B.MnO.sub.2, wherein 0.005.ltoreq..times..ltoreq.0.65, A=0.95-0.9995, and B=0.0005-0.05, a relative dielectric constant of at least 2,000 at 25.degree. C., a dissipation factor (tan .delta.) of not more than 5% at 25.degree. C., and a specific resistance of at least 10.sup.9 .OMEGA..cm at 25.degree. C. Also provided is a thick film capacitor having a dielectric layer prepared from said composition.
摘要翻译：提供了一种低温可烧结电介质组合物，其烧结组合物通过在不高于1000℃的温度下焙烧由钨酸铅，钛酸铅和二氧化锰组成的均匀混合物制备，具有通式A.Pb（Fe2 其中0.005≤x≤0.65，A = 0.95-0.9995和B = 0.0005-0.05，在25℃下的相对介电常数至少为2000。，在25℃下的损耗因子（tanδ）不超过5％，在25℃下的电阻率为至少为10Ω.EGEGA·cm。还提供了一种厚膜电容器，其具有由所述组成。

7. 发明授权

US5494721A Magnetic disc substrate 失效
标题翻译：磁盘基板
公开(公告)号：US5494721A
公开(公告)日：1996-02-27
申请号：US112255
申请日：1993-08-26
申请人： Nobuo Nakagawa , Hirayoshi Tanei
发明人： Nobuo Nakagawa , Hirayoshi Tanei
IPC分类号： G11B5/72 , G11B5/725 , G11B5/73 , G11B5/738 , G11B5/00
CPC分类号： G11B5/7315 , G11B5/72 , G11B5/725 , G11B5/738 , Y10S428/90 , Y10T428/21 , Y10T428/24421 , Y10T428/252 , Y10T428/315
摘要： A substrate for a magnetic disc, which comprises a crystallized glass consisting essentially of an amorphous glass continuous phase and crystal particles dispersed in the continuous phase, the substrate having fine projections of the crystal particles on the surface thereof, a method of producing the substrate, the magnetic disc using the substrate, and a method of producing the magnetic disc are provided. The crystallized glass is made from a glass material of a Li.sub.2 O--SiO.sub.2, Li.sub.2 O--Al.sub.2 O.sub.3 --SiO.sub.2, Li.sub.2 O--MgO--Al.sub.2 O.sub.3 --SiO.sub.2, MgO--Al.sub.2 O.sub.3 --SiO.sub.2, Na.sub.2 O--Al.sub.2 O.sub.3 --SiO .sub.2 or BaO--Al.sub.2 O.sub.3 --SiO.sub.2 system, and the crystal particles have one or more compositions selected from Li.sub.2 O--SiO.sub.2, Li.sub.2 O.2SiO.sub.2, Li.sub.2 O.Al.sub.2 O.sub.3.2Si.sub.2, Li.sub.2 O.Al.sub.2 O.sub.3 4SiO.sub.2, SiO.sub.2 and 2MgO--2Al.sub.2 O.sub.3.5SiO.sub.2, and an average particle size of 0.01 to 3.0 .mu.m, and are projected at a density of 10.sup.2 to 10.sup.6 / mm.sup.2 and at an average height of 0.005 to 0.2 .mu.m on the surface of the substrate, the total surface area of the projections of crystal particles occupying at most 30% of the unit surface area of the substrate. The projections are made by chemical etching with an aqueous solution of hydrofluoric acid, physical etching with sputtering under vacuum or ion-milling, or mechanical etching with sand blasting. The magnetic disc comprises the crystallized glass substrate, a chromium or chromium alloy undercoat film, thin magnetic film, protective carbon film and lubricant film.
摘要翻译：一种用于磁盘的基板，其包括基本上由无定形玻璃连续相组成的结晶玻璃和分散在连续相中的晶体颗粒，所述基板在其表面上具有晶体颗粒的微小突起，制造基板的方法，提供使用该基板的磁盘及其制造方法。结晶玻璃由Li2O-SiO2，Li2O-Al2O3-SiO2，Li2O-MgO-Al2O3-SiO2，MgO-Al2O3-SiO2，Na2O-Al2O3-SiO2或BaO-Al2O3-SiO2体系的玻璃材料制成，所述结晶粒子具有选自Li 2 O-SiO 2，Li 2 O 2·SiO 2，Li 2 O·Al 2 O 3·2Si 2，Li 2 O·Al 2 O 34·SiO 2，SiO 2和2MgO·2Al 2 O 3·5SiO 2中的一种以上的组成，平均粒径为0.01〜3.0μm，投影在基板表面上的密度为102〜106 / mm 2，平均高度为0.005〜0.2μm，晶体颗粒的突起的总表面积占据了单体表面积的至多30％基质。通过用氢氟酸的水溶液进行化学蚀刻，在真空下进行溅射物理蚀刻或离子研磨或通过喷砂机械蚀刻来进行突起。磁盘包括结晶玻璃基板，铬或铬合金底涂层，薄磁膜，保护性碳膜和润滑膜。

