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1. 发明申请

US20050073479A1 Display apparatus and method for driving display panel 审中-公开
标题翻译：用于驱动显示面板的显示装置和方法
公开(公告)号：US20050073479A1
公开(公告)日：2005-04-07
申请号：US10953287
申请日：2004-09-30
申请人： Hikaru Takahashi , Hideto Endo , Keishi Saito , Kazuo Yahagi , Yuya Shiozaki , Yuichi Sakai , Shigeru Iwaoka , Nobuhiko Saegusa
发明人： Hikaru Takahashi , Hideto Endo , Keishi Saito , Kazuo Yahagi , Yuya Shiozaki , Yuichi Sakai , Shigeru Iwaoka , Nobuhiko Saegusa
IPC分类号： G09G3/20 , G09G3/288 , G09G3/291 , G09G3/292 , G09G3/293 , G09G3/294 , G09G3/298 , H01J11/12 , H01J11/20 , H01J11/22 , H01J11/24 , H01J11/26 , H01J11/32 , H01J11/34 , H01J11/36 , H01J11/38 , H01J11/44 , H04N5/66 , G09G3/28
CPC分类号： G09G3/2927 , G09G3/293 , G09G3/2935 , G09G3/294 , G09G3/2983 , G09G2320/0228 , H01J11/12 , H01J11/36 , H01J11/38
摘要： A display apparatus which sequentially applies a scanning pulse to one row electrode of the row electrode pair while applying a pixel data pulse corresponding to the pixel data to the column electrodes one display line by one display line, simultaneously with the scanning pulse, to selectively produce an address discharge in the second discharge cell in the address period, applies a sustain pulse to the row electrode pairs in the sustain period, and produces a reset discharge in the same discharge current direction as the address discharge between one row electrode of the row electrode pair and the column electrode in the second discharge cell immediately before the address period of at least the first sub-field of the one-field display period, and a method of driving the display panel.
摘要翻译：一种显示装置，其与行电极对的一个行电极顺序地施加扫描脉冲，同时与扫描脉冲同时地将与像素数据对应的像素数据脉冲施加到列电极一个显示行一行显示行，以选择性地产生在寻址周期中第二放电单元中的寻址放电在维持周期中对行电极对施加维持脉冲，并且产生与行电极的一个行电极之间的寻址放电相同的放电电流方向的复位放电以及紧接在一场显示周期的第一子场的寻址周期之前的第二放电单元中的列电极以及驱动显示面板的方法。

2. 发明申请

US20110098568A1 IMAGE FORMING METHOD USING ULTRASOUND AND ABERRATION CORRECTION METHOD 有权
标题翻译：使用超声和去噪校正方法的图像形成方法
公开(公告)号：US20110098568A1
公开(公告)日：2011-04-28
申请号：US12937535
申请日：2009-04-03
申请人： Yasuhiro Someda , Kenichi Nagae , Katsuya Oikawa , Keishi Saito , Yasuyoshi Takai , Hirofumi Taki , Toru Sato
发明人： Yasuhiro Someda , Kenichi Nagae , Katsuya Oikawa , Keishi Saito , Yasuyoshi Takai , Hirofumi Taki , Toru Sato
IPC分类号： A61B8/14
CPC分类号： G01S7/52049 , G01S15/8952
摘要： An ultrasound image forming method comprises a first step of receiving a first signal reflected from the object, a second step of obtaining an aberration correction value based on the first signal thus received, a third step of receiving a second signal reflected from the object when a second ultrasound corrected based on the aberration correction value is transmitted to the object, and a fourth step of forming an image from the aberration correction value and the second signal. The center frequency of the second ultrasound is between 0.5 MHz and 20 MHz, the center frequency of the first ultrasound is between 3/16 and 9/20 of the center frequency of the second ultrasound. By this method, an accurate aberration correction value can be obtained and an ultrasound imaging with high resolution can be achieved even if aberrations are large and difficult to correct.
摘要翻译：超声波图像形成方法包括：接收从对象反射的第一信号的第一步骤，基于如此接收的第一信号获得像差校正值的第二步骤;接收从物体反射的第二信号的第三步骤，当第基于像差校正值校正的第二超声波被发送到物体，以及第四步骤，根据像差校正值和第二信号形成图像。第二超声的中心频率在0.5MHz和20MHz之间，第一超声的中心频率在第二超声的中心频率的3/16和9/20之间。通过该方法，可以获得精确的像差校正值，即使像差大，难以校正也能够实现高分辨率的超声波成像。

