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1. 发明申请

US20200067554A1 SOLID PREPARATION, METHOD FOR PRODUCING SOLID PREPARATION, AND METHOD FOR GENERATING HYDROGEN 审中-公开
公开(公告)号：US20200067554A1
公开(公告)日：2020-02-27
申请号：US16667477
申请日：2019-10-29
申请人： Hikaru Kobayashi , KIT Co. Ltd. , NISSHIN KASEI CO., LTD.
发明人： Hikaru Kobayashi , Yuki Kobayashi
IPC分类号： H04B1/3827 , G06F1/16 , H01Q1/24 , H01Q1/27 , H04B1/38 , H01Q1/22 , G04R60/06 , H04B5/00
摘要： One solid preparation of the present invention mainly includes silicon fine particles, and has a capability of generating hydrogen. In addition, one specific example of the solid preparation mainly includes silicon fine particles having a crystallite diameter principally of 1 nm or more and 100 nm or less, and exhibits a capability of generating hydrogen in an amount of 3 ml/g or more when brought into contact with a water-containing liquid having a pH value of 7 or more. In this solid preparation, hydrogen is generated when the silicon fine particles are brought into contact with a water-containing liquid having a pH value of 7 or more. Therefore, taking advantage of the characteristics of the solid preparation, generation of hydrogen is promoted in, for example, a gastrointestinal tract where the pH value is 7 or more due to secretion of pancreatic fluid after passage through the stomach after oral ingestion.

2. 发明申请

US20190216082A1 COMPOUND, PRODUCTION METHOD THEREFOR, AND HYDROGEN SUPPLY METHOD 审中-公开
公开(公告)号：US20190216082A1
公开(公告)日：2019-07-18
申请号：US16327782
申请日：2017-07-27
申请人： Hikaru Kobayashi , KIT Co., Ltd. , NISSHIN KASEI CO., LTD.
发明人： Hikaru Kobayashi , Yuki Kobayashi
IPC分类号： A01N25/12 , C01B33/02 , C01B3/06 , C05G3/00 , C02F1/68
CPC分类号： A01N25/12 , C01B3/06 , C01B33/02 , C01P2004/50 , C01P2004/64 , C02F1/68 , C05G3/00
摘要： One compound (100) according to the present invention contains silicon fine particles having a capability of generating hydrogen or aggregates of the silicon fine particles. The compound that contains the silicon fine particles or the aggregates having a capability of generating hydrogen is capable of generating hydrogen in the body of, for example, an animal that has ingested the compound. For a plant, the compound can be disposed or charged into, for example, moisture (water-containing liquid) or fertilizer to be provided to the plant, to supply the plant with hydrogen generated from the compound.

3. 发明申请

US20190231660A1 HYDROGEN SUPPLY MATERIAL AND PRODUCTION THEREFOR, AND HYDROGEN SUPPLY METHOD 审中-公开
公开(公告)号：US20190231660A1
公开(公告)日：2019-08-01
申请号：US16327794
申请日：2017-07-27
申请人： Hikaru Kobayashi , KIT Co., Ltd. , NISSHIN KASEI CO., LTD.
发明人： Hikaru Kobayashi , Yuki Kobayashi
IPC分类号： A61K8/25 , A61K33/10 , A61Q19/10 , C01B3/08 , C01B33/02 , C11D7/06
CPC分类号： A61K8/25 , A61K33/10 , A61Q19/10 , C01B3/08 , C01B33/02 , C11D7/06
摘要： A layered solid formulation (100a) as one hydrogen supply material (200) according to the present invention includes silicon fine particles having a capability of generating hydrogen and aggregates of the silicon fine particles, and a physiologically acceptable medium (90b) that gets contact with the silicon fine particles or the aggregates thereof. The hydrogen supply material (200) is a hydrogen supply material for bringing the hydrogen into contact with the skin and/or the mucous membrane through the medium (90b).