8. 发明授权

US5093173A Magnetic disc comprising a substrate of an amorphous glass continuous phase dispersed with crystal particles which produce a structurally defined surface on the substrate 失效
标题翻译：磁盘包括分散有晶体颗粒的无定形玻璃连续相的基底，其在基底上产生结构上限定的表面
公开(公告)号：US5093173A
公开(公告)日：1992-03-03
申请号：US462775
申请日：1990-01-10
申请人： Nobuo Nakagawa , Hirayoshi Tanei
发明人： Nobuo Nakagawa , Hirayoshi Tanei
IPC分类号： G11B5/82 , G11B5/72 , G11B5/725 , G11B5/73 , G11B5/738 , G11B5/84
CPC分类号： G11B5/7315 , G11B5/72 , G11B5/725 , G11B5/7325 , G11B5/738 , Y10S428/90 , Y10T428/252 , Y10T428/30
摘要： A substrate for a magnetic disc, which comprises a crystallized glass consisting essentially of an amorphous glass continuous phase and crystal particles dispersed in the continuous phase, the substrate having fine projections of the crystal particles on the surface thereof, a method of producing the substrate, the magnetic disc using the substrate, and a method of producing the magnetic disc are provided. The crystallized glass is made from a glass material of a Li.sub.2 O-SiO.sub.2, Li.sub.2 O-Al.sub.2 O.sub.3 -SiO.sub.2, Li.sub.2 O-MgO-Al.sub.2 O.sub.3 -SiO.sub.2, MgO-Al.sub.2 O.sub.3 -SiO.sub.2, Na.sub.2 O-Al.sub.2 O.sub.3 -SiO.sub.2 or BaO-Al.sub.2 O.sub.3 -SiO.sub.2 system, and the crystal particles have one or more compositions selected from Li.sub.2 O.multidot.SiO.sub.2, Li.sub.2 O.multidot.2SiO.sub.2, Li.sub.2 O.multidot.Al.sub.2 O.sub.3 .multidot.2SiO.sub.2, Li.sub.2 O.multidot.Al.sub.2 O.sub.3 .multidot.4SiO.sub.2, SiO.sub.2 and 2MgO.multidot.2Al.sub.2 O.sub.3 .multidot.5SiO.sub.2, and an average particle size of 0.01 to 3.0 .mu.m, and are projected at a density of 10.sup.2 to 10.sup.6 /mm.sup.2 and at an average height of 0.005 to 0.2 .mu.m on the surface of the substrate, the total surface area of the projections of crystal particles occupying at most 30% of the unit surface area of the substrate. The projections are made by chemical etching with an aqueous solution of hydrofluoric acid, physical etching with sputtering under vacuum or ion-milling, or mechanical etching with sand blasting. The magnetic disc comprises the crystallized glass substrate, a chromium or chromium alloy undercoat film, thin magnetic film, protective carbon film and lubricant film.
摘要翻译：一种用于磁盘的基板，其包括基本上由无定形玻璃连续相组成的结晶玻璃和分散在连续相中的晶体颗粒，所述基板在其表面上具有晶体颗粒的微小突起，制造基板的方法，提供使用该基板的磁盘及其制造方法。结晶玻璃由Li2O-SiO2，Li2O-Al2O3-SiO2，Li2O-MgO-Al2O3-SiO2，MgO-Al2O3-SiO2，Na2O-Al2O3-SiO2或BaO-Al2O3-SiO2体系的玻璃材料制成，晶体颗粒具有选自Li 2 O x SiO 2，Li 2 O x 2 SiO 2，Li 2 O x Al 2 O 3 xSiSiO 2，Li 2 O x Al 2 O 3 x 4 SiO 2，SiO 2和2MgO 2 Al 2 O x xSiSiO 2中的一种或多种组合物，平均粒径为0.01〜3.0μm，以102〜106 / mm 2的密度投影，平均高度在基板表面上为0.005〜0.2μm，晶体颗粒的突起的总表面积占基板的单位面积的至多30％。通过用氢氟酸的水溶液进行化学蚀刻，在真空下进行溅射物理蚀刻或离子研磨或通过喷砂机械蚀刻来进行突起。磁盘包括结晶玻璃基板，铬或铬合金底涂层，薄磁膜，保护性碳膜和润滑膜。