3. 发明授权

US07700165B2 Method of forming deposited film and method of forming photovoltaic element 失效
标题翻译：形成沉积膜的方法和形成光伏元件的方法
公开(公告)号：US07700165B2
公开(公告)日：2010-04-20
申请号：US11627066
申请日：2007-01-25
申请人： Yasuyoshi Takai , Masafumi Sano , Keishi Saito
发明人： Yasuyoshi Takai , Masafumi Sano , Keishi Saito
IPC分类号： H05H1/24
CPC分类号： C23C16/24 , C23C16/45523 , C23C16/545 , Y02E10/545 , Y02E10/548
摘要： Provided is a deposited film containing microcrystalline silicon by plasma CVD, which includes changing at least one of conditions selected from a high frequency power density, a bias voltage with respect to an interelectrode distance, a bias current with respect to an electrode area, a high frequency power with respect to a source gas flow rate, a ratio of a diluting gas flow rate to a source gas flow rate, a substrate temperature, a pressure, and an interelectrode distance, between conditions for forming a deposited film of a microcrystalline region and conditions for forming a deposited film of an amorphous region; and forming a deposited film under conditions within a predetermined range in the vicinity of boundary conditions under which the crystal system of the deposited film substantially changes between a amorphous state and a microcrystalline state.
摘要翻译：提供了通过等离子体CVD包含微晶硅的沉积膜，其包括改变选自高频功率密度，相对于电极间距离的偏置电压，相对于电极面积的偏置电流，高电平用于形成微晶区域的沉积膜的条件和相对于源气体流量的稀释气体流量的比率，稀释气体流量与源气体流量的比率，基板温度，压力和电极间距离形成非晶区沉积膜的条件; 以及在沉积膜的晶体系统在非晶态和微晶态之间基本上变化的边界条件附近的预定范围内的条件下形成沉积膜。

4. 发明申请

US20090146072A1 SENSOR AND IMAGE PICKUP DEVICE 有权
标题翻译：传感器和图像拾取器件
公开(公告)号：US20090146072A1
公开(公告)日：2009-06-11
申请号：US12368592
申请日：2009-02-10
申请人： Keishi Saito , Hideo Hosono , Toshio Kamiya , Kenji Nomura
发明人： Keishi Saito , Hideo Hosono , Toshio Kamiya , Kenji Nomura
IPC分类号： G01T1/24
CPC分类号： H01L31/032 , H01L27/14601 , H01L27/14632 , H01L27/14658 , H01L29/7869 , H01L31/02322 , H01L31/085 , H01L31/09 , H01L31/118
摘要： A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.
摘要翻译：一种用于检测接收的电磁波的传感器，包括插在第一电极和第二电极之间的第一电极，第二电极和无定形氧化物层。

5. 发明授权

US07453065B2 Sensor and image pickup device 有权
标题翻译：传感器和图像拾取装置
公开(公告)号：US07453065B2
公开(公告)日：2008-11-18
申请号：US11269648
申请日：2005-11-09
申请人： Keishi Saito , Hideo Hosono , Toshio Kamiya , Kenji Nomura
发明人： Keishi Saito , Hideo Hosono , Toshio Kamiya , Kenji Nomura
IPC分类号： G01J5/20
CPC分类号： H01L31/032 , H01L27/14601 , H01L27/14632 , H01L27/14658 , H01L29/7869 , H01L31/02322 , H01L31/085 , H01L31/09 , H01L31/118
摘要： A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.
摘要翻译：一种用于检测接收的电磁波的传感器，包括插在第一电极和第二电极之间的第一电极，第二电极和无定形氧化物层。

