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1. 发明申请

US20060202741A1 Fast start charge pump for voltage regulators 有权
标题翻译：用于稳压器的快速启动电荷泵
公开(公告)号：US20060202741A1
公开(公告)日：2006-09-14
申请号：US11080067
申请日：2005-03-14
申请人： Hieu Tran , Sang Nguyen , Anh Ly , Hung Nguyen , Wingfu Lau , Nasrin Jaffari , Thuan Vu , Vishal Sarin , Loc Hoang
发明人： Hieu Tran , Sang Nguyen , Anh Ly , Hung Nguyen , Wingfu Lau , Nasrin Jaffari , Thuan Vu , Vishal Sarin , Loc Hoang
IPC分类号： G05F1/10
CPC分类号： H02M3/07 , H02M1/36 , H02M1/44
摘要： A digital multilevel memory system includes a charge pump and a voltage regulator for generating regulated high voltages for various memory operations. The charge pump may include a plurality of boost circuits to boost the output of the charge pump during a fast start up. Afterwards, the boost circuits are disabled to allow the charge pump to generate high voltages without boosting. The boost circuits may be successively enabled to boost the voltage. The boost circuits may be loadless. The voltage regulator may operate in an open loop and may include a resistive divider as a reference voltage for regulating the high voltage from the charge pump. The charge pump may include spread spectrum pump clocking to reduce electromagnetic inference for capacitor or inductor on-chip charge pumping.
摘要翻译：数字多电平存储器系统包括电荷泵和用于产生用于各种存储器操作的调节高电压的电压调节器。电荷泵可以包括多个升压电路，以在快速启动期间升高电荷泵的输出。之后，升压电路被禁止，使电荷泵产生高电压而不加速。升压电路可以被连续地使能以升高电压。升压电路可以是无负载的。电压调节器可以在开环中工作，并且可以包括电阻分压器作为用于调节来自电荷泵的高电压的参考电压。电荷泵可以包括扩频泵时钟，以减少用于电容器或电感器片上电荷泵浦的电磁推理。

2. 发明申请

US20070147131A1 Flash memory array system including a top gate memory cell 有权
公开(公告)号：US20070147131A1
公开(公告)日：2007-06-28
申请号：US11707341
申请日：2007-02-16
申请人： Hieu Tran , Hung Nguyen , Anh Ly , Sheng-Hsiung Hsueh , Sang Nguyen , Loc Hoang , Steve Choi , Thuan Vu
发明人： Hieu Tran , Hung Nguyen , Anh Ly , Sheng-Hsiung Hsueh , Sang Nguyen , Loc Hoang , Steve Choi , Thuan Vu
IPC分类号： G11C11/34
CPC分类号： G11C8/10 , G11C16/0433 , G11C16/08 , G11C29/832
摘要： A memory system includes memory cells arranged in sectors. A decoder corresponding to a sector disables memory cells having a defective top gate. The decoder may include a low voltage or high voltage latch for the disabling. A top gate handling algorithm is included. The memory system may include dynamic top gate coupling. A programming algorithm and waveforms with top gate handling is included.

3. 发明申请

US20070147111A1 Flash memory array system including a top gate memory cell 有权
标题翻译：包括顶栅存储单元的闪存阵列系统
公开(公告)号：US20070147111A1
公开(公告)日：2007-06-28
申请号：US11707343
申请日：2007-02-16
申请人： Hieu Tran , Hung Nguyen , Anh Ly , Sheng-Hsiung Hsueh , Sang Nguyen , Loc Hoang , Steve Choi , Thuan Vu
发明人： Hieu Tran , Hung Nguyen , Anh Ly , Sheng-Hsiung Hsueh , Sang Nguyen , Loc Hoang , Steve Choi , Thuan Vu
IPC分类号： G11C16/04
CPC分类号： G11C8/10 , G11C16/0433 , G11C16/08 , G11C29/832
摘要： A memory system includes memory cells arranged in sectors. A decoder corresponding to a sector disables memory cells having a defective top gate. The decoder may include a low voltage or high voltage latch for the disabling. A top gate handling algorithm is included. The memory system may include dynamic top gate coupling. A programming algorithm and waveforms with top gate handling is included.
摘要翻译：存储器系统包括布置在扇区中的存储器单元。对应于扇区的解码器禁止具有缺陷顶门的存储单元。解码器可以包括用于禁用的低电压或高电压锁存器。包括顶栅处理算法。存储器系统可以包括动态顶栅耦合。包括具有顶栅处理的编程算法和波形。