4. 发明授权

US11840450B2 Hydrogen production apparatus, hydrogen production method, silicon fine particles for hydrogen production, and production method for silicon fine particles for hydrogen production 有权
公开(公告)号：US11840450B2
公开(公告)日：2023-12-12
申请号：US17314089
申请日：2021-05-07
申请人： NISSHIN KASEI CO., LTD.
发明人： Hikaru Kobayashi , Toru Higo , Yayoi Kanatani
IPC分类号： C01B3/06 , B01J8/02 , C01B33/021 , B01J7/02 , B01J8/20
CPC分类号： C01B3/06 , B01J7/02 , B01J8/02 , B01J8/20 , C01B33/021 , B01J2208/00592 , B01J2208/024 , Y02E60/36
摘要： An exemplary hydrogen production apparatus 100 according to the present invention includes a grinding unit 10 configured to grind a silicon chip or a silicon grinding scrap 1 to form silicon fine particles 2, and a hydrogen generator 70 configured to generate hydrogen by causing the silicon fine particles 2 to contact with as well as disperse in, or to contact with or dispersed in water or an aqueous solution. The hydrogen production apparatus 100 can achieve reliable production of a practically adequate amount of hydrogen from a start material of silicon chips or silicon grinding scraps that are ordinarily regarded as waste. The hydrogen production apparatus thus effectively utilizes the silicon chips or the silicon grinding scraps so as to contribute to environmental protection as well as to significant reduction in cost for production of hydrogen that is utilized as an energy source in the next generation.

5. 发明申请

US20180001669A1 PRINT METHOD, INK SET, AND INKJET PRINT DEVICE 审中-公开
公开(公告)号：US20180001669A1
公开(公告)日：2018-01-04
申请号：US15634706
申请日：2017-06-27
申请人： Juichi FURUKAWA , Masaaki Tsuda , Hidefumi Nagashima , Yukihiro Imanaga , Masahiro Kido , Hikaru Kobayashi , Yuta Nakamura
发明人： Juichi FURUKAWA , Masaaki Tsuda , Hidefumi Nagashima , Yukihiro Imanaga , Masahiro Kido , Hikaru Kobayashi , Yuta Nakamura
IPC分类号： B41J11/00 , C09D11/40 , C09D11/38
CPC分类号： B41J11/002 , B41M5/0011 , C09D11/322 , C09D11/38 , C09D11/40
摘要： A print method includes applying a first ink to a recording medium to form a first ink print layer, drying the first ink print layer to a drying ratio of 30 percent or less, and applying a second ink having a color different from that of the first ink to the first ink print layer to form a second ink print layer thereon, wherein the first ink includes a urethane resin particle and a water-soluble organic solvent having a boiling point of from 100 to 180 degrees C. or β-alkoxy propionamide of Chemical formula I, where R1 represents a methyl group, an ethyl group, a propyl group, or a butyl group and R2 and R3 each, independently represent alkyl groups having one to six carbon atoms, and the first ink and the second ink includes no organic solvent having a boiling point of 280 degrees C. or higher under 1 atm.

6. 发明申请

US20130005107A1 SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD OF SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130005107A1
公开(公告)日：2013-01-03
申请号：US13634784
申请日：2011-03-02
申请人： Shigeki Imai , Takafumi Shimatani , Hikaru Kobayashi
发明人： Shigeki Imai , Takafumi Shimatani , Hikaru Kobayashi
IPC分类号： H01L21/336
CPC分类号： H01L29/78636 , H01L21/02068 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/02664 , H01L21/02672 , H01L21/32105 , H01L27/1277 , H01L29/66757 , H01L29/78618
摘要： Disclosed is a thin-film transistor (10) manufacturing method that includes a process for forming a nitrate film (12x) that includes residual nickel (22) on a surface thereof, by bringing a nitric acid solution into contact with a polysilicon layer (11x); and a process for removing the nitrate film (12x) that includes residual nickel (22) from the polysilicon layer (11x) surface. With this surface treatment process, a polysilicon layer (11) with reduced concentration of a surface residual nickel (22) is provided, and a thin-film transistor (10) having excellent surface smoothness is attained.
摘要翻译：公开了一种薄膜晶体管（10）制造方法，其包括通过使硝酸溶液与多晶硅层（11x）接触来形成包含残留镍（22）在其表面上的硝酸盐膜（12x）的工艺）; 以及从多晶硅层（11x）表面除去包括残留镍（22）的硝酸盐膜（12x）的方法。通过该表面处理工艺，提供了表面残留镍（22）的浓度降低的多晶硅层（11），并且获得了具有优异表面平滑度的薄膜晶体管（10）。