6. 发明授权

US06483021B2 Stacked photovoltaic element 有权
标题翻译：堆叠光电元件
公开(公告)号：US06483021B2
公开(公告)日：2002-11-19
申请号：US09257259
申请日：1999-02-25
申请人： Keishi Saito
发明人： Keishi Saito
IPC分类号： H01L3100
CPC分类号： H01L31/03685 , H01L31/03687 , H01L31/076 , H01L31/206 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： The present invention provides a stacked photovoltaic element formed by stacking, on a substrate, at least a pin junction constituent element having a microcrystalline semiconductor in an i-type semiconductor layer and a pin junction constituent element having an amorphous semiconductor in an i-type semiconductor layer, wherein a current is controlled by the pin junction constituent element having the microcrystalline semiconductor in the i-type semiconductor layer, thereby obtaining a stacked photovoltaic element with a high photoelectric conversion efficiency and a reduced variation in the photoelectric conversion efficiency for a long light irradiation time.
摘要翻译：本发明提供一种层叠的光电元件，其通过在i型半导体中在至少具有微晶半导体的i型半导体层中的至少一个pin结构成元件和具有非晶半导体的pin结构成元件层，其中电流由在i型半导体层中具有微晶半导体的pin结构成元件控制，从而获得具有高光电转换效率的叠层光伏元件和对于长光的光电转换效率的变化减小照射时间。

7. 发明授权

US5456762A Photoelectric conversion elements 失效
标题翻译：光电转换元件
公开(公告)号：US5456762A
公开(公告)日：1995-10-10
申请号：US171430
申请日：1993-12-22
申请人： Toshimitsu Kariya , Keishi Saito
发明人： Toshimitsu Kariya , Keishi Saito
IPC分类号： H01L27/00 , H01L31/036 , H01L31/04 , H01L31/052 , H01L31/075 , H01L31/10 , H01L31/105 , H01L31/18 , H01L31/20 , H01L31/0368 , H01L31/0376
CPC分类号： H01L31/076 , H01L31/036 , H01L31/056 , H01L31/075 , H01L31/1055 , H01L31/1812 , H01L31/202 , H01L31/206 , Y02E10/52 , Y02E10/548 , Y02P70/521
摘要： The present invention provides photoelectric conversion elements, wherein the long wavelength sensitivity, the fill factor, and the photoelectric conversion efficiency are improved. In order to provide photoelectric conversion elements wherein light deterioration is reduced, the field durability enhanced, and the temperature characteristic improved, a p-layer composed of amorphous silicon type semiconductor containing hydrogen, an i-layer composed of amorphous silicon-germanium type semiconductor containing hydrogen and further including microcrystalline germanium, and an n-layer composed of amorphous silicon type semiconductor containing hydrogen are laminated on a substrate, the i-layer being formed at a substrate temperature from 400.degree. to 600.degree. C. by microwave plasma CVD, the particle diameter of said microcrystalline germanium ranging from 50 to 500 angstroms. Also, the content of microcrystalline germanium varies in the layer thickness direction.
摘要翻译：本发明提供光电转换元件，其中提高了长波长灵敏度，填充因子和光电转换效率。为了提供光劣化降低的光电转换元件，提高了场耐久性，提高了温度特性，由含有氢的非晶硅型半导体构成的p层，由含有氢的非晶硅锗型半导体构成的i层氢并且还包括微晶锗，并且由含有氢的非晶硅型半导体构成的n层层叠在基板上，所述i层通过微波等离子体CVD在400〜600℃的基板温度下形成，所述微晶锗的粒径为50-500埃。此外，微晶锗的含量在层厚度方向上变化。