9. 发明授权

US4386387A Low temperature sintering porcelain composition 失效
标题翻译：低温烧结瓷组成
公开(公告)号：US4386387A
公开(公告)日：1983-05-31
申请号：US321609
申请日：1981-11-16
申请人： Hirayoshi Tanei , Akira Ikegami , Hideo Arima , Tokio Isogai , Kiyoshi Kawabata
发明人： Hirayoshi Tanei , Akira Ikegami , Hideo Arima , Tokio Isogai , Kiyoshi Kawabata
IPC分类号： C04B35/00 , C04B35/499 , H01G4/12 , C04B35/46
CPC分类号： H01G4/1263 , C04B35/499
摘要： A porcelain composition comprising Pb(Fe.sub.2/3 W.sub.1/3)O.sub.3, PbTiO.sub.3 and Pb(Yb.sub.1/2 Nb.sub.1/2)O.sub.3 preferably within the range as defined by closed area of A-B-C-D-A in the accompanying triangular diagram can give a sintered product by sintering at a temperature as low as 1000.degree. C. or lower. The resulting sintered product has a high relative dielectric constant and a small dielectric loss tangent.
摘要翻译：包含Pb（Fe2 / 3W1 / 3）O3，PbTiO3和Pb（Yb1 / 2Nb1 / 2）O3的瓷组合物优选在由三角形图中的ABCDA的封闭区域限定的范围内，可以通过在温度低至1000℃或更低。所得到的烧结产品具有高的相对介电常数和小的介电损耗角正切。

10. 发明授权

US06707682B2 Low-EMI electronic apparatus, low-EMI circuit board, and method of manufacturing the low-EMI circuit board 失效
标题翻译：低EMI电子设备，低EMI电路板以及制造低EMI电路板的方法
公开(公告)号：US06707682B2
公开(公告)日：2004-03-16
申请号：US09956909
申请日：2001-09-21
申请人： Yutaka Akiba , Yasunori Narizuka , Hirayoshi Tanei , Naoya Kitamura
发明人： Yutaka Akiba , Yasunori Narizuka , Hirayoshi Tanei , Naoya Kitamura
IPC分类号： H05K118
CPC分类号： H05K1/0246 , H01L23/5383 , H01L23/552 , H01L25/16 , H01L2224/16 , H01L2924/00014 , H01L2924/01019 , H01L2924/01046 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/16152 , H01L2924/19105 , H01L2924/19106 , H01L2924/3011 , H01L2924/3025 , H05K1/0227 , H05K1/0231 , H05K1/0234 , H05K1/092 , H05K1/113 , H05K1/115 , H05K1/162 , H05K1/167 , H05K3/403 , H05K3/4053 , H05K3/429 , H05K3/4611 , H05K3/4614 , H05K3/4652 , H05K3/467 , H05K9/0039 , H05K2201/0209 , H05K2201/0715 , H05K2201/093 , H05K2201/09309 , H05K2201/09354 , H05K2201/09509 , H05K2201/09518 , H05K2201/09563 , H05K2201/09663 , H05K2201/0979 , H05K2201/10022 , H05K2201/10045 , H05K2201/10446 , H05K2201/10636 , H05K2201/10689 , Y02P70/611 , Y10T29/49155 , H01L2224/0401
摘要： A low-EMI circuit which realizes a high mounting density by converting the potential fluctuation of a power supply layer with respect to a ground layer which occurs on switching an IC device etc., into Joule's heat in the substrate without using any parts as a countermeasure against the EMI. Its structure, a circuit board using it, and a method of manufacturing the circuit board are also disclosed. Parallel plate lines in which the Q-value of the stray capacitance between solid layers viewed from the power supply layer and ground layer is equivalently reduced and which are matchedly terminated by forming a structure in which a resistor (resistor layer) and another ground layer are provided in addition to the power supply layer and the ground layer on a multilayered circuit board. A closed shield structure is also disclosed.
摘要翻译：通过将电源层的电位波动相对于在切换IC器件等而发生的接地层的电位波动转换为基底中的焦耳热而不使用任何部件作为对策来实现高安装密度的低EMI电路针对EMI。还公开了其结构，使用它的电路板以及制造电路板的方法。从电源层和接地层观察的固体层之间的杂散电容的Q值的平行板线等效地减少，并且通过形成其中电阻器（电阻层）和另一接地层的结构匹配地终止除了在多层电路板上的电源层和接地层之外提供。还公开了封闭的屏蔽结构。

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