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    • 3. 发明授权
    • Testing circuit and testing method for semiconductor device and semiconductor chip
    • 半导体器件和半导体芯片的测试电路和测试方法
    • US07603248B2
    • 2009-10-13
    • US11474393
    • 2006-06-26
    • Hidetoshi SugiyamaMasao NakajimaHaruyuki MouriHideaki Suzuki
    • Hidetoshi SugiyamaMasao NakajimaHaruyuki MouriHideaki Suzuki
    • G06F19/00
    • G01R31/31719G01R31/31701G01R31/31721
    • A testing circuit for a semiconductor device having a test mode in which the information about built-in memory cannot be read after conducting a test on a semiconductor device, and cutting a pad formed in a scribe area is provided. The scribe PAD and the scribe ROM are formed in the cutting area of a wafer. Upon power-up of a chip a, the power-on reset circuit transmits a reset signal to the mode register. After setting the initial resister value to “00”, a mode switch signal is input from the mode switch terminal, the scribe ROM is activated, and the test mode is set. In this process, a Manchester coded signal is provided from the scribe PAD, decoded by a clock of dividing frequency provided from the clock dividing circuit, the value of the register in the test mode in the mode register is set, and external reset is asserted or negated.
    • 一种半导体器件的测试电路,具有测试模式,其中在对半导体器件进行测试之后无法读取关于内置存储器的信息,并且切割形成在划线区域中的焊盘。 划片PAD和划线ROM形成在晶片的切割区域中。 在芯片a上电时,上电复位电路将复位信号发送到模式寄存器。 将初始电阻值设置为“00”后,从模式开关端子输入模式切换信号,激活划线ROM,并设置测试模式。 在这个过程中,曼彻斯特编码信号由划片PAD提供,由时钟分频电路提供的分频时钟解码,设置模式寄存器中的测试模式中的寄存器的值,并且断言外部复位 或否定。
    • 4. 发明授权
    • Semiconductor device having a diode for a rectifier circuit
    • 具有用于整流电路的二极管的半导体器件
    • US07750437B2
    • 2010-07-06
    • US11229161
    • 2005-09-19
    • Hideaki SuzukiHidetoshi Sugiyama
    • Hideaki SuzukiHidetoshi Sugiyama
    • H01L29/93
    • H01L27/0814H01L21/761H01L27/0823
    • A semiconductor device has a rectifier circuit and integrated circuit on a semiconductor substrate of a first conduction type, and has a first well region in the substrate, a second well region in first well region, and a diode region formed in second well region and constituting a diode with second well region. The rectifier circuit is formed by the diodes. An input power supply terminal, changing between positive and negative potentials, is connected to second and first well regions of a first diode and to diode region of a second diode. A current supply terminal is provided in the vicinity of first well region of first diode, and is connected to the substrate and a prescribed power supply, so as to supply a current to the PN junction between the first well region and the semiconductor substrate when the input power supply terminal is at negative potential.
    • 半导体器件在第一导电类型的半导体衬底上具有整流电路和集成电路,并且在衬底中具有第一阱区域,第一阱区域中的第二阱区域和形成在第二阱区域中的二极管区域,并且构成 具有第二阱区的二极管。 整流电路由二极管形成。 在正和负电位之间变化的输入电源端子连接到第一二极管的第二和第一阱区域以及第二二极管的二极管区域。 电流源端子设置在第一二极管的第一阱区附近,并且连接到衬底和规定的电源,以便当第一阱区和半导体衬底之间的PN结提供电流时 输入电源端子处于负电位。
    • 5. 发明申请
    • Testing circuit and testing method for semiconductor device and semiconductor chip
    • 半导体器件和半导体芯片的测试电路和测试方法
    • US20070203662A1
    • 2007-08-30
    • US11474393
    • 2006-06-26
    • Hidetoshi SugiyamaMasao NakajimaHaruyuki MouriHideaki Suzuki
    • Hidetoshi SugiyamaMasao NakajimaHaruyuki MouriHideaki Suzuki
    • G06F19/00
    • G01R31/31719G01R31/31701G01R31/31721
    • A testing circuit for a semiconductor device having a test mode in which the information about built-in memory cannot be read after conducting a test on a semiconductor device, and cutting a pad formed in a scribe area is provided. The scribe PAD and the scribe ROM are formed in the cutting area of a wafer. Upon power-up of a chip a, the power-on reset circuit transmits a reset signal to the mode register. After setting the initial resister value to “00”, a mode switch signal is input from the mode switch terminal, the scribe ROM is activated, and the test mode is set. In this process, a Manchester coded signal is provided from the scribe PAD, decoded by a clock of dividing frequency provided from the clock dividing circuit, the value of the register in the test mode in the mode register is set, and external reset is asserted or negated.
    • 一种半导体器件的测试电路,具有测试模式,其中在对半导体器件进行测试之后无法读取关于内置存储器的信息,并且切割形成在划线区域中的焊盘。 划片PAD和划线ROM形成在晶片的切割区域中。 在芯片a上电时,上电复位电路将复位信号发送到模式寄存器。 将初始电阻值设置为“00”后,从模式开关端子输入模式切换信号,激活划线ROM,并设置测试模式。 在这个过程中,曼彻斯特编码信号由划片PAD提供,由时钟分频电路提供的分频时钟解码,设置模式寄存器中的测试模式中的寄存器的值,并且断言外部复位 或否定。
    • 6. 发明申请
    • Semiconductor device having a diode for a rectifier circuit
    • 具有用于整流电路的二极管的半导体器件
    • US20060273403A1
    • 2006-12-07
    • US11229161
    • 2005-09-19
    • Hideaki SuzukiHidetoshi Sugiyama
    • Hideaki SuzukiHidetoshi Sugiyama
    • H01L29/76
    • H01L27/0814H01L21/761H01L27/0823
    • A semiconductor device has a rectifier circuit and integrated circuit on a semiconductor substrate of a first conduction type, and has a first well region in the substrate, a second well region in first well region, and a diode region formed in second well region and constituting a diode with second well region. The rectifier circuit is formed by the diodes. An input power supply terminal, changing between positive and negative potentials, is connected to second and first well regions of a first diode and to diode region of a second diode. A current supply terminal is provided in the vicinity of first well region of first diode, and is connected to the substrate and a prescribed power supply, so as to supply a current to the PN junction between the first well region and the semiconductor substrate when the input power supply terminal is at negative potential.
    • 半导体器件在第一导电类型的半导体衬底上具有整流电路和集成电路,并且在衬底中具有第一阱区域,第一阱区域中的第二阱区域和形成在第二阱区域中的二极管区域,并且构成 具有第二阱区的二极管。 整流电路由二极管形成。 在正和负电位之间变化的输入电源端子连接到第一二极管的第二和第一阱区域以及第二二极管的二极管区域。 电流源端子设置在第一二极管的第一阱区附近,并且连接到衬底和规定的电源,以便当第一阱区和半导体衬底之间的PN结提供电流时 输入电源端子处于负电位。