8. 发明授权

US5371380A Si- and/or Ge-containing non-single crystalline semiconductor film with an average radius of 3.5 A or less as for microvoids contained therein and a microvoid density 1.times.10.sup.(19) (cm.sup.-3) or less 失效
标题翻译：平均半径为3.5A或更小的含Si和/或Ge的非单晶半导体膜，对于其中所含的微孔，微孔密度为1×10（19）（cm-3）或更小
公开(公告)号：US5371380A
公开(公告)日：1994-12-06
申请号：US188731
申请日：1994-01-31
申请人： Keishi Saito , Tatsuyuki Aoike , Mitsuyuki Niwa , Toshimitsu Kariya , Yuzo Koda
发明人： Keishi Saito , Tatsuyuki Aoike , Mitsuyuki Niwa , Toshimitsu Kariya , Yuzo Koda
IPC分类号： H01L21/205 , H01L29/16 , H01L29/26 , H01L45/00
CPC分类号： H01L29/1604 , H01L21/02422 , H01L21/02425 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L29/263
摘要： A non-single crystalline semiconductor containing at least one kind of atoms selected from the group consisting of silicon atoms (Si) and germanium atoms (Ge) as a matrix, and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and halogen atoms (X), wherein said non-single crystalline semiconductor has an average radius of 3.5 .ANG. or less and a density of 1.times.10.sup.19 (cm.sup.-3) or less as for microvoids contained therein. The non-single crystalline semiconductor excels in semiconductor characteristics and adhesion with other materials and are effectively usable as a constituent element of various semiconductor devices.
摘要翻译：含有选自硅原子（Si）和锗原子（Ge）作为基体的至少一种原子的非单晶半导体，以及选自氢原子中的至少一种原子（ H）和卤素原子（X），其中所述非单晶半导体的平均半径为3.5AANG或更小，密度为1×1019（cm-3）或更小，对于其中包含的微孔。非单晶半导体具有优异的半导体特性和与其他材料的粘合性，并且可以有效地用作各种半导体器件的组成元件。

9. 发明授权

US08084743B2 Sensor and image pickup device 有权
标题翻译：传感器和图像拾取装置
公开(公告)号：US08084743B2
公开(公告)日：2011-12-27
申请号：US12164917
申请日：2008-06-30
申请人： Keishi Saito , Hideo Hosono , Toshio Kamiya , Kenji Nomura
发明人： Keishi Saito , Hideo Hosono , Toshio Kamiya , Kenji Nomura
IPC分类号： G01T1/24
CPC分类号： H01L31/032 , H01L27/14601 , H01L27/14632 , H01L27/14658 , H01L29/7869 , H01L31/02322 , H01L31/085 , H01L31/09 , H01L31/118
摘要： A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.
摘要翻译：一种用于检测接收的电磁波的传感器，包括插在第一电极和第二电极之间的第一电极，第二电极和无定形氧化物层。

10. 发明授权

US07535010B2 Sensor and image pickup device 有权
标题翻译：传感器和图像拾取装置
公开(公告)号：US07535010B2
公开(公告)日：2009-05-19
申请号：US11937259
申请日：2007-11-08
申请人： Keishi Saito , Hideo Hosono , Toshio Kamiya , Kenji Nomura
发明人： Keishi Saito , Hideo Hosono , Toshio Kamiya , Kenji Nomura
IPC分类号： G01T1/24
CPC分类号： H01L31/032 , H01L27/14601 , H01L27/14632 , H01L27/14658 , H01L29/7869 , H01L31/02322 , H01L31/085 , H01L31/09 , H01L31/118
摘要： A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.
摘要翻译：一种用于检测接收的电磁波的传感器，包括插在第一电极和第二电极之间的第一电极，第二电极和无定形氧化物层。

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