4. 发明申请

US20070250744A1 Method and apparatus for testing the connectivity of a flash memory chip 有权
标题翻译：用于测试闪存芯片连接性的方法和装置
公开(公告)号：US20070250744A1
公开(公告)日：2007-10-25
申请号：US11407602
申请日：2006-04-19
申请人： Sang Nguyen , Hieu Tran , Hung Nguyen , Phil Klotzkin
发明人： Sang Nguyen , Hieu Tran , Hung Nguyen , Phil Klotzkin
IPC分类号： G11C29/00
CPC分类号： G11C29/02 , G11C29/022 , G11C2029/3202
摘要： In one embodiment of the invention, circuitry and hardware for connectivity testing are fabricated on an IC, and in particular an IC containing a flash memory array. This testing circuitry is electrically connected to the bond pads of the IC. In some embodiments, the testing circuitry includes a boundary scan cell connected to each bond pad, allowing for rapid connectivity testing of flash memory chips in accordance with testing standards such as the JTAG standard. The invention further includes methods in which the pins and/or memory cells of a flash memory chip are sequentially sent a series of data so as to test the connectivity of portions of the IC. The sequentially-sent data is then retrieved and compared to the original data. Discrepancies between these sets of data thus highlight connectivity problems in the IC.
摘要翻译：在本发明的一个实施例中，用于连接测试的电路和硬件被制造在IC上，特别是包含闪存阵列的IC。该测试电路电连接到IC的接合焊盘。在一些实施例中，测试电路包括连接到每个接合焊盘的边界扫描单元，允许根据诸如JTAG标准的测试标准对闪存芯片进行快速连接测试。本发明还包括其中闪存芯片的引脚和/或存储单元被顺序发送一系列数据以测试IC的部分连通性的方法。然后检索顺序发送的数据并将其与原始数据进行比较。因此，这些数据集之间的差异突出了IC中的连接问题。

5. 发明申请

US20060202668A1 Fast voltage regulators for charge pumps 有权
公开(公告)号：US20060202668A1
公开(公告)日：2006-09-14
申请号：US11080070
申请日：2005-03-14
申请人： Hieu Tran , Sang Nguyen , Anh Ly , Hung Nguyen , Wingfu Lau , Nasrin Jaffari , Thuan Vu , Vishal Sarin , Loc Hoang
发明人： Hieu Tran , Sang Nguyen , Anh Ly , Hung Nguyen , Wingfu Lau , Nasrin Jaffari , Thuan Vu , Vishal Sarin , Loc Hoang
IPC分类号： G05F5/00 , G05F1/00
CPC分类号： H02M3/07 , G11C5/145 , H02M1/36 , H02M1/44 , Y10T307/50
摘要： A digital multilevel memory system includes a charge pump and a voltage regulator for generating regulated high voltages for various memory operations. The charge pump may include a plurality of boost circuits to boost the output of the charge pump during a fast start up. Afterwards, the boost circuits are disabled to allow the charge pump to generate high voltages without boosting. The boost circuits may be successively enabled to boost the voltage. The boost circuits may be loadless. The voltage regulator may operate in an open loop and may include a resistive divider as a reference voltage for regulating the high voltage from the charge pump. The charge pump may include spread spectrum pump clocking to reduce electromagnetic inference for capacitor or inductor on-chip charge pumping.

6. 发明申请

US20050249006A1 Low voltage high speed sensing 有权
标题翻译：低电压高速感应
公开(公告)号：US20050249006A1
公开(公告)日：2005-11-10
申请号：US10838999
申请日：2004-05-04
申请人： Hieu Tran , Sang Nguyen , Hung Nguyen
发明人： Hieu Tran , Sang Nguyen , Hung Nguyen
IPC分类号： G11C7/00 , G11C7/06 , G11C11/56
CPC分类号： G11C11/5642 , G11C7/06 , G11C7/062
摘要： A memory system includes a sense amplifier for detecting content of data memory cells by comparison with a voltage stored in a reference cell. The sense amplifier may comprise a comparator, first and second load circuits, and a low impedance circuit. A first input of the comparator is coupled to the low impedance circuit and a reference voltage node. A second input of the comparator is coupled to a data voltage node. The first load circuit loads a reference cell coupled to the reference voltage node. The second load circuit loads a data cell coupled to the data voltage node.
摘要翻译：存储器系统包括用于通过与存储在参考单元中的电压进行比较来检测数据存储单元的内容的读出放大器。读出放大器可以包括比较器，第一和第二负载电路以及低阻抗电路。比较器的第一输入耦合到低阻抗电路和参考电压节点。比较器的第二输入耦合到数据电压节点。第一负载电路加载耦合到参考电压节点的参考电池。第二负载电路加载耦合到数据电压节点的数据单元。

7. 发明申请

US20060123280A1 Test circuit and method for multilevel cell flash memory 有权
公开(公告)号：US20060123280A1
公开(公告)日：2006-06-08
申请号：US10991702
申请日：2004-11-17
申请人： Hieu Tran , Anh Ly , Sang Nguyen , Vishal Sarin , Hung Nguyen , William Saiki , Loc Hoang
发明人： Hieu Tran , Anh Ly , Sang Nguyen , Vishal Sarin , Hung Nguyen , William Saiki , Loc Hoang
IPC分类号： G11C29/00
CPC分类号： G11C11/5621 , G11C16/04 , G11C29/50 , G11C29/50004
摘要： A test device and method may be used to detect voltage, current or signals of a digital multilevel memory cell system or to test operation or performance by applying inputted voltages, currents or signals to the memory cell system.