7. 发明申请

US20120326255A1 METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR DEVICES, SEMICONDUCTOR DEVICE AND TRANSFER MEMBER 有权
标题翻译：用于制造半导体器件，半导体器件和传输器件的方法和器件
公开(公告)号：US20120326255A1
公开(公告)日：2012-12-27
申请号：US13578967
申请日：2011-02-14
申请人： Hikaru Kobayashi
发明人： Hikaru Kobayashi
IPC分类号： H01L31/0352 , B32B5/02 , H01L21/00
CPC分类号： H01L31/0747 , H01L31/02363 , H01L31/182 , Y02E10/546 , Y02P70/521 , Y10T29/41 , Y10T442/10
摘要： Disclosed is a method for manufacturing semiconductor devices. Said method includes: a supply step in which a process liquid (19) that oxidizes and dissolves a target substrate (20) to be treated is supplied to the surface of said substrate (20) to be treated; a positioning step in which a mesh-like transferring member (10b) provided with a catalyst material is positioned near or in contact with the surface of the substrate (20) to be treated; and a concave or convex forming step in which a concave or convex is formed on the surface of the substrate (20) to be treated via the aforementioned supply and positioning steps. As opposed to existing manufacturing methods, which manufacture semiconductor devices provided with semiconductor substrates with highly arbitrary (i.e. not very reproducible) concaves or convexes, by forming an appropriate concave or convex or mesh at the transferring member step, the disclosed method can stably manufacture semiconductor devices provided with semiconductor substrates that have concaves or convexes of a fixed level.
摘要翻译：公开了半导体器件的制造方法。所述方法包括：供给步骤，其中将待处理的目标基板（20）氧化和溶解的处理液体（19）供给到待处理的所述基板（20）的表面; 定位步骤，其中设置有催化剂材料的网状转印构件（10b）位于待处理的基板（20）的表面附近或与之接触; 以及通过上述供给和定位步骤在待处理的基板（20）的表面上形成凹或凸的凹凸形成步骤。与现有制造方法相反，所述制造方法通过在转印构件步骤形成适当的凹或凸或网状物来制造具有高度任意（即不是非常可再现的）凹凸的半导体衬底的半导体器件，所公开的方法可以稳定地制造半导体设置有具有固定水平的凹陷或凸起的半导体衬底的器件。