8. 发明申请

US20070070703A1 Flash memory array system including a top gate memory cell 有权
公开(公告)号：US20070070703A1
公开(公告)日：2007-03-29
申请号：US11235901
申请日：2005-09-26
申请人： Hieu Tran , Hung Nguyen , Anh Ly , Sheng-Hsiung Hsueh , Sang Nguyen , Loc Hoang , Steve Choi , Thuan Vu
发明人： Hieu Tran , Hung Nguyen , Anh Ly , Sheng-Hsiung Hsueh , Sang Nguyen , Loc Hoang , Steve Choi , Thuan Vu
IPC分类号： G11C11/34
CPC分类号： G11C8/10 , G11C16/0433 , G11C16/08 , G11C29/832
摘要： A memory system includes memory cells arranged in sectors. A decoder corresponding to a sector disables memory cells having a defective top gate. The decoder may include a low voltage or high voltage latch for the disabling. A top gate handling algorithm is included. The memory system may include dynamic top gate coupling. A programming algorithm and waveforms with top gate handling is included.

9. 发明申请

US20070120599A1 Multi-operational amplifier system 有权
标题翻译：多运算放大器系统
公开(公告)号：US20070120599A1
公开(公告)日：2007-05-31
申请号：US11652719
申请日：2007-01-11
申请人： Hieu Tran , Anh Ly , Sang Nguyen , Vishal Sarin
发明人： Hieu Tran , Anh Ly , Sang Nguyen , Vishal Sarin
IPC分类号： H03F3/00
CPC分类号： H03F3/45192 , H03F3/211 , H03F3/45183 , H03F3/45475 , H03F3/72 , H03F2203/21109 , H03F2203/21145 , H03F2203/45138 , H03F2203/45288 , H03F2203/45541 , H03F2203/45618 , H03F2203/45626 , H03F2203/45722 , H03F2203/45728 , H03F2203/7206 , H03F2203/7215
摘要： A multi-operational amplifier system comprises a plurality of operational amplifiers and a controller to configure the plurality of operational amplifiers. The operational amplifiers may be selectively configured to operate individually or in combination with other of the operational amplifiers. The operational amplifiers may have different common node inputs. In one aspect, the different inputs may be selected from groups of PMOS, N-type NMOS and NZ NMOS inputs. The operational amplifiers may include the different inputs that are arranged as differential pairs.
摘要翻译：多运算放大器系统包括多个运算放大器和用于配置多个运算放大器的控制器。运算放大器可以被选择性地配置成单独操作或与其他运算放大器组合运行。运算放大器可能具有不同的公共节点输入。在一个方面，可以从PMOS，N型NMOS和NZ NMOS输入的组中选择不同的输入。运算放大器可以包括被布置为差分对的不同输入。

10. 发明申请

US20050140428A1 LOW VOLTAGE CMOS BANDGAP REFERENCE 有权
标题翻译：低电压CMOS贴装参考
公开(公告)号：US20050140428A1
公开(公告)日：2005-06-30
申请号：US10748540
申请日：2003-12-29
申请人： Hieu Tran , Tam Tran , Vishal Sarin , Anh Ly , Nianglamching Hangzo , Sang Nguyen
发明人： Hieu Tran , Tam Tran , Vishal Sarin , Anh Ly , Nianglamching Hangzo , Sang Nguyen
IPC分类号： G05F3/26 , G05F1/10 , G05F3/20 , G05F3/30 , G11C16/30 , H03F3/34
CPC分类号： G05F3/30
摘要： A bandgap reference generator comprises a PMOS transistor and NMOS transistor in a pnp bipolar junction transistor connected in series in a first leg. The bandgap reference generator includes a second leg that includes a PMOS transistor, an NMOS transistor, a resistor and a pnp bipolar junction transistor. A bias circuit provides a bias to a mirror formed by the gates of the PMOS transistors to lower the operating voltage of the bandgap reference generator. A second biasing circuit may provide bias to the mirror formed of the NMOS transistors. A time-based and a DC bias-based start up circuitry and method is provided.
摘要翻译：带隙参考发生器包括在第一支路中串联连接的pnp双极结型晶体管中的PMOS晶体管和NMOS晶体管。带隙参考发生器包括第二支路，其包括PMOS晶体管，NMOS晶体管，电阻器和pnp双极结型晶体管。偏置电路为由PMOS晶体管的栅极形成的反射镜提供偏置，以降低带隙基准发生器的工作电压。第二偏置电路可以向由NMOS晶体管形成的反射镜提供偏置。提供基于时间的和基于DC偏压的启动电路和方法。

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