8. 发明申请

US20050215070A1 Method for forming silicon dioxide film on silicon substrate, method for forming oxide film on semiconductor substrate, and method for producing semiconductor device 有权
标题翻译：在硅衬底上形成二氧化硅膜的方法，半导体衬底上形成氧化膜的方法以及半导体器件的制造方法
公开(公告)号：US20050215070A1
公开(公告)日：2005-09-29
申请号：US10515501
申请日：2003-05-21
申请人： Hikaru Kobayashi
发明人： Hikaru Kobayashi
IPC分类号： H01L27/04 , H01L21/28 , H01L21/316 , H01L21/336 , H01L21/822 , H01L29/51 , H01L29/78 , H01L29/786 , H01L21/469
CPC分类号： H01L21/28194 , H01L21/02238 , H01L21/02255 , H01L21/02337 , H01L21/28202 , H01L21/31662 , H01L29/511 , H01L29/518
摘要： After cleaning a surface of a silicon substrate (1), impurities and natural oxide film existing on the silicon substrate (1) are removed by soaking the silicon substrate (1) in a 0.5%-by-volume HF aqueous solution for 5 minutes. The silicon substrate (1) is rinsed (cleaned) with ultrapure water for five minutes. Then, the silicon substrate (1) is soaked for 30 minutes in azeotropic nitric acid heated to an azeotropic temperature of 120.7° C. In this way, an extremely thin chemical oxide film (5) is formed on the surface of the silicon substrate (1). Subsequently, a metal film (6) (aluminum-silicon alloy film) is deposited, followed by heating in a hydrogen-containing gas at 200° C. for 20 minutes. Through the heat processing in the hydrogen-containing gas, hydrogen reacts with interface states and defect states in the chemical oxide film (5), causing disappearance of the interface states and defect states. As a result, the quality of the film can be improved. Thus, it is possible to form a high quality (with low leak current density), extremely thin silicon dioxide film on the silicon substrate at a low temperature with excellent film-thickness controllability.
摘要翻译：在清洗硅衬底（1）的表面之后，通过将硅衬底（1）浸泡在0.5％体积的HF水溶液中5分钟来除去存在于硅衬底（1）上的杂质和自然氧化物膜。将硅衬底（1）用超纯水冲洗（清洁）5分钟。然后，将硅基板（1）在加热至共沸温度为120.7℃的共沸硝酸中浸泡30分钟。以这种方式，在硅基板的表面上形成极薄的化学氧化物膜（5） 1）。随后，沉积金属膜（6）（铝 - 硅合金膜），然后在含氢气体中在200℃下加热20分钟。通过含氢气体中的热处理，氢与化学氧化膜（5）中的界面态和缺陷状态发生反应，导致界面状态和缺陷状态的消失。结果，可以提高胶片的质量。因此，可以在低温下在硅衬底上形成高质量（低漏电流密度），极薄的二氧化硅膜，具有优异的膜厚可控性。

9. 发明授权

US10072170B2 Ink set and ink-jet recording method 有权
公开(公告)号：US10072170B2
公开(公告)日：2018-09-11
申请号：US15070193
申请日：2016-03-15
申请人： Hikaru Kobayashi , Tomohiro Nakagawa , Noriaki Okada
发明人： Hikaru Kobayashi , Tomohiro Nakagawa , Noriaki Okada
IPC分类号： C09D11/40 , C09D11/033 , C09D11/322 , C09D11/38 , C09D11/102
CPC分类号： C09D11/40 , C09D11/033 , C09D11/102 , C09D11/322 , C09D11/38
摘要： An ink set that includes a first ink and a second ink each containing coloring agent, surfactant, organic solvent, resin, and water. The mix SP value of the organic solvent and the water of the first ink is larger than the mix SP value of the organic solvent and the water of the second ink. An ink-jet recording method using the ink set.

10. 发明申请

US20180170061A1 CLEANING LIQUID, CONTAINER, INKJET PRINTING METHOD, INKJET PRINTING DEVICE, AND SET OF INK AND CLEANING LIQUID 审中-公开
公开(公告)号：US20180170061A1
公开(公告)日：2018-06-21
申请号：US15842003
申请日：2017-12-14
申请人： Yuta NAKAMURA , Michihiko Namba , Masahiro Kido , Hiroaki Takahashi , Hikaru Kobayashi , Naoto Shimura , Akiko Bannai , Shizuka Kohzuki
发明人： Yuta NAKAMURA , Michihiko Namba , Masahiro Kido , Hiroaki Takahashi , Hikaru Kobayashi , Naoto Shimura , Akiko Bannai , Shizuka Kohzuki
IPC分类号： B41J2/165 , C11D7/50 , C09D11/322
CPC分类号： B41J2/16552 , C09D11/102 , C09D11/322 , C09D11/38 , C09D11/40 , C09D11/54 , C11D7/5022
摘要： A cleaning liquid for rinsing an ink adhering to an article includes water and a first organic solvent, wherein a liquid mixture of the water and the first organic solvent has a Hansen solubility parameter including a hydrogen bond term of 10.0 (cal/cm3)1/2 or less, wherein the ink includes water, a second organic solvent, a polyurethane resin particle, and a polysiloxane surfactant having an HLB value of 8 or less, wherein the polyurethane resin particle accounts for 5 percent by mass or more of a total amount of the ink.

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